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    • 19. 发明授权
    • Thermally conductive compound and semiconductor device using the same
    • 导电性化合物及使用其的半导体器件
    • US06255376B1
    • 2001-07-03
    • US09123756
    • 1998-07-27
    • Kunihide ShikataToshihiko Maeda
    • Kunihide ShikataToshihiko Maeda
    • C08K338
    • C08K3/28C08K3/08C08K3/22C08K5/0016H01L2224/05571H01L2224/05573H01L2224/16225H01L2224/32225H01L2224/73204H01L2224/73253H01L2924/00014C08L23/08H01L2924/00H01L2224/05599
    • A thermally conductive compound which comprises 15 to 60 volume % of thermoplastic carrier resin consisting of a copolymer of a plasticizer with ethylene or of a polymer of the plasticizer, polyethylene and the copolymer, 40 to 85 volume % of thermally conductive filler particles dispersed in the carrier resin, and 0.5 to 5 weight % (for the filler particles) of a dispersing agent having (a) hydrophilic group(s) and (a) hydrophobic group(s). The thermally conductive compound has a high thermal conductivity and a plasticity in the range of temperatures of −40 to 50° C., and when it is interposed between an insulator body and a semiconductor element mounted thereon or between the semiconductor element and a cap, the heat generated by an operation of the semiconductor element is rapidly transferred and the thermal stress caused by the difference of coefficients of thermal expansion between the semiconductor element and the insulator body or cap is absorbed and relieved to cause no phase separation between them. The semiconductor device using the thermal compound, accordingly, is highly reliable.
    • 包含15至60体积%的由增塑剂与乙烯的共聚物或增塑剂的聚合物,聚乙烯和共聚物组成的热塑性载体树脂的导热性化合物,分散在其中的40至85体积%的导热填料颗粒 载体树脂和0.5至5重量%(对于填料颗粒)具有(a)亲水基团和(a)疏水基团的分散剂。 导热性化合物在-40〜50℃的温度范围内具有高导热性和可塑性,并且当介于绝缘体和安装在其上的半导体元件之间或半导体元件与盖之间时, 由半导体元件的工作产生的热量被快速转移,并且由半导体元件和绝缘体或帽之间的热膨胀系数的差引起的热应力被吸收和释放,从而不会导致它们之间的相分离。 因此,使用热化合物的半导体器件是高度可靠的。
    • 20. 发明授权
    • Alumina sintered product
    • 氧化铝烧结产品
    • US5830819A
    • 1998-11-03
    • US424782
    • 1995-04-19
    • Kunihide ShikataKenichi NagaeToshihiko UemuraMasaki HayashiTsuneo Muchi
    • Kunihide ShikataKenichi NagaeToshihiko UemuraMasaki HayashiTsuneo Muchi
    • C04B35/117H01J29/48C04B35/10
    • H01J29/485C04B35/117
    • An aluminous sintered product comprising 70 to 96% by weight of an alumina component and 4 to 30% by weight of additives, said additives including at least the one selected from oxides of elements of the Group 5a of periodic table and at least the one selected from oxides of metals of the iron family and oxides of manganese, titanium, calcium, magnesium, chromium and silica, and said aluminous sintered product exhibiting a volume resistivity of from 1.times.10.sup.7 to 1.times.10.sup.13 .OMEGA.-cm over a temperature range of from 25.degree. to 75.degree. C. and an absolute value of the temperature coefficient of volume resistivity of not larger than 1.8%/.degree.C. under the application of high voltages. The sintered product is used as antistatic part such as conveyer arm, handling jig, tweezers for holding wafers and the like that must not be electrostatically charged in an apparatus for producing semiconductors, and as resistance substrate, electrically conducting material, contact, heater, part in vacuum tubes, and part for electron guns in a CRT such as of TVs and the like.
    • 包含70至96重量%的氧化铝组分和4至30重量%的添加剂的高铝烧结产品,所述添加剂至少包括选自周期表第5a组元素的氧化物和至少一种选自 由铁族金属的氧化物和锰,钛,钙,镁,铬和二氧化硅的氧化物组成,所述铝烧结产品在25℃至75℃的温度范围内体积电阻率为1×10 7至1×10 13欧姆 - ℃,体积电阻率的温度系数的绝对值不大于1.8%/℃。 烧结体作为防静电部件,例如输送臂,处理夹具,用于保持晶片等的镊子,在用于制造半导体的装置中不得静电,并且作为电阻基板,导电材料,接触,加热器,部件 在真空管中,以及诸如电视机等的CRT中的电子枪的部件。