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121. 发明公开

EP2695207A1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权转让
公开(公告)号：EP2695207A1
公开(公告)日：2014-02-12
申请号：EP12708853.2
申请日：2012-03-15
申请人： Osram Opto Semiconductors Gmbh
发明人： HÖPPEL, Lutz
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/20 , H01L33/22 , H01L33/54 , H01L33/56
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： The invention relates to an optoelectronic semiconductor chip comprising a semiconductor layer sequence (2) and a carrier substrate (10), wherein a first (7) and a second electrical contact layer (8) are arranged at least in some areas between the carrier substrate (10) and the semiconductor layer sequence (2) and are electrically insulated from each other by an electrically insulating layer (9), and having a mirror layer (6) arranged between the semiconductor layer sequence (2) and the carrier substrate (10). The semiconductor chip (1) comprises a transparent encapsulating layer (13) covering side surfaces (26) of the semiconductor layer sequence (2), side faces (16) of the mirror layer (6), and side surfaces (19) of the electrically insulating layer (9) facing toward the side surfaces (15) of the semiconductor chip (1).
摘要翻译：本发明涉及包括半导体层序列（2）和载体衬底（10）的光电子半导体芯片，其中第一电接触层（7）和第二电接触层（8）至少在载体衬底（10）和半导体层序列（2）之间并且通过电绝缘层（9）彼此电绝缘，并且具有布置在半导体层序列（2）和载体衬底（10）之间的镜层（6））。半导体芯片（1）包括覆盖半导体层序列（2）的侧表面（26），镜层（6）的侧表面（16）和侧表面（19）的侧表面（19）的透明封装层电绝缘层（9），面向半导体芯片（1）的侧表面（15）。

122. 发明公开

EP2652785A1 TRÄGER FÜR EINEN OPTOELEKTRONISCHEN HALBLEITERCHIP UND HALBLEITERCHIP 有权
标题翻译：欧洲红十字国际委员会HALBLEITERCHIP UND HALBLEITERCHIP
公开(公告)号：EP2652785A1
公开(公告)日：2013-10-23
申请号：EP11794094.0
申请日：2011-12-05
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz
IPC分类号： H01L23/498 , H01L25/16 , H01L33/62 , H01L33/48
CPC分类号： H01L33/48 , H01L23/49827 , H01L25/167 , H01L33/483 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A support for an optoelectronic semiconductor chip is specified, wherein the support (1) has a support body (2) with a first main face (21) and a second main face (22), which is opposite the first main face (21). The support body (2) has at least one electrical plated-through hole (31) made in it which extends from the first main face (21) to the second main face (22). The first main face (21) has an insulating layer (4) arranged on it which covers only regions of the electrical plated-through hole (31). In addition, an optoelectronic semiconductor chip (10) having such a support (1) is specified.
摘要翻译：光电子半导体芯片的支撑体包括具有第一主面和与第一主面相对的第二主面的支撑体，至少一个从第一主面向第二主面延伸的电镀通孔，支撑体和布置在第一主面上的绝缘层，绝缘层仅在区域中覆盖电穿孔。

123. 发明公开

EP2572384A1 OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZU DESSEN HERSTELLUNG 审中-公开
公开(公告)号：EP2572384A1
公开(公告)日：2013-03-27
申请号：EP11743182.5
申请日：2011-04-29
申请人： OSRAM Opto Semiconductors GmbH
发明人： BERGBAUER, Werner , HÖPPEL, Lutz , DRECHSEL, Philipp , KÖLPER, Christopher , STRASSBURG, Martin , RODE, Patrick
IPC分类号： H01L31/0236
CPC分类号： H01L33/02 , H01L31/02 , H01L31/02327 , H01L31/02363 , H01L31/18 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/24 , Y02E10/50
摘要： The invention relates to an optoelectronic semiconductor chip (10), which has a stack (2) of semiconductor layers and a radiation outlet surface or radiation inlet surface (3). The stack (2) of semiconductor layers comprises an active layer (2a), which is suitable for producing or receiving electromagnetic radiation. A plurality of nanostructures (4) that at least partially have at least one sub-structure (41, 42) is arranged in the stack (2) of semiconductor layers and/or on the radiation outlet surface or radiation inlet surface (3). The invention further relates to a method for producing such an optoelectronic semiconductor chip (10).
摘要翻译：光电子半导体芯片技术领域本发明涉及一种光电子半导体芯片（10），其具有半导体层堆叠（2）和辐射出口表面或辐射入口表面（3）。半导体层的叠层（2）包括适于产生或接收电磁辐射的有源层（2a）。在半导体层堆叠（2）中和/或在辐射出口表面或辐射入口表面（3）上布置多个至少部分具有至少一个子结构（41,42）的纳米结构（4）。本发明还涉及用于制造这种光电子半导体芯片（10）的方法。

124. 发明公开

EP2452373A1 OPTOELEKTRONISCHES BAUELEMENT 审中-公开
标题翻译：光电组件
公开(公告)号：EP2452373A1
公开(公告)日：2012-05-16
申请号：EP10728256.8
申请日：2010-07-06
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz
IPC分类号： H01L33/48 , H01L33/62
CPC分类号： H01L33/486 , H01L25/167 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic component, comprising a semiconductor body (1) and a carrier substrate (6), which is connected to the semiconductor body (1) by way of a solder joint (7), is provided, wherein the carrier substrate (6) comprises a first aperture (8a) and a second aperture (8b), through which a first electrically conductive connecting layer (9a) and a second electrically conductive connecting layer (9b) are guided from a first primary surface (11) of the carrier substrate (6) facing away from the semiconductor body (1) to a second primary surface (12) of the carrier substrate facing away from the semiconductor body (1), the carrier substrate (6) is made of a semiconductor material and has side flanks (10), which run obliquely to the primary surfaces (11, 12) of the carrier substrate (6) at least in a first partial region (10a), wherein the side flanks (10) are provided with an electrically insulating layer (13) in the first partial region (10a).

125. 发明公开

EP2351079A1 STRAHLUNGSEMITTIERENDER HALBLEITERCHIP 有权
公开(公告)号：EP2351079A1
公开(公告)日：2011-08-03
申请号：EP09767932.8
申请日：2009-10-29
申请人： OSRAM Opto Semiconductors GmbH
发明人： MOOSBURGER, Jürgen , VON MALM, Norwin , RODE, Patrick , HÖPPEL, Lutz , ENGL, Karl
IPC分类号： H01L25/16 , H01L27/15 , H01L33/38 , H01L33/08
CPC分类号： H01L27/15 , H01L25/167 , H01L33/005 , H01L33/02 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip (1), which has a carrier (5) and a semiconductor body (2) having a semiconductor layer sequence. An emission region (23) and a protective diode region (24) are produced in the semiconductor chip (2) having the semiconductor layer sequence. The semiconductor layer sequence has an active region (20) provided for generating radiation, which is disposed between a first semiconductor layer (21) and a second semiconductor layer (22). The first semiconductor layer (21) is arranged on the side of the active region (20) that faces away from the carrier (5). The emission region (23) has a recess (25), which extends through the active region. In the emission region (23), the first semiconductor layer (21) is connected to a first connecting layer (31) in an electrically conductive manner, wherein the first connecting layer extends in the recess (25) from the first semiconductor layer (21) in the direction of the carrier (5). In the protective diode region (24), the first connecting layer is connected to the second semiconductor layer (22) in an electrically conductive manner. Furthermore, a method for producing a radiation-emitting semiconductor chip is provided.
摘要翻译：本发明涉及一种发射辐射的半导体芯片（1），其具有载体（5）和具有半导体层序列的半导体本体（2）。在具有半导体层序列的半导体芯片（2）中产生发射区域（23）和保护二极管区域（24）。半导体层序列具有设置用于产生辐射的有源区（20），其设置在第一半导体层（21）和第二半导体层（22）之间。第一半导体层（21）布置在背离载体（5）的有源区（20）的一侧上。发射区域（23）具有延伸穿过有源区域的凹部（25）。在发光区域（23）中，第一半导体层（21）以导电的方式连接到第一连接层（31），其中第一连接层从第一半导体层（21））在载体（5）的方向上。在保护二极管区域（24）中，第一连接层以导电的方式连接到第二半导体层（22）。此外，提供了一种用于制造发射辐射的半导体芯片的方法。

126. 发明公开

EP2248192A1 OPTOELEKTRONISCHER HALBLEITERKÖRPER MIT TUNNELÜBERGANG UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 审中-公开
标题翻译：与隧道过渡和方法光电子半导体本体，其制造方法
公开(公告)号：EP2248192A1
公开(公告)日：2010-11-10
申请号：EP09715687.1
申请日：2009-02-26
申请人： OSRAM Opto Semiconductors GmbH
发明人： STRASSBURG, Martin , HÖPPEL, Lutz , SABATHIL, Matthias
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L29/88 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/3095 , H01S5/32341 , H01L2924/00
摘要： The invention specifies an optoelectronic semiconductor body having an epitaxial semiconductor layer sequence which has a tunnel junction (2) and an active layer (4) which is intended to emit electromagnetic radiation. The tunnel junction has an intermediate layer (23) between an n-type tunnel junction layer (21) and a p-type tunnel junction layer (22). In one embodiment, the intermediate layer has an n-type barrier layer (231) facing the n-type tunnel junction layer, a p-type barrier layer (233) facing the p-type tunnel junction layer and a middle layer (232). The material composition of the middle layer differs from the material composition of the n-type barrier layer and the p-type barrier layer. In another embodiment, the intermediate layer (23) is alternatively or additionally deliberately provided with defects (6). A method for producing such an optoelectronic semiconductor body is also specified.

127. 发明公开

EP2245667A1 MONOLITHISCHER, OPTOELEKTRONISCHER HALBLEITERKÖRPER UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN的单片机，OPTOELEKTRONISCHERHALBLEITERKÖRPER
公开(公告)号：EP2245667A1
公开(公告)日：2010-11-03
申请号：EP09714749.0
申请日：2009-02-25
申请人： OSRAM Opto Semiconductors GmbH
发明人： ENGL, Karl , SINGER, Frank , RODE, Patrick , HÖPPEL, Lutz , STRASSBURG, Martin
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L27/156 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an optoelectronic semi-conductor body comprising a semi-conductor layer sequence that is divided into at least two electrically insulated part segments. In each part area, the semi-conductor layer sequence comprises an active layer. Also, at least three electric contact pads are provided. One first conductor plane contacts the first of the at least two part segments and the first contact pad. A second conductor plane contacts the second of the at least two part segments and a second contact pad. A third conductor plane joins both part segments together and contacts the third contact pad. Also, the conductor planes are respectively arranged opposite a first main side and said first main side is provided for the emission of generated electromagnetic radiation.
摘要翻译：光电子半导体主体包括半导体层序列，其被细分成至少两个电隔离的子区段。半导体层序列在每个子区域中具有活性层。此外，提供至少三个电接触垫。第一线路级别与至少两个子片段中的第一个以及与第一接触焊盘接触。第二线路级与第二接触垫接触至少两个子段中的第二线段。第三行电平将两个子段彼此连接并与第三个接触焊盘接触。此外，线路电平各自布置成与第一主面相对，其中第一主面面用于发射产生的电磁辐射。

128. 发明公开

EP2149159A1 OPTOELEKTRONISCHER HALBLEITERKÖRPER UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 有权
标题翻译： OPTOELEKTRONISCHERHALBLEITERKÖRPERUND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN
公开(公告)号：EP2149159A1
公开(公告)日：2010-02-03
申请号：EP08748775.7
申请日：2008-04-24
申请人： OSRAM Opto Semiconductors GmbH
发明人： ENGL, Karl , RODE, Patrick , HÖPPEL, Lutz , SABATHIL, Matthias
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence (2) comprising an active layer (23) suitable for generating electromagnetic radiation and a first and a second electrical connection layer (4, 6), wherein the semiconductor body is intended for the emission of electromagnetic radiation from a front side, the first and second electrical connection layers being located on a rear side opposite the front side and electrically insulated from each other by means of a separating layer (5), the first electrical connection layer (4), second electrical connection layer (6), and the separating layer (5) laterally overlapping each other, and a partial area of the second electrical connection layer (6) extending from the rear side through a penetration (3) through the active layer (23) in the direction of the front side. The invention further relates to a method for producing such an opto-electronic semiconductor body.
摘要翻译：本发明涉及一种具有半导体层序列（2）的光电半导体本体，所述半导体层序列包括适于产生电磁辐射的有源层（23）以及第一和第二电连接层（4,6），其中所述半导体本体是用于从前侧发射电磁辐射，所述第一和第二电连接层位于与所述前侧相对的后侧上并且借助于分离层（5）彼此电绝缘，所述第一电连接层，所述第二电连接层（6）和所述分离层（5）彼此横向地重叠，并且所述第二电连接层（6）的部分区域从所述后侧穿过所述穿透部有源层（23）在前侧的方向上。本发明还涉及用于制造这种光电半导体本体的方法。

129. 发明授权

EP3345225B1 OPTOELEKTRONISCHES HALBLEITERBAUELEMENT UND VERFAHREN ZU DESSEN HERSTELLUNG 有权转让
公开(公告)号：EP3345225B1
公开(公告)日：2019-11-27
申请号：EP16756681.9
申请日：2016-08-22
申请人： OSRAM Opto Semiconductors GmbH
发明人： PERZLMAIER, Korbinian , KASPRZAK-ZABLOCKA, Anna , HÖPPEL, Lutz , LEIRER, Christian
IPC分类号： H01L33/48 , H01L33/64 , H01L33/62

130. 发明授权

EP2695207B1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权转让
公开(公告)号：EP2695207B1
公开(公告)日：2019-08-07
申请号：EP12708853.2
申请日：2012-03-15
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz
IPC分类号： H01L33/44 , H01L33/40 , H01L33/54 , H01L33/38 , H01L33/22 , H01L33/00

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