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    • 141. 发明申请
    • MANIPULATOR
    • 操纵器
    • US20060229666A1
    • 2006-10-12
    • US11278786
    • 2006-04-05
    • Takashi SuzukiKazuo NakazawaYasuhide MorikawaMasaki Kitajima
    • Takashi SuzukiKazuo NakazawaYasuhide MorikawaMasaki Kitajima
    • A61B17/00
    • A61B17/29A61B17/28A61B2017/2902A61B2017/2927A61B2017/2939
    • There is provided a manipulator simplified in maintenance and operation thereof, the manipulator having the freedom of two-degree-of-freedom of rotation and gripping, and being capable of ensuring force feedback or force sensation with excellent operationability. A link mechanism 3 is provided between an operating part 1 and a working part 2. The link mechanism 3 comprises four driving rods 3a to 3d and first and second coupling members of the same structure, 41, 42 provided at opposite ends of the driving rods. First and second working members 2a, 2b move correspondingly to operations of first and second operating members 1a, 1b with the aid of the link mechanism 3. For example, provided that the first and second operating members 1a, 1b might be opened and closed, the first and second working members 2a, 2b might be opened and closed (gripping). And also, provided that the first and second operating members 1a, 1b are changed in their yaw angles, the working members 2a, 2b are also correspondingly changed in their yaw angle. Similarly, once the first and second operating members 1a, 1b are changed in their pitch angles, the working members 2a, 2b might be also correspondingly changed in their pitch angles.
    • 提供了简化维护和操作的操纵器,操纵器具有两自由度的旋转和夹紧的自由度,并且能够确保具有优异的可操作性的力反馈或力感觉。 连杆机构3设置在操作部件1和工作部件2之间。连杆机构3包括四个驱动杆3a至3d,以及设置在相对端部的相同结构的第一和第二连接部件41,42 驱动杆。 借助于连杆机构3,第一和第二工作构件2a,2b对应于第一和第二操作构件1a,1b的操作而移动。例如,如果第一和第二操作构件1a,1b 可以打开和关闭,第一和第二工作构件2a,2b可以被打开和关闭(夹紧)。 而且,如果第一和第二操作构件1a,1b在其偏航角度上改变,则工作构件2a,2b也在其偏航角度上相应地改变。 类似地,一旦第一和第二操作构件1a,1b以它们的俯仰角度改变,则工作构件2a,2b也可以在它们的俯仰角度上相应地改变。
    • 144. 发明授权
    • Light emitting element driving circuit with current mirror circuit
    • 具有电流镜电路的发光元件驱动电路
    • US07075338B2
    • 2006-07-11
    • US10821272
    • 2004-04-09
    • Seiichiro MizunoTakashi SuzukiTetsuya Taka
    • Seiichiro MizunoTakashi SuzukiTetsuya Taka
    • H03K5/22H01S3/30G09G3/32
    • H01S5/042H01S5/0428
    • A light emitting element driving circuit for supplying driving current I2 to a light emitting element 10 connected to one line 2 of a current mirror circuit 12 is equipped with a pulse generating circuit 20 connected to the other line 1 so that pulse current flows therethrough, and superposing means 30 for superposing a first auxiliary pulse current on the pulse current in synchronization with the rise-up time of the pulse current. The rise-up time is shortened by the superposition. In the driving circuit, a source follower circuit is connected to the current mirror circuit, and current flowing through the source follower circuit is set to be substantially proportional to current flowing through the other line of the current mirror circuit.
    • 用于向与电流镜电路12的一条线2连接的发光元件10提供驱动电流I2的发光元件驱动电路配备有连接到另一条线1的脉冲发生电路20,使得脉冲电流流过其中, 用于与脉冲电流的上升时间同步地将脉冲电流上的第一辅助脉冲电流叠加的叠加装置30。 叠加时间缩短。 在驱动电路中,源极跟随器电路连接到电流镜电路,并且流过源极跟随器电路的电流被设置为与流过电流镜电路的另一条线的电流成比例。
    • 147. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07045417B2
    • 2006-05-16
    • US11061531
    • 2005-02-22
    • Yoshio KasaiMiki KawaseTakashi SuzukiMotoya Kishida
    • Yoshio KasaiMiki KawaseTakashi SuzukiMotoya Kishida
    • H01L21/8242
    • H01L27/10829H01L27/10867
    • A method of manufacturing a semiconductor device, which comprises forming a first semiconductor film on a surface of a semiconductor substrate, adsorbing a first impurity on a surface of the first semiconductor film, adsorbing a second impurity on the surface of the first semiconductor film, forming a second semiconductor film on the surface of the first semiconductor film, and solid-phase-diffusing the first impurity and the second impurity into a region of the semiconductor substrate which is located adjacent to the first and second semiconductor films to thereby form a first diffusion region containing the first impurity and a second diffusion region containing the second impurity, a concentration of the first impurity in the first diffusion region being higher than that of the second impurity in the second diffusion region, and the first diffusion region having the bottom thereof covered by the second diffusion region.
    • 一种制造半导体器件的方法,包括在半导体衬底的表面上形成第一半导体膜,在第一半导体膜的表面上吸附第一杂质,在第一半导体膜的表面上吸附第二杂质,形成 在所述第一半导体膜的表面上的第二半导体膜,并且将所述第一杂质和所述第二杂质固相扩散到所述半导体衬底的与所述第一和第二半导体膜相邻的区域中,从而形成第一扩散 含有第一杂质的区域和含有第二杂质的第二扩散区域,第一扩散区域中的第一杂质的浓度高于第二扩散区域中的第二杂质浓度,第一扩散区域的底部被覆盖 通过第二扩散区域。