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111. 发明授权

EP0280536B1 Turn-on driving technique for insulated gate thyristor 失效
标题翻译：为了控制晶闸管技术具有绝缘控制极
公开(公告)号：EP0280536B1
公开(公告)日：1997-05-28
申请号：EP88301593.5
申请日：1988-02-24
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ogura, Tsuneo c/o Patent Division , Nakagawa, Akio c/o Patent Division
IPC分类号： H01L29/749 , H03K17/73
CPC分类号： H01L29/102 , H01L29/0834 , H01L29/744 , H01L29/749 , H03K17/732

112. 发明公开

EP0699346A4 SCR ELECTROSTATIC DISCHARGE PROTECTION FOR INTEGRATED CIRCUITS 失效
标题翻译： SCR静电放电保护集成电路
公开(公告)号：EP0699346A4
公开(公告)日：1997-05-07
申请号：EP94917414
申请日：1994-05-20
申请人： SARNOFF DAVID RES CENTER , SHARP KK
发明人： AVERY LESLIE RONALD
IPC分类号： H01L29/74 , H01L21/822 , H01L27/02 , H01L27/04 , H03K17/73 , H01L29/06 , H01L29/78
CPC分类号： H01L27/0259 , H01L29/87
摘要： The invention is a protection circuit for an integrated circuit which includes an SCR switch (12), a zener diode (14) in parallel with the SCR to trigger the state SCR to its on-state, and a zener diode (16) in series with the SCR controls the on-state or clamping voltages of the SCR. The protection circuit is formed in a semiconductor substrate (30) of first conductivity type having a well region (34) of second conductivity type, a first region (36) of first conductivity type in the well and a second region (38) of second conductivity type in the substrate spaced from the well region. The first region, well region, substrate and second region forming the SCR. A third region (40) of second conductivity type is in the well region and contacts the first region to form a first zener diode. A fourth region of second conductivity type is in the substrate and electrically connected to the well region. A fifth region (44) is in the substrate and contacts the fourth region to form a second zener diode.

113. 发明授权

EP0493379B1 AUSSCHALTKREIS EINER ANSTEUERSCHALTUNG FÜR EINEN GATEGESTEUERTEN HALBLEITER 失效
标题翻译：关电路的控制电路用于栅极控制的半导体。
公开(公告)号：EP0493379B1
公开(公告)日：1994-08-24
申请号：EP90900139.8
申请日：1989-12-15
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： MARQUARDT, Rainer
IPC分类号： H03K17/73
CPC分类号： H03K17/732
摘要： The invention relates to a switch-off circuit (8) of a control circuit (2) for a gate-controlled semiconductor (4) in which the switch-off circuit (8) has a controllable capacitor bank (12) and a control circuit inductance (LG). According to the invention, the controllable capacitor bank (12) has a freewheel branch (24) and at the output terminals (G, K) of the switch-off circuit is a series circuit (18) consisting of a decoupling diode (20) and a further capacitor bank (22) connected electrically in parallel whereby the controllable capacitor bank (12) is switched off after the start of the quenching process of the gate-controlled semiconductor (4) and the other controllable capacitor bank (22) is switched on as soon as the gate voltage (UG) exceeds a predetermined negative threshold voltage. This gives a switch-off circuit (8) whose capacitor voltage (UK1) is substantially higher so that heavier and steep gate currents (IG) are generated and the effect of parasitic series resistances is reduced.

114. 发明授权

EP0320784B1 Verfahren und Anordnungen zur Ansteuerung eines Abschaltthyristors 失效
标题翻译：方法和安排控制可关断晶闸管。
公开(公告)号：EP0320784B1
公开(公告)日：1994-06-22
申请号：EP88120489.5
申请日：1988-12-08
申请人： Asea Brown Boveri Aktiengesellschaft
发明人： Fregien, Gert
IPC分类号： H03K17/73
CPC分类号： H03K17/732 , H03K17/08124 , H03K2217/0036

115. 发明授权

EP0319870B1 Verfahren zum Schutz der Gate-Unit für einen GTO-Thyristor 失效
标题翻译：保护GTO THIRISTOR门控单元的方法
公开(公告)号：EP0319870B1
公开(公告)日：1993-01-27
申请号：EP88120203.0
申请日：1988-12-03
申请人： BBC Brown Boveri AG
发明人： Peppel, Michael, Dr.
IPC分类号： H03K17/73 , H03K17/08
CPC分类号： H03K17/732 , H03K17/0822

116. 发明授权

EP0328778B1 Hochleistungsschalter 失效
标题翻译：高功率开关
公开(公告)号：EP0328778B1
公开(公告)日：1992-03-11
申请号：EP88121453.0
申请日：1988-12-22
申请人： ASEA BROWN BOVERI AG
发明人： Grüning, Horst, Dr.
IPC分类号： H03K17/73 , H01L29/60
CPC分类号： H03K17/732 , H01L23/4824 , H01L2924/0002 , H01L2924/3011 , H01L2924/00

117. 发明公开

EP0367301A3 Semiconductor switch circuit 失效
标题翻译：半导体开关电路
公开(公告)号：EP0367301A3
公开(公告)日：1990-05-16
申请号：EP89123184.7
申请日：1985-06-21
申请人： HITACHI, LTD. , NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Sugawara, Yoshitaka , Kitano, Junjiro , Kimura, Tadakatsu , Inabe, Yasunobu , Tanabe, Masa-aki
IPC分类号： H03K17/687 , H03K17/60 , H03K17/73
CPC分类号： H03K17/567
摘要： A semiconductor switching device of field-drive type includes a bipolar component having a pnp transistor portion (8) and a npn transistor portion (9), said pnp transistor portion (8) and said npn transistor portion (9) being connected to cause a positive feedback, and a n-channel MOS transistor (11) connected across an emitter electrode (n3) and a collector electrode (n2) of said npn transistor portion (9), wherein a p-channel MOS transistor (10) is connected across an emitter electrode (p1) and a connector electrode (p2) of the pnp transistor portion (8), and a control terminal of said n-channel MOS transistor (11) is electrically connected with a control terminal of said p-channel MOS transistor (10). Said device is operable to control the main drive section even in the floating state and to drive the main drive section by a small control current.

118. 发明公开

EP0288421A2 Symmetrierung der abzuschaltenden Ströme parallelgeschalteter, gategesteuerter Halbleiter 失效
标题翻译： Symmetrierung der abzuschaltendenStrömeparallelchachalteter，gategesteuerter Halbleiter。
公开(公告)号：EP0288421A2
公开(公告)日：1988-10-26
申请号：EP88730087.9
申请日：1988-04-18
申请人： Licentia Patent-Verwaltungs-GmbH
发明人： Beinhold, Georg , Niehage, Helmut
IPC分类号： H03K17/12 , H03K17/73
CPC分类号： H03K17/125
摘要： Zur Symmetrierung der abzuschaltenden Ströme parallelgeschalteter, unterschiedlich lange Abschalt- bzw. Abschaltverzugszeiten aufweisender gategesteuerter Halbleiter werden zunächst bei kleinen Strömen die tatsächlichen Abschalt- bzw. Abschaltverzugszeiten der Halbleiter (V1, V2) ermittelt. Dann wird bei bis zum vollen Betriebsstrom gesteigerten Strömen jeweils die Abgabe der Abschaltsignale für den einzelnen Halbleiter (V1, V2) um die beim vorhergehenden Abschaltvorgang ermittelte Zeitdifferenz seiner Abschalt- bzw. Abschaltverzugszeit zu der längstandauernden Abschalt- bzw. Abschaltverzugszeit eines der parallelgeschalteten Halbleiter (V1, V2) verzögert. Diese Verzögerung kann zusätzlich laststromabhängig korrigiert werden.
摘要翻译：为了平衡要关闭具有不同关断或关断延迟时间的并联栅极控制半导体的电流，首先确定半导体（V1，V2）的实际关断或关断延迟时间在低电流。然后，各个半导体（V1，V2）的关断信号的传送在每种情况下被延迟，其中电流增加到完全工作电流的时间差在前一关断过程中确定的时间差关断或关断延迟时间到并联连接的半导体（V1，V2）之一的最长关断或关断延迟时间。该延迟可以根据负载电流进行额外校正。

119. 发明公开

EP0262958A2 Thyristor drive system 失效
标题翻译：晶闸管驱动系统
公开(公告)号：EP0262958A2
公开(公告)日：1988-04-06
申请号：EP87308676.3
申请日：1987-09-30
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ogura, Tsuneo c/o Patent Division , Takigami, Katsuhiko c/o Patent Division , Nakagawa, Akio c/o Patent Division , Domon, Tomokazu c/o Patent Division
IPC分类号： H03K17/73 , H01L29/74
CPC分类号： H01L29/0834 , H01L29/744 , H03K17/732 , H03K2217/0036
摘要： A gate turn-off thyristor drive system with low power loss when it is in the turn-off mode, is disclosed. A first turn-off pulse of a predetermined amplitude is applied to a first gate electrode (16). A second turn-off pulse is applied to a second gate electrode (18). An amplitude of the second turn-off pulse is smaller in absolute value than that of the first turn-off pulse. The fall time of the anode current at the time of turn-off is reduced, and the initial value of the tail current of the anode current is reduced. The power loss as the product of the anode voltage and the anode current is reduced.
摘要翻译：公开了一种门关断晶闸管驱动系统，当其处于关断模式时具有低功率损耗。预定幅度的第一关断脉冲被施加到第一栅电极（16）。第二关断脉冲被施加到第二栅电极（18）。第二关断脉冲的振幅的绝对值小于第一关断脉冲的振幅。关断时阳极电流的下降时间减少，并且阳极电流的尾电流的初始值降低。作为阳极电压和阳极电流的乘积的功率损失减小。

120. 发明授权

EP0106059B1 Halbleiterschalter mit einem abschaltbaren Thyristor 失效
标题翻译：半导体开关与门开关THYRISTOR
公开(公告)号：EP0106059B1
公开(公告)日：1987-11-25
申请号：EP83107965.2
申请日：1983-08-11
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Herberg, Helmut, Dr.
IPC分类号： H03K17/73 , H01L29/74
CPC分类号： H01L29/742 , H01L29/102 , H01L29/7455 , H03K17/732

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