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11. 发明授权

US3988987A Combination stamp 失效
标题翻译：组合邮票
公开(公告)号：US3988987A
公开(公告)日：1976-11-02
申请号：US517385
申请日：1974-10-23
申请人： Kenichiro Ikura , Nobukazu Sakamoto , Tetsuo Koyama , Masaru Miyazaki
发明人： Kenichiro Ikura , Nobukazu Sakamoto , Tetsuo Koyama , Masaru Miyazaki
IPC分类号： B41K1/04 , B41K1/52 , B41F31/02
CPC分类号： B41K1/52 , B41K1/04
摘要： Combination stamp comrpises a plurality of independent stamp elements joined together for use in combination. The stamp element includes a stamp frame having a stamp plate at its lower end and a top wall and four side walls. A dovetail-like vertical projection is formed on one of the opposing side walls and a dovetail-like vertical groove in the other side wall. Engagement of the projection in the groove joins adjacent stamp elements together against horizontal displacement. Each of the other opposing side walls has a horizontal groove in its upper portion. The joined stamp elements are so adjusted that the horizontal grooves therein are in alignment with each other, and a cover having inward projections along the opposite side edges thereof is fitted over the stamp elements, with the inward projections engaged in the aligned horizontal grooves, whereby the stamp elements are prevented from vertical displacement.
摘要翻译：组合邮票组合连接在一起的多个独立邮票元素组合使用。印模元件包括在其下端具有印版的印模框架，以及顶壁和四个侧壁。燕尾形状的垂直突起形成在另一侧壁中的一个相对的侧壁和燕尾状的垂直槽中。凹槽中的突出物的接合将相邻的印模元件结合在一起反对水平位移。其他相对的侧壁中的每一个在其上部具有水平凹槽。连接的印模元件被调节成使得其中的水平凹槽彼此对准，并且具有沿其相对侧边缘的向内突起的盖子装配在印模元件上，其中向内的凸起与对准的水平凹槽接合，由此防止印章元件垂直移动。

12. 发明授权

US07466065B2 Bimorph switch, bimorph switch manufacturing method, electronic circuitry and electronic circuitry manufacturing method 有权
标题翻译：双压电开关，双压电晶片开关制造方法，电子电路和电子电路制造方法
公开(公告)号：US07466065B2
公开(公告)日：2008-12-16
申请号：US11504381
申请日：2006-08-15
申请人： Hirokazu Sanpei , Jun Mizuno , Masazumi Yasuoka , Humikazu Takayanagi , Takehisa Takoshima , Masaru Miyazaki , Masayoshi Esashi
发明人： Hirokazu Sanpei , Jun Mizuno , Masazumi Yasuoka , Humikazu Takayanagi , Takehisa Takoshima , Masaru Miyazaki , Masayoshi Esashi
IPC分类号： H01L29/00 , H01L41/08 , H03H11/24
CPC分类号： H01H61/00 , H01H1/0036 , H01H2061/006
摘要： A bimorph switch electrically connecting a traveling contact and a fixed contact. The switch comprises a substrate having a front face, a rear face, and a through hole penetrating from the front face to the rear face; a fixed contact extending from an edge portion of the aperture of the through hole towards the inside of the aperture; and a bimorph section holding the traveling contact at a position facing the aperture and driving the traveling contact. One end of the bimorph section may be formed on a silicon oxide layer formed on a front face of the substrate.
摘要翻译：电动连接行走触点和固定触点的双压电晶片开关。开关包括具有前表面，后表面和从前表面到后表面穿透的通孔的基板; 从所述通孔的孔的边缘部分朝向所述孔的内部延伸的固定接触; 以及将移动接触件保持在面对孔径的位置并驱动行驶接触件的双压电晶片部分。双晶片部分的一端可以形成在形成在基板的正面上的氧化硅层上。

13. 发明申请

US20080242104A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF AND MASK FOR DIVIDING EXPOSURE 审中-公开
标题翻译：半导体器件，其制造方法和掩模用于分开曝光
公开(公告)号：US20080242104A1
公开(公告)日：2008-10-02
申请号：US12055542
申请日：2008-03-26
申请人： Kazuhito HONMA , Masaru MIYAZAKI , Masanori ONODERA
发明人： Kazuhito HONMA , Masaru MIYAZAKI , Masanori ONODERA
IPC分类号： H01L21/302 , G03F1/00
CPC分类号： H01L21/32139 , G03F1/00 , G03F1/44
摘要： A method of manufacturing a semiconductor device has a first exposure to the photoresist by using a first mask having a first portion of a monitor pattern, a second exposure to the photoresist by using a second mask having a second portion of the monitor pattern so that a first image of the first portion and a second image of the second portion are connected.
摘要翻译：制造半导体器件的方法通过使用具有监测器图案的第一部分的第一掩模，通过使用具有监视器图案的第二部分的第二掩模对光致抗蚀剂进行第二次曝光来对光致抗蚀剂进行第一次曝光，使得连接第一部分的第一图像和第二部分的第二图像。

14. 发明授权

US07170216B2 Bimorph switch, bimorph switch manufacturing method, electronic circuitry and electronic circuitry manufacturing method 有权
标题翻译：双压电开关，双压电晶片开关制造方法，电子电路和电子电路制造方法
公开(公告)号：US07170216B2
公开(公告)日：2007-01-30
申请号：US11040502
申请日：2005-01-21
申请人： Hirokazu Sanpei , Jun Mizuno , Masazumi Yasuoka , Humikazu Takayanagi , Takehisa Takoshima , Masaru Miyazaki , Masayoshi Esashi
发明人： Hirokazu Sanpei , Jun Mizuno , Masazumi Yasuoka , Humikazu Takayanagi , Takehisa Takoshima , Masaru Miyazaki , Masayoshi Esashi
IPC分类号： H01L23/00 , H01H59/00
CPC分类号： H01H61/00 , H01H1/0036 , H01H2061/006
摘要： A bimorph switch electrically connecting a traveling contact and a fixed contact. The switch comprises a substrate having a front face, a rear face, and a through hole penetrating from the front face to the rear face; a fixed contact extending from an edge portion of the aperture of the through hole towards the inside of the aperture; and a bimorph section holding the traveling contact at a position facing the aperture and driving the traveling contact. One end of the bimorph section may be formed on a silicon oxide layer formed on a front face of the substrate.
摘要翻译：电动连接行走触点和固定触点的双压电晶片开关。开关包括具有前表面，后表面和从前表面到后表面穿透的通孔的基板; 从所述通孔的孔的边缘部分朝向所述孔的内部延伸的固定接触; 以及将移动接触件保持在面对孔径的位置并驱动行驶接触件的双压电晶片部分。双晶片部分的一端可以形成在形成在基板的正面上的氧化硅层上。

15. 发明授权

US06813133B2 Switch, integrated circuit device, and method of manufacturing switch 有权
公开(公告)号：US06813133B2
公开(公告)日：2004-11-02
申请号：US10630105
申请日：2003-07-30
申请人： Masazumi Yasuoka , Masaru Miyazaki
发明人： Masazumi Yasuoka , Masaru Miyazaki
IPC分类号： H01B710
CPC分类号： H01H59/0009 , H01H1/20 , H01H50/005 , H01H2001/0084 , H01H2057/006
摘要： There is provided a switch 10 for connecting a first terminal with a second terminal electrically. The switch 10 includes: the first terminal 46; the second terminal 26 and a third terminal 28 confronting said first terminal 46; driving means 70 for driving the first terminal 46 in the direction of the second terminal 26 and the third terminal 28; and an electrostatic coupling section 72 including a first electrode 50 and a second electrode 30 confronting each other for attracting the first terminal 46 in the direction of the second terminal 26 and the third terminal 28 by electrostatic force.

16. 发明授权

US4953934A Waveguide type light merging and branching device 失效
标题翻译：波导型光合并分支装置
公开(公告)号：US4953934A
公开(公告)日：1990-09-04
申请号：US280855
申请日：1988-12-07
申请人： Katsuyuki Imoto , Hirohisa Sano , Masaru Miyazaki , Naoyuki Matsuoka , Hisato Uetsuka
发明人： Katsuyuki Imoto , Hirohisa Sano , Masaru Miyazaki , Naoyuki Matsuoka , Hisato Uetsuka
IPC分类号： G02B6/12 , G02B6/34 , G02F1/01 , G02F1/313
CPC分类号： G02F1/3132 , G02F1/0147
摘要： A waveguide type light merging and branching device, in which a resistance layer is disposed on a surface of a substrate or at least on one side therein and a low refractive index layer (refractive index n.sub.b), a core waveguide layer (refractive index n.sub.c, n.sub.c >n.sub.b), and a cladding layer (refractive index n.sub.n, n.sub.n >n.sub.c) superposed thereon on each other, the resistance layer having electrode terminals at the two extremities thereof, to which a voltage is applied.
摘要翻译：一种波导型光合并分支装置，其中电阻层设置在基板的表面或其至少一侧，低折射率层（折射率nb），芯波导层（折射率nc， nc> nb）和叠置在其上的包层（折射率nn，nn> nc），所述电阻层在其两端具有施加电压的两端的电极端子。

17. 发明授权

US4902635A Method for production of compound semicondutor devices 失效
标题翻译：复合半导体器件的生产方法
公开(公告)号：US4902635A
公开(公告)日：1990-02-20
申请号：US175704
申请日：1988-03-31
申请人： Yoshinori Imamura , Masaru Miyazaki , Akihisa Terano , Nobutoshi Matsunaga , Hiroshi Yanazawa
发明人： Yoshinori Imamura , Masaru Miyazaki , Akihisa Terano , Nobutoshi Matsunaga , Hiroshi Yanazawa
IPC分类号： H01L21/338 , H01L21/768 , H01L21/8252 , H01L23/532 , H01L29/417 , H01L29/423 , H01L29/812
CPC分类号： H01L23/5329 , H01L21/7688 , H01L21/8252 , H01L29/41775 , H01L29/42316 , H01L2924/0002
摘要： This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices.This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching.Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.
摘要翻译：本发明涉及适用于提高半导体集成电路，尤其是GaAs半导体IC器件的集成密度的半导体器件的制造方法。本发明不使用在传统技术中所需的GaAs半导体衬底上形成的肖特基结和欧姆电极之间的第三布线金属，接触孔或通孔，而是提供了通过以下方式直接连接在上述两个电极之间的方法：气相沉积，离子注入，溅射，CVD，等离子体CVD，干蚀刻和湿蚀刻。由于本发明的应用使得上述两个电极能够以高产率直接连接，所以连接部分的元件面积可以比常规方法所需的量减少到小于一半，总元件面积可以大大减少

18. 发明授权

US4561169A Method of manufacturing semiconductor device utilizing multilayer mask 失效
标题翻译：利用多层掩模制造半导体器件的方法
公开(公告)号：US4561169A
公开(公告)日：1985-12-31
申请号：US517409
申请日：1983-07-26
申请人： Masaru Miyazaki , Susumu Takahashi , Takahiro Kohashi , Kiichi Ueyanagi
发明人： Masaru Miyazaki , Susumu Takahashi , Takahiro Kohashi , Kiichi Ueyanagi
IPC分类号： H01L21/027 , H01L21/338 , H01L21/441
CPC分类号： H01L29/66871 , H01L21/0272
摘要： In manufacturing a field effect transistor, a pattern which has a wider upper layer and a narrower lower layer is formed at a gate electrode position. Using the pattern as a mask, first and second impurity regions are formed on both the sides of a gate region by ion implantation. Subsequently, at least the lower layer is buried in a material, such as an organic high polymer material, having a selectivity in etching characteristics with respect to the pattern material. After removing the lower layer, an electrode material is embedded in the resulting hole so as to form a gate electrode.
摘要翻译：在制造场效应晶体管时，在栅电极位置形成具有更宽的上层和更窄的下层的图案。使用图案作为掩模，通过离子注入在栅极区域的两侧形成第一和第二杂质区。随后，至少下层被埋在诸如有机高分子材料的材料中，其具有相对于图案材料的蚀刻特性的选择性。在去除下层之后，将电极材料嵌入所形成的孔中以形成栅电极。

19. 发明授权

US08514590B2 Power conversion apparatus 有权
标题翻译：电力转换装置
公开(公告)号：US08514590B2
公开(公告)日：2013-08-20
申请号：US13021931
申请日：2011-02-07
申请人： Akira Nakasaka , Masaru Miyazaki , Kenichi Oohama
发明人： Akira Nakasaka , Masaru Miyazaki , Kenichi Oohama
IPC分类号： H02B1/01
CPC分类号： H05K7/20854 , H01L23/473 , H01L25/112 , H01L25/162 , H01L2924/0002 , H01L2924/00
摘要： The power conversion apparatus includes electronic components constituting a power conversion circuit, a cooler for cooling at least some of the electronic components, and a case housing the electronic components and the cooler. The at least some of the electronic components and the cooler are fixed to and integrated in a frame as an internal unit . The internal unit including therein the semiconductor modules also includes a control circuit board fitted to board fixing sections formed in the frame so as to project from the frame in the height direction perpendicular to the plane of the frame. Each of the board fixing sections has a board abutment surface at a position closer to the frame than the tips of control terminals of the semiconductor modules formed so as to project in the height direction.
摘要翻译：电力转换装置包括构成电力转换电路的电子部件，用于冷却至少一部分电子部件的冷却器，以及容纳电子部件和冷却器的壳体。电子部件和冷却器中的至少一些固定在框架内并作为内部单元集成。其中包括半导体模块的内部单元还包括控制电路板，该控制电路板安装成在框架中形成的固定部分，以便在与框架的平面垂直的高度方向上从框架突出。每个板固定部分在比半导体模块的控制端子的尖端更靠近框架的位置处具有板抵接表面，所述端部形成为在高度方向上突出。

20. 发明申请

US20060273692A1 Bimorph switch, bimorph switch manufacturing method, electronic circuitry and electronic circuitry manufacturing method 有权
标题翻译：双压电开关，双压电晶片开关制造方法，电子电路和电子电路制造方法
公开(公告)号：US20060273692A1
公开(公告)日：2006-12-07
申请号：US11504381
申请日：2006-08-15
申请人： Hirokazu Sanpei , Jun Mizuno , Masazumi Yasuoka , Humikazu Takayanagi , Takehisa Tokoshima , Masaru Miyazaki , Masayoshi Esashi
发明人： Hirokazu Sanpei , Jun Mizuno , Masazumi Yasuoka , Humikazu Takayanagi , Takehisa Tokoshima , Masaru Miyazaki , Masayoshi Esashi
IPC分类号： H01L41/08
CPC分类号： H01H61/00 , H01H1/0036 , H01H2061/006
摘要： A bimorph switch electrically connecting a traveling contact and a fixed contact. The switch comprises a substrate having a front face, a rear face, and a through hole penetrating from the front face to the rear face; a fixed contact extending from an edge portion of the aperture of the through hole towards the inside of the aperture; and a bimorph section holding the traveling contact at a position facing the aperture and driving the traveling contact. One end of the bimorph section may be formed on a silicon oxide layer formed on a front face of the substrate.
摘要翻译：电动连接行走触点和固定触点的双压电晶片开关。开关包括具有前表面，后表面和从前表面到后表面穿透的通孔的基板; 从所述通孔的孔的边缘部分朝向所述孔的内部延伸的固定接触; 以及将移动接触件保持在面对孔径的位置并驱动行驶接触件的双压电晶片部分。双晶片部分的一端可以形成在形成在基板的正面上的氧化硅层上。

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