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121. 发明授权

US06228535B1 Nickel hydroxide positive electrode material exhibiting improved conductivity and engineered activation energy 有权
标题翻译：表现出改进的导电性和工程化活化能的氢氧化镍正极材料
公开(公告)号：US06228535B1
公开(公告)日：2001-05-08
申请号：US09135477
申请日：1998-08-17
申请人： Cristian Fierro , Michael A. Fetcenko , Kwo Young , Stanford R. Ovshinsky , Beth Sommers , Craig Harrison
发明人： Cristian Fierro , Michael A. Fetcenko , Kwo Young , Stanford R. Ovshinsky , Beth Sommers , Craig Harrison
IPC分类号： H01M432
CPC分类号： C01G53/04 , C01G53/006 , C01P2002/77 , C01P2002/78 , C01P2004/03 , C01P2004/32 , C01P2006/40 , H01M4/02 , H01M4/32 , H01M4/52 , H01M10/30 , H01M10/345 , H01M2004/021
摘要： High capacity, long cycle life positive electrode modified nickel hydroxide material for use in an alkaline rechargeable electrochemical cell at least one modifier and has modified activation energy, chemical potential and electrical conductivity. Particle size, particle size distribution, electrical conductivity have been controlled by introducing modifier elements throughout the bulk of the active material and by controlling process parameters.
摘要翻译：高容量，长循环寿命的正极改性氢氧化镍材料，用于碱性可再充电电化学电池中至少一种改性剂，并具有改性的活化能，化学势和电导率。颗粒尺寸，粒度分布，电导率已经通过在整个活性材料的主体中引入改性剂元素并通过控制工艺参数来控制。

122. 发明授权

US06193929B1 High storage capacity alloys enabling a hydrogen-based ecosystem 有权
标题翻译：高储存能力合金，使氢基生态系统成为可能
公开(公告)号：US06193929B1
公开(公告)日：2001-02-27
申请号：US09435497
申请日：1999-11-06
申请人： Stanford R. Ovshinsky , Rosa T. Young
发明人： Stanford R. Ovshinsky , Rosa T. Young
IPC分类号： C22C2300
CPC分类号： B60L11/1898 , B22F1/0096 , B22F2009/041 , B22F2998/10 , B32B15/01 , B60L11/1892 , B60L11/1894 , B60L2200/26 , B60L2240/36 , C01B3/0057 , C01B3/0084 , C01B2203/0233 , C01B2203/0261 , C01B2203/0805 , C01B2203/085 , C22C1/0408 , C22C23/00 , C22C23/02 , C22C23/06 , F17C11/005 , F17C2221/012 , F17C2270/0184 , H01M4/383 , H01M4/46 , H01M8/04014 , H01M8/065 , H01M8/0662 , Y02E60/321 , Y02E60/327 , Y02T90/34 , Y10S420/90 , B22F9/082 , B22F9/04 , B22F9/023
摘要： Hydrogen propelled vehicles and fundamentally new magnesium-based hydrogen storage alloy materials which for the first time make it feasible and practical to use solid state storage and delivery of hydrogen to power internal combustion engine or fuel cell vehicles. These exceptional alloys have remarkable hydrogen storage capacity of well over 6 weight % coupled with extraordinary absorption kinetics such that the alloy powder absorbs 80% of its total capacity within 2 minutes at 300° C.
摘要翻译：氢驱动车辆和基本上新的镁基储氢合金材料，首次使得固态储存和输送氢气到动力内燃机或燃料电池车辆变得可行和实用。这些特殊的合金具有超过6重量％的显着的储氢能力，加上非凡的吸收动力学，使得合金粉末在300℃下在2分钟内吸收其总容量的80％

123. 发明授权

US06177213B1 Composite positive electrode material and method for making same 有权
标题翻译：复合正极材料及其制造方法
公开(公告)号：US06177213B1
公开(公告)日：2001-01-23
申请号：US09135460
申请日：1998-08-17
申请人： Michael A. Fetcenko , Christian Fierro , Stanford R. Ovshinsky , Beth Sommers , Benjamin Reichman , Kwo Young , William Mays
发明人： Michael A. Fetcenko , Christian Fierro , Stanford R. Ovshinsky , Beth Sommers , Benjamin Reichman , Kwo Young , William Mays
IPC分类号： H01M458
CPC分类号： H01M4/626 , H01M4/02 , H01M4/32 , H01M4/52 , H01M4/624 , H01M4/625
摘要： A composite positive electrode material for use in electrochemical cells. The composite material may comprise a particle of positive electrode material, and a conductive material at least partially embedded within the particle of positive electrode material. The material may comprise a particle of positive electrode material, and a nucleating particle at least partially embedded therein.
摘要翻译：用于电化学电池的复合正极材料。复合材料可以包括正极材料的颗粒和至少部分地嵌入正极材料的颗粒内的导电材料。材料可以包括正极材料的颗粒，和至少部分地嵌入其中的成核颗粒。

124. 发明授权

US06143373A Method of synthetically engineering alloys formed of high melting point and high vapor pressure materials 失效
标题翻译：由高熔点和高蒸气压材料组成合成工程合金的方法
公开(公告)号：US06143373A
公开(公告)日：2000-11-07
申请号：US584642
申请日：1996-01-11
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： D01D5/00 , D01F9/08 , C23C14/08
CPC分类号： D01D5/088 , D01F9/08
摘要： A process for fabricating synthetic materials by atomic alloying of a host material. Energetic high vapor pressure modifier elements or species are introduced into the host matrix of a fluidic precursor high metling point material so as to obtain an engineered material characterized by a range of controllable optical electrical, thermal, chemical or mechanical properties not exhibited by either the modifier or the precursor material. The method for forming a synthetically engineered material by forming a fluid host matrix material on a moving substrate surface, such as a wheel; directing a plurality of discrete fluid modifier materials, activated or unactivated, in a stream, as from a nozzle, toward the substrate surface in a direction such that it converges with the host matrix material to produce a ribbon of modified material.
摘要翻译：通过主体材料的原子合金化制造合成材料的方法。能量高的蒸汽压力调节剂元件或物质被引入到流体前驱体高熔点材料的主体基质中，以获得工程材料，其特征在于一系列可控光学电学，热学，化学或机械性能，或前体材料。通过在移动的基底表面（例如轮子）上形成流体宿主基质材料来形成合成工程材料的方法; 将多个活化或未活化的离散流体调节剂材料沿流动方向从主体基质材料向主体基质材料收敛，从而从喷嘴流向基底表面，以产生改性材料带。

125. 发明授权

US6141241A Universal memory element with systems employing same and apparatus and method for reading, writing and programming same 有权
标题翻译：具有采用相同系统的通用存储器元件以及用于读取，写入和编程的装置和方法
公开(公告)号：US6141241A
公开(公告)日：2000-10-31
申请号：US289713
申请日：1999-04-12
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： G11C13/00 , G11C7/08 , G11C11/00 , G11C11/34 , G11C11/56 , G11C13/02 , G11C16/02 , G11C16/10 , G11C17/14 , H01L27/24 , H04K1/02
CPC分类号： G11C11/56 , G11C11/54 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0071 , G11C2213/72
摘要： A universal memory element having multi-level, non-detectable states and methods and apparatus for programming the same, and methods and applications embodying the same in neural networks, artificial intelligence and data storage systems. The universal memory element is programmed by applying one or more sub-interval energy pulses insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify the memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.
摘要翻译：具有多级，不可检测状态的通用存储器元件及其编程方法和装置，以及在神经网络，人造智能和数据存储系统中体现其的方法和应用。通过施加一个或多个不足以将存储元件从所述高电阻状态切换到所述低电阻状态的子间隔能量脉冲来编程通用存储器元件，但是足以修改存储器材料，使得附加能量脉冲的累积导致存储器元件从所述高电阻状态切换到所述低电阻状态。

126. 发明授权

US5948564A Compositionally and structurally disordered multiphase nickel hydroxide positive electrode containing modifiers 失效
公开(公告)号：US5948564A
公开(公告)日：1999-09-07
申请号：US782863
申请日：1997-01-13
申请人： Stanford R. Ovshinsky , Michael A. Fetcenko , Srinivasan Venkatesan , Arthur Holland
发明人： Stanford R. Ovshinsky , Michael A. Fetcenko , Srinivasan Venkatesan , Arthur Holland
IPC分类号： H01M4/26 , H01M4/28 , H01M4/32 , H01M4/52 , H01M4/80 , H01M10/34
CPC分类号： H01M10/345 , H01M4/26 , H01M4/28 , H01M4/32 , H01M4/52 , H01M4/80
摘要： A positive electrode for use in alkaline rechargeable electrochemical cells comprising: a material comprising a compositionally and structurally disordered multiphase nickel hydroxide host matrix which includes at least one modifier chosen from the group consisting of F, Li, Na, K, Mg, Ba, La, Se, Nd, Pr, Y, Co, Al, Cr, Mn, Fe, Cu, Zn, Sc, Sn, Sb, Te, Bi, Ru, and Pb. A process for forming a high loading uniformly distributed multiphase substantially nitrate free sintered positive electrode for use in an alkaline rechargeable electrochemical cell, the process comprising: (1) fabricating sintered electrode material by forming a slurry of nickel powder, water, carboxymethylcellulose binder, methyl cellulose binder, and a poly(ethylene oxide) polymer; spreading the slurry on a preoxidized perforated nickel substrate; drying the slurry; and sintering the slurry; (2) impregnating the sintered electrode material using multiple impregnation cycles to attain high loading, where each impregnation cycle comprises the steps of: placing the sintered electrode material on a rack; dipping the rack into nickel nitrate; allowing the rack to drip dry; dipping the dried rack into NaOH solution; spraying the rack in a first tank with deionized water overflowing from a second tank; dipping the rack in the second tank filled with deionized water overflowing from a third tank; dipping the rack in the third tank filling with deionized water at a rate of 8-10 gpm; drying the rack; and flipping the rack to attain uniform deposition of material; where in the median dip cycle and in the final dip cycle of the multiple impregnation cycles, the step of dipping the rack into nickel nitrate is replaced by a step of dipping the rack into cobalt nitrate to produce an enriched cobalt surface; and (3) forming the impregnated sinter into positive electrode material by presoaking the impregnated sinter in NaOH presoak tanks to substantially eliminate nitrates; brushing the presoaked impregnated sinter in a surface brushing station; charging the brushed impregnated sinter; discharging the charged impregnated sinter; rinsing the discharged impregnated sinter; and drying the rinsed impregnated sinter to complete the formation of positive electrode material.

127. 发明授权

US5856047A High power nickel-metal hydride batteries and high power electrodes for use therein 失效
标题翻译：大功率镍氢电池和大功率电极用于其中
公开(公告)号：US5856047A
公开(公告)日：1999-01-05
申请号：US792358
申请日：1997-01-31
申请人： Srinivasan Venkatesan , Benjamin Reichman , Stanford R. Ovshinsky , Binay Prasad , Dennis A. Corrigan
发明人： Srinivasan Venkatesan , Benjamin Reichman , Stanford R. Ovshinsky , Binay Prasad , Dennis A. Corrigan
IPC分类号： B60K6/28 , B60K6/46 , B60K6/48 , H01M4/24 , H01M4/66 , H01M4/80 , H01M10/34
CPC分类号： B60K6/28 , B60K6/46 , B60K6/48 , H01M4/24 , H01M4/661 , H01M4/80 , H01M4/801 , H01M4/805 , H01M10/345 , H01M4/808 , Y02E60/124 , Y02T10/6217 , Y02T10/6221 , Y10S903/907
摘要： Nickel-metal hydride batteries and electrodes are capable of increased power output and recharge rates. The electrodes and batteries produced therefrom exhibit increased internal conductance. The positive and negative electrodes may be formed by pressing powdered metal-hydride active materials into porous metal substrates. The porous metal substrates are formed from copper, copper-plated nickel, or a copper-nickel alloy, and may be additionally plated with a material which is electrically conductive and resistant to corrosion in the battery environment, such as nickel.
摘要翻译：镍氢电池和电极能够提高功率输出和充电速率。由此产生的电极和电池显示增加的内部电导。正极和负极可以通过将粉末状的金属氢化物活性材料压制成多孔金属基体而形成。多孔金属基板由铜，镀铜的镍或铜镍合金形成，并且可以另外电镀导电且耐电池环境如镍的腐蚀性的材料。

128. 发明授权

US5687112A Multibit single cell memory element having tapered contact 失效
标题翻译：具有锥形接触的多位单体存储元件
公开(公告)号：US5687112A
公开(公告)日：1997-11-11
申请号：US635442
申请日：1996-04-19
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： G11C16/02 , G11C11/00 , G11C11/56 , H01L27/10 , H01L27/105 , H01L45/00
CPC分类号： G11C13/0069 , G11C11/56 , G11C11/5678 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/1625 , G11C13/0004 , G11C2013/008 , G11C2213/52
摘要： An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.
摘要翻译：一种具有多位存储能力的电操作的，直接可重写的多位单电池硫族化物存储元件，具有至少一个用于提供电输入信号以将存储元件设置为所选电阻值的触点，第二触点逐渐变细到与记忆元素。以这种方式，锥形接触有助于限定通过存储元件的传导路径的尺寸和位置。

129. 发明授权

US5567241A Method and apparatus for the improved microwave deposition of thin films 失效
标题翻译：改进薄膜微波沉积的方法和装置
公开(公告)号：US5567241A
公开(公告)日：1996-10-22
申请号：US442146
申请日：1995-05-16
申请人： David V. Tsu , Rosa Young , Stanford R. Ovshinsky
发明人： David V. Tsu , Rosa Young , Stanford R. Ovshinsky
IPC分类号： C23C16/511 , C23C16/517 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32211 , C23C16/511 , C23C16/517 , H01J37/321 , H01J37/32192 , H01J37/32678 , H01J2237/3321
摘要： A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atmospheric pressure region. The improved feed-through is designed to match the impedance of the microwave wave guide in the atmospheric pressure region and the improved linear microwave applicator. A second aspect of the present invention is an improved linear microwave applicator for uniformly coupling 95% or more of the microwave energy input thereto into an elongated plasma zone. The applicator includes curved microwave reflector panels which are used to tune the uniformity of the radiated microwave energy along the length of the linear applicator. A third aspect of the present invention is a microwave enhanced chemical vapor deposition method for depositing thin film material. The method includes a step of intensifying the kinetic/thermal energy of the electrically neutral species in the plasma by intensifying the kinetic/thermal energy of the ions in the plasma and thereby, through ion-neutral collisions, intensifying the kinetic/thermal energy of the electrically neutral species. The step of intensifying the kinetic/thermal energy of the ions in the plasma includes subjecting the plasma to either a very low frequency alternating current electrical bias or an alternating polarity magnetic field, the frequency of thereof being less than about 100 kHz.
摘要翻译：本发明的第一方面是一种改进的微波真空馈通装置，用于将微波能量从大气压力区域中的微波波导耦合到亚大气压区域中的细长线性微波施加器。改进的馈通被设计成匹配大气压区域中的微波波导的阻抗和改进的线性微波施加器。本发明的第二方面是一种改进的线性微波施加器，用于将输入到其中的95％或更多的微波能量均匀地耦合到细长的等离子体区域中。施加器包括弯曲的微波反射器面板，其用于调节辐射的微波能量沿着线性施加器的长度的均匀性。本发明的第三方面是用于沉积薄膜材料的微波增强化学气相沉积方法。该方法包括通过增强等离子体中的离子的动能/热能来增强等离子体中的电中性物质的动力学/热能，从而通过离子中性碰撞强化其中的动能/热能电中性物种。增强等离子体中离子的动能/热能的步骤包括使等离子体经受非常低频的交流电偏压或交替极性磁场，其频率小于约100kHz。

130. 发明授权

US5543737A Logical operation circuit employing two-terminal chalcogenide switches 失效
标题翻译：采用二端硫属化物开关的逻辑运算电路
公开(公告)号：US5543737A
公开(公告)日：1996-08-06
申请号：US386902
申请日：1995-02-10
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H03K19/02 , H03K19/00
CPC分类号： H03K19/02 , G11C13/0004
摘要： A logic family employing a plurality of two-terminal chalcogenide switches as logic gates therein. Preferably the two-terminal chalcogenide switches are chalcogenide threshold switches. The logic can employ multi-phase clocking such as four-phase clocking.
摘要翻译：一种采用多个两端硫族化物开关作为逻辑门的逻辑系列。优选地，两末端硫族化物开关是硫族化物阈值开关。该逻辑可以采用多相时钟，如四相时钟。

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