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    • 111. 发明授权
    • Shared redundancy for memory having column addressing
    • 具有列寻址的存储器的共享冗余
    • US06724670B2
    • 2004-04-20
    • US10277063
    • 2002-10-21
    • William F. JonesWen Li
    • William F. JonesWen Li
    • G11C700
    • G11C29/812
    • A shared redundancy prefetch scheme to provide a reduced number of fuses. DDR SDRAMs allow burst addressing at various burst lengths. DDR SDRAMs generally implement LEFT and RIGHT segment column addressing. In DDR SDRAMs which implement redundant memory arrays, fuses may be used to provide access to the redundant columns. Because burst addressing may begin with a RIGHT segment address, two different columns may be accessed on the same clock cycle. By providing a compare scheme which implements separate compare logic for the lower bits of the LEFT and RIGHT segments and compares these bits to a common fuse set used for both the LEFT and RIGHT segments, the number of fuses in the redundant DDR SDRAM scheme can be reduced.
    • 共享冗余预取方案,以提供减少数量的保险丝。 DDR SDRAM允许以各种突发长度进行脉冲串寻址。 DDR SDRAM通常实现LEFT和RIGHT段列寻址。 在实现冗余存储器阵列的DDR SDRAM中,可以使用保险丝来提供对冗余列的访问。 因为突发寻址可能以RIGHT段地址开始,所以可以在同一时钟周期访问两个不同的列。 通过提供对LEFT和RIGHT段的低位执行单独的比较逻辑的比较方案,并将这些比特与用于LEFT和RIGHT段的公共保险丝组比较,冗余DDR SDRAM方案中的熔丝数可以是 减少
    • 113. 发明授权
    • CMOS output driver for semiconductor device and related method for improving latch-up immunity in a CMOS output driver
    • 用于半导体器件的CMOS输出驱动器和用于提高CMOS输出驱动器中的闭锁抑制的相关方法
    • US06624660B2
    • 2003-09-23
    • US10010820
    • 2001-12-06
    • Wen LiMichael D. ChaineManny Kin Ma
    • Wen LiMichael D. ChaineManny Kin Ma
    • H03K19094
    • H03K19/00315
    • An output driver circuit for a semiconductor device. In one embodiment, the output driver is coupled to an output terminal of the semiconductor device and consists of an N-channel pull-down transistor and a P-channel pull-up transistor formed in an N-well in a P-type substrate. A tie-down region formed in the N-well is selectively coupled to a supply potential by means of a decoupling transistor, and during normal operation of the driver maintains the supply voltage bias of the N-well. An overdrive detection circuit is coupled to the output terminal. Upon detection of an overdrive condition on the output terminal, such as a voltage exceeding a predetermined maximum, or excessive current injected into the output terminal (or both), the overdrive detection circuit deasserts a control signal applied to the gate of the decoupling transistor, thereby decoupling the N-well from the supply potential. In one embodiment, the decoupling transistor is not coupled to the output terminal.
    • 一种用于半导体器件的输出驱动器电路。 在一个实施例中,输出驱动器耦合到半导体器件的输出端子,并且由形成在P型衬底中的N阱中的N沟道下拉晶体管和P沟道上拉晶体管组成。 形成在N阱中的结合区域通过去耦晶体管选择性地耦合到电源电位,并且在驱动器的正常操作期间维持N阱的电源电压偏置。 过驱动检测电路耦合到输出端子。 在检测出输出端子上的过驱动条件(例如超过预定最大值的电压)或注入输出端子(或两者)的过电流时,过驱动检测电路解除施加到去耦晶体管的栅极的控制信号, 从而将N阱与电源电位分离。 在一个实施例中,去耦晶体管不耦合到输出端。
    • 115. 发明授权
    • Shared redundancy for memory having column addressing
    • 具有列寻址的存储器的共享冗余
    • US06480429B2
    • 2002-11-12
    • US09781808
    • 2001-02-12
    • William F. JonesWen Li
    • William F. JonesWen Li
    • G11C700
    • G11C29/812
    • A shared redundancy prefetch scheme to provide a reduced number of fuses. DDR SDRAMs allow burst addressing at various burst lengths. DDR SDRAMs generally implement LEFT and RIGHT segment column addressing. In DDR SDRAMs which implement redundant memory arrays, fuses may be used to provide access to the redundant columns. Because burst addressing may begin with a RIGHT segment address, two different columns may be accessed on the same clock cycle. By providing a compare scheme which implements separate compare logic for the lower bits of the LEFT and RIGHT segments and compares these bits to a common fuse set used for both the LEFT and RIGHT segments, the number of fuses in the redundant DDR SDRAM scheme can be reduced.
    • 共享冗余预取方案,以提供减少数量的保险丝。 DDR SDRAM允许以各种突发长度进行脉冲串寻址。 DDR SDRAM通常实现LEFT和RIGHT段列寻址。 在实现冗余存储器阵列的DDR SDRAM中,可以使用保险丝来提供对冗余列的访问。 因为突发寻址可能以RIGHT段地址开始,所以可以在同一时钟周期访问两个不同的列。 通过提供对LEFT和RIGHT段的低位执行单独的比较逻辑的比较方案,并将这些比特与用于LEFT和RIGHT段的公共保险丝组比较,冗余DDR SDRAM方案中的熔丝数可以是 减少
    • 117. 发明授权
    • Frequency adjustable, zero temperature coefficient referencing ring
oscillator circuit
    • 频率可调,零温度系数参考环形振荡器电路
    • US5661428A
    • 1997-08-26
    • US631993
    • 1996-04-15
    • Wen LiManny K. F. Ma
    • Wen LiManny K. F. Ma
    • G05F3/24G05F3/26G05F3/08
    • G05F3/262G05F3/242
    • A frequency adjustable, zero temperature coefficient referencing ring oscillator circuit includes a plurality of inverter stages each having a switching circuit that produces the oscillating output signal for the ring oscillator circuit and a control circuit that controls the switching circuit to establish the frequency of the output signal, the control circuit including field-effect transistors which are operated as output resistance controllable devices and which have their operating points, and thus their output resistances, established by a reference voltage that is produced by a precision reference voltage generating circuit so that the operating frequency of the ring oscillator circuit can be set by adjusting the value of the reference signals produced by the precision reference signal generating circuit and is maintained at the setpoint value because the precision reference voltage generating circuit operates independently of variations in temperature and/or the power supply voltage. The ring oscillator circuit is fabricated as an integrated circuit device and the operating frequency of the integrated circuit ring oscillator circuit can be adjusted after fabrication and passivation of the integrated circuit device.
    • 频率可调,零温度系数参考环形振荡器电路包括多个反相器级,每个反相器级具有产生环形振荡器电路的振荡输出信号的开关电路和控制开关电路以建立输出信号频率的控制电路 所述控制电路包括作为输出电阻可控设备操作并具有其工作点的场效应晶体管,并且因此其输出电阻由由精密参考电压产生电路产生的参考电压建立,使得工作频率 可以通过调整精密基准信号发生电路产生的参考信号的值来设置环形振荡器电路,并且由于精密基准电压产生电路独立于温度和/或电源的变化而运行,因此保持在设定值 卷 天气好 环形振荡器电路被制造为集成电路器件,并且集成电路环形振荡器电路的工作频率可以在集成电路器件的制造和钝化之后被调整。
    • 119. 发明授权
    • Isotactic polypropylene nucleation
    • 全同立构聚丙烯成核
    • US09096747B2
    • 2015-08-04
    • US12013183
    • 2008-01-11
    • Derek ThurmanSudhin DattaWen LiCharles L. Sims
    • Derek ThurmanSudhin DattaWen LiCharles L. Sims
    • C08L23/04C08L23/10C08L23/14C08L23/12
    • C08L23/10C08L23/12C08L23/142C08L2205/02C08L2666/06
    • Low molecular weight semicrystalline propylene-alpha olefin copolymers containing propylene crystallinity are used as a nucleating agent in crystalline polypropylene and polypropylene copolymers. The nucleating copolymers are propylene-alpha olefin copolymers having a percent crystallinity of 5-75%, a melting point of 45° C.-105° C., and an MFR between 300 and 5000 g/10 min. Nucleated polypropylene compositions comprise a nucleating amount of the copolymer blended in a matrix of polypropylene homopolymer, or 0.01 to 9 wt % α-olefin copolymer, having a melting point greater than 110° C. The nucleating copolymer improves processing time with little or no effect on the crystallinity-associated characteristics of the matrix. The invention also provides methods of crystallizing polypropylene with the nucleating agent and of forming articles with the composition, and also provides articles formed from the composition and/or by the method.
    • 含有丙烯结晶度的低分子量半结晶丙烯-α烯烃共聚物用作结晶聚丙烯和聚丙烯共聚物中的成核剂。 成核共聚物是结晶度为5-75%,熔点为45℃-105℃,MFR为300-5000g / 10min的丙烯-α-烯烃共聚物。 成核聚丙烯组合物包含在聚丙烯均聚物基质中混合的成核量的共聚物,或熔点大于110℃的0.01至9重量%的α-烯烃共聚物。成核共聚物改善处理时间,几乎没有或没有效果 关于基质的结晶性相关特征。 本发明还提供了使聚丙烯与成核剂结晶并形成具有该组合物的制品的方法,还提供了由该组合物和/或该方法形成的制品。