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121. 发明申请

US20070280028A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070280028A1
公开(公告)日：2007-12-06
申请号：US11802462
申请日：2007-05-23
申请人： Yoshiyuki Kurokawa
发明人： Yoshiyuki Kurokawa
IPC分类号： G11C8/00
CPC分类号： H01L21/84 , G11C5/02 , G11C5/04 , G11C17/12 , H01L27/1108 , H01L27/12
摘要： An object is to realize high-capacity of a memory while reducing power consumption and making the power consumption even throughout the memory. A memory includes a plurality of memory block arranged to be symmetrically to each other. Also, a specific combination of signals among address signals supplied to the memory, a memory block including a memory cell to be read from or written to is specified. Further, signals supplied to other memory blocks than the above memory block is maintained at a constant value. Consequently, a wiring length of a bit line in a memory array can be shortened, and current consumption can be made to be even among data reading or writing from/to memory cells of a variety of addresses within the memory, at the same time as reducing load capacitance.
摘要翻译：目的在于实现大容量的存储器，同时降低功耗并使整个存储器中的功耗降低。存储器包括被布置为彼此对称的多个存储块。此外，指定提供给存储器的地址信号中的信号的特定组合，包括要从其读取或写入的存储器单元的存储器块。此外，提供给比上述存储块的其他存储块的信号保持恒定值。因此，可以缩短存储器阵列中的位线的布线长度，并且可以在存储器内的各种地址的存储单元的数据读取或写入之间使电流消耗均匀，同时降低负载电容。

122. 发明申请

US20070018823A1 Semiconductor device and driving method thereof 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US20070018823A1
公开(公告)日：2007-01-25
申请号：US11440117
申请日：2006-05-25
申请人： Yoshiyuki Kurokawa
发明人： Yoshiyuki Kurokawa
IPC分类号： G08B13/14
CPC分类号： G06K19/0723 , G06K19/0705 , G06K19/0707 , G06K19/0712 , G07F19/20
摘要： A state control register is provided in addition to the arithmetic circuit and communication circuit in a semiconductor device operated with wireless communication. Operation of an arithmetic circuit which consumes large power is stopped in transmitting or receiving data, that is, in the case where the operating magnetic field varies, whereas the arithmetic circuit can be operated in the case where the operating magnetic field does not vary. In the case where the operating magnetic field varies, a large capacity power supply is not required by realizing the function that is minimum required for the reception or transmission by a receiving circuit or a transmitting circuit. That is, a high-level arithmetic process can be carried out by a small-scale power supply circuit. In this manner, a high-functional and low-power consumption semiconductor device can be provided, which is a structure suitable for a semiconductor device provided with a large-scale circuit.
摘要翻译：除了通过无线通信操作的半导体器件中的算术电路和通信电路之外，还提供了状态控制寄存器。消耗大功率的运算电路的操作在发送或接收数据时停止，即在操作磁场变化的情况下，而运算电路可以在操作磁场不变的情况下操作。在操作磁场变化的情况下，通过实现由接收电路或发送电路的接收或发送所需的最小功能，不需要大容量电源。也就是说，可以由小型电源电路执行高级运算处理。以这种方式，可以提供一种适用于具有大规模电路的半导体器件的结构的高功能和低功耗的半导体器件。

123. 发明申请

US20050277253A1 Non-volatile memory and method of manufacturing the same 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20050277253A1
公开(公告)日：2005-12-15
申请号：US11206151
申请日：2005-08-18
申请人： Kiyoshi Kato , Yoshiyuki Kurokawa
发明人： Kiyoshi Kato , Yoshiyuki Kurokawa
IPC分类号： G02F1/1368 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/314 , H01L21/336 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/423 , H01L29/786 , H01L29/788 , H01L29/792 , H01L21/00 , H01L21/84 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/42324 , H01L21/28273 , H01L27/115 , H01L29/7881
摘要： A non-volatile memory in which a leak current from an electric charge accumulating layer to an active layer is reduced and a method of manufacturing the non-volatile memory are provided. In a non-volatile memory made from a semiconductor thin film that is formed on a substrate (101) having an insulating surface, active layer side ends (110) are tapered. This makes the thickness of a first insulating film (106), which is formed by a thermal oxidization process, at the active layer side ends (110) the same as the thickness of the rest of the first insulating film. Therefore local thinning of the first insulating film does not take place. Moreover, the tapered active layer side ends hardly tolerate electric field concentration at active layer side end corners (111). Accordingly, a leak current from an electric charge accumulating layer (107) to the active layer (105) is reduced to improve the electric charge holding characteristic. As a result, the first insulating film can be further made thin to obtain a high performance non-volatile memory that operates at a low voltage and consumes less power.
摘要翻译：提供了从电荷累积层到有源层的泄漏电流减小的非易失性存储器以及制造非易失性存储器的方法。在由形成在具有绝缘表面的基板（101）上的由半导体薄膜制成的非易失性存储器中，有源层侧端（110）是锥形的。这使得通过热氧化工艺形成的第一绝缘膜（106）在有源层侧端部（110）的厚度与第一绝缘膜的其余部分的厚度相同。因此，不会发生第一绝缘膜的局部变薄。此外，锥形有源层侧端部难以容忍有源层侧端角处的电场浓度（111）。因此，减少了从电荷累积层（107）到有源层（105）的泄漏电流，以改善电荷保持特性。结果，可以进一步使第一绝缘膜变薄，以获得在低电压下工作并消耗更少功率的高性能非易失性存储器。

124. 发明授权

US09370074B2 Display device with imaging function and method for driving the same 有权
标题翻译：具有成像功能的显示装置及其驱动方法
公开(公告)号：US09370074B2
公开(公告)日：2016-06-14
申请号：US13288425
申请日：2011-11-03
申请人： Yoshiyuki Kurokawa
发明人： Yoshiyuki Kurokawa
IPC分类号： H05B33/14
CPC分类号： H05B33/145 , G06F3/042 , G09G2320/0276 , H01L27/3234
摘要： To achieve desired display on a display surface and accurate image capture in a display device with an imaging function. A light source for display (a first light-emitting element) and a light source for image capture (a second light-emitting element) that does not adversely affect display when it is on are separately provided in the display device with an imaging function. In the display device, an image can be appropriately captured using the light source for image capture in a period during which display is performed using the light source for display. Consequently, desired display on the display surface and accurate image capture can be achieved in the display device.
摘要翻译：为了在显示器表面上实现期望的显示，并且具有成像功能的显示装置中的精确图像捕获。用于显示的光源（第一发光元件）和用于图像拍摄的光源（第二发光元件）在对显示器进行打开时不会产生不利影响，分别设置在具有成像功能的显示装置中。在显示装置中，在使用显示用光源进行显示的期间，可以使用图像拍摄用光源适当地拍摄图像。因此，可以在显示装置中实现显示表面上的期望显示和精确的图像捕获。

125. 发明授权

US08717806B2 Storage element, storage device, signal processing circuit, and method for driving storage element 有权
标题翻译：存储元件，存储装置，信号处理电路和驱动存储元件的方法
公开(公告)号：US08717806B2
公开(公告)日：2014-05-06
申请号：US13342276
申请日：2012-01-03
申请人： Yoshiyuki Kurokawa
发明人： Yoshiyuki Kurokawa
IPC分类号： G11C11/00
CPC分类号： G11C14/00 , G11C7/1006 , G11C11/412 , G11C19/28 , H01L21/84 , H01L27/0688 , H01L27/105 , H01L27/10852 , H01L27/10873 , H01L27/10894 , H01L27/10897 , H01L27/115 , H01L27/1203 , H01L27/1225
摘要： A storage element capable of retaining data even after supply of power supply voltage is stopped is provided. In the storage element retaining data in synchronization with a clock signal, with the use of a capacitor and a transistor having a channel in an oxide semiconductor layer, the data can be retained even after supply of power supply voltage is stopped. Here, when the transistor is turned off while the level of the clock signal is kept constant before the supply of power supply voltage is stopped, the data can be retained accurately in the capacitor. By applying such a storage element to each of a CPU, a memory, and a peripheral control device, supply of power supply voltage can be stopped in the entire system, so that the power consumption of the entire system can be reduced.
摘要翻译：提供了即使在供给电源电压之后也能够保持数据的存储元件。在与时钟信号同步地保持数据的存储元件中，通过使用具有氧化物半导体层中的沟道的电容器和晶体管，即使在供给电源电压停止之后也可以保持数据。这里，当电源电压停止之前晶体管截止时，时钟信号的电平保持恒定，可以将数据准确地保留在电容器中。通过将这样的存储元件应用于CPU，存储器和外围控制装置中的每一个，可以在整个系统中停止提供电源电压，从而能够降低整个系统的功耗。

126. 发明授权

US08698782B2 Method for driving semiconductor device 有权
标题翻译：半导体装置的驱动方法
公开(公告)号：US08698782B2
公开(公告)日：2014-04-15
申请号：US13329408
申请日：2011-12-19
申请人： Yoshiyuki Kurokawa
发明人： Yoshiyuki Kurokawa
IPC分类号： G06F3/042
CPC分类号： G06F3/0412 , G06F3/0416 , G06F3/0421
摘要： To shorten a period necessary for a plurality of photosensors arranged in a display and data input region to receive light. In a first period, a reset operation is concurrently performed and then a storage operation is concurrently performed in a plurality of first photosensors while a plurality of first light-emitting elements emit light concurrently and a plurality of second light-emitting elements do not emit light. In a second period, the reset operation is concurrently performed and then the storage operation is concurrently performed in a plurality of second photosensors while the plurality of second light-emitting elements emit light concurrently and the plurality of first light-emitting elements do not emit light. In a third period, a selection operation is sequentially performed in the plurality of first photosensors and the selection operation is sequentially performed in the plurality of second photosensors.
摘要翻译：缩短布置在显示器和数据输入区域中的多个光电传感器所需的时间段以接收光。在第一时段中，同时执行复位操作，然后在多个第一光电传感器中同时执行存储操作，同时多个第一发光元件同时发光，并且多个第二发光元件不发光。在第二时段中，同时执行复位操作，然后同时在多个第二光电传感器中执行存储操作，同时多个第二发光元件同时发光，并且多个第一发光元件不发光。在第三时段中，在多个第一光传感器中依次执行选择操作，并且在多个第二光电传感器中依次执行选择操作。

127. 发明授权

US08587479B2 Position information detection system and position information detection method 有权
标题翻译：位置信息检测系统和位置信息检测方法
公开(公告)号：US08587479B2
公开(公告)日：2013-11-19
申请号：US12842581
申请日：2010-07-23
申请人： Yoshiyuki Kurokawa
发明人： Yoshiyuki Kurokawa
IPC分类号： G01S3/02
CPC分类号： G01S5/021 , G01S5/0215
摘要： An object of the present invention is to achieve a position information detection system with high precision when an obstruction and a reflective object exist. A position information detection system includes a reader/writer whose position is known, a first RF chip whose position is known, and a second RF chip attached to an object to be detected; and calculates a distance between the reader/writer and the second RF chip from a first calculated distance between the reader/writer and the first RF chip, which is calculated from a signal intensity of a communication signal transmitted from the reader/writer, detected by the first RF chip, a second calculated distance between the second RF chip and the reader/writer, which is calculated from a signal intensity of a communication signal transmitted from the reader/writer, detected by the second RF chip, and a distance between the reader/writer and the first RF chip.
摘要翻译：本发明的目的是在存在障碍物和反射物体时实现高精度的位置信息检测系统。位置信息检测系统包括其位置已知的读取器/写入器，其位置已知的第一RF芯片和附接到待检测对象的第二RF芯片; 并且从读取器/写入器和第一RF芯片之间的第一计算距离计算读取器/写入器与第二RF芯片之间的距离，该距离是根据从读取器/写入器发送的通信信号的信号强度计算的，第一RF芯片，第二RF芯片和读取器/写入器之间的第二计算距离，其由从第二RF芯片检测到的从读取器/写入器发送的通信信号的信号强度计算，以及第二RF芯片之间的距离读写器和第一个RF芯片。

128. 发明授权

US08487745B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08487745B2
公开(公告)日：2013-07-16
申请号：US11948602
申请日：2007-11-30
申请人： Munehiro Kozuma , Yoshiyuki Kurokawa
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa
IPC分类号： H04Q5/22
CPC分类号： H01M10/46 , H01M10/425 , H01M10/44
摘要： Communication performance of the wireless tag is improved by providing an SRAM provided with an RF battery in the wireless tag provided with a CPU to speed up the CPU system. Moreover, rewriting of data in a memory of a wireless tag provided with a CPU is enabled. An RF battery includes an antenna circuit, a power supply portion, and a power storage device. A function as a non-volatile memory is provided to an SRAM by combining the SRAM and an RF battery.
摘要翻译：通过在设置有CPU的无线标签中提供带有RF电池的SRAM来提高无线标签的通信性能，以加速CPU系统。此外，能够在设置有CPU的无线标签的存储器中重写数据。 RF电池包括天线电路，电源部分和蓄电装置。通过组合SRAM和RF电池，将SRAM作为非易失性存储器提供给SRAM。

129. 发明授权

US08472235B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08472235B2
公开(公告)日：2013-06-25
申请号：US13048291
申请日：2011-03-15
申请人： Munehiro Kozuma , Yoshiyuki Kurokawa
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa
IPC分类号： G11C17/00
CPC分类号： G11C17/12 , H01L27/1225 , H01L29/7869
摘要： An object is reduction in power consumption of a semiconductor device including a memory circuit. In the semiconductor device including a memory circuit, the memory circuit includes a memory cell including a semiconductor element and a memory cell that does not include a semiconductor element in a region defined by a word line and a bit line which intersect with each other. A transistor formed using an oxide semiconductor so as to have extremely low off-state current is used as the semiconductor element, so that the reading precision is improved and thus low voltage operation can be performed. The memory cells store data high or data low. The memory cell comprising a semiconductor element stores minor data of high and low, and the memory cell that does not comprise the semiconductor element stores major data of high and low.
摘要翻译：目的在于减少包括存储电路的半导体器件的功耗。在包括存储器电路的半导体器件中，存储电路包括存储单元，该存储单元包括半导体元件和存储单元，该半导体元件和存储单元在由彼此相交的字线和位线所限定的区域中不包括半导体元件。使用以氧化物半导体形成为具有非常低的截止电流的晶体管作为半导体元件，从而提高读取精度，从而可以进行低电压工作。存储单元存储数据高或数据量低。包括半导体元件的存储单元存储高和低的次要数据，并且不包括半导体元件的存储单元存储高和低的主要数据。

130. 发明授权

US08319641B2 Article management method including shared memory and reader/writers 有权
标题翻译：文章管理方法包括共享内存和读写器
公开(公告)号：US08319641B2
公开(公告)日：2012-11-27
申请号：US11902717
申请日：2007-09-25
申请人： Yoshiyuki Kurokawa
发明人： Yoshiyuki Kurokawa
IPC分类号： G08B21/00
CPC分类号： H04B17/318
摘要： The object of the present invention is to provide an article management method by which detecting the location of an object is performed easily and introduction costs for detecting the location of an object are suppressed. The article management method includes a first RF chip attached to an article, a first reader/writer into which a shared memory portion and a second RF chip are incorporated, and a second reader/writer. The first reader/writer obtains information stored in the first RF chip, the shared memory portion retains the obtained information about the first RF chip, the second RF chip reads out that information about the first RF chip stored in the shared memory portion, the second reader/writer, by the second RF chip, obtains the information about the first RF chip and information stored in the second RF chip and information about the location of the second RF chip.
摘要翻译：本发明的目的是提供一种物品管理方法，通过该方法能够容易地检测物体的位置，并抑制用于检测物体的位置的引入成本。文章管理方法包括：附加到物品的第一RF芯片，并入有共享存储器部分和第二RF芯片的第一读取器/写入器和第二读取器/写入器。第一读取器/写入器获取存储在第一RF芯片中的信息，共享存储器部分保存所获得的关于第一RF芯片的信息，第二RF芯片读出关于存储在共享存储器部分中的关于第一RF芯片的信息，第二RF芯片读取器/写入器通过第二RF芯片获得关于第一RF芯片的信息和存储在第二RF芯片中的信息以及关于第二RF芯片的位置的信息。

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