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    • 11. 发明授权
    • Sensor module package structure and method of the same
    • 传感器模块的封装结构和方法相同
    • US07423335B2
    • 2008-09-09
    • US11954087
    • 2007-12-11
    • Wen-Kun YangJui-Hsien Chang
    • Wen-Kun YangJui-Hsien Chang
    • H01L23/02H01L29/22H01L29/227H01L33/00H01L23/34H01L23/48H01L23/52H01L29/40
    • H01L27/14618H01L24/24H01L27/14634H01L27/14683H01L2224/04105H01L2224/12105H01L2224/32225H01L2224/73267H01L2924/014H01L2924/14H04N5/2251H04N5/2257H01L2924/00
    • An image sensor multi-chips package structure, includes a first package including a first chip with image sensors having first bonding pads and micro lens on a first active surface, a first die receiving window and first conductive inter-connecting through holes penetrated from a first upper contact pads on a first upper surface of the first chip to a first lower contact pads on a first lower surface of the first chip, wherein a first upper build up layer on the active surface of the first chip coupling from the first bonding pads to the first upper contact pads; a second package comprising a second chip having second bonding pads on a second active surface, a second die receiving window and second conductive inter-connecting through holes penetrated from a second upper contact pads of a second upper surface of the second chip to a second lower contact pads on a second lower surface of the second chip, wherein a second upper build up layers on the second upper surface for coupling from the second bonding pads to the second upper contact pads, and second lower build up layers under the second lower surface for coupling from the second lower contact pads to terminal pads located under the second lower surface; and inter-connecting structures coupled between the first lower contact pads to the second upper contact pads.
    • 一种图像传感器多芯片封装结构,包括第一封装,其包括具有第一焊盘和第一有源表面上的微透镜的图像传感器的第一芯片,第一裸片接收窗和第一导电互连通孔, 所述第一芯片的第一上表面上的上接触焊盘到所述第一芯片的第一下表面上的第一下接触焊盘,其中所述第一芯片的所述有源表面上的第一上层叠层从所述第一焊盘耦合到 第一个上接触垫; 第二封装,包括具有在第二有源表面上的第二接合焊盘的第二芯片,第二管芯接收窗口和从第二芯片的第二上表面的第二上接触焊盘穿入的第二导电互连通孔, 所述第二芯片的第二下表面上的接触焊盘,其中在所述第二上表面上的用于从所述第二接合焊盘耦合到所述第二上触点焊盘的第二上层叠层,以及在所述第二下表面下方的第二下堆积层, 从所述第二下接触焊盘耦合到位于所述第二下表面下方的端子焊盘; 以及耦合在所述第一下接触焊盘与所述第二上接触焊盘之间的连接结构。
    • 14. 发明授权
    • Data writing method for flash memory and controller using the same
    • Flash存储器的数据写入方法及使用其的控制器
    • US08606987B2
    • 2013-12-10
    • US12052348
    • 2008-03-20
    • Jiunn-Yeong YangJui-Hsien ChangChien-Hua ChuJian-Yo SuChih-Kang Yeh
    • Jiunn-Yeong YangJui-Hsien ChangChien-Hua ChuJian-Yo SuChih-Kang Yeh
    • G06F12/00G06F13/00G06F13/28
    • G06F12/0246G06F2212/7203
    • A data writing method for a flash memory is provided. The data writing method includes: dividing a new data into at lease one sub-data by the size of a writing unit; selecting one of a plurality of spare blocks from the flash memory as a substitute block for substituting a data block, wherein the new data is to be written into the data block; sequentially writing the sub-data having the size of the writing unit into the substitute block in the writing unit; and storing the sub-data not having the size of the writing unit into a temporary area. The writing efficiency of the flash memory can be improved by temporarily storing the sub-data not having the size of the writing unit into the temporary area and then writing the sub-data not having the size of the writing unit with subsequent data into the substitute block.
    • 提供了一种用于闪速存储器的数据写入方法。 数据写入方法包括:按照写入单元的大小将新数据划分为至少一个子数据; 从闪存中选择多个备用块中的一个作为用于替换数据块的替代块,其中新数据将被写入数据块; 将具有写入单元的大小的子数据顺序地写入写入单元中的替代块; 并将不具有写入单元大小的子数据存储在临时区域中。 通过将不具有写入单元的大小的子数据临时存储到临时区域中,然后将不具有后续数据的具有写入单元的大小的子数据写入替代物,可以提高闪速存储器的写入效率 块。
    • 17. 发明申请
    • DATA WRITING METHOD FOR FLASH MEMORY AND CONTROLLER USING THE SAME
    • 闪存存储器的数据写入方法和使用该存储器的控制器
    • US20090150597A1
    • 2009-06-11
    • US12052348
    • 2008-03-20
    • Jiunn-Yeong YangJui-Hsien ChangChien-Hua ChuJian-Yo SuChih-Kang Yeh
    • Jiunn-Yeong YangJui-Hsien ChangChien-Hua ChuJian-Yo SuChih-Kang Yeh
    • G06F12/02
    • G06F12/0246G06F2212/7203
    • A data writing method for a flash memory is provided. The data writing method includes: dividing a new data into at lease one sub-data by the length of a writing unit; selecting one of a plurality of spare blocks from the flash memory as a substitute block for substituting a data block, wherein the new data is to be written into the data block; sequentially writing the sub-data having the length of the writing unit into the substitute block in the writing unit; and storing the sub-data not having the length of the writing unit into a temporary area. The writing efficiency of the flash memory can be improved by temporarily storing the sub-data not having the length of the writing unit into the temporary area and then writing the sub-data not having the length of the writing unit with subsequent data into the substitute block.
    • 提供了一种用于闪速存储器的数据写入方法。 数据写入方法包括:将新数据分割为一个写入单元长度的一个子数据; 从闪存中选择多个备用块中的一个作为用于替换数据块的替代块,其中新数据将被写入数据块; 将具有写入单元的长度的子数据顺序地写入写入单元中的替换块; 以及将不具有写入单元的长度的子数据存储在临时区域中。 通过将不具有写入单元的长度的子数据临时存储到临时区域中,然后将不具有写入单元的长度的子数据与后续数据写入替代物,可以提高闪速存储器的写入效率 块。