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    • 122. 发明公开
    • Fabrication method for mirrors for integrated optical devices
    • HerstellungsverfahrenfürSpiegelfürKomponenten der integrierten Optik
    • EP1312949A2
    • 2003-05-21
    • EP02102600.0
    • 2002-11-18
    • Dalsa Semiconductor Inc.
    • Quellet, LucTremblay, Yves
    • G02B6/124
    • G02B5/0891G02B5/0808G02B6/29326G02B6/29328
    • A method of making highly reflective mirrors on a wafer in the manufacture of photonic devices involves preheating a wafer to remove adsorbed volatile contaminants at a temperature between about 300 and 600°C. The wafer surface is etched at a temperature between about 300 and 600°C to remove absorbed and chemically absorbed contaminants in the presence of a plasma to prevent poisoning. The wafer surface is thoroughly cooled so as to as reduce the surface mobility of the impinging atoms during the subsequent metallic deposition. A deposition is then carried out on the cooled wafer of a gettering layer for gettering hydrogen, oxygen and nitrogen. A metallic reflective layer is then deposited in a deposition chamber, and finally the wafer is removed from the deposition chamber to prevent excessive bulk oxidation.
    • 在光子器件制造中在晶片上制造高反射镜的方法包括预热晶片以在约300-600℃之间的温度下去除吸附的挥发性污染物。晶片表面在约300-600℃的温度下蚀刻 以在存在等离子体的情况下除去吸收和化学吸收的污染物,以防止中毒。 晶片表面被彻底冷却,以便在随后的金属沉积期间降低冲击原子的表面迁移率。 然后在吸气层的冷却晶片上进行沉积,以吸除氢气,氧气和氮气。 然后在沉积室中沉积金属反射层,最后将晶片从沉积室移除以防止过度的体积氧化。
    • 123. 发明公开
    • Method of aligning structures on opposite sides of a wafer
    • Verfahren um Strukturen a gegenseitigen Teilen eines Wafers zu justieren
    • EP1285879A2
    • 2003-02-26
    • EP02102078.9
    • 2002-07-31
    • Dalsa Semiconductor Inc.
    • Ouellet, Luc
    • B81C1/00
    • B81C99/007B81C1/00396B81C1/00404Y10S438/975
    • A method is disclosed for aligning structures on first and second opposite sides of a wafer. First one or more transparent islands are formed on the first side of the wafer at an alignment location. The transparent islands have an exposed front side and a rear side embedded in the wafer. At least one alignment mark is formed on the front side of the transparent island. An anisotropic etch is performed through the second side of said the to form an opening substantially reaching the back side of the transparent island. A precise alignment is then carried out on the alignment mark through the opening and the transparent island. In this way a very precise alignment can be carried out on the back side of the wafer for manufacturing MEMS structures.
    • 公开了一种用于对准晶片的第一和第二相对侧上的结构的方法。 在对准位置处,在晶片的第一侧上形成第一个或多个透明岛。 透明岛具有暴露的前侧和嵌入在晶片中的后侧。 在透明岛的前侧形成至少一个对准标记。 通过所述第二侧进行各向异性蚀刻,以形成基本上到达透明岛的背面的开口。 然后通过开口和透明岛在对准标记上进行精确对准。 以这种方式,可以在用于制造MEMS结构的晶片的背面上执行非常精确的对准。
    • 128. 发明公开
    • A method of making a microfluidic device
    • Verfahren zum Herstellen einer mikrofluidischen Vorrichtung
    • EP2554510A2
    • 2013-02-06
    • EP12177755.1
    • 2012-07-25
    • Teledyne Dalsa Semiconductor Inc.
    • Johnstone, RobertMartel, Stéphane
    • B81C1/00
    • B81C1/00182B81B2201/054B81C2201/019B81C2203/0735
    • A microfabricated device is fabricated by depositing a first metal layer on a substrate to provide a first electrode of an electrostatic actuator, depositing a first structural polymer layer over the first metal layer, depositing a second metal layer over said first structural polymer layer to form a second electrode of the electrostatic actuator, depositing an insulating layer over said first structural polymer layer, planarizing the insulating layer, etching the first structural polymer layer through the insulating layer and the second metal layer to undercut the second metal layer, providing additional pre-formed structural polymer layers, at least one of which has been previously patterned, and finally bonding the additional structural layers in the form of a stack over the planarized second insulating layer to one or more microfluidic channels. The technique can also be used to make cross over channels in devices without electrostatic actuators, in which case the metal layers can be omitted.
    • 通过在衬底上沉积第一金属层以提供静电致动器的第一电极,在第一金属层上方沉积第一结构聚合物层,在第一结构聚合物层上方沉积第二金属层以形成微结构聚合物层 静电致动器的第二电极,在所述第一结构聚合物层上沉积绝缘层,平坦化绝缘层,通过绝缘层和第二金属层蚀刻第一结构聚合物层以切割第二金属层,提供额外的预形成 结构聚合物层,其中至少一个已经被预先图案化,并且最后将平坦化的第二绝缘层上的堆叠形式的附加结构层结合到一个或多个微流体通道。 该技术还可以用于在没有静电致动器的装置中跨越通道,在这种情况下可以省略金属层。