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    • 146. 发明授权
    • Apparatus and method for coding moving pictures
    • 用于编码运动图像的装置和方法
    • US08761264B2
    • 2014-06-24
    • US11497288
    • 2006-08-02
    • Satoshi ShimadaAkira NakagawaHidetoshi MatsumuraYasuhiro WatanabeAkihiro Yamori
    • Satoshi ShimadaAkira NakagawaHidetoshi MatsumuraYasuhiro WatanabeAkihiro Yamori
    • H04N7/12
    • H04N19/136H04N19/103H04N19/122H04N19/129H04N19/132
    • The apparatus includes: orthogonal transforming means for orthogonally transforming an input video signal for each element block, quantizing means for quantizing each obtained transformation coefficient using a quantization parameter; coding means for coding the quantization parameter; decoded picture generating means for generating a reference picture signal for a motion compensation prediction from the quantized results of the quantizing means; filtering means for filtering the obtained reference picture signal at a strength corresponding to the quantization parameter when a non-zero effective transformation coefficient is present with respect to the element block; and controlling means for controlling at least anyone of transformation coefficients to be not zero, when all of the transformation coefficients are zero. This allows, even when all of the quantized results of the transformation coefficients of the element blocks are zero, coding of quantization parameter of current element block and control of filtering strength.
    • 该装置包括:正交变换装置,用于对每个元素块的输入视频信号进行正交变换;量化装置,用于使用量化参数量化每个获得的变换系数; 用于编码量化参数的编码装置; 解码图像生成装置,用于从量化装置的量化结果生成用于运动补偿预测的参考图像信号; 滤波装置,用于当相对于所述元素块存在非零有效变换系数时,以与所述量化参数对应的强度对所获得的参考图像信号进行滤波; 以及控制装置,用于当所有变换系数为零时,将变换系数中的至少任一个控制为不为零。 这允许即使当元素块的变换系数的所有量化结果为零时,当前元素块的量化参数的编码和滤波强度的控制。
    • 147. 发明授权
    • Plasma etching method and computer-readable storage medium
    • 等离子体蚀刻方法和计算机可读存储介质
    • US08679358B2
    • 2014-03-25
    • US13410432
    • 2012-03-02
    • Akira Nakagawa
    • Akira Nakagawa
    • B44C1/22
    • H01L21/31116H01L21/31144
    • A plasma etching method includes a preparation process for performing a plasma etching process using a processing gas including a first processing gas containing carbon (C) and fluorine (F), a ratio (C/F) of the first processing gas having a first value, and obtaining a residual amount of the mask layer corresponding to a variation point where a variation amount of the bowing CD is increased; a first plasma etching process using the processing gas including the first processing gas until a residual amount of the mask layer reaches the variation point; and a second plasma etching process performed after the first plasma etching process. The second plasma etching process is performed by using a processing gas including at least a second processing gas containing carbon (C) and fluorine (F), and a ratio (C/F) of the second processing gas is smaller than the first value.
    • 等离子体蚀刻方法包括使用包含含有碳(C)和氟(F)的第一处理气体的处理气体进行等离子体蚀刻处理的准备工序,第一处理气体的比率(C / F) 并且获得与弯曲CD的变化量增加的变化点对应的掩模层的残留量; 使用包括第一处理气体的处理气体直到掩模层的残留量达到变化点的第一等离子体蚀刻工艺; 以及在第一等离子体蚀刻工艺之后执行的第二等离子体蚀刻工艺。 通过使用至少包含碳(C)和氟(F)的第二处理气体的处理气体,第二处理气体的比(C / F)小于第一等级蚀刻工艺。
    • 148. 发明授权
    • Substrate processing method
    • 基板加工方法
    • US08569176B2
    • 2013-10-29
    • US13069733
    • 2011-03-23
    • Akira NakagawaYusuke OkazakiYoshinobu Hayakawa
    • Akira NakagawaYusuke OkazakiYoshinobu Hayakawa
    • H01L21/302H01L21/461
    • H01L21/31144H01J37/32091H01J37/32165H01L21/31116H01L21/31122H01L21/31138
    • Disclosed is a substrate processing method configured to prevent the occurrence of a bowing shape to form a hole of a vertical processing shape on a mask layer, and to secure a remaining layer quantity as the mask layer. The substrate processing method receives a wafer W in which a mask layer and an intermediate layer are stacked on a target layer to be processed in a chamber, generates plasma of processing gas in the chamber, performs an etching process on wafer W using the plasma, thereby forming a pattern shape on the target layer to be processed through the intermediate layer and the mask layer. The etching process etches the mask layer by applying excitation power of 500 W for generating plasma, maintaining processing pressure at 5 mTorr (9.31×10−1 Pa) or less, and maintain temperature of wafer W in the range of −10° C. to −20° C.
    • 公开了一种基板处理方法,其被配置为防止弯曲形状的发生在掩模层上形成垂直加工形状的孔,并确保剩余的层数作为掩模层。 基板处理方法在室内接收掩模层和中间层堆叠在被处理对象层上的晶片W,在室内产生处理气体的等离子体,使用等离子体对晶片W进行蚀刻处理, 从而通过中间层和掩模层在待加工的目标层上形成图形。 蚀刻工艺通过施加500W的激发功率来产生等离子体,维持处理压力为5mTorr(9.31×10 -1 Pa)或更低,并将晶片W的温度保持在-10℃的范围内来蚀刻掩模层。 至-20℃