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131. 发明公开

EP4403677A3 SIC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SIC INGOT PRODUCED BY GROWING SAID SIC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, AND SIC WAFER PRODUCED FROM SAID SIC INGOT AND SIC WAFER WITH EPITAXIAL FILM AND METHODS RESPECTIVELY FOR PRODUCING SAID SIC WAFER AND SAID SIC WAFER WITH EPITAXIAL FILM 审中-实审
公开(公告)号：EP4403677A3
公开(公告)日：2024-08-21
申请号：EP24162314.9
申请日：2020-08-05
申请人： Kwansei Gakuin Educational Foundation , Toyota Tsusho Corporation
发明人： KANEKO, Tadaaki , KOJIMA, Kiyoshi
IPC分类号： C30B29/36 , C30B23/06 , C30B33/12 , H01L21/203 , C30B23/02 , C30B25/18 , C30B33/02 , H01L21/02
CPC分类号： C30B29/36 , H01L21/02529 , H01L21/02658 , H01L21/02378 , H01L21/02631 , H01L21/02019 , C30B33/02 , C30B33/12 , C30B23/025 , C30B23/063 , C30B25/186
摘要： An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.

132. 发明公开

EP3026147A4 SILICON CARBIDE SINGLE CRYSTAL WAFER AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL INGOT 审中-公开
标题翻译：单晶硅晶片及其制备单晶的硅块的方法
公开(公告)号：EP3026147A4
公开(公告)日：2016-10-12
申请号：EP14877562
申请日：2014-09-30
申请人： NIPPON STEEL & SUMIKIN MAT CO
发明人： NAKABAYASHI MASASHI , SHIMOMURA KOTA , NAGAHATA YUKIO , KOJIMA KIYOSHI
IPC分类号： C30B29/36 , C30B23/06
CPC分类号： C30B23/063 , C30B23/025 , C30B23/06 , C30B29/36 , H01L29/1608 , H01L29/32

133. 发明公开

EP2889398A1 Method of forming Ga2O3-based crystal film and crystal multilayer structure 有权
标题翻译：一种用于基于Ga2O3系晶体膜的制备和多层晶体结构的过程
公开(公告)号：EP2889398A1
公开(公告)日：2015-07-01
申请号：EP14200002.5
申请日：2014-12-23
申请人： Tamura Corporation , National Institute of Information and Communications Technology
发明人： Sasaki, Kohei , Higashiwaki, Masataka
IPC分类号： C30B29/16 , C30B25/20 , C30B25/18 , C30B23/02
CPC分类号： H01L21/02565 , C30B23/025 , C30B23/063 , C30B25/186 , C30B25/20 , C30B29/16 , H01L21/02414 , H01L21/02433 , H01L21/02587 , H01L21/02631 , H01L29/24 , H01L29/7787 , H01L29/78 , H01L29/7838 , H01L29/812 , H01L29/872
摘要： A method of forming a Ga 2 O3-based crystal film includes epitaxially growing a Ga2O 3 -based crystal film on a ( 001 )-oriented principal surface of a Ga 2 O 3 -based substrate at a growth teurperature of not less than 750°C. A crystal multilayer structure includes a Ga2O 3 -based substrate with a ( 001 )-oriented principal surface, and a Ga2O 3 -based crystal film formed on the principal surface of the Ga2O 3 -based substrate by epitaxial growth. The principal surface has a flatness of not more than 1 nm in an RMS value.
摘要翻译：形成基于O3-的Ga 2晶体膜的方法，包括在外延不小于750°的生长teurperature上的Ga 2 O 3系基材（001）取向的主面生长Ga2O 3系晶体膜 C. 晶体多层结构包括具有（001）一个Ga2O 3系基材取向主面，并通过外延生长在Ga2O 3个系基材的主表面上形成Ga2O 3系晶体膜形成。的主面具有在RMS值不大于1nm的平坦度。

134. 发明公开

EP2862198A1 METHOD FOR DEPOSITING A GROUP III NITRIDE SEMICONDUCTOR FILM 审中-公开
标题翻译：工艺用于分离的III族氮化物半导体层的
公开(公告)号：EP2862198A1
公开(公告)日：2015-04-22
申请号：EP13739811.1
申请日：2013-06-14
申请人： Oerlikon Advanced Technologies AG
发明人： CASTALDI, Lorenzo , KRATZER, Martin , FELZER, Heinz , MAMAZZA, Robert, Jr.
IPC分类号： H01L21/20 , H01L21/02 , H01L21/3065
CPC分类号： H01L21/02658 , C23C14/022 , C23C14/0617 , C23C14/541 , C30B23/063 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02631 , H01L21/02661
摘要： A method for depositing a Group III nitride semiconductor film on a substrate is provided that comprises: providing a sapphire substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; holding the substrate away from a substrate facing surface of a heater by a predetermined distance; heating the substrate to a temperature by using the heater whilst the substrate is held away from the substrate facing surface of the heater, and depositing a Group III nitride semiconductor film onto the conditioned surface of the substrate by a physical vapour deposition method whilst the substrate is held away from the substrate facing surface of the heater and forming an epitaxial Group III nitride semiconductor film with N-face polarity on the conditioned surface of the substrate.

135. 发明公开

EP2620531A4 APPARATUS FOR PRODUCING SINGLE CRYSTALS 审中-公开
标题翻译：器具，用于产生硅单晶
公开(公告)号：EP2620531A4
公开(公告)日：2014-04-02
申请号：EP11826703
申请日：2011-09-01
申请人： BRIDGESTONE CORP
发明人： KONDO DAISUKE
IPC分类号： C30B23/08 , C30B23/06 , C30B29/36
CPC分类号： C30B25/12 , C30B23/02 , C30B23/025 , C30B23/063 , C30B29/36

136. 发明公开

EP2543753A4 METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL, SILICON CARBIDE CRYSTAL, AND DEVICE FOR PRODUCING SILICON CARBIDE CRYSTAL 审中-公开
标题翻译：设备用于生产碳化硅晶体，硅晶体器具，用于产生的硅晶
公开(公告)号：EP2543753A4
公开(公告)日：2014-01-15
申请号：EP11750469
申请日：2011-02-16
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NISHIGUCHI TARO
IPC分类号： C30B29/36 , C30B23/06
CPC分类号： C30B29/36 , C30B23/063

137. 发明公开

EP2620531A1 APPARATUS FOR PRODUCING SINGLE CRYSTALS 审中-公开
标题翻译： VORRICHTUNG ZUR HERSTELLUNG VON SILICIUM-EINKRISTALLEN
公开(公告)号：EP2620531A1
公开(公告)日：2013-07-31
申请号：EP11826703.8
申请日：2011-09-01
申请人： Bridgestone Corporation
发明人： KONDO, Daisuke
IPC分类号： C30B23/08 , C30B29/36
CPC分类号： C30B25/12 , C30B23/02 , C30B23/025 , C30B23/063 , C30B29/36
摘要： A cover member (40) of an apparatus (1) for producing single crystals is provided with a projection (41) generally in the center. The projection (41) is disposed so as to protrude toward the inside of a crucible main body (30) through a cover member opening (40a). A seed crystal (10) is disposed between a supporting portion (432) and a contact surface (41a) of the projection (41) which is inserted into a guide opening (43h). The apparatus (1) for producing single crystals is configured such that the contact surface (41a) presses the entire back surface of the seed crystal (10), said back surface being on the reverse side of the crystal growth surface of the seed crystal (10), against the projection (41) when a screw thread (41s) that is formed on the projection (41) is screwed to a thread groove (43g) that is formed on an engaging portion (431).
摘要翻译：用于制造单晶的装置（1）的盖构件（40）设置有大致在中心的突起（41）。突起41设置成通过盖构件开口40a朝向坩埚主体30的内侧突出。种子晶体（10）设置在支撑部分（432）和插入导向开口（43h）中的突起（41）的接触表面（41a）之间。用于制造单晶的装置（1）被构造成使得接触表面（41a）压迫晶种（10）的整个背面，所述后表面位于晶种的晶体生长表面的相反侧（如图10所示，当形成在突起41上的螺纹（41s）与形成在接合部（431）上的螺纹槽（43g）螺合时，抵靠突起（41）。

138. 发明公开

EP2584590A1 PROCESS FOR PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBIDEINZELKRISTALLS UND EINES SILICIUMCARBIDSUBSTRATS
公开(公告)号：EP2584590A1
公开(公告)日：2013-04-24
申请号：EP11795440.4
申请日：2011-02-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： NISHIGUCHI, Taro , HARADA, Shin , SASAKI, Makoto
IPC分类号： H01L21/20 , C30B29/36 , H01L21/02
CPC分类号： H01L21/02631 , C30B23/025 , C30B23/063 , C30B23/066 , C30B29/36 , C30B33/06 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/02658
摘要： Each of first and second material substrates (11, 12) made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion (30). The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion (70) for closing the gap over the opening is formed. A connecting portion (BDa) for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion (70). The closing portion (BDa) is removed. A silicon carbide single crystal is grown on the first and second front surfaces.
摘要翻译：由单晶碳化硅制成的第一和第二材料基板（11,12）中的每一个具有第一和第二后表面，第一和第二侧表面以及第一和第二前表面。第一和第二后表面连接到支撑部分（30）。第一和第二侧表面彼此间隔开间隔，间隙在第一和第二前表面之间具有开口。形成用于封闭开口上的间隙的封闭部分（70）。用于关闭开口的连接部分（BDa）通过从第一和第二侧表面沉积到闭合部分（70）上而形成。去除封闭部分（BDa）。在第一和第二前表面上生长碳化硅单晶。

139. 发明公开

EP1178520A2 Substratheizung zum gleichzeitig beidseitigen Beheizen eines Wafers 审中-公开
标题翻译： Be ung Be。。。。。。。。。
公开(公告)号：EP1178520A2
公开(公告)日：2002-02-06
申请号：EP01115992.8
申请日：2001-06-30
申请人： Forschungszentrum Karlsruhe GmbH
发明人： Scheerer, Bernd , Reiner, Johann , Geerk, Jochen, Dr.
IPC分类号： H01L21/00
CPC分类号： H01L21/67103 , C23C14/541 , C30B23/063
摘要： Eine Substratheizung zum beidseitigen Beschichten eines Wafers ist so gebaut, daß der Wafer simultan beidseitig beschichtet werden kann. Die Heizung besteht aus zwei gleichartigen, wannenförmigen Heizeinrichtungen, die spiegelbildlich zueinander stehen und so einen Heizraum, weitestgehend einen Strahlungshohlraum, bilden, wobei die beiden Heizeinrichtungen soweit auseinander stehen, daß der auf einer Transporteinrichtung sitzende, zu prozessierende Wafer gerade hochkant hindurch gezogen werden kann.
摘要翻译：加热系统由相互面对并形成封闭空间的两个镜像盘形加热器组成。承载在输送机系统上的晶片沿边缘介于两个单元之间的间隙之间。加热器系统包括通过溅射晶片两侧的材料涂层而喷涂所需的设备。加热器系统位于真空室中。

140. 发明公开

EP0127499A1 Procédé de croissance amorphe d'un corps avec cristallisation sous rayonnement 有权
标题翻译：一种用于与在辐射结晶的受试者的无定形生长方法。
公开(公告)号：EP0127499A1
公开(公告)日：1984-12-05
申请号：EP84400816.9
申请日：1984-04-20
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE Etablissement de Caractère Scientifique Technique et Industriel
发明人： Chenevas-Paule, André , Cuchet, Robert , Eloy, Jean-François
IPC分类号： C30B25/10 , C30B23/06 , C30B23/04 , C30B25/04
CPC分类号： C30B23/04 , C30B23/063 , C30B25/04 , C30B25/105 , Y10S117/904 , Y10S117/913 , Y10S148/093
摘要： s7 La présente invention concerne un procédé de croissance amorphe d'un corps avec cristallisation sous rayonnement.
On dépose de manière connue, sous forme amorphe, un corps sur un support (4) contenu dans une enceinte (2) sous vide et simultanément, on irradie une ou plusieurs surfaces déterminées de la couche (6) déposée sur le support, cette irradiation étant obtenue par un faisceau (11 ) de rayonnement électromagnétique cohérent d'irradiation ayant une puissance et une longueur d'onde aptes à désorber lesdites surfaces.

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