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11. 实用新型

KR870000022Y1 이중 노크식 필기구 失效
公开(公告)号：KR870000022Y1
公开(公告)日：1987-01-28
申请号：KR840006503
申请日：1984-07-09
申请人： KIM YU SUNG , YUN HUI JONG
发明人： KIM YU-SUNG , YUN HUI-JONG
IPC分类号： B43K21/00

12. 实用新型

KR860003282Y1 필기구 失效
公开(公告)号：KR860003282Y1
公开(公告)日：1986-11-22
申请号：KR840006504
申请日：1984-07-09
申请人： KIM YU SUNG , YUN HUI JONG
发明人： KIM YU-SUNG , YUN HUI-JONG
IPC分类号： B43K21/00

13. 实用新型

KR860003280Y1 노크식 필기구 失效
公开(公告)号：KR860003280Y1
公开(公告)日：1986-11-22
申请号：KR840006576
申请日：1984-07-10
申请人： KIM YU SUNG , YUN HUI JONG
发明人： KIM YU-SUNG , YUN HUI-JONG
IPC分类号： B43K3/00

14. 实用新型

KR840002394Y1 지우개 삽지구 失效
公开(公告)号：KR840002394Y1
公开(公告)日：1984-11-22
申请号：KR830000829
申请日：1983-01-31
申请人： KIM YU SUNG
发明人： KIM YU-SUNG
IPC分类号： B43L19/00
摘要： 내용없음.

15. 实用新型

KR840000237Y1 심통 교환식 샤아프펜슬 失效
公开(公告)号：KR840000237Y1
公开(公告)日：1984-02-14
申请号：KR820006039
申请日：1982-07-30
申请人： KIM YU SUNG
发明人： KIM YU-SUNG
IPC分类号： B43K21/02

16. 发明公开

KR20070100459A MULTI-PLEX STRUCTURE FOR SHOWING CINEMA 无效
标题翻译：用于显示电影的多重结构
公开(公告)号：KR20070100459A
公开(公告)日：2007-10-11
申请号：KR20060031721
申请日：2006-04-07
申请人： PARK SOO MIN , LEE HYUNG OOK , KANG SEUNG WAN , KIM YU SUNG
发明人： PARK SOO MIN , KANG SEUNG WAN , KIM YU SUNG , LEE HYUNG OOK
IPC分类号： E04H3/22 , E04H3/24
CPC分类号： E04H3/22
摘要： A multiplex structure is provided to utilize space for an auditorium of a theatre in a narrow space to the maximum. A multiplex structure(100) includes a primary horizontal section(101), a sloped section(102) and a secondary horizontal section(103) in each floor. In the primary horizontal section and the secondary horizontal section, the bottom and the ceiling, which form a boundary between floors, are horizontal to the ground. In the sloped section, the bottom and the ceiling are inclined at the same angle as an auditorium(104), wherein the ceiling of one floor is the bottom of the upper floor so that the ceiling of the floor becomes higher toward a screen(105) and the bottom of the upper floor becomes lower toward a screen. The slopped boundaries of the floors are formed in zigzags so that each floor has a trapezoidal cross section, thereby to maximize space utilization.
摘要翻译：提供多重结构以最大限度地利用狭窄空间中剧院的礼堂的空间。多重结构（100）包括在每个楼层中的主水平部分（101），倾斜部分（102）和次级水平部分（103）。在主水平部分和副水平部分中，形成地板之间边界的底部和天花板与地面水平。在倾斜部分，底部和天花板以与礼堂（104）相同的角度倾斜，其中一层的天花板是上层的底部，使得地板的天花板朝向屏幕（105）变高），而上层的底部朝向屏幕变低。地板的倾斜边界以锯齿形成，使得每个楼层都具有梯形横截面，从而最大限度地利用空间。

17. 实用新型

KR840002384Y1 샤아프펜슬의 필심 노출 길이 조절장치 失效
公开(公告)号：KR840002384Y1
公开(公告)日：1984-11-22
申请号：KR830000277
申请日：1983-01-14
申请人： KIM YU SUNG
发明人： KIM YU-SUNG
IPC分类号： B43K21/00
摘要： 내용없음.

18. 发明申请

WO2010008116A2 METHOD AND CHAMBER FOR INDUCTIVELY COUPLED PLASMA PROCESSING FOR CYLINDERICAL MATERIAL WITH THREE-DIMENSIONAL SURFACE 审中-公开
标题翻译：具有三维表面的圆柱体材料的电感耦合等离子体处理方法和室
公开(公告)号：WO2010008116A2
公开(公告)日：2010-01-21
申请号：PCT/KR2008005734
申请日：2008-09-29
申请人： KOREA ELECTRO TECH RES INST , CHUNG SUNG IL , NIKIFOROV S A , OH HYUN SEOK , JEON JEONG WOO , KIM YU SUNG
发明人： CHUNG SUNG IL , NIKIFOROV S A , OH HYUN SEOK , JEON JEONG WOO , KIM YU SUNG
IPC分类号： H01L21/304
CPC分类号： H01J37/3266 , H01J37/321 , H01J37/32706 , H01J37/32761 , H01J37/34
摘要： The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.
摘要翻译：本发明涉及用于具有三维轮廓的圆柱形工件的感应耦合等离子体处理室和方法，并且更具体地涉及用于具有三维轮廓的圆柱形工件的感应耦合等离子体处理反应器和方法，其中，用作内部RF天线的工件通过一端的阻抗匹配网络与另一端的端接电容器连接到RF电源，以实现低等离子体污染，将致密均匀的等离子体限制在衬底附近并且抑制二次电子从衬底发射，并且等离子体工艺可以应用于3-D线性半导体器件，具有平面或3-D结构化微米或纳米图案的金属，玻璃，陶瓷或聚合物衬底等。

19. 发明申请

WO2009128575A1 LOW TEMPERATURE POLYCRYSTALLINE GROWTH 审中-公开
标题翻译：低温多晶生长
公开(公告)号：WO2009128575A1
公开(公告)日：2009-10-22
申请号：PCT/KR2008/002176
申请日：2008-04-17
申请人： UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATION , KIM, Dae Il , KIM, Yu Sung , PARK, Ji Hye , LEE, Jae Young , JANG, Ho Sung , CHOI, Dae Han
发明人： KIM, Dae Il , KIM, Yu Sung , PARK, Ji Hye , LEE, Jae Young , JANG, Ho Sung , CHOI, Dae Han
IPC分类号： H01L21/28 , C30B29/06
CPC分类号： C23C14/086 , C23C14/025
摘要： Provided is a low- temperature poly crystalline growth method including: vacuum depositing Au (gold) on a substrate and crystallizing the deposited Au to form an Au film; vacuum depositing a conductive substance or a semi-conducting substance on the Au film to form an upper film; and growing the conductive substance or semi-conducting substance in correspondence to an crystalline structure of the Au film, thereby crystallizing the upper film.
摘要翻译：提供了一种低温多晶生长方法，包括：在衬底上真空沉积Au（金）并使沉积的Au结晶以形成Au膜; 在Au膜上真空沉积导电物质或半导电物质以形成上膜; 并且与Au膜的晶体结构对应地生长导电物质或半导电物质，从而使上层膜结晶。

20. 发明申请

WO2010008116A3 METHOD AND CHAMBER FOR INDUCTIVELY COUPLED PLASMA PROCESSING FOR CYLINDERICAL MATERIAL WITH THREE-DIMENSIONAL SURFACE 审中-公开
公开(公告)号：WO2010008116A3
公开(公告)日：2010-01-21
申请号：PCT/KR2008/005734
申请日：2008-09-29
申请人： KOREA ELECTRO TECHNOLOGY RESEARCH INSTITUTE , CHUNG, Sung Il , NIKIFOROV, S.A. , OH, Hyun Seok , JEON, Jeong Woo , KIM, Yu Sung
发明人： CHUNG, Sung Il , NIKIFOROV, S.A. , OH, Hyun Seok , JEON, Jeong Woo , KIM, Yu Sung
IPC分类号： H01L21/304
摘要： The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.

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