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11. 发明授权

US08614925B2 Semiconductor memory device having a redundancy area 有权
标题翻译：具有冗余区域的半导体存储器件
公开(公告)号：US08614925B2
公开(公告)日：2013-12-24
申请号：US12814776
申请日：2010-06-14
申请人： Joonmin Park , Beakhyung Cho , Kwangjin Lee , Hye-Jin Kim
发明人： Joonmin Park , Beakhyung Cho , Kwangjin Lee , Hye-Jin Kim
IPC分类号： G11C7/00
CPC分类号： G11C29/785 , G11C29/808
摘要： Provided is a semiconductor memory device. The semiconductor memory includes a main area and a redundancy area. The main area includes a plurality of memory blocks sharing a write bit line and a read bit line. The redundancy area includes a plurality of redundancy memory blocks sharing a redundancy write bit line and a redundancy read bit line. The redundancy area is provided to replace a component in the main area having a defect.
摘要翻译：提供了一种半导体存储器件。半导体存储器包括主区域和冗余区域。主区域包括共享写入位线和读取位线的多个存储器块。冗余区域包括共享冗余写位线和冗余读位线的多个冗余存储块。提供冗余区域以替换具有缺陷的主区域中的部件。

12. 发明申请

US20110017370A1 ALUMINUM ALLOY SHEET WITH EXCELLENT POST-FABRICATION SURFACE QUALITIES AND METHOD OF MANUFACTURING SAME 有权
标题翻译：具有优异的后整理表面质量的铝合金板及其制造方法
公开(公告)号：US20110017370A1
公开(公告)日：2011-01-27
申请号：US12934321
申请日：2009-03-26
申请人： Yasuo Takaki , Takeo Sakurai , Kwangjin Lee
发明人： Yasuo Takaki , Takeo Sakurai , Kwangjin Lee
IPC分类号： C22F1/05 , C22C21/04 , C22F1/043 , C22C21/08 , C22C21/14 , C22C21/16
CPC分类号： C22C21/08 , C22F1/043 , C22F1/05
摘要： Disclosed is an Al—Mg—Si aluminum alloy sheet that can prevent ridging marks during press forming and has good reproducibility even with stricter fabricating conditions. In an Al—Mg—Si aluminum alloy sheet of a specific composition, hot rolling is performed on the basis of a set relationship between the rolling start temperature Ts and the rolling finish temperature Tf ° C., whereby the relationship of the cube orientation distribution profile in the horizontal direction of the sheet with the cube orientation alone or another crystal orientation distribution profile at various locations in the depth direction of the sheet is made more uniform, suppressing the appearance of ridging marks that develop during sheet press forming.
摘要翻译：公开了能够防止冲压成形时的凸起痕迹的Al-Mg-Si铝合金板，即使在更严格的制造条件下也具有良好的再现性。在具体组成的Al-Mg-Si铝合金板中，基于轧制开始温度Ts和轧制终轧温度Tf℃之间的设定关系进行热轧，由此立方取向分布在片材的水平方向上的单个立方体取向或在片材的深度方向上的各个位置处的另一晶体取向分布轮廓的形状更均匀，从而抑制在片材冲压成形期间产生的皱纹的外观。

13. 发明申请

US20100329053A1 SEMICONDUCTOR MEMORY DEVICE HAVING A REDUNDANCY AREA 有权
标题翻译：具有冗余区域的半导体存储器件
公开(公告)号：US20100329053A1
公开(公告)日：2010-12-30
申请号：US12814776
申请日：2010-06-14
申请人： Joonmin Park , Beakhyung Cho , Kwangjin Lee , Hye-Jin Kim
发明人： Joonmin Park , Beakhyung Cho , Kwangjin Lee , Hye-Jin Kim
IPC分类号： G11C29/04 , G11C8/00
CPC分类号： G11C29/785 , G11C29/808
摘要： Provided is a semiconductor memory device. The semiconductor memory includes a main area and a redundancy area. The main area includes a plurality of memory blocks sharing a write bit line and a read bit line. The redundancy area includes a plurality of redundancy memory blocks sharing a redundancy write bit line and a redundancy read bit line. The redundancy area is provided to replace a component in the main area having a defect.
摘要翻译：提供了一种半导体存储器件。半导体存储器包括主区域和冗余区域。主区域包括共享写位线和读位线的多个存储块。冗余区域包括共享冗余写位线和冗余读位线的多个冗余存储块。提供冗余区域以替换具有缺陷的主区域中的部件。

14. 发明申请

US20100118595A1 RESISTANCE VARIABLE MEMORY DEVICES AND READ METHODS THEREOF 有权
标题翻译：电阻可变存储器件及其读取方法
公开(公告)号：US20100118595A1
公开(公告)日：2010-05-13
申请号：US12691769
申请日：2010-01-22
申请人： Junsoo Bae , Dueung Kim , Kwangjin Lee , Hyungrok Oh , Beakhyung Cho , Byunggil Choi , Woo-Yeong Cho , Yu-Hwan Ro
发明人： Junsoo Bae , Dueung Kim , Kwangjin Lee , Hyungrok Oh , Beakhyung Cho , Byunggil Choi , Woo-Yeong Cho , Yu-Hwan Ro
IPC分类号： G11C7/12 , G11C11/00
CPC分类号： G11C8/10 , G11C5/145 , G11C7/04 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0038 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C2013/0054 , G11C2013/0076 , G11C2013/0078 , G11C2213/72
摘要： A resistance-variable memory device includes memory cells, a high voltage circuit, a precharging circuit, a bias circuit, and a sense amplifier. Each memory cell may, for example, include a resistance-variable material and a diode connected to a bitline. The high voltage circuit provides a high voltage from a power source. The precharging circuit raises the bitline up to the high voltage after charging the bitline up to the power source voltage. The bias circuit supplies a read current to the bitline using the high voltage. The sense amplifier compares a voltage of the bitline with a reference voltage by means of the high voltage.
摘要翻译：电阻可变存储器件包括存储单元，高压电路，预充电电路，偏置电路和读出放大器。每个存储单元可以例如包括电阻可变材料和连接到位线的二极管。高压电路从电源提供高电压。预充电电路将位线充电至电源电压后，将位线升高至高电压。偏置电路使用高电压向位线提供读取电流。读出放大器通过高电压将位线的电压与参考电压进行比较。

15. 发明申请

US20070199778A1 Vented disc brake rotor 审中-公开
标题翻译：通风盘式制动转子
公开(公告)号：US20070199778A1
公开(公告)日：2007-08-30
申请号：US11711194
申请日：2007-02-27
申请人： Kwangjin Lee
发明人： Kwangjin Lee
IPC分类号： F16D65/12
CPC分类号： F16D65/12 , F16D2065/1308 , F16D2065/1316 , F16D2065/1328 , F16D2065/1344
摘要： A vented brake disc rotor including a first annulus-shaped braking plate having an inner surface and an outer surface, a second annulus-shaped braking plate having an inner surface and an outer surface, the second braking plate being generally parallel with and spaced apart from the first braking plate, wherein the first and second braking plates define a central axis of rotation, a plurality of rib walls positioned between the inner surface of the first braking plate and the inner surface of the second braking plate, the plurality of rib walls connecting the first braking plate to the second braking plate and defining a plurality of channels between the first braking plate and the second braking plate, wherein the of the rib walls includes a radially outward tip and a radially inward portion, and a hat portion including a central mounting face and a hat wall extending generally axially from the mounting face, wherein the hat wall includes a plurality of support arms extending generally radially outward from the hat wall, wherein each of the support arms is connected to the radially inward portion of two adjacent rib walls.
摘要翻译：一种通风的制动盘转子，包括具有内表面和外表面的第一环形制动板，具有内表面和外表面的第二环形制动板，所述第二制动板通常平行于并与其间隔开所述第一制动板，其中所述第一和第二制动板限定中心旋转轴线;多个肋壁，其定位在所述第一制动板的内表面和所述第二制动板的内表面之间，所述多个肋壁连接所述第一制动板连接到所述第二制动板并且在所述第一制动板和所述第二制动板之间限定多个通道，其中所述肋壁包括径向向外的尖端和径向向内的部分，以及帽部分，安装面和帽壁，其大致轴向地从安装面延伸，其中，帽壁包括多个总体延伸的支撑臂从帽壁径向向外延伸，其中每个支撑臂连接到两个相邻的肋壁的径向向内的部分。

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