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121. 发明申请

WO1992007805A1 ALUMINUM NITRIDE SINTER AND PRODUCTION THEREOF 审中-公开
标题翻译：氮化铝烧结及其生产
公开(公告)号：WO1992007805A1
公开(公告)日：1992-05-14
申请号：PCT/JP1991001474
申请日：1991-10-29
申请人： SUMITOMO ELECTRIC INDUSTRIES LTD. , YAMAKAWA, Akira , SOGABE, Kouiti , SHIMODA, Kohei , MIYAKE, Masaya
发明人： SUMITOMO ELECTRIC INDUSTRIES LTD.
IPC分类号： C04B35/58
CPC分类号： C04B35/581
摘要： A sinter which is based on aluminum nitride, contains a titanium compound, is black, and has a transmittance of 10 % or less as regards the light with a wavelength of 500 to 650 nm and a thermal conductivity of 120 W/m.K or above. It is produced by molding a mixture of aluminum nitride powder with a titanium compound in an amount of 0.05 to 5 wt% in terms of titanium element, a sintering aid and optionally further a compound which generates carbon by thermal decomposition, heating the molded article in a vacuum, air, nitrogen, hydrogen or a mixture thereof to a residual carbon content of 2.0 wt% or less, and sintering in a nitrogen-containing nonoxidative atmosphere at 1,600 °C or above. Examples of the titanium compound to be used include Ti¿n?O2n-1, a solid solution comprising TinO2n-1 and nitrogen partially dissolved therein, wherein n is 1 or above, and TiNxOy wherein 0

122. 发明申请

WO1992005904A1 HARD MATERIAL CLAD WITH DIAMOND, THROWAWAY CHIP, AND METHOD OF MAKING SAID MATERIAL AND CHIP 审中-公开
标题翻译：硬质材料和金刚石材料和芯片的制作方法
公开(公告)号：WO1992005904A1
公开(公告)日：1992-04-16
申请号：PCT/JP1991001359
申请日：1991-10-04
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , OMORI, Naoya , NOMURA, Toshio
发明人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
IPC分类号： B23B27/14
CPC分类号： C04B41/009 , B23B27/141 , B23B27/148 , B23B51/00 , B23B51/0009 , B23B51/02 , B23B51/048 , B23B2200/081 , B23B2251/02 , B23B2251/48 , B23B2251/50 , C04B41/5002 , C04B41/85 , C23C16/02 , C23C16/0227 , C23C16/0272 , C23C16/271 , C23C16/274 , Y10T428/24355 , Y10T428/24479 , Y10T428/265 , Y10T428/30 , C04B41/0072 , C04B41/4529 , C04B35/584
摘要： A diamond-clad hard material having high adhesion strength to a base material and a diamond-clad throwaway chip capable of cutting various kinds of light metals such as Al-Si alloy at high speed for a long period of time, wherein the diamond-clad hard material is composed of a material to be sintered which is constituted mainly of Si3N4, has a sintered skin at least at a part thereof, and is clad with diamond at least at said sintered skin; and the throwaway chip is commposed of a base material constituted mainly of Si3N4 and a clad layer in thickness of 0.1 ∩ 200 νm of diamond or/and diamond-like carbon vapor-deposited on the surface of the base material and is characterized by being clad with a layer of diamond or/and diamond-like carbon partly or entirely on the surface having a sintered skin property of the base material thereof: thereby effectively achieving the object.

123. 发明申请

WO1992002960A1 THERMOCOUPLE 审中-公开
标题翻译：热电偶
公开(公告)号：WO1992002960A1
公开(公告)日：1992-02-20
申请号：PCT/JP1991001057
申请日：1991-08-07
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , SAWADA, Kazuo , INAZAWA, Shinji , YAMADA, Kouichi
发明人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
IPC分类号： H01L35/34
CPC分类号： H01L35/32 , H01L35/20 , H01L35/34
摘要： A metal oxyde layer is provided around an element wire of a thermocouple. A sol in which fine particles of a precursor of a metal oxide are dispersed is prepared by a sol-gel method. The element wire of the thermocouple is dipped in the sol. Then, a metal oxide layer is formed by depositing fine particles on the element wire through applying a current with the element wire as a cathode, and thereafter heat-treating the resultant element wire. The thermocouple according to this invention, whose insulating layer is thin is compact and excellent in flexibility and is provided with no gas adsorbing material.

124. 发明申请

WO1992001828A1 METHOD AND DEVICE FOR MANUFACTURING DIAMOND 审中-公开
标题翻译：用于制造钻石的方法和装置
公开(公告)号：WO1992001828A1
公开(公告)日：1992-02-06
申请号：PCT/JP1991000955
申请日：1991-07-17
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , IKEGAYA, Akihiko , FUJIMORI, Naoji
发明人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
IPC分类号： C30B29/04
CPC分类号： C30B25/10 , C23C16/27 , C23C16/44 , C23C16/52 , C30B25/105 , C30B29/04
摘要： A method and a device for manufacturing diamonds which are compact and high in productivity and further suitable for the manufacture in an industrial scale by improving a heating filament CVD method and the device thereof in which a large area of bases can be set and by utilizing the capability of a thermionic emission material effectively. A method for manufacturing diamonds, such that diamonds are deposited on the surfaces of bases provided near thermionic emission material by decomposing, exciting and activating a raw material gas through the use of the thermionic emission material heated to a high temperature, the raw material gas including at least one or more carbon sources selected from among a hydrocarbon including hydrocarbon oxygen and/or nitrogen in its bonding radical, a carbon oxide, a carbon halide and solid carbon, hydrogen, and if necessary any of an inert gas of group VIII in periodic table H2O, O2 and F2, is characterized in that, the periphery of the thermionic emission material heated is surrounded by cooling plates, and the bases on which the diamonds are deposited are interposed between the cooling plates and the thermionic emission material with small gaps, and in that the temperature of the surface of the bases which faces the thermionic emission material is adjusted through the use of the cooling plates, and if necessary through the use of a buffer material inserted between the cooling plates and the bases, the diamonds are deposited on the surface of the base material.

125. 发明申请

WO1992001826A1 METHOD AND APPARATUS FOR MAKING SINGLE CRYSTAL 审中-公开
标题翻译：制造单晶的方法和装置
公开(公告)号：WO1992001826A1
公开(公告)日：1992-02-06
申请号：PCT/JP1991000987
申请日：1991-07-24
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , MATSUMOTO, Kazuhisa , TATSUMI, Masami , KAWASE, Tomohiro
发明人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
IPC分类号： C30B15/12
CPC分类号： C30B15/12 , C30B15/02 , C30B15/10 , Y10S117/907 , Y10T117/1052 , Y10T117/106 , Y10T117/1064
摘要： A method and apparatus for pulling up a single crystal from a molten material flowing into a second crucible through a through hole formed at its bottom, said second crucible being placed in a first crucible containing therein a molten material continuously prepared from a plurality of starting materials. A long single crystal can be obtained in one step of pulling up, because the single crystal is pulled up while the molten material is continuously prepared from the plurality of starting materials. Further it is possible to keep a good solid-liquid boundary state, because the single crystal is pulled up from the molten material in the second crucible.

126. 发明申请

WO1991010238A1 INSULATED WIRE 审中-公开
标题翻译：绝缘线
公开(公告)号：WO1991010238A1
公开(公告)日：1991-07-11
申请号：PCT/JP1990001700
申请日：1990-12-26
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , SAWADA, Kazuo , INAZAWA, Shinji , YAMADA, Kouichi
发明人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
IPC分类号： H01B07/02
CPC分类号： H01B7/295 , H01B3/105 , H01B7/292
摘要： An insulated wire provided with a conductor, a first insulating metal oxide layer formed around the conductor, and a second insulating metal oxide layer formed around the first layer and including ceramic grains. The insulating metal oxide layers can be formed by converting a precursor of the metal oxide into a ceramic by a method such as a sol-gel method or a thermal decomposition method. As the ceramic grains to be mixed, microplate-like ones are preferred. This insulated wire has a high dielectric breakdown voltage, is excellent in flexibility, evolves no gas, and can keep insulation even at high temperature.

127. 发明申请

WO1991009698A1 THROW-AWAY DRILL 审中-公开
标题翻译：钻孔钻孔
公开(公告)号：WO1991009698A1
公开(公告)日：1991-07-11
申请号：PCT/JP1990001670
申请日：1990-12-21
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , NOGUCHI, Kazuo , MORI, Yoshikatsu , KITAGAWA, Nobuyuki , NOMURA, Toshio , ISOBE, Kazutaka
发明人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
IPC分类号： B23B51/00
CPC分类号： B23B51/0009 , B23B27/141 , B23B51/02 , B23B51/048 , B23B2200/081 , B23B2205/02 , B23B2251/02 , B23B2251/48 , B23B2251/50 , Y10S408/713 , Y10S408/714 , Y10T407/27 , Y10T408/78 , Y10T408/901
摘要： A throw-away drill which includes a cutting edge portion (31) for cutting a work and a shank portion for fitting to a predetermined position of a cutting tool, and in which the cutting edge portion is detachably and mechanically coupled to the shank portion (32). The cutting edge portion (31) and the shank portion (32) have complementary fitting portions and slits are formed in either one of the cutting edge portion (31) and the shank portion (32). When the cutting edge portion (31) and the shank portion (32) are fitted to each other, the opposed surfaces to these slits (34, 39) move away from each other and undergo elastic deformation, so that the resulting elastic force fixes the cutting edge portion (31) to the shank portion (32). Accordingly, screwing or the like is not necessary and the cutting edge portion (31) and the shank portion (32) can be coupled by mere press-in operation. Accordingly, working efficiency can be improved during the assembly process. A surface coated ultra-hard alloy is used as the material of the cutting edge portion (31), and steel as the material of the shank portion (32). Therefore, the cutting edge is excellent in wear resistance, adhesion resistance and heat crack resistance and the shank portion (32) a relatively low-coat throw-away drill.

128. 发明申请

WO1991008582A1 OHMIC ELECTRODE OF N-TYPE CUBIC BORON NITRIDE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译： N型立方氮化硼的OHMIC电极及其形成方法
公开(公告)号：WO1991008582A1
公开(公告)日：1991-06-13
申请号：PCT/JP1990001537
申请日：1990-11-28
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , YOSHIDA, Katsuhito , TSUJI, Kazuwo
发明人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
IPC分类号： H01L21/28
CPC分类号： H01L21/28575 , H01L29/452
摘要： An ohmic electrode of n-type cubic boron nitride. The ohmic electrode consists of at least two thin films, the first layer being composed of at least one alloy selected from the group consisting of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy and the second layer being composed of at least one metal selected from the group consisting of Ni, Cr, Mo and Pt, or an alloy thereof. The invention further provides a method of forming an ohmic electrode of n-type cubic boron nitride, comprising the steps of forming on an n-type cubic boron nitride a first layer composed of at least one alloy selected from the group consisting of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy containing 0.1 to 35 % by weight of Si and Ge, forming a second layer composed of a metal selected from the group consisting of Ni, Cr, Mo and Pt or an alloy thereof, and effecting the heat treatment in an inert atmosphere or in a vacuum.

129. 发明申请

WO1990013914A1 LEAD FRAME FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件引线框架
公开(公告)号：WO1990013914A1
公开(公告)日：1990-11-15
申请号：PCT/JP1990000549
申请日：1990-04-26
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , MAEDA, Takao , IHARA, Tomohiko , YASUHARA, Masaharu , YAMANAKA, Shosaku
发明人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
IPC分类号： H01L23/48
CPC分类号： H01L24/48 , H01L23/49579 , H01L23/49582 , H01L24/45 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： A lead frame of a sealed-type semiconductor device of large scale integration which has many input/output pins and which operates at high speeds. The lead frame is made of magnetic material, and its portion to be within the package has a 1 νm or thicker nonmagnetic metal coating of good conductor of electricity. This coating covers the upper surface (1a), lower surface (1b), both side surfaces (1c) and the inner end surface (1d) of the portion within the package. When the lead frame is thus formed, the inductance decreases conspicuously at the lead portions, and reliability is improved in regard to high-speed operation of the semiconductor device.
摘要翻译：一种大规模集成的密封型半导体器件的引线框架，具有许多输入/输出引脚，并以高速运行。引线框架由磁性材料制成，其在封装内的部分具有1米或更厚的良好导体电导率的非磁性金属涂层。该涂层覆盖封装内的部分的上表面（1a），下表面（1b），两个侧表面（1c）和内端表面（1d）。当这样形成引线框时，导体部分的电感明显下降，并且提高了半导体器件的高速运转的可靠性。

130. 发明申请

WO1990010090A1 NITROGEN-CONTAINING CERMET 审中-公开
标题翻译：含氮的CERMET
公开(公告)号：WO1990010090A1
公开(公告)日：1990-09-07
申请号：PCT/JP1990000200
申请日：1990-02-21
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , ISOBE, Kazutaka , NOMURA, Toshio
发明人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
IPC分类号： C22C29/02
CPC分类号： B23B51/00 , C22C29/02 , C22C29/04 , Y10S76/11 , Y10T407/27 , Y10T408/78 , Y10T428/12049 , Y10T428/12063 , Y10T428/12111
摘要： A cermet drill consisting of cermet composed of a hard dispersed phase and a combined metal phase is disclosed. The hard dispersed phase contains a titanium-containing metal atom group and a nitrogen-containing nonmetal atom group. The quantity of the titanium in the metal atom group ranges from 0.5 to 0.95 (both inclusive, the same applies hereinbelow) in terms of an atomic ratio. The quantity of the nitrogen in the nonmetal atom group ranges from 0.1 to 0.7 in terms of atomic ratio. The hard dispersed phase has a minute particle group of an average particle diameter of from 0.2 to 0.6 νm and a coarse particle group of an average particle diameter of from 1 to 3 νm. The volume ratio of the minute particle group to the coarse particle group ranges from 0.3 to 3. The weight percentage of the combined metal phase in the cermet ranges from 5 to 30. This cermet drill exhibits a high abrasion resistance, a high tenacity and a high thermal cracking resistance.

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