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    • 183. 发明授权
    • Beam irradiation device
    • 光束照射装置
    • US08345268B2
    • 2013-01-01
    • US12907828
    • 2010-10-19
    • Atsushi YamaguchiYoshiaki MaenoHiroyuki Mutou
    • Atsushi YamaguchiYoshiaki MaenoHiroyuki Mutou
    • G01B11/14
    • G01B11/026G01S7/4814G01S7/497G01S17/42
    • A beam irradiation device includes a photodetector which receives servo light and outputs a detection signal depending on a light receiving position of the servo light, and a signal processing section which obtains the light receiving position based on the detection signal. In the above arrangement, the signal processing section has an A/D conversion circuit which converts the detection signal into a digital signal, and an error signal adjusting circuit which converts an error component signal to be outputted from the photodetector when the photodetector is not irradiated by the servo light, into a signal within a processable range of the A/D conversion circuit, and supplies the converted signal to the A/D conversion circuit. A first digital signal derived from the detection signal is corrected with a second digital signal derived from the error component signal.
    • 光束照射装置包括:光电检测器,其接收伺服光并根据伺服光的光接收位置输出检测信号;以及信号处理部,其基于检测信号获得光接收位置。 在上述结构中,信号处理部分具有将检测信号转换为数字信号的A / D转换电路和误差信号调节电路,当光电检测器未被照射时,将误差分量信号转换成从光电检测器输出的误差分量信号 通过伺服光进入A / D转换电路的可处理范围内的信号,并将转换的信号提供给A / D转换电路。 从检测信号导出的第一数字信号用从误差分量信号导出的第二数字信号来校正。
    • 186. 发明授权
    • Semiconductor light emitting device with concave-convex pattern and method for manufacturing the same
    • 具有凹凸图案的半导体发光器件及其制造方法
    • US08304795B2
    • 2012-11-06
    • US12087173
    • 2006-12-28
    • Atsushi YamaguchiKen Nakahara
    • Atsushi YamaguchiKen Nakahara
    • H01L33/00
    • H01L33/42H01L33/20H01L33/44H01L2933/0083
    • A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion. Light emitted from the light emitting layer is therefore totally reflected repeatedly in the semiconductor lamination portion and the substrate and can be effectively taken out without attenuation, so external quantum efficiency can be improved.
    • 通过在衬底(1)的一侧层叠包括n型层(3)和p型层(5)的氮化物半导体层以形成发光层,形成半导体层叠部(6) 并且在半导体层叠部的表面侧设置有透光性导电层(7)。 在透光导电层的表面上设置凹凸图案,即凹部(7a)。 p侧电极(8)设置在透光导电层上,n侧电极(9)与通过蚀刻半导体层叠部分的一部分露出的n型层电连接。 因此,从半导体层叠部和基板反射全反射从发光层发出的光,能够有效地取出而不衰减,能够提高外部的量子效率。