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11. 发明授权

US08728721B2 Methods of processing substrates 有权
标题翻译：处理基板的方法
公开(公告)号：US08728721B2
公开(公告)日：2014-05-20
申请号：US13205004
申请日：2011-08-08
申请人： Scott L. Light , Kaveri Jain , Zishu Zhang , Anton J deVilliers , Dan Millward , Jianming Zhou , Michael D. Hyatt
发明人： Scott L. Light , Kaveri Jain , Zishu Zhang , Anton J deVilliers , Dan Millward , Jianming Zhou , Michael D. Hyatt
IPC分类号： G03F7/20
CPC分类号： G03F7/0035
摘要： A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.
摘要翻译：一种处理衬底的方法包括在衬底上形成第一光致抗蚀剂。第一光致抗蚀剂的一部分选择性地暴露于光化能，然后第一光致抗蚀剂显影为负色调以除去第一光致抗蚀剂的未曝光部分。在显影的第一光致抗蚀剂上的基底上形成第二光致抗蚀剂。第二光致抗蚀剂的一部分选择性地暴露于光化能，然后第二光致抗蚀剂显色以除去第二光致抗蚀剂的未曝光部分，并在包含显影的第一光致抗蚀剂和显影的第二光致抗蚀剂的基板上形成图案。公开了其他实现。

12. 发明授权

US08629048B1 Methods of forming a pattern on a substrate 有权
公开(公告)号：US08629048B1
公开(公告)日：2014-01-14
申请号：US13542913
申请日：2012-07-06
申请人： Vishal Sipani , Anton J. deVilliers
发明人： Vishal Sipani , Anton J. deVilliers
IPC分类号： H01L21/3205
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： A method of forming a pattern on a substrate includes forming longitudinally elongated first lines and first sidewall spacers longitudinally along opposite sides of the first lines elevationally over an underlying substrate. Longitudinally elongated second lines and second sidewall spacers are formed longitudinally along opposite sides of the second lines. The second lines and the second sidewall spacers cross elevationally over the first lines and the first sidewall spacers. The second sidewall spacers are removed from crossing over the first lines. The first and second lines are removed in forming a pattern comprising portions of the first and second sidewall spacers over the underlying substrate. Other methods are disclosed.

13. 发明申请

US20140011364A1 METHODS OF FORMING A PATTERN ON A SUBSTRATE 有权
标题翻译：在基板上形成图案的方法
公开(公告)号：US20140011364A1
公开(公告)日：2014-01-09
申请号：US13542913
申请日：2012-07-06
申请人： Vishal Sipani , Anton J. deVilliers
发明人： Vishal Sipani , Anton J. deVilliers
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： A method of forming a pattern on a substrate includes forming longitudinally elongated first lines and first sidewall spacers longitudinally along opposite sides of the first lines elevationally over an underlying substrate. Longitudinally elongated second lines and second sidewall spacers are formed longitudinally along opposite sides of the second lines. The second lines and the second sidewall spacers cross elevationally over the first lines and the first sidewall spacers. The second sidewall spacers are removed from crossing over the first lines. The first and second lines are removed in forming a pattern comprising portions of the first and second sidewall spacers over the underlying substrate. Other methods are disclosed.
摘要翻译：在衬底上形成图案的方法包括沿纵向延伸的第一线和第一侧壁隔离件纵向地沿着第一线的相对侧纵向地形成在下面的衬底上。纵向细长的第二线和第二侧壁间隔物沿着第二线的相对侧纵向地形成。第二线和第二侧壁间隔物跨越第一线和第一侧壁间隔物横向交叉。第二侧壁隔离物从第一线上的交叉排出。第一和第二线在形成包括第一和第二侧壁隔板的部分的图案的基底上移除。公开了其他方法。

14. 发明授权

US08440371B2 Imaging devices, methods of forming same, and methods of forming semiconductor device structures 有权
标题翻译：成像装置，其形成方法以及形成半导体器件结构的方法
公开(公告)号：US08440371B2
公开(公告)日：2013-05-14
申请号：US12986836
申请日：2011-01-07
申请人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton J. DeVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan B. Millward
发明人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton J. DeVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan B. Millward
IPC分类号： G03F1/36
CPC分类号： G03F1/38 , G03F1/50 , G03F1/54 , Y10T29/49002
摘要： An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.
摘要翻译：一种成像装置，包括至少一个阵列图案区域和至少一个衰减区域。所述至少一个阵列图案区域中的多个成像特征和所述至少一个衰减区域中的多个辅助特征基本上彼此相同，并且基本上形成为间距。还公开了形成成像装置的方法和形成半导体器件结构的方法。

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