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11. 发明申请

US20110298537A1 VOLTAGE DISTRIBUTION FOR CONTROLLING CMOS RF SWITCH 有权
标题翻译：用于控制CMOS射频开关的电压分配
公开(公告)号：US20110298537A1
公开(公告)日：2011-12-08
申请号：US12844640
申请日：2010-07-27
申请人： David K. Homol , Ryan M. Pratt , Hua Wang
发明人： David K. Homol , Ryan M. Pratt , Hua Wang
IPC分类号： H03F3/68 , H01L29/78 , H03G3/20
CPC分类号： H03F3/72 , G05F1/468 , G05F1/565 , G05F1/575 , H01L27/0928 , H01L29/0611 , H02M3/1584 , H03F1/0261 , H03F1/34 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/217 , H03F3/245 , H03F2200/18 , H03F2200/411 , H03F2200/451 , H03F2203/21131 , H03F2203/21139 , H03F2203/7215 , H03G3/30 , H03G3/3042 , H03H11/30 , H03K17/6872 , H04B1/40 , Y10T307/406
摘要： Disclosed are voltage distribution device and method for controlling CMOS-based devices for switching radio frequency (RF) signals. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, various bias voltages applied to such a CMOS RF switch can be facilitated by a voltage distribution component.
摘要翻译：公开了用于控制用于切换射频（RF）信号的基于CMOS的装置的电压分配装置和方法。在诸如移动电话的某些RF设备中，提供不同的放大模式可以产生性能优点。例如，在低功率和高功率模式下传输的能力通常会导致延长的电池寿命，因为只有在需要时才能激活高功率模式。在集成电路中形成的一个或多个开关可以方便地在这种放大模式之间进行切换，并且将RF信号路由到不同的放大路径。在某些实施例中，这样的RF开关可以形成为CMOS器件，并且可以基于三阱结构。在某些实施例中，施加到这种CMOS RF开关的各种偏置电压可以通过电压分布分量来促进。

12. 发明申请

US20110298435A1 APPARATUS AND METHOD FOR VOLTAGE DISTRIBUTION 审中-公开
标题翻译：电压分配的装置和方法
公开(公告)号：US20110298435A1
公开(公告)日：2011-12-08
申请号：US12844320
申请日：2010-07-27
申请人： David K. Homol , Ryan M. Pratt
发明人： David K. Homol , Ryan M. Pratt
IPC分类号： G05F1/10
CPC分类号： H03F3/72 , G05F1/468 , G05F1/565 , G05F1/575 , H01L27/0928 , H01L29/0611 , H02M3/1584 , H03F1/0261 , H03F1/34 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/217 , H03F3/245 , H03F2200/18 , H03F2200/411 , H03F2200/451 , H03F2203/21131 , H03F2203/21139 , H03F2203/7215 , H03G3/30 , H03G3/3042 , H03H11/30 , H03K17/6872 , H04B1/40 , Y10T307/406
摘要： Apparatus and methods for providing regulated voltages are disclosed. Using a single voltage regulator, a plurality of regulated voltages can be generated with a voltage distribution function. These regulated voltages can be used in a variety of applications, for example, as a bias voltage for a power amplifier. In addition, the distributed regulated voltages can implement a variety of functions, such as selectively enabling or disabling power amplifiers.
摘要翻译：公开了用于提供调节电压的装置和方法。使用单个电压调节器，可以产生具有电压分布功能的多个调节电压。这些调节电压可用于各种应用中，例如用作功率放大器的偏置电压。此外，分布式调节电压可以实现各种功能，例如选择性地启用或禁用功率放大器。

13. 发明授权

US06181173B2 Power-on reset circuit 有权
标题翻译：上电复位电路
公开(公告)号：US06181173B2
公开(公告)日：2001-01-30
申请号：US09164608
申请日：1998-10-01
申请人： David K. Homol , Alan R. Holden , Nikolaus Klemmer , Domenico Arpaia
发明人： David K. Homol , Alan R. Holden , Nikolaus Klemmer , Domenico Arpaia
IPC分类号： H03K1722
CPC分类号： H03K17/223
摘要： A power-on reset circuit for resetting the register values contained on an integrated circuit upon power-up of the integrated circuit. The power-on reset circuit can be implemented either internal or external to the integrated circuit. The power-on reset circuit generates a reset signal as long as the supply voltage is not in the operational range and maintains the reset signal for a certain time after the supply voltage has returned to its nominal value. The power-on reset circuit also provides accurate detection of a serious supply voltage drop and has low power consumption. The power-on reset circuit comprises a battery, a voltage-referenced switching circuit, a current source, a capacitor and a voltage buffer.
摘要翻译：一种用于在集成电路上电时复位包含在集成电路上的寄存器值的上电复位电路。上电复位电路可以在集成电路的内部或外部实现。上电复位电路只要电源电压不在工作范围内就产生复位信号，并在电源电压恢复到其额定值之后将复位信号保持一定时间。上电复位电路还提供严重的电源电压降的精确检测，并具有低功耗。上电复位电路包括电池，电压参考开关电路，电流源，电容器和电压缓冲器。

14. 发明授权

US08369805B2 High linearity CMOS RF switch passing large signal and quiescent power amplifier current 有权
标题翻译：高线性CMOS射频开关通过大信号和静态功率放大器电流
公开(公告)号：US08369805B2
公开(公告)日：2013-02-05
申请号：US12844246
申请日：2010-07-27
申请人： David K. Homol , Ryan M. Pratt
发明人： David K. Homol , Ryan M. Pratt
IPC分类号： H04B1/04 , H01L27/088
CPC分类号： H03F3/72 , G05F1/468 , G05F1/565 , G05F1/575 , H01L27/0928 , H01L29/0611 , H02M3/1584 , H03F1/0261 , H03F1/34 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/217 , H03F3/245 , H03F2200/18 , H03F2200/411 , H03F2200/451 , H03F2203/21131 , H03F2203/21139 , H03F2203/7215 , H03G3/30 , H03G3/3042 , H03H11/30 , H03K17/6872 , H04B1/40 , Y10T307/406
摘要： Disclosed are high linearity CMOS-based devices capable of passing large signal and quiescent power amplifier current for switching radio frequency (RF) signals, and methods for biasing such devices. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, a bias voltage applied to an isolated well of such a triple-well structure can be substantially tied to a source voltage coupled to source and drain, so as to yield desired performance features such as high amplification linearity even when the source voltage changes.
摘要翻译：公开了能够传递用于切换射频（RF）信号的大信号和静态功率放大器电流的高线性的基于CMOS的器件，以及用于偏置这些器件的方法。在诸如移动电话的某些RF设备中，提供不同的放大模式可以产生性能优点。例如，在低功率和高功率模式下传输的能力通常会导致延长的电池寿命，因为只有在需要时才能激活高功率模式。在集成电路中形成的一个或多个开关可以方便地在这种放大模式之间进行切换，并且将RF信号路由到不同的放大路径。在某些实施例中，这样的RF开关可以形成为CMOS器件，并且可以基于三阱结构。在某些实施例中，施加到这种三阱结构的隔离阱的偏置电压可以基本上连接到耦合到源极和漏极的源极电压，以便产生期望的性能特征，例如高放大线性度，即使当源电压变化。

15. 发明授权

US08368463B2 Voltage distribution for controlling CMOS RF switch 有权
标题翻译：控制CMOS射频开关的电压分配
公开(公告)号：US08368463B2
公开(公告)日：2013-02-05
申请号：US12844640
申请日：2010-07-27
申请人： David K. Homol , Ryan M. Pratt , Hua Wang
发明人： David K. Homol , Ryan M. Pratt , Hua Wang
IPC分类号： H03F1/14
CPC分类号： H03F3/72 , G05F1/468 , G05F1/565 , G05F1/575 , H01L27/0928 , H01L29/0611 , H02M3/1584 , H03F1/0261 , H03F1/34 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/217 , H03F3/245 , H03F2200/18 , H03F2200/411 , H03F2200/451 , H03F2203/21131 , H03F2203/21139 , H03F2203/7215 , H03G3/30 , H03G3/3042 , H03H11/30 , H03K17/6872 , H04B1/40 , Y10T307/406
摘要： Disclosed are voltage distribution device and method for controlling CMOS-based devices for switching radio frequency (RF) signals. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, various bias voltages applied to such a CMOS RF switch can be facilitated by a voltage distribution component.
摘要翻译：公开了用于控制用于切换射频（RF）信号的基于CMOS的装置的电压分配装置和方法。在诸如移动电话的某些RF设备中，提供不同的放大模式可以产生性能优点。例如，在低功率和高功率模式下传输的能力通常会导致延长的电池寿命，因为只有在需要时才能激活高功率模式。在集成电路中形成的一个或多个开关可以方便地在这种放大模式之间进行切换，并且将RF信号路由到不同的放大路径。在某些实施例中，这样的RF开关可以形成为CMOS器件，并且可以基于三阱结构。在某些实施例中，施加到这种CMOS RF开关的各种偏置电压可以通过电压分布分量来促进。

16. 发明申请

US20110298559A1 APPARATUS AND METHOD FOR DIRECTIONAL COUPLING 有权
标题翻译：用于方向耦合的装置和方法
公开(公告)号：US20110298559A1
公开(公告)日：2011-12-08
申请号：US12844382
申请日：2010-07-27
申请人： Philip A. Kitching , David K. Homol , Gary W. Sadowniczak , Ryan M. Pratt
发明人： Philip A. Kitching , David K. Homol , Gary W. Sadowniczak , Ryan M. Pratt
IPC分类号： H01P5/18 , H01P1/10
CPC分类号： H03F3/72 , G05F1/468 , G05F1/565 , G05F1/575 , H01L27/0928 , H01L29/0611 , H02M3/1584 , H03F1/0261 , H03F1/34 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/217 , H03F3/245 , H03F2200/18 , H03F2200/411 , H03F2200/451 , H03F2203/21131 , H03F2203/21139 , H03F2203/7215 , H03G3/30 , H03G3/3042 , H03H11/30 , H03K17/6872 , H04B1/40 , Y10T307/406
摘要： Apparatuses and methods for directional coupling are disclosed. In one embodiment, an apparatus includes a directional coupler, a termination impedance, a switch, and a control block. The directional coupler includes a power input terminal, a power output terminal, a couple terminal and a terminate terminal. The power input terminal can receive a radio frequency signal from a power amplifier, and the power output terminal can be electrically connected to a load. The switch has an ON state and an OFF state, and includes an input electrically connected to the terminate terminal and an output electrically connected to the termination impedance. The switch is configured to provide a relatively low impedance path between the input and the output when in the ON state and to provide a relatively high impedance path between the input and the output when in the OFF state. The control block can set the state of the switch.
摘要翻译：公开了用于定向耦合的装置和方法。在一个实施例中，装置包括定向耦合器，终端阻抗，开关和控制块。定向耦合器包括电源输入端子，电力输出端子，耦合端子和终端端子。电源输入端子可以接收来自功率放大器的射频信号，并且功率输出端子可以电连接到负载。开关具有导通状态和断开状态，并且包括电连接到端子端子的输入端和与端子阻抗电连接的输出。开关被配置为当处于导通状态时在输入和输出之间提供相对较低的阻抗路径，并且当处于OFF状态时，在输入和输出之间提供相对较高的阻抗路径。控制块可以设置交换机的状态。

17. 发明申请

US20110298523A1 APPARATUS AND METHOD FOR WELL BUFFERING 有权
标题翻译：用于缓冲的装置和方法
公开(公告)号：US20110298523A1
公开(公告)日：2011-12-08
申请号：US12844449
申请日：2010-07-27
申请人： David K. Homol , Karl J. Couglar
发明人： David K. Homol , Karl J. Couglar
IPC分类号： H03K17/16
CPC分类号： H03F3/72 , G05F1/468 , G05F1/565 , G05F1/575 , H01L27/0928 , H01L29/0611 , H02M3/1584 , H03F1/0261 , H03F1/34 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/217 , H03F3/245 , H03F2200/18 , H03F2200/411 , H03F2200/451 , H03F2203/21131 , H03F2203/21139 , H03F2203/7215 , H03G3/30 , H03G3/3042 , H03H11/30 , H03K17/6872 , H04B1/40 , Y10T307/406
摘要： Apparatuses and methods for well buffering are disclosed. In one embodiment, an apparatus includes a complimentary metal oxide semiconductor (CMOS) switch having a gate, a drain, a source, and a well. The source and drain are formed in the well, and the gate is formed adjacent the well between the source and drain. The source is configured to receive a bias voltage from a power amplifier. The apparatus further includes a gate bias control block for biasing the gate voltage of the switch, a well bias control block for biasing the well voltage of the switch, and a buffer circuit for increasing the impedance between the well bias control block and the well of the switch.
摘要翻译：公开了用于井缓冲的装置和方法。在一个实施例中，一种装置包括具有栅极，漏极，源极和阱的互补金属氧化物半导体（CMOS）开关。源极和漏极形成在阱中，并且栅极形成在源极和漏极之间的阱附近。该源被配置为从功率放大器接收偏置电压。该装置还包括用于偏置开关的栅极电压的栅极偏置控制块，用于偏置开关的阱电压的阱偏置控制块，以及用于增加井偏压控制块和阱之间的阻抗的缓冲电路开关。

18. 发明申请

US20110298280A1 APPARATUS AND METHOD FOR VARIABLE VOLTAGE DISTRIBUTION 审中-公开
标题翻译：用于可变电压分配的装置和方法
公开(公告)号：US20110298280A1
公开(公告)日：2011-12-08
申请号：US12844638
申请日：2010-07-27
申请人： David K. Homol , Karl J. Couglar , Ryan M. Pratt
发明人： David K. Homol , Karl J. Couglar , Ryan M. Pratt
IPC分类号： H02M3/157
CPC分类号： H03F3/72 , G05F1/468 , G05F1/565 , G05F1/575 , H01L27/0928 , H01L29/0611 , H02M3/1584 , H03F1/0261 , H03F1/34 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/217 , H03F3/245 , H03F2200/18 , H03F2200/411 , H03F2200/451 , H03F2203/21131 , H03F2203/21139 , H03F2203/7215 , H03G3/30 , H03G3/3042 , H03H11/30 , H03K17/6872 , H04B1/40 , Y10T307/406
摘要： Apparatus and methods for providing regulated voltages are disclosed. Using a single voltage regulator, a plurality of regulated voltages can be generated with a voltage distribution function. In addition, variable voltage control elements can be used to adjust a regulated voltage, thereby providing a variable regulated voltage. Together, voltage distribution and variable voltage control can create variable voltage distribution of regulated voltages. These regulated voltages can be used in a variety of applications, for example, as a bias voltage for a power amplifier.
摘要翻译：公开了用于提供调节电压的装置和方法。使用单个电压调节器，可以产生具有电压分布功能的多个调节电压。此外，可变电压控制元件可用于调节调节电压，从而提供可变的调节电压。一起，电压分配和可变电压控制可以产生可调电压的可变电压分布。这些调节电压可用于各种应用中，例如用作功率放大器的偏置电压。

19. 发明授权

US08008970B1 Apparatus and method for enabled switch detection 有权
标题翻译：用于启用开关检测的装置和方法
公开(公告)号：US08008970B1
公开(公告)日：2011-08-30
申请号：US12844511
申请日：2010-07-27
申请人： David K. Homol , Karl J Couglar , Hua Wang , Ryan M Pratt
发明人： David K. Homol , Karl J Couglar , Hua Wang , Ryan M Pratt
IPC分类号： H03F1/14
CPC分类号： H03F3/72 , G05F1/468 , G05F1/565 , G05F1/575 , H01L27/0928 , H01L29/0611 , H02M3/1584 , H03F1/0261 , H03F1/34 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/217 , H03F3/245 , H03F2200/18 , H03F2200/411 , H03F2200/451 , H03F2203/21131 , H03F2203/21139 , H03F2203/7215 , H03G3/30 , H03G3/3042 , H03H11/30 , H03K17/6872 , H04B1/40 , Y10T307/406
摘要： Apparatuses and methods for enabled switch detection are disclosed. In one embodiment, an apparatus includes a complimentary metal oxide semiconductor (CMOS) switch having a gate, a drain, a source, and a well. The source and drain are formed in the well, and the gate is formed adjacent the well between the source and drain. The source is configured to receive a radio frequency signal from a first power amplifier. The apparatus further includes a switch enable detect block configured to compare a signal indicative of the gate voltage of the first switch to a first reference signal and to generate an output comparison signal based at least partly on the comparison. The apparatus further includes a power amplifier bias control block configured to enable the first power amplifier based at least partly on the output comparison signal from the switch sense block.
摘要翻译：公开了用于启用开关检测的装置和方法。在一个实施例中，一种装置包括具有栅极，漏极，源极和阱的互补金属氧化物半导体（CMOS）开关。源极和漏极形成在阱中，并且栅极形成在源极和漏极之间的阱附近。源被配置为从第一功率放大器接收射频信号。该装置还包括开关使能检测块，其被配置为将表示第一开关的栅极电压的信号与第一参考信号进行比较，并且至少部分地基于比较来生成输出比较信号。该装置还包括功率放大器偏置控制块，其被配置为至少部分地基于来自开关感测块的输出比较信号使能第一功率放大器。

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