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121. 发明申请

US20080242574A1 Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition 有权
标题翻译：金属和电介质兼容的牺牲防反射涂层清洁和去除组合物
公开(公告)号：US20080242574A1
公开(公告)日：2008-10-02
申请号：US11916891
申请日：2006-06-07
申请人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , David W. Minsek
发明人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , David W. Minsek
IPC分类号： G03F7/42
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/263 , C11D7/265 , C11D7/28 , C11D7/34 , C11D7/50 , G03F7/423
摘要： A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.
摘要翻译：一种液体去除组合物和从其上具有其的基材去除牺牲抗反射涂层（SARC）材料的方法。液体去除组合物包括至少一种含氟化物的化合物，至少一种有机溶剂，任选的水和任选的至少一种螯合剂。该组合物在集成电路的制造中至少部分去除SARC材料，同时对基板上的金属物质（例如铝，铜和钴合金）进行最小蚀刻，并且不损坏在半导体结构中使用的低k电介质材料。

122. 发明申请

US20080233276A1 COPPER (I) COMPOUNDS USEFUL AS DEPOSITION PRECURSORS OF COPPER THIN FILMS 有权
标题翻译： COPPER（I）化合物作为铜薄膜沉积前体有用
公开(公告)号：US20080233276A1
公开(公告)日：2008-09-25
申请号：US12119362
申请日：2008-05-12
申请人： Chongying Xu , Alexander Borovik , Thomas H. Baum
发明人： Chongying Xu , Alexander Borovik , Thomas H. Baum
IPC分类号： C23C16/06 , C09D5/00
CPC分类号： C07C257/14 , C07F1/005 , C23C16/18
摘要： Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.
摘要翻译：用于在制造半导体器件中形成铜薄膜的铜（I）脒前体，以及使用化学气相沉积或原子层沉积工艺在基片上沉积铜（I）脒前体的方法。

123. 发明授权

US07294528B2 Supercritical fluid-assisted deposition of materials on semiconductor substrates 有权
标题翻译：材料在半导体衬底上的超临界流体辅助沉积
公开(公告)号：US07294528B2
公开(公告)日：2007-11-13
申请号：US11078211
申请日：2005-03-11
申请人： Chongying Xu , Thomas H. Baum
发明人： Chongying Xu , Thomas H. Baum
IPC分类号： H01L51/40
CPC分类号： C23C18/1204 , C23C18/122 , C23C18/125 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/288 , H01L21/3122 , H01L21/31695 , H01L21/76841 , H01L21/76877
摘要： Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
摘要翻译：材料在衬底上的超临界流体辅助沉积，例如用于集成电路器件制造的半导体衬底。使用含有待沉积在基材表面上的材料的前体的超临界流体基组合物进行沉积。这种方法允许使用否则将完全不适合于沉积应用的前体，因为对于气相沉积工艺缺乏必要的挥发性和传输特性。

124. 发明授权

US07011716B2 Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products 失效
公开(公告)号：US07011716B2
公开(公告)日：2006-03-14
申请号：US10249658
申请日：2003-04-29
申请人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
发明人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
IPC分类号： B08B3/08 , H01L21/302 , B23G1/34
CPC分类号： H01L21/02101
摘要： Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

125. 发明授权

US06735978B1 Treatment of supercritical fluid utilized in semiconductor manufacturing applications 失效
标题翻译：半导体制造应用中超临界流体的处理
公开(公告)号：US06735978B1
公开(公告)日：2004-05-18
申请号：US10364558
申请日：2003-02-11
申请人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
发明人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
IPC分类号： F25D100
CPC分类号： C01B32/50 , Y02P20/544
摘要： A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.
摘要翻译：一种用于利用和处置超临界流体组合物的系统和方法，其中超临界流体（SCF）组合物在诸如半导体制造厂的SCF使用过程设备中使用。超临界流体组合物从处理设备中取出，其中含有至少一种相对于超临界流体组合物的进一步处置是无关的组分。将取出的超临界流体组合物转化为加压液体，其被处理以至少部分地从其中除去外来成分。在其进一步的处置中，去除加压液体的外来成分可以再转化为超临界状态，以再循环至使用SCF的工艺设备，或者在超临界流体如CO2的情况下，可将其气化并排放到大气中。

126. 发明授权

US06692546B2 Chemical mechanical polishing compositions for metal and associated materials and method of using same 有权
标题翻译：金属及相关材料的化学机械抛光组合物及其使用方法
公开(公告)号：US06692546B2
公开(公告)日：2004-02-17
申请号：US09932415
申请日：2001-08-17
申请人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
IPC分类号： C09G102
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
摘要翻译：一种化学机械抛光浆料组合物和使用该浆料组合物抛光铜，阻挡材料和电介质材料的方法，其包括第一和第二步浆料。第一步浆料对铜的去除率高，阻隔材料的去除率低。第二步浆料对阻隔材料的去除率高，铜和介电材料的去除率低。第一浆液至少包含有机聚合物研磨剂。

127. 发明授权

US06417369B1 Pyrazolate copper complexes, and MOCVD of copper using same 失效
标题翻译：吡唑铜络合物和铜的MOCVD使用相同
公开(公告)号：US06417369B1
公开(公告)日：2002-07-09
申请号：US09524063
申请日：2000-03-13
申请人： Chongying Xu , Thomas H. Baum , Ziyun Wang
发明人： Chongying Xu , Thomas H. Baum , Ziyun Wang
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07F1/08 , C07F7/0803
摘要： Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.
摘要翻译：用于在半导体集成电路中形成铜的吡唑类前体组合物，例如半导体器件结构中的互连金属化，作为用于电镀的粘合种子层，用于沉积薄膜记录头并用于封装部件的电路化。吡唑铜前体组合物包括氟化和非氟化的吡唑盐铜（I）络合物及其路易斯碱加合物。这种前体有利地用于在基底上的铜或含铜材料的液体输送化学气相沉积。

128. 发明授权

US06399208B1 Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films 失效
标题翻译：用于化学气相沉积形成的源试剂组合物和方法或ZR / HF硅酸盐栅极电介质薄膜
公开(公告)号：US06399208B1
公开(公告)日：2002-06-04
申请号：US09414133
申请日：1999-10-07
申请人： Thomas H. Baum , Witold Paw
发明人： Thomas H. Baum , Witold Paw
IPC分类号： B32B900
CPC分类号： C23C16/401 , C09D1/00
摘要： A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, wherein M=Zr or Hf and (2) a second precursor metal compound or complex including an aliphatic alcoxide ligand coordinated to a metal M, wherein M=Zr or Hf, wherein the relative proportions of the first and second precursors relative to one another are employed to controllably establish the M/Si ratio in the deposited silicate thin film. The precursor composition may contain a solvent medium, so that the composition is adapted for liquid delivery CVD, to form stable thin-film gate dielectrics for fabrication of microelectronic devices.
摘要翻译：用于在衬底上形成锆和/或硅酸铪膜的前体组合物，例如通过化学气相沉积（CVD）。说明性的前体组合物包括（1）第一前体金属化合物或络合物，其包含与金属M配位的硅烷醇（硅氧烷）配体，其中M = Zr或Hf，和（2）第二前体金属化合物或络合物，包括脂族醇酸配体与金属M配位，其中M = Zr或Hf，其中第一和第二前体相对于彼此的相对比例用于可控地建立沉积的硅酸盐薄膜中的M / Si比。前体组合物可以含有溶剂介质，使得组合物适于液体输送CVD，以形成用于制造微电子器件的稳定的薄膜栅极电介质。

129. 发明授权

US06340769B1 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor 有权
标题翻译：铱基材料和基体上的结构的制备方法及其铱源试剂
公开(公告)号：US06340769B1
公开(公告)日：2002-01-22
申请号：US09453995
申请日：1999-12-03
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C07F1500
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/02071 , H01L21/32136 , H01L28/55 , Y10S438/906
摘要： A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, and nitrogen oxide. Useful precursors include Lewis base stabilized Ir(I) &bgr;-diketonates and Lewis base stabilized Ir(I) &bgr;-ketoiminates. The iridium deposited on the substrate may then be etched for patterning an electrode, followed by depositing on the electrode a dielectric or ferroelectric material, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FRAMs, hybrid systems, smart cards and communication systems.
摘要翻译：一种在含有铱的膜的基底上形成含铱膜的方法，该方法是通过分解前体并在氧化环境中将铱沉积在氧化环境环境中的方法，其可分解成在基底上沉积铱氧气，臭氧，空气和氮氧化物等氧化气体。有用的前体包括路易斯碱稳定的Ir（I）β-二酮酸酯和路易斯碱稳定的Ir（I）β-酮缩酮。然后可以蚀刻沉积在衬底上的铱以图案化电极，随后在电极上沉积电介质或铁电材料，用于制造诸如DRAM，FRAM，混合系统，智能卡和通信系统的薄膜电容器半导体器件。

130. 发明授权

US06254792B1 Isotropic dry cleaning process for noble metal integrated circuit structures 失效
标题翻译：贵金属集成电路结构各向同性干洗工艺
公开(公告)号：US06254792B1
公开(公告)日：2001-07-03
申请号：US09093291
申请日：1998-06-08
申请人： Peter C. Van Buskirk , Frank DiMeo, Jr. , Peter C. Kirlin , Thomas H. Baum
发明人： Peter C. Van Buskirk , Frank DiMeo, Jr. , Peter C. Kirlin , Thomas H. Baum
IPC分类号： C23F112
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/02071 , H01L21/32136 , H01L28/55 , Y10S438/906
摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.
摘要翻译：通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。

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