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    • 122. 发明申请
    • PHOTONIC DEVICE AND METHOD OF MAKING THE SAME
    • 光电装置及其制造方法
    • US20120032168A1
    • 2012-02-09
    • US13258404
    • 2009-04-30
    • Hans S. ChoTheodore I. KaminsNathaniel J. Quitoriano
    • Hans S. ChoTheodore I. KaminsNathaniel J. Quitoriano
    • H01L31/0368H01L31/18
    • H01L31/182H01L31/0352Y02E10/546Y02P70/521
    • A photonic device (200) and method (100) of making the photonic device (200) employs preferential etching of grain boundaries of a polycrystalline semiconductor material layer (210). The method (100) includes growing (110) the polycrystalline layer (210) on a substrate (201). The polycrystalline layer includes a transition region (212) of variously oriented grains and a region (214) of columnar grain boundaries (215) adjacent to the transition region. The method further includes preferentially etching (120) the colunmar grain boundaries to provide tapered structures (220) of the semiconductor material that are continuous (217) with respective aligned grains (213) of the transition region. The tapered structures are predominantly single crystal. The method further includes forming (140) a conformal semiconductor junction (240) on the tapered structures and providing (160) first and second electrodes. The first electrode (201, 262) is adjacent to the transition region and the second electrode (260) is adjacent to a surface layer of the conformal semiconductor junction.
    • 制造光子器件(200)的光子器件(200)和方法(100)采用对多晶半导体材料层(210)的晶界的优先蚀刻。 方法(100)包括在衬底(201)上生长(110)多晶层(210)。 多晶层包括不同取向晶粒的过渡区域(212)和与过渡区域相邻的柱状晶界(215)的区域(214)。 该方法还包括优先蚀刻(120)晶体晶粒边界以提供与过渡区域的相应对准晶粒(213)连续(217)的半导体材料的锥形结构(220)。 锥形结构主要是单晶。 该方法还包括在锥形结构上形成(140)共形半导体结(240)并提供(160)第一和第二电极。 第一电极(201,262)与过渡区域相邻,第二电极(260)与保形半导体结的表面层相邻。
    • 124. 发明申请
    • Programmable Bipolar Electronic Device
    • 可编程双极电子器件
    • US20110228592A1
    • 2011-09-22
    • US13130805
    • 2009-01-13
    • Theodore I. KaminsR. Stanley Williams
    • Theodore I. KaminsR. Stanley Williams
    • G11C11/00H01L45/00
    • G11C13/0002G11C13/003G11C2213/52G11C2213/53H01L27/101H01L27/1026H01L45/08H01L45/1206H01L45/122H01L45/14H01L45/145H01L45/146H01L45/147
    • A configurable memristive device (300) for regulating an electrical signal includes a memristive matrix (350) containing a first dopant species; emitter (320), collector (310), and a base electrodes (330, 340) which are in contact with the memristive matrix (350); and a mobile dopant species contained within a central region (360) contiguous with the base electrodes (330, 340), the mobile dopant species moving within the memristive matrix (350) in response to a programming electrical field. A method of configuring and using a memristive device (300) includes: applying a programming electrical field across a memristive matrix (350) such that a mobile dopant species creates a central doped region (360) which bisects the memristive matrix (350); and applying a control voltage to the central doped region (360) to regulate current flow between an emitter electrode (320) and a collector electrode (310).
    • 用于调节电信号的可配置忆阻装置(300)包括含有第一掺杂剂物质的忆阻矩阵(350) 发射极(320),集电极(310)以及与所述忆阻矩阵(350)接触的基极(330,340); 以及包含在与所述基极(330,340)相邻的中心区域(360)内的移动掺杂剂物质,所述移动掺杂剂物质响应于编程电场在所述忆阻矩阵(350)内移动。 一种配置和使用忆阻器件(300)的方法包括:跨越忆阻矩阵(350)施加编程电场,使得移动掺杂物物质形成将所述忆阻矩阵(350)平分的中心掺杂区域(360); 以及向所述中心掺杂区域(360)施加控制电压以调节发射极电极(320)和集电极电极(310)之间的电流。
    • 128. 发明申请
    • PHOTONIC STRUCTURE
    • 光电结构
    • US20110006284A1
    • 2011-01-13
    • US12501844
    • 2009-07-13
    • Hans S. ChoDavid A. FattalTheodore I. Kamins
    • Hans S. ChoDavid A. FattalTheodore I. Kamins
    • H01L29/06H01L21/306
    • G02B6/1225B82Y20/00G02B1/005G02B6/136
    • A photonic structure includes a plurality of annealed, substantially smooth-surfaced ellipsoids arranged in a matrix. Additionally, a method of producing a photonic structure is provided. The method includes providing a semiconductor material, providing an etch mask comprising a two-dimensional hole array, and disposing the etch mask on at least one surface of the semiconductor material. The semiconductor material is then etched through the hole array of the etch mask to produce holes in the semiconductor material and thereafter applying a passivation layer to surfaces of the holes. Additionally, the method includes repeating the etching and passivation-layer application to produce a photonic crystal structure that contains ellipsoids within the semiconductor material and annealing the photonic crystal structure to smooth the surfaces of the ellipsoids.
    • 光子结构包括排列成矩阵的多个退火的基本上平滑的表面的椭圆体。 另外,提供了一种制造光子结构的方法。 该方法包括提供半导体材料,提供包括二维孔阵列的蚀刻掩模,并将蚀刻掩模设置在半导体材料的至少一个表面上。 然后通过蚀刻掩模的孔阵列蚀刻半导体材料,以在半导体材料中产生孔,然后将钝化层施加到孔的表面。 此外,该方法包括重复蚀刻和钝化层应用以产生在半导体材料内包含椭圆体的光子晶体结构,并退火光子晶体结构以平滑椭圆体的表面。
    • 130. 发明授权
    • Optical structures including selectively positioned color centers, photonic chips including same, and methods of fabricating optical structures
    • 包括选择性定位的色心的光学结构,包括它们的光子芯片以及制造光学结构的方法
    • US07805030B2
    • 2010-09-28
    • US11716174
    • 2007-03-08
    • Alexandre M. BratkovskiTheodore I. Kamins
    • Alexandre M. BratkovskiTheodore I. Kamins
    • G02B6/12
    • G02B6/12007
    • Various aspects of the present invention are directed to optical structures including selectively positioned color centers, methods of fabricating such optical structures, and photonic chips that utilize such optical structures. In one aspect of the present invention, an optical structure includes an optical medium having a number of strain-localization regions. A number of color centers are distributed within the optical medium in a generally selected pattern, with at least a portion of the strain-localization regions including one or more of the color centers. In another aspect of the present invention, a method of positioning color centers in an optical medium is disclosed. In the method, a number of strain-localization regions are generated in the optical medium. The optical medium is annealed to promote diffusion of at least a portion of the color centers to the strain-localization regions.
    • 本发明的各个方面涉及包括选择性定位的色心的光学结构,制造这种光学结构的方法以及利用这种光学结构的光子芯片。 在本发明的一个方面,光学结构包括具有许多应变定位区域的光学介质。 多个颜色中心以通常选择的图案分布在光学介质内,其中至少一部分应变定位区域包括一个或多个颜色中心。 在本发明的另一方面,公开了一种在光学介质中定位色心的方法。 在该方法中,在光学介质中产生多个应变定位区域。 光学介质被退火以促进至少一部分着色中心扩散到应变定位区域。