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    • 11. 发明申请
    • Self-Centering Electromagnetic Transducers
    • 自定心电磁传感器
    • US20140300213A1
    • 2014-10-09
    • US14245554
    • 2014-04-04
    • L-3 Communications Cincinnati Electronics Corporation
    • Andreas Fiedler
    • H02K33/16
    • H02K33/16H02K35/02
    • Self-centering electromagnetic transducers, such as linear motors and generators, are disclosed. In one embodiment, an electromagnetic transducer includes an outer yoke made of a ferromagnetic material, and a coil assembly including a plurality of loops of electrically conductive wire, wherein the coil assembly is substantially surrounded by the outer yoke. The electromagnetic transducer further includes a magnet, and an inner yoke made of ferromagnetic material. The magnet is disposed within the outer yoke such that the coil assembly surrounds the magnet. The inner yoke is disposed within the magnet, and the magnet is free to translate. The electromagnetic transducer further includes at least one high-reluctance zone positioned within the outer yoke and/or the inner yoke. In some embodiments, the electromagnetic transducer includes one or more actuators that vary a width of one or more high-reluctance zones to change a spring rate of the electromagnetic transducer.
    • 公开了诸如线性电动机和发电机的自定心电磁换能器。 在一个实施例中,电磁换能器包括由铁磁材料制成的外磁轭和包括多个导电线圈的线圈组件,其中线圈组件基本上被外磁轭包围。 电磁换能器还包括磁铁和由铁磁材料制成的内磁轭。 磁体设置在外磁轭内,使得线圈组件围绕磁体。 内磁轭设置在磁铁内,磁铁自由平移。 电磁换能器还包括位于外磁轭和/或内磁轭内的至少一个高磁阻区。 在一些实施例中,电磁换能器包括一个或多个致动器,其改变一个或多个高磁阻区域的宽度以改变电磁换能器的弹簧刚度。
    • 14. 发明申请
    • DIODE BARRIER INFRARED DETECTOR DEVICES AND BARRIER SUPERLATTICE STRUCTURES
    • 二极管屏障红外探测器和障碍超声波结构
    • US20170047461A1
    • 2017-02-16
    • US15334877
    • 2016-10-26
    • L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION
    • Yajun Wei
    • H01L31/0352H01L31/101H01L31/02H01L31/0304
    • H01L31/035236H01L31/02005H01L31/03046H01L31/101Y02E10/544
    • Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer.
    • 公开了二极管屏障红外探测器和超晶格屏障结构。 在一个实施例中,二极管屏障红外检测器件包括第一接触层,与第一接触层相邻的吸收层以及与吸收层相邻的阻挡层,以及与阻挡层相邻的第二接触层。 阻挡层包括由形成在阻挡层内的p-n结形成的二极管结构。 阻挡层可以使得对少数载流子孔基本上没有阻挡。 在另一个实施例中,二极管屏障红外检测器件包括第一接触层,与第一接触层相邻的吸收层,邻近吸收层的阻挡层和邻近阻挡层的二极管结构。 二极管结构包括第二接触层。
    • 17. 发明申请
    • DIODE BARRIER INFRARED DETECTOR DEVICES AND SUPERLATTICE BARRIER STRUCTURES
    • 二极管屏障红外探测器和超级障碍物结构
    • US20140332755A1
    • 2014-11-13
    • US14271908
    • 2014-05-07
    • L-3 Communications Cincinnati Electronics Corporation
    • Yajun Wei
    • H01L31/0352H01L31/0304
    • H01L31/035236H01L31/02005H01L31/03046H01L31/101Y02E10/544
    • Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer.
    • 公开了二极管屏障红外探测器和超晶格屏障结构。 在一个实施例中,二极管屏障红外检测器件包括第一接触层,与第一接触层相邻的吸收层以及与吸收层相邻的阻挡层,以及与阻挡层相邻的第二接触层。 阻挡层包括由形成在阻挡层内的p-n结形成的二极管结构。 阻挡层可以使得对少数载流子孔基本上没有阻挡。 在另一个实施例中,二极管屏障红外检测器件包括第一接触层,与第一接触层相邻的吸收层,邻近吸收层的阻挡层和邻近阻挡层的二极管结构。 二极管结构包括第二接触层。