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11. 发明授权

US07692021B2 NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
标题翻译： NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件
公开(公告)号：US07692021B2
公开(公告)日：2010-04-06
申请号：US11508925
申请日：2006-08-24
申请人： Eun Jeong Jeong , Joo Young Kim , Hyun Sik Moon , Bang Lin Lee , Kook Min Han , Eun Kyung Lee
发明人： Eun Jeong Jeong , Joo Young Kim , Hyun Sik Moon , Bang Lin Lee , Kook Min Han , Eun Kyung Lee
IPC分类号： C07D277/20 , C07D277/60
CPC分类号： C07D495/04 , C07D417/14 , H01L51/0545 , H01L51/5048
摘要： Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.
摘要翻译：本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

12. 发明申请

US20090256143A1 OLIGOTHIOPHENE-ARYLENE DERIVATIVES AND ORGANIC THIN FILM TRANSISTORS USING THE SAME 有权
标题翻译：邻苯二甲酰亚胺衍生物和有机薄膜晶体管
公开(公告)号：US20090256143A1
公开(公告)日：2009-10-15
申请号：US12390841
申请日：2009-02-23
申请人： Eun Jeong Jeong , Chang Ju Kim , Bang Lin Lee , Sang Yoon Lee , Kook Min Han
发明人： Eun Jeong Jeong , Chang Ju Kim , Bang Lin Lee , Sang Yoon Lee , Kook Min Han
IPC分类号： H01L51/30 , H01L51/10
CPC分类号： H01L51/0068 , C08G61/12 , C08G61/126 , H01L51/0036 , H01L51/0072 , H01L51/0545
摘要： An oligothiophene-arylene derivative wherein an arylene having n-type semiconductor characteristics is introduced into an oligothiophene having p-type semiconductor characteristics, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative.
摘要翻译：将具有n型半导体特性的亚芳基引入具有p型半导体特性的低聚噻吩中的低聚噻吩 - 亚芳基衍生物，同时具有p型和n型半导体特性。另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。

13. 发明申请

US20090218564A1 Alternating copolymers of phenylene vinylene and biarylene vinylene, preparation method thereof, and organic thin flim transister comprising the same 审中-公开
标题翻译：亚苯基亚乙烯基和亚乙烯基亚乙烯基的交替共聚物及其制备方法和包含其的有机薄膜转运器
公开(公告)号：US20090218564A1
公开(公告)日：2009-09-03
申请号：US12081680
申请日：2008-04-18
申请人： Jong II Park , Kook Min Han , Sang Yoon Lee , Eun Jeong Jeong
发明人： Jong II Park , Kook Min Han , Sang Yoon Lee , Eun Jeong Jeong
IPC分类号： H01L51/30 , C08F228/06
CPC分类号： C08G61/123 , C08G61/124 , C08G61/125 , C08G61/126 , H01L51/0043 , H01L51/0545 , Y02E10/549
摘要： Disclosed herein are an alternating copolymer of phenylene vinylene and biarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and biarylene vinylene.
摘要翻译：本文公开了亚苯基亚乙烯基和双亚乙烯基亚乙烯基的交替共聚物，其制备方法和包括其的有机薄膜晶体管。有机薄膜晶体管由于其有机活性层由亚苯基亚乙烯基和亚乙烯基亚乙烯基的交替共聚物形成，因此保持低截止漏电流并实现高导通/截止电流比和高电荷迁移率。

14. 发明授权

US07547574B2 Organic thin film transistor(s) and method(s) for fabricating the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07547574B2
公开(公告)日：2009-06-16
申请号：US11297396
申请日：2005-12-09
申请人： Hyun Jung Park , Sang Yoon Lee , Eun Jeong Jeong , Kook Min Han , Jung Seok Hahn , Tae Woo Lee
发明人： Hyun Jung Park , Sang Yoon Lee , Eun Jeong Jeong , Kook Min Han , Jung Seok Hahn , Tae Woo Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/105 , H01L51/0055 , H01L51/052
摘要： Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer wherein the metal oxide source/drain electrodes are surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group. According to example embodiments of the present invention, the surface of the source/drain electrodes may be modified to be more hydrophobic and/or the work function of a metal oxide constituting the source/drain electrodes may be increased to above that of an organic semiconductor material constituting the organic semiconductor layer. Organic thin film transistors fabricated according to one or more example embodiments of the present invention may exhibit higher charge carrier mobility. Also disclosed are various example devices including display devices having organic thin film transistors made by example embodiments of the present invention.
摘要翻译：本发明的制造有机薄膜晶体管的示例实施例包括基板，栅电极，栅极绝缘层，金属氧化物源极/漏极和有机半导体层，其中金属氧化物源极/漏极用包含磺酸基团的自组装单层（SAM）形成化合物。根据本发明的示例性实施例，源/漏电极的表面可以被修改为更疏水，和/或构成源/漏电极的金属氧化物的功函数可以增加到高于有机半导体的功函数构成有机半导体层的材料。根据本发明的一个或多个示例性实施例制造的有机薄膜晶体管可以表现出更高的载流子迁移率。还公开了包括具有由本发明的示例性实施例制成的有机薄膜晶体管的显示器件的各种示例器件。

15. 发明授权

US07368510B2 Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units 有权
标题翻译：含有低聚噻吩和n型杂芳族单元的有机半导体共聚物
公开(公告)号：US07368510B2
公开(公告)日：2008-05-06
申请号：US11073691
申请日：2005-03-08
申请人： Bang Lin Lee , Kook Min Han , Jung Han Shin , Sang Yoon Lee , Eun Jeong Jeong
发明人： Bang Lin Lee , Kook Min Han , Jung Han Shin , Sang Yoon Lee , Eun Jeong Jeong
IPC分类号： C08F8/18 , H01L29/08 , H01L29/02 , H01L51/30 , H01B1/12
CPC分类号： H01L51/0043 , H01L51/0036 , H01L51/0512 , Y10T428/31533
摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
摘要翻译：示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

16. 发明申请

US20070194386A1 Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same 有权
标题翻译：制造有机薄膜晶体管的方法和使用其制造的有机薄膜晶体管
公开(公告)号：US20070194386A1
公开(公告)日：2007-08-23
申请号：US11604826
申请日：2006-11-28
申请人： Jung Seok Hahn , Bon Won Koo , Joo Young Kim , Kook Min Han , Sang Yoon Lee
发明人： Jung Seok Hahn , Bon Won Koo , Joo Young Kim , Kook Min Han , Sang Yoon Lee
IPC分类号： H01L29/94
CPC分类号： H01L51/105 , H01L51/0036 , H01L51/0545 , H01L2251/308
摘要： Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.
摘要翻译：公开了制造由基板，栅极，栅极绝缘膜，金属氧化物源极/漏极和有机半导体层组成的有机薄膜晶体管的方法。所述方法包括将足够量的含有活性离子的自组装单层化合物施加到金属氧化物电极的表面以形成自组装单层。在金属氧化物电极和有机半导体层之间的界面处存在活性离子来改变这些材料的相对功函数。此外，在栅极绝缘膜上存在自组装单层趋于减小滞后。因此，根据示例性实施例制造的有机薄膜晶体管倾向于表现出改善的电荷迁移率，改善的栅极绝缘膜性质和与有机绝缘体相关联的减小的滞后。

17. 发明授权

US07030409B2 Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain 有权
标题翻译：在骨架链中含有喹喔啉环的有机薄膜晶体管的有机半导体聚合物
公开(公告)号：US07030409B2
公开(公告)日：2006-04-18
申请号：US10844380
申请日：2004-05-13
申请人： Bang Lin Lee , Eun Jeong Jeong , Kook Min Han , In Nam Kang
发明人： Bang Lin Lee , Eun Jeong Jeong , Kook Min Han , In Nam Kang
IPC分类号： H01L21/00
CPC分类号： H01L51/0043 , C08G61/122 , C08G61/124 , C08G61/125 , C08G61/126 , C08G73/0694 , H01L21/31691 , H01L51/0036 , H01L51/0516 , H01L51/0545
摘要： Disclosed herein is a composite-structured organic semiconductor polymer for an organic thin film transistor which contains quinoxaline rings in the backbone of the polymer. According to the organic semiconductor polymer, since quinoxaline rings having n-type semiconductor characteristics, such as high electron affinity, are incorporated into a polythiophene having p-type semiconductor characteristics, the organic semiconductor polymer simultaneously exhibits both p-type and n-type semiconductor characteristics. In addition, the polythienylquinoxaline derivative exhibits high solubility in organic solvents, co-planarity and stability in air. Furthermore, when the polythienylquinoxaline derivative is used as an active layer of an organic thin film transistor, the organic thin film transistor exhibits a high charge carrier mobility and a low off-state leakage current.
摘要翻译：本文公开了一种用于有机薄膜晶体管的复合结构有机半导体聚合物，其在聚合物的主链中含有喹喔啉环。根据有机半导体聚合物，由于具有高电子亲和性的n型半导体特性的喹喔啉环被并入具有p型半导体特性的聚噻吩中，所以有机半导体聚合物同时呈现p型和n型半导体特点此外，聚噻吩基喹喔啉衍生物在有机溶剂中表现出高溶解度，在空气中的共平面性和稳定性。此外，当使用聚噻吩基喹喔啉衍生物作为有机薄膜晶体管的有源层时，有机薄膜晶体管表现出高的载流子迁移率和低截止状态的漏电流。

18. 发明授权

US08476103B2 Methods of fabricating organic thin film transistors 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US08476103B2
公开(公告)日：2013-07-02
申请号：US13355940
申请日：2012-01-23
申请人： Bon Won Koo , Joon Yong Park , Jung Seok Hahn , Joo Young Kim , Kook Min Han , Sang Yoon Lee
发明人： Bon Won Koo , Joon Yong Park , Jung Seok Hahn , Joo Young Kim , Kook Min Han , Sang Yoon Lee
IPC分类号： H01L21/00
CPC分类号： H01L51/0512 , H01L27/283 , H01L51/0005 , H01L51/0558
摘要： Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.
摘要翻译：公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法，包括制备至少具有水溶性聚合物，UV固化剂和水溶性氟化合物的水性涂料组合物。将该涂料组合物施加到基材上，使用UV辐射曝光，然后使用水性显影组合物显影以形成图案。因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影，所以该方法倾向于保持存在于基材上的其它有机结构的完整性。此外，氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度，从而可以避免或减少随后的表面处理。

19. 发明申请

US20110209762A1 Composition containing thiazole rings, organic semiconductor polymer containing the composition, organic active layer containing the organic semiconductor polymer, organic thin film transistor containing the organic active layer, electronic device containing the organic thin film transistor and method of preparing the same 有权
标题翻译：含有噻唑环的组合物，含有该组合物的有机半导体聚合物，含有机半导体聚合物的有机活性层，含有机活性层的有机薄膜晶体管，含有机薄膜晶体管的电子器件及其制备方法
公开(公告)号：US20110209762A1
公开(公告)日：2011-09-01
申请号：US13067100
申请日：2011-05-09
申请人： Bang Lin Lee , Eun Kyung Lee , Joo Young Kim , Kook Min Han
发明人： Bang Lin Lee , Eun Kyung Lee , Joo Young Kim , Kook Min Han
IPC分类号： H01L51/46 , H01L51/30 , H01L51/54 , C08G75/32 , H01L51/48 , H01L51/40
CPC分类号： C07D417/04 , C07D417/14 , C07D421/14 , H01L51/0036 , H01L51/0512 , Y02E10/549
摘要： Disclosed herein is a composition containing hetero arylene or arylene showing a p-type semiconductor property in addition to thiophene showing a p-type semiconductor property and thiazole rings showing a n-type semiconductor property at a polymer main chain, an organic semiconductor polymer containing the composition, an organic active layer containing the organic semiconductor polymer, an organic thin film transistor (OTFT) containing the organic active layer, an electronic device containing the OTFT, and a method of preparing the same. The composition of example embodiments, which is used in an organic semiconductor polymer and contains thiazole rings, may exhibit increased solubility to an organic solvent, coplanarity, processability and an improved thin film property.
摘要翻译：本文公开了含有异亚芳基或亚芳基的组合物，除了显示p型半导体性质的噻吩外还显示p型半导体性质，在聚合物主链上显示出n型半导体性质的噻唑环，含有含有有机半导体聚合物的有机活性层，含有机活性层的有机薄膜晶体管（OTFT），含OTFT的电子器件及其制备方法。用于有机半导体聚合物并含有噻唑环的示例性实施方案的组合物可以表现出对有机溶剂的增加的溶解性，共面性，可加工性和改善的薄膜性质。

20. 发明授权

US07923529B2 Oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
标题翻译：低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
公开(公告)号：US07923529B2
公开(公告)日：2011-04-12
申请号：US12390841
申请日：2009-02-23
申请人： Eun Jeong Jeong , Chang Ju Kim , Bang Lin Lee , Sang Yoon Lee , Kook Min Han
发明人： Eun Jeong Jeong , Chang Ju Kim , Bang Lin Lee , Sang Yoon Lee , Kook Min Han
IPC分类号： C08G75/00 , C08G75/06 , H01L29/02 , H01L29/08
CPC分类号： H01L51/0068 , C08G61/12 , C08G61/126 , H01L51/0036 , H01L51/0072 , H01L51/0545
摘要： An oligothiophene-arylene derivative wherein an arylene having n-type semiconductor characteristics is introduced into an oligothiophene having p-type semiconductor characteristics, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative.
摘要翻译：将具有n型半导体特性的亚芳基引入具有p型半导体特性的低聚噻吩中的低聚噻吩 - 亚芳基衍生物，同时具有p型和n型半导体特性。另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。

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