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111. 发明公开

EP1920456A1 LOW RESISTANCE TITANIUM NITRIDE FILMS 有权
标题翻译：用于生产的氮化钛薄膜具有低电阻
公开(公告)号：EP1920456A1
公开(公告)日：2008-05-14
申请号：EP06787866.0
申请日：2006-07-19
申请人： Micron Technology, Inc.
发明人： KRAUS, Brenda D. , MARSH, Eugene P.
IPC分类号： H01L21/205
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45534 , H01L21/02186 , H01L21/0228 , H01L21/28061 , H01L21/3141 , H01L21/76843 , H01L21/76846 , H01L28/75 , H01L29/4941 , Y10S257/915
摘要： The use of atomic layer deposition (ALD) to form a conductive titanium nitride layer produces a reliable structure for use in a variety of electronic devices. The structure is formed by depositing titanium nitride by atomic layer deposition onto a substrate surface using a titanium-containing precursor chemical such as TDEAT, followed by a mixture of ammonia and carbon monoxide or carbon monoxide alone, and repeating to form a sequentially deposited TiN structure. Such a TiN layer may be used as a diffusion barrier underneath another conductor such as aluminum or copper, or as an electro-migration preventing layer on top of an aluminum conductor. ALD deposited TiN layers have low resistivity, smooth topology, high deposition rates, and excellent step coverage and electrical continuity.

112. 发明公开

EP1221178A1 METHOD FOR DEPOSITING NANOLAMINATE THIN FILMS ON SENSITIVE SURFACES 审中-公开
标题翻译：用于薄膜上的敏感表面分离，纳米层压
公开(公告)号：EP1221178A1
公开(公告)日：2002-07-10
申请号：EP00973583.8
申请日：2000-10-16
申请人： ASM America, Inc.
发明人： ELERS, Kai-Erik , HAUKKA, Suvi, P. , SAANILA, Ville, Antero , KAIPIO, Sari, Johanna , SOININEN, Pekka, Juha
IPC分类号： H01L21/768 , H01L21/285 , C23C16/00
CPC分类号： C30B29/38 , C23C16/32 , C23C16/44 , C23C16/4401 , C23C16/45529 , C23C16/45534 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28568 , H01L21/76843 , H01L21/76846 , H01L21/76877
摘要： The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.
摘要翻译：本发明方法提供用于生长的保形金属氮化物，金属碳化物和金属薄膜，以及纳米叠层结构并入本文膜，从腐蚀性化学物质的工具。腐蚀性的化学化合物，颜色的量：如金属和氧化物：如卤化氢，过渡金属，过渡金属碳化物和过渡金属氮化物在各种表面上的薄膜，颜色的沉积过程中被降低。吸气剂化合物保护表面以氢和铵卤化物卤化物,:如铝，铜，氧化硅和所述层敏感沉积，防止腐蚀。 Nanolaminates结构（20）包含金属氮化物，氮化钛：如（30）和氮化钨（40），和金属碳化物，以及用于形成其的方法，然后，是游离缺失盘。

113. 发明授权

EP4050683B1 METHOD OF PREPARING POSITIVE ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERY 有权
公开(公告)号：EP4050683B1
公开(公告)日：2024-08-21
申请号：EP21741348.3
申请日：2021-01-12
IPC分类号： C23C16/455 , C23C16/44 , H01M4/04 , H01M4/525 , H01M4/62 , H01M4/02
CPC分类号： H01M4/525 , H01M4/62 , Y02E60/10 , C23C16/45555 , C23C16/45534 , C23C16/4417 , H01M2004/02820130101 , H01M4/0428

114. 发明授权

EP3642385B1 METHODS OF ATOMIC LAYER DEPOSITION FOR SELECTIVE FILM GROWTH 有权
公开(公告)号：EP3642385B1
公开(公告)日：2024-07-31
申请号：EP18733600.3
申请日：2018-06-22
IPC分类号： C23C16/04 , C23C16/14 , C23C16/455
CPC分类号： C23C16/045 , C23C16/14 , C23C16/45527 , C23C16/45534

115. 发明公开

EP3287543A1 ROLL-TO-ROLL TYPE TREATMENT APPARATUS FOR LONG BASE MATERIAL AND DEPOSITION APPARATUS USING THE SAME 有权
标题翻译：用于长基材的卷辊式处理装置和使用该装置的沉积装置
公开(公告)号：EP3287543A1
公开(公告)日：2018-02-28
申请号：EP17187495.1
申请日：2017-08-23
申请人： Sumitomo Metal Mining Co., Ltd.
发明人： OKAMI, Hideharu
IPC分类号： C23C14/02 , C23C14/20 , C23C14/35 , C23C14/56 , H01J37/32
CPC分类号： C23C16/45534 , B65H2301/51145 , C23C14/021 , C23C14/025 , C23C14/165 , C23C14/205 , C23C14/35 , C23C14/562 , C23C14/568 , G11B5/85 , H01J37/3277
摘要： [PROBLEM] Providing a roll-to-roll type treatment apparatus capable of selecting either a path for double-side treatment or a path for single-side treatment without increasing the size thereof.
[MEANS FOR SOLVING THE PROBLEM] Disclosed herein is a treatment apparatus including: two can rolls provided on a transfer path through which a long resin film is transferred in a roll-to-roll manner in a vacuum chamber; and surface treatment means facing an outer circumference of each of the can rolls to treat a surface of the long resin film cooled by being wound around the outer circumference, wherein the downstream can roll is provided with upper and lower two sets of feeding and sending systems, and one surface of the long resin film in contact with the outer circumference of the downstream can roll at a time when the long resin film travels through the lower one of the two sets of feeding and sending systems is opposite to the other surface of the long resin film in contact with the outer circumference of the downstream can roll at a time when the long resin film travels through the upper one.
摘要翻译：发明内容本发明提供一种能够不增大尺寸地选择双面处理的路径或单面处理的路径的卷对卷型处理装置。用于解决课题的手段在此公开了一种处理装置，该处理装置具备：设置在传送路径上的两个罐辊，通过该传送路径在真空室内以卷对卷的方式传送长树脂膜; 以及表面处理装置，面向每个罐辊的外圆周，以处理通过卷绕在外圆周上而被冷却的长树脂薄膜的表面，其中下游辊轧辊设置有上下两组给料和送料系统并且长树脂膜与下游的外周相接触的一个表面可以在长树脂膜穿过两组进给和送出系统中的下方的一个与另一个表面相反时滚动当长树脂膜穿过上部树脂膜时，与下游外周接触的长树脂膜可以滚动。

116. 发明公开

EP3247819A1 PROCESS FOR PRODUCING FLEXIBLE ORGANIC-INORGANIC LAMINATES 审中-公开
公开(公告)号：EP3247819A1
公开(公告)日：2017-11-29
申请号：EP15817355.9
申请日：2015-12-22
申请人： BASF Coatings GmbH
发明人： AHLF, Maraike , FRANK, Juergen , ADERMANN, Torben , KLOTZ, Stephan
IPC分类号： C23C16/455 , H01L51/52
CPC分类号： C23C16/45529 , C23C16/45534 , C23C16/45553 , H01L51/5256
摘要： Processes for producing flexible organic-inorganic laminates by atomic layer deposition are described, as well as barrier films comprising flexible organic-inorganic laminates. In particular, a process for producing a laminate including (a) depositing an inorganic layer by an atomic layer deposition process, and (b) depositing an organic layer comprising selenium by a molecular layer deposition process is provided.

117. 发明公开

EP3048185A1 Process for producing flexible organic-inorganic laminates 审中-公开
标题翻译： Verfahren zur Herstellung von flexiblen organisch-anorganischen Laminaten
公开(公告)号：EP3048185A1
公开(公告)日：2016-07-27
申请号：EP15151839.6
申请日：2015-01-20
申请人： BASF Coatings GmbH
发明人： Ahlf, Maraike , Frank, Juergen , Adermann, Torben , Klotz, Stephan
IPC分类号： C23C16/455 , H01L51/52
CPC分类号： C23C16/45553 , C23C16/45529 , C23C16/45534 , H01L51/5256
摘要： The present invention is in the field of processes for producing flexible organic-inorganic laminates as well as barrier films comprising flexible organic-inorganic laminates by atomic layer deposition. In particular, the present invention relates to a process for producing a laminate comprising
(a) depositing an inorganic layer by an atomic layer deposition process, and
(b) depositing an organic layer comprising selenium by a molecular layer deposition process.
摘要翻译：本发明涉及通过原子层沉积生产柔性有机 - 无机层压材料以及包含柔性有机 - 无机层压材料的阻挡膜的方法领域。具体而言，本发明涉及一种层叠体的制造方法，其特征在于，包括：（a）通过原子层沉积工艺沉积无机层，和（b）通过分子层沉积工艺沉积包含硒的有机层。

118. 发明公开

EP2049705A4 IMPROVED METHODS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：改进方法，原子层沉积
公开(公告)号：EP2049705A4
公开(公告)日：2014-10-29
申请号：EP07810399
申请日：2007-07-12
申请人： LINDE INC
发明人： MA CE , MCFARLANE GRAHAM , WANG QING MIN , HELLY PATRICK J
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： C23C16/405 , C23C16/45534 , C23C16/45553

119. 发明公开

EP2407576A4 PROCESS FOR REMOVING RESIDUAL WATER MOLECULES IN PROCESS FOR PRODUCING METALLIC THIN FILM, AND PURGE SOLVENT 审中-公开
标题翻译：程序脱除水分子休息了用于生产的金属薄膜和并冲洗/其清洁
公开(公告)号：EP2407576A4
公开(公告)日：2013-02-20
申请号：EP10750648
申请日：2010-02-15
申请人： ADEKA CORP
发明人： SHIRATORI TSUBASA , WATANABE TSUYOSHI , ENOMOTO YOSHIJI
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , H01L21/02 , H01L21/285
CPC分类号： H01L21/28562 , C23C16/4402 , C23C16/4482 , C23C16/45534 , H01L21/28194 , H01L28/55
摘要： The present process for removing residual water molecules is suitably used in a metallic thin film production method of forming a metallic thin film on a substrate. The residual-water-molecule removal process involves removing residual water molecules using a gas generated by vaporizing a purge solvent. Preferably, the purge solvent is an organic solvent or an organic solvent composition having a water content at the azeotropic composition of at least 20% by mass. With the present residual-water-molecule removal process, water molecules remaining in the system can be removed efficiently in the production of metallic thin films by the ALD method or the like, and thus, the film-formation time can be shortened and metallic thin films can be produced efficiently.

120. 发明授权

EP1920456B1 METHOD OF FABRICATING LOW RESISTANCE TITANIUM NITRIDE FILMS 有权
标题翻译：用于生产的氮化钛薄膜具有低电阻
公开(公告)号：EP1920456B1
公开(公告)日：2012-08-22
申请号：EP06787866.0
申请日：2006-07-19
申请人： Micron Technology, Inc.
发明人： KRAUS, Brenda D. , MARSH, Eugene P.
IPC分类号： H01L21/285 , C23C16/34 , H01L21/28 , H01L21/768
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45534 , H01L21/02186 , H01L21/0228 , H01L21/28061 , H01L21/3141 , H01L21/76843 , H01L21/76846 , H01L28/75 , H01L29/4941 , Y10S257/915
摘要： The use of atomic layer deposition (ALD) to form a conductive titanium nitride layer produces a reliable structure for use in a variety of electronic devices. The structure is formed by depositing titanium nitride by atomic layer deposition onto a substrate surface using a titanium-containing precursor chemical such as TDEAT, followed by a mixture of ammonia and carbon monoxide or carbon monoxide alone, and repeating to form a sequentially deposited TiN structure. Such a TiN layer may be used as a diffusion barrier underneath another conductor such as aluminum or copper, or as an electro-migration preventing layer on top of an aluminum conductor. ALD deposited TiN layers have low resistivity, smooth topology, high deposition rates, and excellent step coverage and electrical continuity.

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