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111. 发明申请

US20100044594A1 Apparatus for aligning a particle-beam-generated pattern to a pattern on a pre-patterned substrate 审中-公开
标题翻译：用于将粒子束产生的图案与预图案化衬底上的图案对准的装置
公开(公告)号：US20100044594A1
公开(公告)日：2010-02-25
申请号：US12589479
申请日：2009-10-22
申请人： Jeffrey S. Sullivan , Tony Tiecheng Young
发明人： Jeffrey S. Sullivan , Tony Tiecheng Young
IPC分类号： G03F9/00 , G21G5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F9/7015 , G03F9/7088 , H01J2237/31793 , Y10S430/143
摘要： The apparatus includes a particle beam, having an axis which functions as a primary optical axis, which particle beam is used to generate a pattern on a substrate. The apparatus also includes an optical reader, having an axis which functions as a secondary optical axis. A position fiducial is located at a stationary position relative to the substrate. Registration of a pre-existing pattern and the particle beam axis to the position fiducial periodically during production of a particle-beam-generated pattern continually provides an improvement in the overall alignment of the pattern being created with the pre-existing pattern on the substrate.
摘要翻译：该装置包括具有用作主光轴的轴的粒子束，该粒子束用于在衬底上产生图案。该装置还包括具有用作辅助光轴的轴的光学读取器。位置基准位于相对于基板的静止位置。在制备粒子束生成图案期间，将预先存在的图案和粒子束轴定位到周期性地定位在基准上的连续地提供了在衬底上产生的图案与预先存在的图案的整体对准。

112. 发明授权

US07640142B2 Position measurement apparatus and method and pattern forming apparatus and writing method 有权
标题翻译：位置测量装置和方法以及图案形成装置和书写方法
公开(公告)号：US07640142B2
公开(公告)日：2009-12-29
申请号：US11492843
申请日：2006-07-26
申请人： Yuichi Tachikawa , Kazumichi Yasui , Kiyoshi Nakaso , Kiyoshi Hattori , Tsugiyuki Okuya , Makoto Mita
发明人： Yuichi Tachikawa , Kazumichi Yasui , Kiyoshi Nakaso , Kiyoshi Hattori , Tsugiyuki Okuya , Makoto Mita
IPC分类号： H04B15/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F9/7092 , H01J2237/31793
摘要： A position measurement apparatus includes a movable stage structure, a measurement unit using a laser to measure a moved position of the stage and to output a corresponding measured value, a first filter configured to attenuate a first component of a certain frequency region of the measured value outputted by the measurement unit, a second filter connected in parallel with the first filter configured to attenuate a second component other than the certain frequency region of the measured value outputted by the measurement unit, a third filter connected in series to the second filter with the series connection of the second and third filters connected in parallel with the first filter, configured to attenuate the first component of the certain frequency region of the measured value outputted by the measurement unit, and a processing unit configured to combine an output of the first filter and an output of the series connection of the second and third filters and to thereby output a first combined value.
摘要翻译：位置测量装置包括可移动平台结构，使用激光测量台的移动位置并输出相应测量值的测量单元，被配置为衰减测量值的某个频率区域的第一分量的第一滤波器由所述测量单元输出的与所述第一滤波器并联连接的第二滤波器，被配置为衰减由所述测量单元输出的测量值的所述特定频率区域以外的第二分量;第三滤波器，其与所述第二滤波器串联连接，与第一滤波器并联连接的第二和第三滤波器的串联连接，被配置为衰减由测量单元输出的测量值的特定频率区域的第一分量;以及处理单元，被配置为组合第一滤波器的输出以及第二和第三滤波器的串联连接的输出，从而输出第一滤波器综合价值。

113. 发明申请

US20090008551A1 Electron beam apparatus with aberration corrector 有权
标题翻译：具有像差校正器的电子束装置
公开(公告)号：US20090008551A1
公开(公告)日：2009-01-08
申请号：US12153068
申请日：2008-05-13
申请人： Takeshi Kawasaki , Takaho Yoshida , Yoichi Ose , Hideo Todokoro
发明人： Takeshi Kawasaki , Takaho Yoshida , Yoichi Ose , Hideo Todokoro
IPC分类号： G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/1471 , H01J37/153 , H01J37/265 , H01J37/28 , H01J37/302 , H01J2237/1501 , H01J2237/1534 , H01J2237/21 , H01J2237/2487 , H01J2237/2817 , H01J2237/31793
摘要： An electron beam apparatus with an aberration corrector using multipole lenses is provided. The electron beam apparatus has a scan mode for enabling the operation of the aberration corrector and a scan mode for disabling the operation of the aberration corrector and the operation of each of the aberration corrector, a condenser lens, and the like is controlled such that the object point of an objective lens does not change in either of the scan modes. If a comparison is made between the secondary electron images of a specimen in the two modes, the image scaling factor and the focus remain unchanged and evaluation and adjustment can be performed by distinctly recognizing only the effect of the aberration corrector. This reduces the time required to adjust an optical axis which has been long due to an axial alignment defect inherent in the aberration corrector and an axial alignment defect in a part other than the aberration corrector which are indistinguishably intermingled with each other.
摘要翻译：提供具有使用多极透镜的像差校正器的电子束装置。电子束装置具有能够进行像差校正器的操作的扫描模式和用于禁止像差校正器的操作的扫描模式，并且每个像差校正器，聚光透镜等的操作被控制，使得物镜的物体在任一种扫描模式下都不会改变。如果在两种模式中的样本的二次电子图像之间进行比较，则图像缩放因子和焦点保持不变，并且可以通过清楚地仅识别像差校正器的效果来进行评估和调整。这减少了由于像差校正器固有的轴向对准缺陷而长时间调整光轴所需的时间以及像差校正器之外的不同于彼此混合的部分的轴向对准缺陷所需的时间。

114. 发明授权

US07435978B2 System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device 有权
标题翻译：用于校正用于光刻和观察的带电粒子束的控制条件的系统，方法和程序，以及用于制造半导体器件的程序和方法
公开(公告)号：US07435978B2
公开(公告)日：2008-10-14
申请号：US11239428
申请日：2005-09-30
申请人： Tetsuro Nakasugi , Takumi Ota
发明人： Tetsuro Nakasugi , Takumi Ota
IPC分类号： H01J37/153
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31793
摘要： A system for correcting a charged particle beam lithography condition including: an error calculation unit configured to calculate an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters; a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum; and a main correction unit configured to calculate main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.
摘要翻译：一种用于校正带电粒子束光刻条件的系统，包括：误差计算单元，被配置为计算带电粒子束的照明位置的误差，带电粒子束由通过初始校正参数校正的光刻条件控制; 临时校正单元，被配置为计算临时校正参数以将所述误差减小到最小; 以及主校正单元，被配置为通过使用临时校正参数和初始校正参数执行统计处理来计算校正光刻条件的主要校正参数。

115. 发明申请

US20070085027A1 Real-time compensation of mechanical position error in pattern generation or imaging applications 失效
标题翻译：模式生成或成像应用中机械位置误差的实时补偿
公开(公告)号：US20070085027A1
公开(公告)日：2007-04-19
申请号：US11241794
申请日：2005-09-30
申请人： Bruce Baxter , Benyamin Buller , Wenwei Qiao , Huei Kao
发明人： Bruce Baxter , Benyamin Buller , Wenwei Qiao , Huei Kao
IPC分类号： G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/20 , H01J2237/20292 , H01J2237/2826 , H01J2237/30438 , H01J2237/31793
摘要： Improved systems, apparatus, and methods for detecting positions of moving stages and accurately compensating position error during operation (in “real time”) are provided. For some embodiments, rather than rely on two dimensional position measurements, measurements in at least three dimensions may be taken allowing compensation for pitch and roll and, therefore, more accurate position measurements. Further, by including a measurement of a beam column, compensation for movement of the beam may be performed.
摘要翻译：提供了用于检测移动台的位置和在操作期间（“实时”）中精确地补偿位置误差的改进的系统，装置和方法。对于一些实施例，不是依赖于二维位置测量，可以采取至少三维的测量，允许对俯仰和滚动进行补偿，并因此进行更准确的位置测量。此外，通过包括光束列的测量，可以执行对光束的移动的补偿。

116. 发明授权

US07199365B2 Electron beam apparatus with aberration corrector 有权
公开(公告)号：US07199365B2
公开(公告)日：2007-04-03
申请号：US11220548
申请日：2005-09-08
申请人： Takeshi Kawasaki , Takaho Yoshida , Yoichi Ose , Hideo Todokoro
发明人： Takeshi Kawasaki , Takaho Yoshida , Yoichi Ose , Hideo Todokoro
IPC分类号： G21K1/08 , H01J3/14
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/1471 , H01J37/153 , H01J37/265 , H01J37/28 , H01J37/302 , H01J2237/1501 , H01J2237/1534 , H01J2237/21 , H01J2237/2487 , H01J2237/2817 , H01J2237/31793
摘要： An electron beam apparatus with an aberration corrector using multipole lenses is provided. The electron beam apparatus has a scan mode for enabling the operation of the aberration corrector and a scan mode for disabling the operation of the aberration corrector and the operation of each of the aberration corrector, a condenser lens, and the like is controlled such that the object point of an objective lens does not change in either of the scan modes. If a comparison is made between the secondary electron images of a specimen in the two modes, the image scaling factor and the focus remain unchanged and evaluation and adjustment can be performed by distinctly recognizing only the effect of the aberration corrector. This reduces the time required to adjust an optical axis which has been long due to an axial alignment defect inherent in the aberration corrector and an axial alignment defect in a part other than the aberration corrector which are indistinguishably intermingled with each other.

117. 发明授权

US07189981B2 Electromagnetic focusing method for electron-beam lithography system 失效
标题翻译：电子束光刻系统的电磁聚焦方法
公开(公告)号：US07189981B2
公开(公告)日：2007-03-13
申请号：US11205148
申请日：2005-08-17
申请人： Chang-wook Moon , Sidorkin Vadim , Chang-hoon Choi
发明人： Chang-wook Moon , Sidorkin Vadim , Chang-hoon Choi
IPC分类号： H01J37/302 , H01J1/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31793
摘要： A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error. When it is determined the focusing error is out of the range of the allowable error, the above operations are repeated.
摘要翻译：提供了一种在电子束光刻系统的真空室中将来自发射极的电子束的预定图案投影到晶片的方法。首先设置用于执行电磁聚焦的初始条件，并校正由初始发射速度差和从发射器发射的电子之间的初始发射角差引起的电子束的扩展现象。然后，校正当电场不与磁场平行时引起的电子束的偏移，并且由磁场的梯度引起的电子束的偏移被校正校正了从发射极发射的电子之间的库仑相互作用引起的电子束的光束直径的增加。然后，确定聚焦误差是否在允许误差的范围内。当确定聚焦误差在允许误差的范围之外时，重复上述操作。

118. 发明申请

US20060151720A1 Electromagnetic focusing method for electron-beam lithography system 失效
标题翻译：电子束光刻系统的电磁聚焦方法
公开(公告)号：US20060151720A1
公开(公告)日：2006-07-13
申请号：US11205148
申请日：2005-08-17
申请人： Chang-wook Moon , Sidorkin Vadim , Chang-hoon Choi
发明人： Chang-wook Moon , Sidorkin Vadim , Chang-hoon Choi
IPC分类号： H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31793
摘要： A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error. When it is determined the focusing error is out of the range of the allowable error, the above operations are repeated.
摘要翻译：提供了一种在电子束光刻系统的真空室中将来自发射极的电子束的预定图案投影到晶片的方法。首先设置用于执行电磁聚焦的初始条件，并校正由初始发射速度差和从发射器发射的电子之间的初始发射角差引起的电子束的扩展现象。然后，校正当电场不与磁场平行时引起的电子束的偏移，并且由磁场的梯度引起的电子束的偏移被校正校正了从发射极发射的电子之间的库仑相互作用引起的电子束的光束直径的增加。然后，确定聚焦误差是否在允许误差的范围内。当确定聚焦误差在允许误差的范围之外时，重复上述操作。

119. 发明申请

US20060076514A1 Charged particle beam processing apparatus 有权
公开(公告)号：US20060076514A1
公开(公告)日：2006-04-13
申请号：US11235411
申请日：2005-09-26
申请人： Kiminobu Akeno
发明人： Kiminobu Akeno
IPC分类号： A61N5/00
CPC分类号： H01L21/67213 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31793
摘要： A charged particle beam processing apparatus includes a sample chamber to process a substrate including side faces by a charged particle beam, a movable stage in the sample chamber, the stage including a place on which the substrate is to be mounted, a height and position acquiring unit to acquire a height of the substrate on the stage by irradiating a laser beam onto the substrate on the stage and using the laser beam reflected from the substrate and to acquire positions of at least two adjacent side faces among the side faces based on the acquired height, and a calculating unit to calculate a position of center of gravity of the substrate on the stage and a rotation angle as to a rotary axis vertical to the place on which the substrate is to be mounted based on the positions of the at least two adjacent side faces.

120. 发明申请

US20060016991A1 Electron beam apparatus with aberration corrector 有权
公开(公告)号：US20060016991A1
公开(公告)日：2006-01-26
申请号：US11220548
申请日：2005-09-08
申请人： Takeshi Kawasaki , Takaho Yoshida , Yoichi Ose , Hideo Todokoro
发明人： Takeshi Kawasaki , Takaho Yoshida , Yoichi Ose , Hideo Todokoro
IPC分类号： G21K7/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/1471 , H01J37/153 , H01J37/265 , H01J37/28 , H01J37/302 , H01J2237/1501 , H01J2237/1534 , H01J2237/21 , H01J2237/2487 , H01J2237/2817 , H01J2237/31793
摘要： An electron beam apparatus with an aberration corrector using multipole lenses is provided. The electron beam apparatus has a scan mode for enabling the operation of the aberration corrector and a scan mode for disabling the operation of the aberration corrector and the operation of each of the aberration corrector, a condenser lens, and the like is controlled such that the object point of an objective lens does not change in either of the scan modes. If a comparison is made between the secondary electron images of a specimen in the two modes, the image scaling factor and the focus remain unchanged and evaluation and adjustment can be performed by distinctly recognizing only the effect of the aberration corrector. This reduces the time required to adjust an optical axis which has been long due to an axial alignment defect inherent in the aberration corrector and an axial alignment defect in a part other than the aberration corrector which are indistinguishably intermingled with each other.

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