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    • 138. 发明申请
    • Novel method to form memory cells to improve programming performance of embedded memory technology
    • 用于形成内存单元以提高嵌入式存储器技术编程性能的新方法
    • US20070278557A1
    • 2007-12-06
    • US11443779
    • 2006-05-31
    • Jihong ChenEddie Hearl BreashearsXin WangJohn Howard Macpeak
    • Jihong ChenEddie Hearl BreashearsXin WangJohn Howard Macpeak
    • H01L29/788
    • H01L29/7881H01L21/26586H01L27/115H01L27/11521H01L29/40114
    • An embedded memory device and method of forming MOS transistors having reduced masking requirements and defects using a single drain sided halo implant in the NMOS FLASH or EEPROM memory regions is discussed. The memory device comprises a memory region and a logic region. Logic transistors within the logic region have halos implanted at an angle underlying the channel from both drain and source region sides. Asymmetric memory cell transistors within the memory region receive a selective halo implant only from the drain side of the channel and not from the source side to form a larger halo on the drain side and leave a higher dopant concentration more deeply into the source side. One method of asymmetrically forming memory cell transistors comprises masking over the memory region; halo implanting a first conductivity dopant in NMOS regions of the logic region in first and second implant directions; masking over the logic region; halo implanting the first conductivity dopant in NMOS regions of the memory region in the second implant direction only, thereby reducing the number of masks required; masking over the memory region; halo implanting a second conductivity dopant in PMOS regions of the logic region in the first and second implant directions.
    • 讨论了在NMOS闪存或EEPROM存储器区域中使用单个漏极侧卤素注入形成具有减小的掩模要求和缺陷的MOS晶体管的嵌入式存储器件和方法。 存储器件包括存储器区域和逻辑区域。 逻辑区域内的逻辑晶体管具有从沟道和源极区两侧的通道下方的角度注入的光晕。 存储器区域内的不对称存储单元晶体管仅从沟道的漏极侧接收选择性晕圈注入而不从源极接收,以在漏极侧形成较大的卤素,并且在源极侧更高的掺杂浓度。 一种不对称形成存储单元晶体管的方法包括:对存储区进行掩蔽; 在第一和第二植入方向上在所述逻辑区域的NMOS区域中注入第一电导率掺杂剂; 屏蔽逻辑区域; 在第二注入方向仅在存储区域的NMOS区域中注入第一电导率掺杂剂,从而减少所需的掩模数量; 掩蔽内存区域; 在所述第一和第二植入方向上在所述逻辑区域的PMOS区域中注入第二电导率掺杂剂。
    • 140. 发明申请
    • Method for gracefully degrading packet data voice quality in a wireless communication network
    • 在无线通信网络中正常地降级分组数据语音质量的方法
    • US20070097957A1
    • 2007-05-03
    • US11264230
    • 2005-10-31
    • Binshi CaoXin WangYang Yang
    • Binshi CaoXin WangYang Yang
    • H04L12/66
    • H04L47/10H04L47/11H04L47/14H04L47/2416H04L47/25H04L47/32H04W28/06H04W28/10
    • A method for gracefully degrading packet data voice quality in a wireless network includes monitoring and evaluating data transfer conditions on the network. This may be done on a network-wide level, or for access terminals individually. For the evaluation, data transfer conditions are compared to criteria that indicate a relative quality level. Based on the evaluation, a variable number of the voice data packets addressed to the access terminals are eliminated prior to transmission over the airlink. If conditions are optimal, no data packets are eliminated. If not, one or more packets may be eliminated periodically (e.g., 1 data packet out of every five) until conditions change. The access terminals compensate for any eliminated packets. In this manner, packet data voice quality is gracefully degraded for temporarily reducing voice traffic on the network when conditions are poor, avoiding the need for dropped calls or the like.
    • 一种在无线网络中适度降级分组数据语音质量的方法包括监测和评估网络上的数据传输条件。 这可以在网络范围内进行,也可以单独进行接入终端。 对于评估,将数据传输条件与指示相对质量水平的标准进行比较。 基于该评估,在通过空中链路传输之前,消除了寻址到接入终端的可变数量的语音数据分组。 如果条件最佳,则不会消除任何数据包。 如果不是,则可以周期性地消除一个或多个分组(例如,每5个中1个数据分组),直到条件改变为止。 接入终端补偿任何消除的分组。 以这种方式,当条件差时,分组数据语音质量被适度地降级以临时降低网络上的语音流量,避免了掉话等的需要。