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121. 发明授权

EP0648373B1 MICROWAVE ENERGIZED DEPOSITION PROCESS WITH SUBSTRATE TEMPERATURE CONTROL 失效
标题翻译：微波馈送有控制基板温度的沉积。
公开(公告)号：EP0648373B1
公开(公告)日：2002-01-30
申请号：EP93918128.5
申请日：1993-06-23
申请人： UNITED SOLAR SYSTEMS CORPORATION
发明人： GUHA, Subhendu , YANG, Chi, C. , XU, XiXiang
IPC分类号： H01L21/20 , C23C16/50 , C23C16/54 , H01L31/20 , H01L21/205
CPC分类号： H01L31/204 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： Substrate temperatures are maintained above 400 °C during the microwave energized glow discharge deposition of Group IV semiconductor materials. The substrate temperature range provides for the preparation of materials having improved electrical properties.

122. 发明公开

EP1110248A1 METHOD FOR DEPOSITING LAYERS OF HIGH QUALITY SEMICONDUCTOR MATERIAL 有权
标题翻译：用于分离高品位的半导体层
公开(公告)号：EP1110248A1
公开(公告)日：2001-06-27
申请号：EP99948051.0
申请日：1999-08-20
申请人： UNITED SOLAR SYSTEMS CORPORATION
发明人： GUHA, Subhendu , YANG, Chi, C.
IPC分类号： H01L31/18
CPC分类号： C23C16/50 , C23C16/30 , C23C16/52 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

123. 发明公开

EP0849811A3 Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device 失效
标题翻译：一种用于制造光电器件的非单晶半导体薄膜及其制造方法的一个非单晶半导体薄膜的制造方法
公开(公告)号：EP0849811A3
公开(公告)日：2000-05-24
申请号：EP97122196.5
申请日：1997-12-16
申请人： CANON KABUSHIKI KAISHA
发明人： Hori, Tadashi , Okabe, Shotaro , Sakai, Akira , Kohda, Yuzo , Yajima, Takahiro
IPC分类号： H01L31/20 , H01L31/075 , H01L21/205 , C23C16/24
CPC分类号： C23C16/545 , C23C14/562 , H01L21/0237 , H01L21/0243 , H01L21/02447 , H01L21/0245 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S438/907
摘要： Provided are an apparatus of forming a non-single-crystal semiconductor thin film comprising a film deposition chamber having a film-forming space surrounded by a film deposition chamber wall and a beltlike substrate, and an external chamber surrounding the deposition chamber wall, wherein while the beltlike substrate is moved in a longitudinal direction thereof, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma therein, thereby forming a non-single-crystal semiconductor thin film on a surface of the beltlike substrate, and wherein a cooling mechanism and a temperature-increasing mechanism are provided such that the mechanisms cover a part of an outside surface of the deposition chamber wall, and wherein the gas supply device comprises a gas manifold, the gas manifold being provided apart from the deposition chamber wall, and methods of forming a non-single-crystal semiconductor thin film using the above forming apparatus and methods of producing a photovoltaic device by using the methods of forming the thin film. These permit a non-single-crystal semiconductor thin film to be formed across a large area on the substrate and with high quality and excellent uniformity.
摘要翻译：本发明提供在形成非单晶半导体薄膜，其含有具有由膜沉积室的壁和一个带状基板包围的成膜空间的成膜室的装置，以及以包围所述成膜室的壁的外部腔室，worin而带状基片在其纵向方向上，膜形成气体通过气体供给装置到所述成膜空间和微波能量引入从微波施加到成膜空间辐射移动，以在其中感应出的微波等离子体，由此将带状的基材的表面上形成非单晶半导体薄膜，和worin的冷却机构和温度增大机构设置检查那样的机制覆盖沉积腔室壁的外表面的一部分，到形成非单晶半导体薄膜，其含有具有成膜空间surroun一个膜沉积室的设备通过一个膜沉积室的壁和一个带状基材，并围绕所述沉积腔室的壁，worin而带状衬底被在其纵向方向上，膜形成气体通过气体供给装置引入膜移动外室DED - 形成的空间和等离子体在膜形成空间诱导，从而形成带状的基板的表面上的非单晶半导体薄膜，和worin气体供给装置包括一气体歧管，被设置在气体歧管除了从沉积室的壁，形成使用上述成形装置和通过使用形成薄膜的方法的制造光电器件的方法的非单晶半导体薄膜的方法。这些允许非单晶半导体薄膜在大区域内形成在衬底上并以高品质和良好的均匀性。

124. 发明公开

EP0828301A2 Photovoltaic element and method of and apparatus for manufacturing the same 失效
标题翻译： Photovoltaisches Bauelement und Verfahren zur Herstellung desselben
公开(公告)号：EP0828301A2
公开(公告)日：1998-03-11
申请号：EP97115342.4
申请日：1997-09-04
申请人： CANON KABUSHIKI KAISHA
发明人： Okabe, Shotaro , Fujioka, Yasushi , Kanai, Masahiro , Sakai, Akira , Sawayama, Tadashi , Kohda, Yuzo , Hori, Tadashi , Yajima, Takahiro
IPC分类号： H01L31/075 , H01L31/20 , H01L31/052
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.
摘要翻译：本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法以及用于连续批量生产该装置的装置。

125. 发明授权

EP0509215B1 Multi-layered photovoltaic element having at least three unit cells 无效
标题翻译：多层光电元件，包括至少三个基本单元
公开(公告)号：EP0509215B1
公开(公告)日：1996-07-24
申请号：EP92102977.3
申请日：1992-02-21
申请人： CANON KABUSHIKI KAISHA
发明人： Murakami, Tsutomu, c/o Canon Kabushiki Kaisha , Matsuyama, Jinsho, c/o Canon Kabushiki Kaisha , Matsuda, Koichi, c/o Canon Kabushiki Kaisha , Yamamoto, Hiroshi, c/o Canon Kabushiki Kaisha , Yamashita, Toshihiro, c/o Canon Kabushiki Kaisha
IPC分类号： H01L31/075 , H01L31/20
CPC分类号： H01L31/076 , H01L31/204 , Y02E10/548 , Y02P70/521

126. 发明公开

EP0710402A1 INTEGRIERTES LASERSTRUKTURIERUNGSVERFAHREN FÜR DÜNNFILMSOLARZELLEN 失效
标题翻译：集成的激光构筑方法薄膜太阳能CELLS
公开(公告)号：EP0710402A1
公开(公告)日：1996-05-08
申请号：EP94920402.0
申请日：1994-07-12
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： KARG, Franz , RIEDL, Wolfgang , EINZINGER, Richard , AULICH, Hubert
IPC分类号： H01L31 , B23K26 , H01L21 , H01L27
CPC分类号： H01L31/046 , B23K26/0676 , B23K26/40 , B23K2203/172 , H01L31/0322 , H01L31/0463 , H01L31/204 , Y02E10/541 , Y02P70/521
摘要： In order to structure thin film solar cells with a transparent substrate and a transparent front electrode, the active semiconductor layer and the backing electrode are lifted off in a single step to produce the required structure pits. For that purpose, the energy required is irradiated by laser pulses through the substrate and the front electrode into the semiconductor material. The semiconductor material is thus blasted off the front electrode in the irradiated area without leaving any residues. In order to wire adjacent solar cell strips, the strips are further irradiated directly next to the generated structure pits. By reversing the phase of the semiconductor layer, low impedance areas are generated that connect the backing electrode of a first strip-shaped solar cell to the front electrode of a second strip-shaped solar cell.

127. 发明公开

EP0661761A3 Method of manufacturing photoelectric transducer 失效
标题翻译： Herstellungsverfahrenfüreinen photoelektrischen Umwandler。
公开(公告)号：EP0661761A3
公开(公告)日：1996-05-01
申请号：EP94309905.1
申请日：1994-12-29
申请人： CANON KABUSHIKI KAISHA
发明人： Tokutake, Nobuo , Sano, Masafumi , Hayashi, Ryo , Higashikawa, Makoto
IPC分类号： H01L31/20 , H01L31/0392 , H01L31/052 , H01L31/075
CPC分类号： H01L31/076 , H01L31/03921 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： The present invention is intended to provide a method of manufacturing a photoelectric transducer stably, constantly and in a high yield that has a high conversion efficiency and high reliability durable for a long period use and is characterized in that the method of manufacturing a photoelectric transducer having a functional film formed on a conductive substrate comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, allowing the surface of the conductive substrate to contact with purified water, and forming the functional film. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atom as the matrix.
摘要翻译：本发明的目的在于提供一种稳定，稳定且高成品率地制造光电转换器的方法，该方法具有转换效率高，耐久性高的高可靠性，其特征在于，制造具有形成在导电性基板上的功能膜包括用含有清水的清洗液对导电性基材进行超声波清洗，使导电性基材的表面与净化水接触，形成功能膜。功能膜的特征在于，通过等离子体CVD法制备的金属层作为光反射层，反射增强层和半导体光电器件层，其包含含有硅原子作为基体的非单晶材料。

128. 发明授权

EP0317350B1 A pin function photovoltaic element, tandem und triple cells 失效
标题翻译： pin结光电元件，串联和三重细胞。
公开(公告)号：EP0317350B1
公开(公告)日：1995-06-21
申请号：EP88310933.2
申请日：1988-11-18
申请人： CANON KABUSHIKI KAISHA
发明人： Nakagawa, Katsumi , Ishihara, Shunichi , Kanai, Masahiro , Arao, Kozo , Fujioka, Yasushi , Sakai, Akira
IPC分类号： H01L31/06 , H01L31/02 , H01L31/18 , H01L21/365
CPC分类号： H01L31/076 , H01L31/02963 , H01L31/0392 , H01L31/03925 , H01L31/075 , H01L31/1828 , H01L31/202 , H01L31/204 , Y02E10/543 , Y02E10/548 , Y02P70/521

129. 发明公开

EP0509215A1 Multi-layered photovoltaic element having at least three unit cells 无效
标题翻译： Mehrschichtiges photovoltaisches元素bestehend aus zumindest drei Basiszellen。
公开(公告)号：EP0509215A1
公开(公告)日：1992-10-21
申请号：EP92102977.3
申请日：1992-02-21
申请人： CANON KABUSHIKI KAISHA
发明人： Murakami, Tsutomu, c/o Canon Kabushiki Kaisha , Matsuyama, Jinsho, c/o Canon Kabushiki Kaisha , Matsuda, Koichi, c/o Canon Kabushiki Kaisha , Yamamoto, Hiroshi, c/o Canon Kabushiki Kaisha , Yamashita, Toshihiro, c/o Canon Kabushiki Kaisha
IPC分类号： H01L31/075 , H01L31/20
CPC分类号： H01L31/076 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A multi-layered photovoltaic element obtained by stacking at least three cells for generating photovoltaic forces. A second cell formed adjacent to a light incident-side cell and adapted to receive light having passed through the light incident-side cell includes an i-type semiconductor layer having a band gap falling within a range of 1.45 eV to 1.60 eV. The i-type semiconductor layer essentially consists of a silicon-containing amorphous material.
摘要翻译：通过堆积至少三个用于产生光伏力的电池获得的多层光电元件。与光入射侧单元相邻并且适于接收通过光入射侧单元的光的第二单元包括具有落在1.45eV至1.60eV范围内的带隙的i型半导体层。 i型半导体层基本上由含硅无定形材料组成。

130. 发明公开

EP0494090A2 Photovoltaic device 失效
标题翻译：摄影Vorrichtung。
公开(公告)号：EP0494090A2
公开(公告)日：1992-07-08
申请号：EP92104633.0
申请日：1986-11-01
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： Yamagishi, Hideo , Kondo, Masataka , Nishimura, Kunio , Hiroe, Akihiko , Asaoka, Keizou , Tsuge, Kazunori , Tawada, Yoshihisa , Yamaguchi, Minori
IPC分类号： H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A semiconductor device comprising a nip-type or pin-type amorphous-containing semiconductor layer and at least two electrodes; characterized in that at least one semiconductor layer (I) being the same conductivity type as the adjacent semiconductor (II) and having higher impurity density is/are interposed between the semiconductor layer (II) and an electrode.
摘要翻译：一种半导体器件，包括夹持型或pin型非晶体半导体层和至少两个电极; 其特征在于，在所述半导体层（II）和电极之间插入至少一个与相邻半导体（II）相同的导电类型并且具有较高杂质密度的半导体层（I）。

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