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11. 发明授权

US06284499B1 Method for producing L-sorbose and apparatus for culturing microorganisms 失效
标题翻译： L-山梨糖的生产方法和培养微生物的装置
公开(公告)号：US06284499B1
公开(公告)日：2001-09-04
申请号：US08101093
申请日：1993-08-03
申请人： Katsumitsu Kishimoto , Kazuhiko Kintaka , Hiroyuki Yoshinaga
发明人： Katsumitsu Kishimoto , Kazuhiko Kintaka , Hiroyuki Yoshinaga
IPC分类号： C12P1902
CPC分类号： C12M41/32 , C12M41/34 , C12P19/02
摘要： A method for producing L-sorbose by microbiological oxidation of D-sorbitol which comprises adding D-sorbitol to a culture liquid in such a concentration that it does not go up to over about 5% during and after the growth phase of a microorganism used, while circulating a culture exhaust gas enriched with oxygen gas, and releasing a part of said exhaust gas out of the system. An apparatus for culturing microorganisms suitable for the method is also disclosed.
摘要翻译： D-山梨醇的微生物氧化生产L-山梨糖的方法，其包括向培养液中加入D-山梨糖醇，浓度使其在所用微生物生长期间和之后不超过约5％同时循环富含氧气的培养废气，并将一部分所述废气释放出系统。还公开了适用于该方法的培养微生物的装置。

12. 发明授权

US08617969B2 Method for producing semiconductor optical device 有权
标题翻译：半导体光学元件的制造方法
公开(公告)号：US08617969B2
公开(公告)日：2013-12-31
申请号：US13530154
申请日：2012-06-22
申请人： Kenji Sakurai , Hideki Yagi , Hiroyuki Yoshinaga
发明人： Kenji Sakurai , Hideki Yagi , Hiroyuki Yoshinaga
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , H01S5/2275
摘要： A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching.
摘要翻译：一种制造半导体光学器件的方法包括以下步骤：在衬底的主表面上生长包括蚀刻停止层和多个半导体层的半导体堆叠层; 在所述半导体层叠层的顶面上形成掩模层，使得在所述半导体堆叠层的生长步骤中产生的突起中从所述顶面突出的突起的前端部露出; 通过使用掩模层的湿蚀刻来蚀刻突起; 在通过湿蚀刻蚀刻突起之后，通过干蚀刻去除突起; 并且通过干蚀刻去除突起之后从顶表面去除掩模层。

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