专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US10964599B2 Multi-step insulator formation in trenches to avoid seams in insulators 有权
公开(公告)号：US10964599B2
公开(公告)日：2021-03-30
申请号：US16529162
申请日：2019-08-01
申请人： GLOBALFOUNDRIES U.S. Inc.
发明人： Asli Sirman , Jiehui Shu , Chih-Chiang Chang , Huy Cao , Haigou Huang , Jinping Liu
IPC分类号： H01L21/00 , H01L21/8234 , H01L27/088 , H01L21/762 , H01L29/66 , H01L29/78
摘要： Methods produce integrated circuit structures that include (among other components) fins extending from a first layer, source/drain structures on the fins, source/drain contacts on the source/drain structures, an insulator on the source/drain contacts defining trenches between the source/drain contacts, gate conductors in a lower portion of the trenches adjacent the fins, a first liner material lining a middle portion and an upper portion of the trenches, a fill material in the middle portion of the trenches, and a second material in the upper portion of the trenches. The first liner material is on the gate conductors in the trenches.

12. 发明授权

US10822750B2 Resilient deck structure 有权
公开(公告)号：US10822750B2
公开(公告)日：2020-11-03
申请号：US16516306
申请日：2019-07-19
申请人： Edward H. Easter
发明人： Edward H. Easter
IPC分类号： E01C13/04 , E04B5/10 , E01C13/02 , A63B69/00 , A63B102/08
摘要： According to a resilient platform assembly, a playing deck includes a plurality of horizontally disposed deck panels. Each deck panel of the plurality of horizontally disposed deck panels has a pair of foot flanges on the bottom of the deck panels. Receiving shoes are attached to the deck panels. The receiving shoes are configured to receive the foot flanges of the deck panels. A transverse member is perpendicular to the plurality of horizontally disposed deck panels. The transverse member includes a plurality of notches. Each notch of the plurality of notches is cut in the transverse member in a predetermined spacing pattern. The receiving shoes are installed in the notches and the deck panels are attached to the transverse member through the receiving shoes. Resilient mounts connect the transverse member to a support assembly and allow relative motion between the transverse member and the support assembly.

13. 发明授权

US10821731B2 Cap and evaporative devices stabilizing ink in nozzles of inkjet printheads 有权
公开(公告)号：US10821731B2
公开(公告)日：2020-11-03
申请号：US16272086
申请日：2019-02-11
申请人： Xerox Corporation
发明人： Paul J. McConville , Jason M. LeFevre , Michael J. Levy , Seemit Praharaj , Chu-heng Liu , David A. VanKouwenberg , Linn C. Hoover , Douglas K. Herrmann
IPC分类号： B41J2/165 , B41J2/21
摘要： A cap is positioned to contact a printhead when the printhead is not ejecting liquid ink. The cap and the printhead create a sealed space adjacent printhead nozzles when contacting each other. A heated evaporator is connected to the cap and is adapted to evaporate an ink-compatible liquid to form a water and/or solvent vapor and supply the water and/or solvent vapor to the sealed space to protect the liquid ink in the nozzles. An insulator thermally insulates the heated evaporator from the printhead. This prevents the ink in the nozzles from drying and prevents the nozzles from clogging.

14. 发明授权

US10814631B2 Inkjet printhead cap having rotatable panels 有权
公开(公告)号：US10814631B2
公开(公告)日：2020-10-27
申请号：US16272094
申请日：2019-02-11
申请人： Xerox Corporation
发明人： Linn C. Hoover , Jason M. LeFevre , Douglas K. Herrmann , Chu-heng Liu , Paul J. McConville , David A. VanKouwenberg , Seemit Praharaj , Michael J. Levy
IPC分类号： B41J2/165
摘要： Ink stabilizing material is applied to rotatable panels within a cap of an inkjet cartridge resting structure. The rotatable panels then rotate to contact an inkjet printhead when the printhead contacts the cap. Continuous periodic flushing of the printhead is performed while the rotatable panels are contacting the printhead by periodically and repeatedly alternating between ejecting a mixture of the ink stabilizing material and ink from the nozzles, and drawing the mixture of the ink stabilizing material and the ink back into the nozzles.

15. 发明授权

US10807765B2 Multi-compartment roll-up container and cap 有权
公开(公告)号：US10807765B2
公开(公告)日：2020-10-20
申请号：US15950214
申请日：2018-04-11
申请人： Hirshol H. Pheir
发明人： Hirshol H. Pheir
IPC分类号： B65D21/02 , B65D41/04
摘要： Container/cap structures include pie-piece shaped individual containers shaped to fit together, and pie-piece shaped individual caps that are attachable to each of the individual containers. Each of the individual containers is connected to at least one of the other container by connections, and these connections between the individual containers permit the individual containers to be rolled together to form a complete multi-compartment container. Each of the individual caps includes a projection and a recess positioned to join corresponding projections and recesses of adjacent individual caps. The projection and recess of the individual caps connect the individual caps together to form a complete cap when the individual containers are rolled together. The complete cap is capable of being unscrewed from the complete container to simultaneously separate all of the individual caps that form the complete cap from all of the individual containers that form the complete multi-compartment container.

16. 发明授权

US10800174B2 Evaporative ink-blocking film devices stabilizing ink in nozzles of inkjet printheads 有权
公开(公告)号：US10800174B2
公开(公告)日：2020-10-13
申请号：US16272074
申请日：2019-02-11
申请人： Xerox Corporation
发明人： Chu-heng Liu , Paul J. McConville , Douglas K. Herrmann , Jason M. LeFevre , Seemit Praharaj , Michael J. Levy , David A. VanKouwenberg , Linn C. Hoover
IPC分类号： B41J2/165 , B41J2/21 , B41J2/01
摘要： A cap is positioned to contact a printhead when the printhead is not ejecting liquid ink. The cap and the printhead create a sealed space adjacent printhead nozzles when contacting each other. An evaporator is connected to the cap and is adapted to control evaporation a water-incompatible or solvent-incompatible liquid into the sealed space to condense an ink-blocking film on the surface of the liquid ink in the nozzles to protect the liquid ink in the nozzles. This prevents the ink in the nozzles from drying and prevents the nozzles from clogging.

17. 发明授权

US10692991B2 Gate-all-around field effect transistors with air-gap inner spacers and methods 有权
公开(公告)号：US10692991B2
公开(公告)日：2020-06-23
申请号：US16123160
申请日：2018-09-06
申请人： GLOBALFOUNDRIES INC.
发明人： Daniel Chanemougame , Julien Frougier , Ruilong Xie
IPC分类号： H01L29/66 , H01L29/78 , H01L29/06 , H01L29/423 , H01L21/311 , H01L21/3065
摘要： Disclosed are structures including a gate-all-around field effect transistor (GAAFET) with air-gap inner spacers. The GAAFET includes a stack of nanoshapes that extend laterally between source/drain regions, a gate that wraps around a center portion of each nanoshape, and a gate sidewall spacer on external sidewalls of the gate. The GAAFET also includes air-gap inner spacers between the gate and the source/drain regions. Each air-gap inner spacer includes: two vertical sections within the gate sidewall spacer on opposing sides of the stack and adjacent to a source/drain region; and horizontal sections below the nanoshapes and extending laterally between the vertical sections. Also discloses are methods of forming the structures and the method include forming preliminary inner spacers in inner spacer cavities prior to source/drain region formation. After source/drain regions are formed, the preliminary inner spacers are removed and the cavities are sealed off, thereby forming the air-gap inner spacers.

18. 发明授权

US10681226B2 Skipped-pitch compensating printing/finishing system 有权
公开(公告)号：US10681226B2
公开(公告)日：2020-06-09
申请号：US16104968
申请日：2018-08-20
申请人： Xerox Corporation
发明人： Hans F. Case , Kevin J. St. Martin , Douglas K. Herrmann
IPC分类号： H04N1/00
摘要： A print job received by a printing system has subsets of items. Multiple items are printed on each sheet. Finishing devices of the printing system are limited to processing a single subset of the items at a time, causing printing devices to wait skipped-pitch delays. An unadjusted number of machine-hours to complete the print job is determined based on continuous printing without interruption. A skipped-pitch delay is assigned to each of the subsets of items based on the number of sheets used to print each of the subsets of items. A revised number of machine-hours to complete the print job is calculated by adding the total skipped-pitch delay for the print job to the unadjusted number of machine-hours. The number of the printing devices and the finishing devices to use to complete the print job is determined based on the revised number of machine-hours.

19. 发明授权

US10644157B2 Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methods 有权
公开(公告)号：US10644157B2
公开(公告)日：2020-05-05
申请号：US16049849
申请日：2018-07-31
申请人： GLOBALFOUNDRIES INC.
发明人： Julien Frougier , Ruilong Xie , Andreas Knorr , Srikanth Balaji Samavedam
IPC分类号： H01L29/16 , H01L29/78 , H01L29/66 , H01L29/06 , H01L21/762 , H01L29/10 , H01L21/8238 , H01L29/08
CPC分类号： H01L29/785 , H01L21/76283 , H01L21/823821 , H01L21/823864 , H01L29/0649 , H01L29/0847 , H01L29/1033 , H01L29/66545 , H01L29/66795
摘要： Disclosed are methods of forming a semiconductor structure including a bulk semiconductor substrate and, on the substrate, a fin-type field effect transistor (FINFET) with a uniform channel length and a below-channel buried insulator. In the methods, a semiconductor fin is formed with a sacrificial semiconductor layer between lower and upper semiconductor layers. During processing, the sacrificial semiconductor layer is replaced with dielectric spacer material (i.e., a buried insulator). The buried insulator functions as an etch stop layer when etching source/drain recesses, ensuring that they have vertical sidewalls and, thereby ensuring that the channel region has a uniform length. The buried insulator also provides isolation between channel region and the substrate below and prevents dopant diffusion into the channel region from a punch-through stopper (if present). Optionally, the buried insulator is formed so as to contain an air-gap. Also disclosed are structures resulting from the methods.

20. 发明授权

US10580897B2 Methods of forming a bulk field effect transistor (FET) with sub-source/drain isolation layers and the resulting structures 有权
公开(公告)号：US10580897B2
公开(公告)日：2020-03-03
申请号：US16046368
申请日：2018-07-26
申请人： GLOBALFOUNDRIES INC.
发明人： Bartlomiej J. Pawlak
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66 , H01L29/423 , H01L29/10 , H01L29/775 , H01L29/786 , B82Y10/00 , H01L29/165
摘要： Disclosed are structures (e.g., a fin-type field effect transistor (FINFET) and a nanowire-type FET (NWFET)) and methods of forming the structures. In the methods, a fin is formed. For a FINFET, the fin includes a first semiconductor material. For an NWFET, the fin includes alternating layers of first and second semiconductor materials. A gate is formed on the fin. Recesses are formed in the fin adjacent to the gate and extend to (or into) a semiconductor layer, below, made of the second semiconductor material. An oxidation process forms oxide layers on exposed semiconductor surfaces in the recesses including a first oxide material on the first semiconductor material and a second oxide material on the second semiconductor material. The first oxide material is then selectively removed and source/drain regions are formed by lateral epitaxial deposition in the recesses. The remaining second oxide material minimizes sub-channel region source-to-drain leakage.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式