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11. 发明授权

US08569807B2 Backside illuminated image sensor having capacitor on pixel region 有权
标题翻译：在像素区域上具有电容器的背面照明图像传感器
公开(公告)号：US08569807B2
公开(公告)日：2013-10-29
申请号：US12820656
申请日：2010-06-22
申请人： Chun-Chieh Chuang , Dun-Nian Yuang , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang
发明人： Chun-Chieh Chuang , Dun-Nian Yuang , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L27/148 , H01L31/00
CPC分类号： H01L27/1461 , H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L28/40
摘要： A backside illuminated image sensor includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element.
摘要翻译：背面照明图像传感器包括具有前侧和后侧的半导体衬底，形成在半导体衬底的前侧上的传感器元件和形成在传感器元件上的电容器。

12. 发明申请

US20130020662A1 NOVEL CMOS IMAGE SENSOR STRUCTURE 有权
标题翻译：新型CMOS图像传感器结构
公开(公告)号：US20130020662A1
公开(公告)日：2013-01-24
申请号：US13185204
申请日：2011-07-18
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
IPC分类号： H01L31/02
CPC分类号： H01L27/146 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供其中设置有辐射感测区域的第一基板。该方法包括提供具有氢注入层的第二衬底，氢注入层将第二衬底分成第一部分和第二部分。该方法包括将第二衬底的第一部分接合到第一衬底。该方法包括在接合之后，去除第二衬底的第二部分。该方法包括在去除之后，在第二衬底的第一部分中形成一个或多个微电子器件。该方法包括在第二基板的第一部分上形成互连结构，所述互连结构包含电耦合到微电子器件的互连特征。

13. 发明授权

US08227288B2 Image sensor and method of fabricating same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08227288B2
公开(公告)日：2012-07-24
申请号：US12413752
申请日：2009-03-30
申请人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
发明人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供具有前侧和后侧的装置基板。该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。该方法还包括在器件衬底的背面上形成透明层。该方法还包括在透明层中形成开口，该开口与隔离结构对准。该方法还包括用不透明材料填充开口。

14. 发明申请

US20110298072A1 RIDGE STRUCTURE FOR BACK SIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：背面照明图像传感器的RIDGE结构
公开(公告)号：US20110298072A1
公开(公告)日：2011-12-08
申请号：US12794101
申请日：2010-06-04
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的基板。图像传感器包括设置在基板中的第一和第二放射线检测装置。第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。第一和第二脊各自具有第一折射率值。第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

15. 发明授权

US07927301B2 Safety syringe 有权
标题翻译：安全注射器
公开(公告)号：US07927301B2
公开(公告)日：2011-04-19
申请号：US12418556
申请日：2009-04-03
申请人： Hsi-Hsun Tseng , Chih-Ming Wang , Po-Liang Lee , Chun-Chieh Chuang
发明人： Hsi-Hsun Tseng , Chih-Ming Wang , Po-Liang Lee , Chun-Chieh Chuang
IPC分类号： A61M5/00
CPC分类号： A61M5/3234 , A61M2005/323 , A61M2005/3241 , A61M2005/3242
摘要： A safety syringe includes an outer barrel, a needle unit, an outer barrel plug, an inner barrel, an inner barrel plug, a needle clamper, and a vacuum generating device. The needle unit is disposed within the front end of the outer barrel. The outer barrel plug is disposed within the outer barrel; the outer barrel plug is connected with the needle unit so as to fix the needle unit. The inner barrel plug is disposed within the front end of the inner barrel. The needle clamper is connected with the inner barrel plug. The needle clamper is able to clamp a rear opening of the needle unit. The vacuum generating device is disposed within the inner barrel, and the needle unit can be retracted into the inner barrel by the low pressure which is generated by the vacuum generating device.
摘要翻译：安全注射器包括外筒，针单元，外筒塞，内筒，内筒塞，针夹持器和真空产生装置。针单元设置在外筒的前端内。外桶塞设置在外筒内; 外筒塞与针单元连接，以固定针单元。内筒塞设置在内筒的前端内。针夹持器与内筒塞连接。针夹具能够夹紧针单元的后开口。真空发生装置设置在内筒内，并且针单元可以通过由真空发生装置产生的低压缩回到内筒中。

16. 发明申请

US20100213560A1 PAD DESIGN FOR BACKSIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：背面照明图像传感器的PAD设计
公开(公告)号：US20100213560A1
公开(公告)日：2010-08-26
申请号：US12708167
申请日：2010-02-18
申请人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
发明人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/18
CPC分类号： H01L27/14636 , H01L23/481 , H01L27/14621 , H01L27/1464 , H01L27/14683
摘要： A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.
摘要翻译：半导体图像传感器装置包括第一和第二半导体衬底。像素阵列和控制电路形成在第一基板的第一表面中。在第一基板的第一表面上形成互连层，并将控制电路电连接到像素阵列。顶部导电层形成在互连层上，以经由互连层与至少一个控制电路或像素阵列电连接。第二基板的表面接合到顶部导电层。导电硅通孔（TSV）通过第二衬底，并且与顶部导电层具有电连接性。端子形成在第二基板的相对表面上，并电连接到TSV。

17. 发明申请

US20100184242A1 METHOD OF IMPLANTATION 有权
标题翻译：植入方法
公开(公告)号：US20100184242A1
公开(公告)日：2010-07-22
申请号：US12355211
申请日：2009-01-16
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
IPC分类号： H01L21/76 , H01L31/02 , H01L31/0224
CPC分类号： H01L21/76237 , H01L21/2652 , H01L27/0629 , H01L27/1463 , H01L27/14683
摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.
摘要翻译：提供了将掺杂剂离子注入集成电路的方法。该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口并且通过所述开口植入多个掺杂剂以形成隔离特征。

18. 发明申请

US20100142425A1 TRANSMISSION POWER CONTROL METHOD AND SYSTEM 有权
标题翻译：传动功率控制方法与系统
公开(公告)号：US20100142425A1
公开(公告)日：2010-06-10
申请号：US12411857
申请日：2009-03-26
申请人： JIN-SHYAN LEE , Chun-Chieh Chuang
发明人： JIN-SHYAN LEE , Chun-Chieh Chuang
IPC分类号： G08C17/00
CPC分类号： H04W52/146 , H04W52/322 , H04W52/36 , H04W52/54
摘要： A transmitting power level control method and system are provided, whereby the power of a terminal device in a wireless sensor network is saved and the lifetime thereof is extended. The control method includes the steps of: (A) broadcasting a plurality of transmitting power level (TPL) messages, each of which represents a respective TPL and the respective TPLs are different from one another, wherein each of the plurality of TPL messages is broadcasted at the respective TPL thereof; and (B) setting a TPL for the terminal device at a minimum one of the TPLs represented by the TPL messages received by the terminal device.
摘要翻译：提供了一种发送功率电平控制方法和系统，由此节省了无线传感器网络中的终端设备的功率并延长了其寿命。所述控制方法包括以下步骤：（A）广播多个发送功率电平（TPL）消息，每个发送功率电平（TPL）消息各自表示相应的TPL，并且各个TPL彼此不同，其中广播多个TPL消息中的每一个在其相应的TPL; 和（B）在由终端设备接收的TPL消息表示的TPL中的至少一个TPL下为终端设备设置TPL。

19. 发明授权

US07459371B2 Method for non-volatile memory fabrication 有权
标题翻译：非易失性存储器制造方法
公开(公告)号：US07459371B2
公开(公告)日：2008-12-02
申请号：US11293279
申请日：2005-12-05
申请人： Tseung-Yuen Tseng , Chih-Yi Liu , Chun-Chieh Chuang
发明人： Tseung-Yuen Tseng , Chih-Yi Liu , Chun-Chieh Chuang
IPC分类号： H01L21/20 , H01L21/8242
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is dried and then fired to form a resistor layer of SrZrO3, and a top electrode is formed on the resistor layer.
摘要翻译：提供一种用于非易失性存储器制造的方法，其中提供衬底，在衬底上形成底部电极，在底部电极上涂覆具有Zr和Sr前体的溶液，底部电极表面上的溶液为干燥后烧成SrZrO3的电阻层，在电阻层上形成顶部电极。

20. 发明授权

US09356058B2 Backside structure for BSI image sensor 有权
标题翻译： BSI图像传感器的背面结构
公开(公告)号：US09356058B2
公开(公告)日：2016-05-31
申请号：US13597007
申请日：2012-08-28
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L21/311 , H01L27/146
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685
摘要： An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.
摘要翻译：用于形成图像传感器的实施例方法包括在支撑光电二极管的半导体的表面上形成抗反射涂层，在抗反射涂层上形成蚀刻停止层，在蚀刻停止层上形成缓冲氧化物，并且选择性地去除通过蚀刻的缓冲氧化物的一部分，在蚀刻期间保护抗反射涂层的蚀刻停止层。一种实施方式的图像传感器包括：配置在阵列区域和外围区域中的半导体，支撑阵列区域中的光电二极管的半导体，设置在半导体表面上的抗反射涂层，在阵列区域中的光电二极管上的蚀刻停止层的厚度小于周边区域中的蚀刻停止层的厚度，以及设置在周边区域的蚀刻停止层上的缓冲氧化物。

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