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    • 133. 发明专利
    • POWER DISTRIBUTOR
    • JPS60247303A
    • 1985-12-07
    • JP10306284
    • 1984-05-22
    • MITSUBISHI ELECTRIC CORP
    • TAKAGI SUNAOKIYONO KIYOHARUTAKEDA FUMIO
    • H01P3/08H01P5/12H01P5/19
    • PURPOSE:To obtain a miniature power distributor having small loss and excellent isolation characteristics by connecting an input terminal to each distribution terminal via a distribution constant line that has a prescribed impedance and the electrical length set at about 1/4 wavelength in terms of the using frequency, connecting the adjacent distribution terminals with the resistance having the prescribed value and then connecting these resistances by a metallic line with prescribed distance. CONSTITUTION:An input terminal 1 is connected to distribution terminals 5-8 respectively by means of a distribution constant line 20 having its characteristic impedance ZO and the electrical length set at about 1/4 wavelength in terms of the using frequency. Then the resistances 21 and 22 of resistance values RA and BB are loaded between terminals 5 and 6 and terminals 7 and 8 respectively. Furthermore two resistance 22 are loaded between terminals 6 and 7, and metallic films 23-25 are formed at each junction of resistances 21 and 22, 22 and 22 and 22 and 21 respectively. These films 23-25 are connected to each other with a metallic line 26.
    • 134. 发明专利
    • Interdigital capacitor
    • INTERDIGITAL电容器
    • JPS59105341A
    • 1984-06-18
    • JP21580382
    • 1982-12-09
    • Mitsubishi Electric Corp
    • IKEDA YUKIOTAKAGI SUNAO
    • H01L27/04H01L21/822H01L23/12H01L23/64H01L29/93H01P5/04
    • H01L23/642H01L2924/0002H01L2924/3011H01L2924/00
    • PURPOSE:To vary characteristic impedance and a wavelength shortening rate in the case when the capacitor is regarded as a distribution fixed-number line by forming an epitaxial layer to the lower section of opposite fingers, joining a Schottky with a boundary surface between one finger and the epitaxial layer and forming an ohmic junction to the other finger. CONSTITUTION:The epitaxial layer 13 formed to the lower section of the opposite fingers 4, 5 of the interdigital capacitor used for a microwave integrated circuit, and the Schottky junction surfaces are formed to the boundary surfaces 15 among one fingers 4 and the epitaxial layer 13 and the ohmic junctions to boundary surfaces 16 among the other fingers 5 and the epitaxial layer 13. Consequently, the size of an extent of a depletion layer 18 changes by adjusting a bias power supply 17, and the magnitude C3 of an equivalent variable capacitance 19 depends upon the size of the extent of the depletion layer 18 because the equivalent variable capacitance 19 consists of the coupling capacitance of the fingers 4 and the fingers 5 and depletion capacitance depending upon the extent of the depletion layer. Accordingly, characteristic impedance and the wavelength shortening rate in the case when the interdigital capacitor is regarded as the distribution fixed-number line can be changed by adjusting the bias power supply 17 and altering C3.
    • 目的:为了改变特征阻抗和波长缩短率,在通过在相对指的下部形成外延层将电容器视为分布固定数线的情况下,将肖特基与一个手指和 外延层并形成与其他手指的欧姆结。 构成:形成在用于微波集成电路的叉指电容器的相对指4,5的下部的外延层13和肖特基结表面形成在一个指状物4和外延层13之间的边界表面15上 以及与其他指5和外延层13之间的边界面16的欧姆结。因此,耗尽层18的程度的大小通过调整偏置电源17而变化,并且等效可变电容19的幅度C3 取决于耗尽层18的程度的大小,因为等效可变电容19由指状物4和指状物5的耦合电容和耗尽电容构成,这取决于耗尽层的程度。 因此,可以通过调整偏置电源17并改变C3来改变在指示电容器被认为是分配固定数线的情况下的特性阻抗和波长缩短率。
    • 135. 发明专利
    • WAVEGUIDE-MIC CONVERTER
    • JPS58147202A
    • 1983-09-02
    • JP3039782
    • 1982-02-26
    • MITSUBISHI ELECTRIC CORP
    • TAKAGI SUNAOTAKEDA FUMIO
    • H01P5/107H01P5/12
    • PURPOSE:To obtain the functions of a waveguide-MIC converter and a power distributor simultaneously by inserting MIC substrates which have probe parts for enabling waveguide-MIC conversion from respective corner parts of a square waveguide. CONSTITUTION:At prescribed positions of respective corner parts of the square waveguide 10, openings 11a-11d are formed in prescribed shapes and MIC substrates 12a-12d are inserted into the waveguide 10 through the openings 11a- 11d along a plane containing the waveguide axis and diagonals. On one-side surfaces of MIC substrates 13 used as the substrates 12a-12d, strip conductors 16 provided with probe parts 15 for enabling the waveguide-MIC conversion are formed, and the other-side surfaces which are not inserted into the waveguide 10 are coated with grounding conductors 18; the conductors 16 and 17 form microstrips respectively. This constitution converts an electromagnetic wave propagating in the waveguide 10 in basic propagation mode into propagation mode of MIC and also distribute electric power to the substrates 12a-12d equally.
    • 136. 发明专利
    • FET AMPLIFIER
    • JPS58146113A
    • 1983-08-31
    • JP2968882
    • 1982-02-25
    • MITSUBISHI ELECTRIC CORP
    • KIYONO KIYOHARUTAKAGI SUNAO
    • H03F3/60
    • PURPOSE:To match an external impedance and a impedance at the terminal of amplifier, by opening one end of a strip conductor connected to the terminal and connecting one end of a strip conductor placed in parallel to the specified terminal of the amplifier and the other end to a resistor and a capacitor for termination. CONSTITUTION:One end of a strip conductor 18 connected to a power supply is opened. One end of a strip conductor 19 in parallel with the conductor 18 is connected to an input terminal 2 of an FET amplifier 1, and the other end is terminated with a resistor 11 and a capacitor 12. Since the capacitance of the capacitor 12 is selected for the reactance so as to be almost zero at microwave band, the strip conductors 18, 19, a dielectric base 8 and a ground conductor 9 form a coupling line 20. This coupling line is a band pass filter and arbitrary characteristic impedance is selected by selecting the width and length of the strip conductors 18, 19 and the interval between the strip conductors suitably.
    • 137. 发明专利
    • MICROWAVE TRANSISTOR OSCILLATOR
    • JPS5834603A
    • 1983-03-01
    • JP13301481
    • 1981-08-25
    • MITSUBISHI ELECTRIC CORP
    • TAKAGI SUNAOOGISO KOUJI
    • H01P5/107H03B5/18
    • PURPOSE:To constitute a hollow for stabilizing oscillation frequency and a waveguide-MIC converter simultaneously by loading a dielectric substrate that forms a microwave integrated circuit MIC constituting an oscillating circuit in a square waveguide one end of which is short-circuited. CONSTITUTION:A hole 21 is provided at a position bisecting the length L of wider face of a square waveguide one end of which is short-circuited, and a dielectric substrate 5 is inserted to the hole. The first strip conductor 23 forming the first probe part 22 that changes propagation mode electromagnetic field of the waveguide and propagation mode electromagnetic field of a microstrip, the second strip condcutor 25 that forms the second probe part 24 and the third strip conductor 26 for obtaining specified feedback are provided on one face of the dielectric substrate 5. The first, second, and third terminals 1, 2, 3 of a transistor 1 are connected to the first, second and third strip conductors 23, 25, 26 respectively, and other face of the dielectric substrate 5 is covered with a grounding conductor 27.
    • 139. 发明专利
    • INJECTION SYNCHRONISM OSCILLATION SYSTEM
    • JPS55110435A
    • 1980-08-25
    • JP1749379
    • 1979-02-16
    • MITSUBISHI ELECTRIC CORP
    • TAKAGI SUNAOOGISO KOUJITAKEDA FUMIO
    • H03L7/24
    • PURPOSE:To simplify, make small and light the synchronism oscillator, by constituting the injection synchronism oscillator through the connection of two reactance circuits to the gate and source of FET and injecting the signal of frequency-divided or high frequency near the self-running frequency of the oscillator. CONSTITUTION:In the injection synchronism oscillation system using FET1, the gate terminal 2 of FET1 is connected to the reactance circuit 3, the source terminal 4 is connected to the reactance circuit 5, and the drain terminal 6 is connected to the impedance converstion circuit 7. Further, the circuit 7 is connected to the load 9 via the filter 11 having the pass band at frequency f0 and also connected to the reference signal generator 10 via the filter 12 having pass band at the frequency f1. The circuits 3 and 5 connected to FET1 constitute the injection synchronism oscillator and the signal having the frequency near the frequency divided or harmonics of the selfrunning frequency of the oscillator is taken as the injection signal, simplify the oscillator with small size and light weight.