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11. 发明申请

US20110248183A1 ULTRAVIOLET REFLECTOR WITH COOLANT GAS HOLES AND METHOD 有权
标题翻译：具有冷却气体的超紫外反射器和方法
公开(公告)号：US20110248183A1
公开(公告)日：2011-10-13
申请号：US13164745
申请日：2011-06-20
申请人： Yao-Hung Yang , Tuan Anh Nguyen , Sanjeev Baluja , Andrzej Kaszuba , Juan Carlos Rocha , Thomas Nowak , Dustin W. Ho
发明人： Yao-Hung Yang , Tuan Anh Nguyen , Sanjeev Baluja , Andrzej Kaszuba , Juan Carlos Rocha , Thomas Nowak , Dustin W. Ho
IPC分类号： B01J19/12 , G02B5/10
CPC分类号： G21K1/062 , B82Y10/00 , G21K2201/064 , G21K2201/065 , G21K2201/067
摘要： A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a centrally positioned longitudinal strip and first and second side reflectors to form a parabolic-type surface. The longitudinal strip and first and second side reflectors have curved reflective surfaces with dichroic coatings and the longitudinal strip comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.
摘要翻译：用于紫外灯的反射器可用于基板处理装置。反射器包括中心定位的纵向条和第一和第二侧反射器以形成抛物线型表面。纵向条和第一和第二侧反射器具有带有二向色涂层的弯曲反射表面，并且纵向条带包括多个通孔以将冷却剂气体引向紫外线灯。还描述了使用具有反射器的紫外线灯模块的室以及紫外线处理方法。

12. 发明申请

US20100263587A1 HIGH THROUGHPUT MULTI-WAFER EPITAXIAL REACTOR 有权
标题翻译：高通量多波长外延反应器
公开(公告)号：US20100263587A1
公开(公告)日：2010-10-21
申请号：US12713116
申请日：2010-02-25
申请人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C30B25/10 , C30B25/08
CPC分类号： C30B25/12 , C30B25/08 , C30B25/105 , C30B35/005
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化腔室壁上的沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

13. 发明申请

US20100096564A1 ULTRAVIOLET REFLECTOR WITH COOLANT GAS HOLES AND METHOD 有权
标题翻译：具有冷却气体的超紫外反射器和方法
公开(公告)号：US20100096564A1
公开(公告)日：2010-04-22
申请号：US12255609
申请日：2008-10-21
申请人： Yao-Hung Yang , Tuan Anh Nguyen , Sanjeev Baluja , Andrzej Kaszuba , Juan Carlos Rocha , Thomas Nowak , Dustin W. Ho
发明人： Yao-Hung Yang , Tuan Anh Nguyen , Sanjeev Baluja , Andrzej Kaszuba , Juan Carlos Rocha , Thomas Nowak , Dustin W. Ho
IPC分类号： G21K1/06 , G21K5/00
CPC分类号： G21K1/062 , B82Y10/00 , G21K2201/064 , G21K2201/065 , G21K2201/067
摘要： A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a longitudinal strip extending the length of the ultraviolet lamp. The longitudinal strip has a curved reflective surface and comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.
摘要翻译：用于紫外灯的反射器可用于基板处理装置。反射器包括延伸紫外灯长度的纵向条。纵向条具有弯曲的反射表面，并且包括多个通孔以将冷却剂气体引向紫外线灯。还描述了使用具有反射器的紫外线灯模块的室以及紫外线处理方法。

14. 发明授权

US07628863B2 Heated gas box for PECVD applications 有权
标题翻译：用于PECVD应用的加热气箱
公开(公告)号：US07628863B2
公开(公告)日：2009-12-08
申请号：US10910269
申请日：2004-08-03
申请人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
发明人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67103
摘要： A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to a substrate processing region. Also, a method for providing heat to a chemical vapor deposition chamber comprising supplying heat to a lid of a gas box, and heating a face plate connected to the gas box by heat transfer from the lid.
摘要翻译：一种用于在处理区域中的用于化学气相沉积在基板上的室的方法和装置，包括具有加热盖的气体箱，所述加热盖包括气体入口通道，以及连接到加热盖的面板，所述面板定位成将来自加热气体箱到基板处理区域。另外，一种向化学气相沉积室提供热量的方法，包括向燃气箱的盖子供给热量，以及通过从盖子的热传递来加热连接到气体箱的面板。

15. 发明申请

US20070107660A9 Heated gas box for PECVD applications 有权
标题翻译：用于PECVD应用的加热气箱
公开(公告)号：US20070107660A9
公开(公告)日：2007-05-17
申请号：US10910269
申请日：2004-08-03
申请人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
发明人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
IPC分类号： C23C16/00
CPC分类号： H01L21/67103
摘要： A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to a substrate processing region. Also, a method for providing heat to a chemical vapor deposition chamber comprising supplying heat to a lid of a gas box, and heating a face plate connected to the gas box by heat transfer from the lid.
摘要翻译：一种用于在处理区域中的用于化学气相沉积在基板上的室的方法和装置，包括具有加热盖的气体箱，所述加热盖包括气体入口通道，以及连接到加热盖的面板，所述面板定位成将来自加热气体箱到基板处理区域。另外，一种向化学气相沉积室提供热量的方法，包括向燃气箱的盖子供给热量，以及通过从盖子的热传递来加热连接到气体箱的面板。

16. 发明授权

US08298629B2 High throughput multi-wafer epitaxial reactor 有权
标题翻译：高通量多晶圆外延反应堆
公开(公告)号：US08298629B2
公开(公告)日：2012-10-30
申请号：US12392448
申请日：2009-02-25
申请人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C23C8/00 , C23C16/00
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/455 , C23C16/4582 , C23C16/46 , C23C16/463 , C23C16/54 , C30B25/105 , C30B25/12 , C30B29/06
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化壁沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

17. 发明授权

US07964858B2 Ultraviolet reflector with coolant gas holes and method 有权
标题翻译：具有冷却剂气孔的紫外线反射器及方法
公开(公告)号：US07964858B2
公开(公告)日：2011-06-21
申请号：US12255609
申请日：2008-10-21
申请人： Yao-Hung Yang , Tuan Anh Nguyen , Sanjeev Baluja , Andrzej Kaszuba , Juan Carlos Rocha , Thomas Nowak , Dustin W. Ho
发明人： Yao-Hung Yang , Tuan Anh Nguyen , Sanjeev Baluja , Andrzej Kaszuba , Juan Carlos Rocha , Thomas Nowak , Dustin W. Ho
IPC分类号： G01N21/33 , B01J19/08 , B29C35/08
CPC分类号： G21K1/062 , B82Y10/00 , G21K2201/064 , G21K2201/065 , G21K2201/067
摘要： A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a longitudinal strip extending the length of the ultraviolet lamp. The longitudinal strip has a curved reflective surface and comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.
摘要翻译：用于紫外灯的反射器可用于基板处理装置。反射器包括延伸紫外灯长度的纵向条。纵向条具有弯曲的反射表面，并且包括多个通孔以将冷却剂气体引向紫外线灯。还描述了使用具有反射器的紫外线灯模块的室以及紫外线处理方法。

18. 发明授权

US07663121B2 High efficiency UV curing system 有权
标题翻译：高效UV固化系统
公开(公告)号：US07663121B2
公开(公告)日：2010-02-16
申请号：US11424368
申请日：2006-06-15
申请人： Thomas Nowak , Juan Carlos Rocha-Alvarez , Andrzej Kaszuba , Scott A. Hendrickson , Dustin W. Ho , Sanjeev Baluja , Tom Cho , Josephine Chang , Hichem M'Saad
发明人： Thomas Nowak , Juan Carlos Rocha-Alvarez , Andrzej Kaszuba , Scott A. Hendrickson , Dustin W. Ho , Sanjeev Baluja , Tom Cho , Josephine Chang , Hichem M'Saad
IPC分类号： G01N23/00
CPC分类号： B05D3/067 , B05D3/0209 , B05D3/0493 , H01L21/31058
摘要： An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.
摘要翻译：紫外线（UV）固化室可固化设置在基底上的电介质材料并进行原位清洁。串联处理室提供由覆盖有盖的主体限定的两个单独的和相邻的过程区域，所述盖子具有分别位于每个处理区域上方的窗口。每个处理区域的一个或多个UV灯泡被耦合到盖的壳体覆盖，将通过窗口的UV光发射到位于处理区域内的衬底上。 UV灯泡可以是利用诸如微波或射频的源的发光二极管或灯泡阵列。紫外光可以在固化过程中被脉冲。使用远程生成的氧自由基/臭氧和/或原位实现清洁室。灯阵列的使用，基板和灯头的相对运动以及灯反射器形状和/或位置的实时修改可以增强基板照明的均匀性。

19. 发明授权

US07554103B2 Increased tool utilization/reduction in MWBC for UV curing chamber 有权
标题翻译：增加UV固化室的MWBC工具利用/减少
公开(公告)号：US07554103B2
公开(公告)日：2009-06-30
申请号：US11562043
申请日：2006-11-21
申请人： Juan Carlos Rocha-Alvarez , Thomas Nowak , Sanjeev Baluja , Andrzej Kaszuba , Ndanka O. Mukuti
发明人： Juan Carlos Rocha-Alvarez , Thomas Nowak , Sanjeev Baluja , Andrzej Kaszuba , Ndanka O. Mukuti
IPC分类号： G21G1/00
CPC分类号： F27B17/0025 , H01L21/67115
摘要： A pump liner is used to direct a laminar flow of purge gas across a workpiece to remove contaminants or species outgassed or otherwise produced by the workpiece during processing. The pump liner can take the form of a ring having a plurality of injection ports, such as slits of a variety of shapes and/or sizes, opposite a plurality of receiving ports in order to provide the laminar flow. The flow of purge gas is sufficient to carry a contaminant or outgassed species from the processing chamber in order to prevent the collection of the contaminants on components of the chamber. The pump liner can be heated, via conduction and irradiation from a radiation source, for example, in order to prevent the condensation of species on the liner. The pump liner also can be anodized or otherwise processed in order to increase the emissivity of the liner.
摘要翻译：泵衬套用于引导吹扫气体的层流穿过工件以去除在加工过程中由工件脱气或以其它方式产生的污染物或物质。泵衬套可以采取具有多个注入口的环的形式，例如与多个接收端口相对的各种形状和/或尺寸的狭缝，以提供层流。吹扫气体的流动足以承载来自处理室的污染物或去气物质，以便防止在室的部件上收集污染物。可以通过例如辐射源的传导和辐射来加热泵衬垫，以防止物质在衬套上的冷凝。泵衬垫也可以被阳极化处理或以其它方式加工，以便增加衬套的发射率。

20. 发明申请

US20060251827A1 TANDEM UV CHAMBER FOR CURING DIELECTRIC MATERIALS 审中-公开
标题翻译：用于固化电介质的TANDEM紫外线灯
公开(公告)号：US20060251827A1
公开(公告)日：2006-11-09
申请号：US11124908
申请日：2005-05-09
申请人： Thomas Nowak , Juan Rocha-Alvarez , Andrzej Kaszuba , Scott Hendrickson , Dustin Ho , Sanjeev Baluja , Tom Cho , Josephine Chang , Hichem M'Saad
发明人： Thomas Nowak , Juan Rocha-Alvarez , Andrzej Kaszuba , Scott Hendrickson , Dustin Ho , Sanjeev Baluja , Tom Cho , Josephine Chang , Hichem M'Saad
IPC分类号： B05D3/06 , B05B5/00
CPC分类号： B05D3/067 , B05D3/0209 , B05D3/0493 , H01L21/31058
摘要： An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.
摘要翻译：紫外线（UV）固化室可固化设置在基底上的电介质材料并进行原位清洁。串联处理室提供由覆盖有盖的主体限定的两个单独的和相邻的过程区域，所述盖子具有分别位于每个处理区域上方的窗口。每个处理区域的一个或多个UV灯泡被耦合到盖的壳体覆盖，将通过窗口的UV光发射到位于处理区域内的衬底上。 UV灯泡可以是利用诸如微波或射频的源的发光二极管或灯泡阵列。紫外光可以在固化过程中被脉冲。使用远程生成的氧自由基/臭氧和/或原位实现清洁室。灯阵列的使用，基板和灯头的相对运动以及灯反射器形状和/或位置的实时修改可以增强基板照明的均匀性。

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