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    • 145. 发明申请
    • REGULATOR VALVE
    • 调节阀
    • US20100327206A1
    • 2010-12-30
    • US12597646
    • 2008-04-25
    • Akiko NishimineShinichi ItoKenichi Tsuchida
    • Akiko NishimineShinichi ItoKenichi Tsuchida
    • F16K1/00
    • F16H61/0276F16H61/0021F16H2061/0253F16K11/07F16K31/122G05D16/14Y10T137/2564Y10T137/2652Y10T137/2665Y10T137/8663Y10T137/8671
    • A regulator valve is structured such that hydraulic pressure to be output from a regulated pressure output port is regulated according to urging forces, i.e., line pressure to be regulated, throttle pressure, spring force from a compression coil spring, and operating force from a plunger, which are applied to a valve spool. The plunger has a small diameter portion and a large diameter portion having a diameter larger than the diameter of the small diameter portion, both of which are axially displaceably retained in a spring receiving sleeve. The small diameter portion is urged in one axial direction at one end of the plunger that protrudes into a spring chamber and faces the valve spool, while the large diameter portion is urged in the other axial direction by range pressure at the other end of the plunger which is isolated from the small diameter portion located in the spring chamber.
    • 调节阀被构造成使得从调节压力输出端口输出的液压根据作用力调节,即被调节的管路压力,节流阀压力,来自压缩螺旋弹簧的弹簧力,以及来自柱塞的操作力 ,其被施加到阀芯。 柱塞具有小直径部分和大直径部分,其直径大于小直径部分的直径,两者均轴向移位地保持在弹簧接收套筒中。 小直径部分在柱塞的一端沿一个轴向方向被推压到弹簧室中并面向阀芯,而大直径部分在另一个轴向方向上被推压在柱塞另一端的范围压力 其与位于弹簧室中的小直径部分隔离。
    • 146. 发明授权
    • Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
    • 平版印刷设备,形成图案的方法和制造半导体器件的方法
    • US07796237B2
    • 2010-09-14
    • US12341179
    • 2008-12-22
    • Shinichi ItoTsuyoshi Shibata
    • Shinichi ItoTsuyoshi Shibata
    • G03B27/52G03B27/42G03B27/32G03D5/00
    • G03F7/70991G03F7/70341G03F7/70858G03F7/70916G03F7/70925
    • A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.
    • 光刻设备包括:抗蚀剂处理设备,用于执行在基板上施加抗蚀剂的工艺;加热基板上的抗蚀剂膜的工艺;以及在基板上显影抗蚀剂膜的工艺;浸渍曝光设备,包括:投影 光学系统,其将光掩模上的图案的图像投影到抗蚀剂膜上,并且被配置为通过位于投影光学系统和抗蚀剂膜之间的光路上的液体进行曝光,连接到抗蚀剂处理和浸没曝光装置的传送装置 在抗蚀剂处理和浸没曝光装置之间执行基板的传送,以及温度/湿度控制装置,其被配置为基于温度和湿度控制至少一个抗蚀剂处理和输送装置中的温度和湿度, 湿度浸渍曝光设备。
    • 148. 发明授权
    • Pattern forming method and method for manufacturing a semiconductor device
    • 图案形成方法和制造半导体器件的方法
    • US07527918B2
    • 2009-05-05
    • US10992349
    • 2004-11-19
    • Takehiro KondohEishi ShiobaraTomoyuki TakeishiKenji ChibaShinichi Ito
    • Takehiro KondohEishi ShiobaraTomoyuki TakeishiKenji ChibaShinichi Ito
    • G03F7/00
    • G03F7/40G03F7/405
    • A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
    • 图案形成方法包括在基板上形成第一抗蚀剂图案,在第一抗蚀剂图案上照射光,在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案,形成第二抗蚀剂图案, 通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层,并且对第一抗蚀剂图案照射光,包括设定照射在第一抗蚀剂图案上的光量,使得 基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量,第二抗蚀剂图案的尺寸为预定尺寸 模式。
    • 149. 发明授权
    • Liquid film forming method and solid film forming method
    • 液膜成膜法和固体成膜法
    • US07371434B2
    • 2008-05-13
    • US10202657
    • 2002-07-25
    • Shinichi Ito
    • Shinichi Ito
    • B05D1/02
    • G03F7/162
    • A method of forming a liquid film characterized by dropping a liquid on a substrate from a dropping unit while rotating the substrate, moving the dropping unit in the radial direction from the inner periphery of the substrate to the outer periphery of the substrate so that the move pitch of the dropping unit in the radial direction occurring in every revolution of the substrate may change slightly, and forming a liquid film on the substrate by adjusting the feed speed of the liquid to the substrate from the dropping unit, while lowering the rotational frequency of the substrate gradually, so that the liquid on the substrate may not move due to centrifugal force by rotation of the substrate, along with the move of the dropping unit in the radial direction of the substrate.
    • 一种形成液膜的方法,其特征在于在旋转基板的同时从滴液单元将液体滴落到基板上,使滴下单元从基板的内周沿径向移动到基板的外周,使得移动 在基板的每一转中发生的放射单元的间距可能稍微变化,并且通过从下降单元调节液体对基板的进给速度而在基板上形成液膜,同时降低 使基板的液体随着基板的旋转的离心力而不会随着基板的径向移动而不能移动。