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121. 发明专利

JPH01159376A METHOD AND DEVICE FOR COATING INSIDE OF HEAT-RESISTANT MEMBER WITH ALUMINUM 失效
公开(公告)号：JPH01159376A
公开(公告)日：1989-06-22
申请号：JP31688487
申请日：1987-12-15
申请人： HITACHI LTD
发明人： YAMAGUCHI SHIZUKA , FUKUSHIMA MASATAKE , SHIMIZU MASAO , KOJIMA YOSHIYUKI , YAMAGUCHI TSUNEO , KUROSAWA SOICHI
IPC分类号： C23C16/12 , C23C16/44 , C23C16/448 , C23C16/455
摘要： PURPOSE:To coat the inside of a heat-resistant member in uniform thickness in the heat-history range not deteriorating the characteristic of a heat-resistant alloy by controlling the flow velocity of a gas to be discharged into a reaction furnace from the internal passage of the heat-resistant member at the time of forming a film by the chemical vapor deposition using Al halide and a carrier gas. CONSTITUTION:The heat-resistant member having an internal passage such as a turbine blade 2 is arranged in the reaction furnace 1, the furnace 1 and the blade 2 are kept at a treating temp. by a heating source 3 outside the furnace 1, and the inside of the furnace 1 is depressurized to a treating pressure by a evacuation device 6. The AlCl3 sublimed from a metal halide 5 as the coating material is sent to a gas conversion chamber 7 with a carrier gas such as gaseous H2 4, allowed to react with the Al 8 as a metallic reactant, and converted to AlCl. The gaseous mixture of AlCl and H2 is then supplied to the internal passage of the blade 2 through a supply vessel 9. A gas flow velocity control vessel 10 is connected to the other end of the internal passage, and the gaseous mixture is discharged into the furnace 1 from the control vessel 10 through its outlet 11.

122. 发明专利

JPS63179076A FORMATION OF THIN FILM 失效
公开(公告)号：JPS63179076A
公开(公告)日：1988-07-23
申请号：JP903187
申请日：1987-01-20
申请人： TOSHIBA CORP
发明人： NAKADA RENPEI
IPC分类号： H01L21/285 , C23C16/12 , C23C16/20 , C23C16/40 , C23C16/44 , H01L21/205
摘要： PURPOSE:To make the thickness of films uniform by heating substrates in the reaction tube of a hot wall type vacuum CVD device, cooling the reaction tube and introducing reactive gases so as to reduce the consumption of the gases by the inner wall of the reaction tube. CONSTITUTION:Substrates 10 arranged in the quartz reaction tube 1 of a hot wall type vacuum CVD device are heated to a desired temp. with a heater 2 placed around the tube 1. The tube 1 is then cooled with outer cooling mechanisms 3, 4, reactive gases are introduced from gas chambers 5 and thin films are formed on the substrates 10.

123. 发明专利

JPS6311670A FORMATION OF THIN FILM 失效
公开(公告)号：JPS6311670A
公开(公告)日：1988-01-19
申请号：JP21750586
申请日：1986-09-16
申请人： TOSHIBA CORP
发明人： MATSUDA TETSURO
IPC分类号： H01L21/285 , C23C8/24 , C23C16/04 , C23C16/12 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/28
摘要： PURPOSE:To form a good-quality high melting point metallic film on the surface of substrates to be treated by preliminarily forming a metal nitride film on the inside wall of a reaction vessel and the surface of members except the substrates to be treated thereby preventing the decrease in the deposition speed and selectively arising from the high melting point metallic film sticking to the above-mentioned inside wall, etc., in the previous stage. CONSTITUTION:After a quartz boat 10 supporting plural sheets of the substrates 9 to be treated is disposed in a reaction tube 1, the inside of the furnace is heated to a prescribed temp. The inside of the tube 1 is evacuated 8 and thereafter, gaseous WF6 and gaseous H2 are respectively supplied 3, 4 into the tube 1 to grow a W film in a vapor phase onto the substrates 9 to a prescribed thickness. The inside of the tube 1 is thereafter evacuated to a reduced pressure and the inside of the tube 1 is heated to a prescribed temp. Gaseous NH3 is introduced 6 into the tube 1 to form a W2N film 22 on the surface of the W film 15 sticking the inside wall of the tube 1 and the surface of the boat 10. Another substrates 9 to be treated are then disposed again into the boat 10 subjected to a nitriding treatment and after the substrates are disposed in the tube 1, a series of the above-mentioned stages for forming the W film and W2N film are repeated.

124. 实用新型

JPS6229956U 失效
公开(公告)号：JPS6229956U
公开(公告)日：1987-02-23
申请号：JP12178185
申请日：1985-08-08
IPC分类号： C23C14/04 , B60R13/00 , B60R13/04 , C23C16/12

125. 发明专利

JPS61272378A APPARATUS FOR ALUMINUM FILM BY CVD AND MANUFACTURE OF SAID APPARATUS 失效
公开(公告)号：JPS61272378A
公开(公告)日：1986-12-02
申请号：JP11502785
申请日：1985-05-27
申请人： FUJITSU LTD
发明人： FURUMURA YUJI , MIENO FUMITAKE , ITO KIKUO , TAKEDA MASAYUKI
IPC分类号： C23C16/12 , H01L21/28 , H01L21/285
摘要： PURPOSE:To form a superior Al film on each substrate by producing AlCl3 in the reaction tube of a CVD apparatus for Al. CONSTITUTION:A gas contg. HCl is fed from the gas feed port 13 of a reaction tube 11 as shown by an arrow. A crucible 16 for evaporating Al 15 is placed in the tube 11 on the upper stream side to which the gas is fed, the Al 15 is evaporated by heating to produce gaseous AlCl3, and each substrate 12 is heated to a proper temp. to form an Al film on the surface of the substrate 12. By this method, superior Al can be deposited and the control of the temps. of a vessel contg. AlCl3 and a pipe for feeding it is made unnecessary, facilitat ing the maintenance of the apparatus.

126. 发明专利

JPS5856750B2 JPS5856750B2 - 失效
公开(公告)号：JPS5856750B2
公开(公告)日：1983-12-16
申请号：JP2410475
申请日：1975-02-28
申请人： Gen Electric
发明人： JON JOSEFU GURISHITSUKU
IPC分类号： C22C21/00 , C23C10/30 , C23C16/12 , C23C24/08
CPC分类号： C23C10/30 , C23C16/12

127. 发明专利

JPS57158371A FORMATION OF METALLIC THIN FILM 失效
公开(公告)号：JPS57158371A
公开(公告)日：1982-09-30
申请号：JP4221181
申请日：1981-03-23
申请人： FUJITSU LTD
发明人： ITOU TAKASHI
IPC分类号： C23C16/12 , H01L21/28 , H01L21/285
摘要： PURPOSE:To form a uniform thin Al film even on a substrate with a large step without causing breaking by dissociating AlX3 (X is halogen) in a gaseous plasma atmosphere and depositing the formed metallic Al on the surface of the substrate at a specified temp. CONSTITUTION:AlX3 9 as starting material in a container 8 is sublimed by heating with a heating furnace 10. Gaseous H2 is introduced as a carrier gas from an inlet 11. the internal pressure of a reactive tube 1 is suitably kept by evacuation from an exhaust port 7 and the introduction of H2 or an inert gas from an inlet 12. A susceptor 3 is heated to a temp. below the m.p. of Al and above the sublimation temp. of AlX3 with a high frequency coil 2. At the same time, plasma is generated in the gaseous H2 contg. AlX3 in the tube 1, the AlX3 is dissociated, and a thin Al film is formed on the surface of an si wafer 4. Even in case of a substrate with a step obtd. by forming an SiO2 pattern on the wafer 4, Al is deposited on the surface of the substrate and the surface of the SiO2 wall in the almost same thickness.

128. 发明专利

JPS5651569A INNER AND OUTER SURFACE COATING METHOD OF PLURAL HOLLOW ARTICLES 失效
公开(公告)号：JPS5651569A
公开(公告)日：1981-05-09
申请号：JP13752080
申请日：1980-10-01
申请人： UNITED TECHNOLOGIES CORP
发明人： ROBAATO SUCHIYUAATO BENDEN , RICHIYAADO SUTANREI PARUZUKOOS
IPC分类号： C23C16/12 , C23C10/08 , C23C10/48 , C23C10/50 , C23C16/04

129. 发明专利

JP2016533637A 無線周波に透過な窓有权
标题翻译：透明窗口到射频
公开(公告)号：JP2016533637A
公开(公告)日：2016-10-27
申请号：JP2016518358
申请日：2014-05-30
申请人：アップルインコーポレイテッド , アップルインコーポレイテッド
发明人：アビジートミスラ， , アビジートミスラ， , ブライアンエス．トライオン， , ブライアンエス．トライオン， , チャールズジェイ．クーマン， , チャールズジェイ．クーマン， , スティーブンビー．リンチ， , スティーブンビー．リンチ， , ジェームズエー．ライト， , ジェームズエー．ライト，
IPC分类号： H05K5/04 , C23C14/14 , C23C16/12
CPC分类号： H01Q1/42 , H01Q1/243 , H01Q1/44
摘要：閾値厚さを有するアルミニウム層、アルミニウム層の第1の側の非導電層、及び、アルミニウム層の第2の側の無線周波(RF)透過層、を包含する電子筐体内のデバイス用のパッチが提示されている。上述のようなパッチを含むアンテナ窓を製造するための方法が、更に開示されており、この方法は、陽極酸化されたアルミニウム層に隣接したアルミニウム層の厚さを判定する工程を含む。無線周波(RF)透過層の上に閾値厚さを有するアルミニウム層をコーティングして、RF透過な積層体を形成する工程を含む、アンテナ窓を製造するための方法が、提示されている。アルミニウムの厚さを除去する工程を含む、アンテナ窓を製造するための方法が、更に提示される。アルミニウム基板の上にマスクを配置する工程と、アルミニウム基板を選択された厚さに陽極酸化する工程と、を含むアンテナ窓を製造するための方法が、更に提示される。
摘要翻译：具有阈值厚度，铝层的第一侧的非导电层，和一个射频上的铝层的第二侧（RF）传输层，用于设备的电子壳体，其包括贴片铝层据介绍。用于制备包括如上所述的贴片天线窗口的方法，进一步公开，所述方法包括：确定相邻于该阳极化铝层的铝层的厚度的步骤。通过涂敷具有射频（RF）发射层上形成厚度阈值的铝层，包括形成一个RF透明层叠体的工序中，提出了一种用于制造天线窗口的方法。包括在移除所述铝的厚度的步骤中，用于制造天线窗口的方法进一步提出。铝衬底上放置掩模，选择阳极氧化的铝基底的厚度的步骤，用于制造包括天线窗口的方法进一步提出。

130. 发明专利

JP5698896B2 スラリー状拡散アルミナイド被覆方法有权
标题翻译：浆料扩散铝化物涂覆工艺
公开(公告)号：JP5698896B2
公开(公告)日：2015-04-08
申请号：JP2008291671
申请日：2008-11-14
申请人：ゼネラル・エレクトリック・カンパニイ
发明人：デニス・ウィリアム・カヴァナウ , カナン・ウスル・ハードウィック , マシュー・ジェームズ・オコネル , トッド・スティーブン・モーラン
IPC分类号： C23C16/12 , C23C16/448 , F01D5/28 , F02C7/00 , F23R3/42 , C23C10/08
CPC分类号： C23C10/20 , C23C10/60

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