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11. 发明申请

US20130062657A1 LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光二极管结构及其制造方法
公开(公告)号：US20130062657A1
公开(公告)日：2013-03-14
申请号：US13614090
申请日：2012-09-13
申请人： Kuo-Lung Fang , Jui-Yi Chu , Jun-Rong Chen , Chi-Wen Kuo
发明人： Kuo-Lung Fang , Jui-Yi Chu , Jun-Rong Chen , Chi-Wen Kuo
IPC分类号： H01L33/62
CPC分类号： H01L33/145 , H01L33/382 , H01L2933/0016
摘要： A light-emitting diode structure is disclosed. A substrate has a first semiconductor layer, a light-emitting layer and a second semiconductor layer formed thereon. The first and second semiconductor layers are of opposite conductivity types. A first contact electrode is disposed between the first semiconductor layer and the substrate, and has a protruding portion extending into the second semiconductor layer. A barrier layer is conformally formed on the first contact electrode and exposes a top surface of the protruding portion. A current blocking member is disposed on the barrier layer and around at least a sidewall of the protruding portion. A second contact electrode is disposed between the first semiconductor layer and the first contact electrode, and in direct contact with the first semiconductor layer, wherein the second contact electrode is electrically insulated from the first contact electrode by the barrier layer.
摘要翻译：公开了一种发光二极管结构。基板具有形成在其上的第一半导体层，发光层和第二半导体层。第一和第二半导体层具有相反的导电类型。第一接触电极设置在第一半导体层和基板之间，并且具有延伸到第二半导体层中的突出部分。阻挡层在第一接触电极上共形地形成并暴露突出部分的顶表面。电流阻挡构件设置在阻挡层上并且至少围绕突出部分的侧壁。第二接触电极设置在第一半导体层和第一接触电极之间，并且与第一半导体层直接接触，其中第二接触电极通过阻挡层与第一接触电极电绝缘。

12. 发明授权

US07629607B2 Organic non-volatile memory material and memory device utilizing the same 有权
标题翻译：有机非挥发性记忆材料和利用其的记忆装置
公开(公告)号：US07629607B2
公开(公告)日：2009-12-08
申请号：US11877853
申请日：2007-10-24
申请人： Jun-Rong Chen , Heng-Tien Lin , Jui-Fen Fan , Gue-Wuu Hwang , Ching Ting , Yi-Jen Chan
发明人： Jun-Rong Chen , Heng-Tien Lin , Jui-Fen Fan , Gue-Wuu Hwang , Ching Ting , Yi-Jen Chan
IPC分类号： G11C11/00
CPC分类号： H01L51/0575 , G11C13/0014 , G11C13/0016 , H01L51/0591
摘要： Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.
摘要翻译：公开了一种有机非挥发性记忆（ONVM）材料，其包括均匀分散在第一聚合物中的纳米颗粒。纳米颗粒具有由第二聚合物覆盖以形成核/壳结构的金属芯，并且第一聚合物具有比第二聚合物更高的聚合度和分子量。本发明的ONVM材料具有高均匀性，从而稳定存储器件的电性能，例如增加重写计数，增加数据保持时间，降低驱动电压，减少写入电流和增强电流开/关比。

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