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111. 发明授权

US06610463B1 Method of manufacturing structure having pores 有权
标题翻译：制造具有孔隙结构的方法
公开(公告)号：US06610463B1
公开(公告)日：2003-08-26
申请号：US09649598
申请日：2000-08-29
申请人： Hiroshi Ohkura , Tohru Den , Tatsuya Iwasaki
发明人： Hiroshi Ohkura , Tohru Den , Tatsuya Iwasaki
IPC分类号： H01L2102
CPC分类号： H01L21/0275 , H01L49/00 , Y10T428/12764 , Y10T428/24331 , Y10T428/2462 , Y10T428/24744
摘要： A method of manufacturing a nanostructure which enables cylindrical pores arrayed according to any periodic pattern to be easily made on a substrate through a large area at a low cost in a short time. The method of manufacturing a structure having such pores has the steps of preparing a substrate having recesses in its surface, providing a film on a surface of the substrate, and anodizing the film.
摘要翻译：制造纳米结构的方法，其使得能够在短时间内以低成本容易地在大面积上在基板上容易地制造根据任何周期性图案排列的圆柱形孔。制造具有这种孔的结构的方法具有以下步骤：在其表面上制备具有凹槽的基板，在基板的表面上提供膜，并阳极氧化该膜。

112. 发明授权

US06476409B2 Nano-structures, process for preparing nano-structures and devices 有权
标题翻译：纳米结构，制备纳米结构和器件的过程
公开(公告)号：US06476409B2
公开(公告)日：2002-11-05
申请号：US09553857
申请日：2000-04-21
申请人： Tatsuya Iwasaki , Tohru Den
发明人： Tatsuya Iwasaki , Tohru Den
IPC分类号： H01L2906
CPC分类号： B82Y20/00 , B82Y10/00 , B82Y25/00 , C25D11/045 , C25D11/16 , G02B6/1225 , G11B5/74 , G11B5/743 , G11B5/855 , G11B2005/0005 , H01F1/0081 , H01F10/007 , H01F10/324 , H01F41/30 , H01L33/18
摘要： The present invention provides a nano-structure which can be applied to various high-function devices. The nano-structure includes an anodically oxidized layer having a plurality of kinds of pores.
摘要翻译：本发明提供可应用于各种高功能器件的纳米结构。纳米结构包括具有多种孔的阳极氧化层。

113. 发明授权

US06203617B1 Conveying unit and substrate processing unit 失效
标题翻译：输送单元和基板处理单元
公开(公告)号：US06203617B1
公开(公告)日：2001-03-20
申请号：US09272315
申请日：1999-03-19
申请人： Shinya Tanoue , Shinichiro Araki , Tatsuya Iwasaki , Eiichiro Kamada
发明人： Shinya Tanoue , Shinichiro Araki , Tatsuya Iwasaki , Eiichiro Kamada
IPC分类号： B05C1100
CPC分类号： H01L21/67276 , H01L21/67271 , H01L21/68707 , Y10S414/137
摘要： The present invention is a conveying unit having a controller for detecting information corresponding to the thickness of each of a plurality of raw substrates, assigning desired identifiers to the raw substrates, storing the identifiers, and causing a conveyor to convey each of the raw substrates or controlling processing conditions for a plurality of processing chambers with the identifiers corresponding to the thickness of each of the raw substrates. Thus, even if one cassette accommodates a plurality of raw substrates, the conveyor can smoothly load the same type of raw substrates to the accommodating cassette and unload them therefrom in a simple structure. The controller sets desired processing conditions for each of the processing portions corresponding to the identifiers.
摘要翻译：本发明是一种输送单元，其具有用于检测与多个原始基板中的每一个的厚度对应的信息的控制器，将原始基板分配所需的标识符，存储标识符，并使输送机输送每个原始基板或控制具有对应于每个原始基板的厚度的标识符的多个处理室的处理条件。因此，即使一个盒子容纳多个原始基板，输送机也可以将相同类型的原始基板平滑地装载到收纳盒中，并以简单的结构将其卸载。控制器为与标识符对应的每个处理部分设置所需的处理条件。

114. 发明授权

US06187132B1 Substrate treatment device and substrate transporting method 失效
标题翻译：基板处理装置和基板输送方法
公开(公告)号：US06187132B1
公开(公告)日：2001-02-13
申请号：US09041450
申请日：1998-03-12
申请人： Tatsuya Iwasaki , Kiyohisa Tateyama
发明人： Tatsuya Iwasaki , Kiyohisa Tateyama
IPC分类号： C23F102
CPC分类号： H01L21/67028 , B65G47/918 , Y10S156/916 , Y10S438/905
摘要： A substrate treatment device comprises a transporting arm for transporting a substrate within the treatment device, a supporting member, which is disposed on the transporting arm, for supporting the substrate, and a cleaning mechanism, which is installed in the substrate treatment device, for cleaning the supporting member. Since the substrate treatment device is equipped with the cleaning mechanism for cleaning the supporting member, the supporting member can be cleaned as required. Therefore, since the substrate always can be held on a clean supporting member, the particles are prevented from depositing on the rear surface of the substrate.
摘要翻译：基板处理装置包括用于输送处理装置内的基板的输送臂，配置在输送臂上用于支撑基板的支撑部件，以及安装在基板处理装置中用于清洗的清洗机构支撑构件。由于基板处理装置配备有用于清洁支撑构件的清洁机构，所以可以根据需要清洁支撑构件。因此，由于基板总是可以保持在清洁的支撑构件上，所以防止了颗粒沉积在基板的后表面上。

115. 发明授权

US5345639A Device and method for scrubbing and cleaning substrate 失效
标题翻译：洗涤和清洁基材的装置和方法
公开(公告)号：US5345639A
公开(公告)日：1994-09-13
申请号：US69106
申请日：1993-05-28
申请人： Kouichi Tanoue , Shinzi Kitamura , Noriyuki Anai , Takami Satoh , Takayuki Tomoeda , Tatsuya Iwasaki , Kengo Mizosaki
发明人： Kouichi Tanoue , Shinzi Kitamura , Noriyuki Anai , Takami Satoh , Takayuki Tomoeda , Tatsuya Iwasaki , Kengo Mizosaki
IPC分类号： G02F1/1333 , H01L21/00 , A46B13/04
CPC分类号： H01L21/67051 , G02F1/1333 , H01L21/67046
摘要： A substrate scrubbing and cleaning device comprising a mechanism having an upper and a lower brush members for scrubbing both surfaces of an LCD glass substrate, a mechanism for rotating the upper and lower brush members, a mechanism for supplying pure water to the upper and lower brush members, a mechanism for carrying the substrate between the upper and the lower brush members to reciprocate it relative to the upper and lower brush members in a substrate carrying direction, and a controller for controlling the operation of the substrate carrying mechanism.
摘要翻译：一种基板洗涤和清洁装置，包括具有用于洗涤LCD玻璃基板的两个表面的上部和下部刷构件的机构，用于旋转上部和下部刷构件的机构，用于向上部和下部刷子提供纯水的机构构件，用于在基板传送方向上相对于上刷毛构件和下刷构件在上刷毛构件和下刷构件之间承载衬底往复运动的机构，以及用于控制衬底承载机构的操作的控制器。

116. 发明授权

US09134437B2 Radiation detecting device 有权
标题翻译：辐射检测装置
公开(公告)号：US09134437B2
公开(公告)日：2015-09-15
申请号：US13544096
申请日：2012-07-09
申请人： Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
发明人： Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
IPC分类号： G01N23/04 , G01T1/202
CPC分类号： G01T1/202
摘要： Provided is a radiation detecting device, including: a scintillator which emits light when radiation is irradiated thereto; and a photosensor array having light receiving elements for receiving the emitted light which are two-dimensionally arranged, in which: the scintillator has a phase separation structure for propagating the light emitted inside the scintillator in a light propagating direction, the phase separation structure being formed by embedding multiple columnar portions formed of a first material in a second material; the radiation is irradiated to the scintillator from a direction which is not in parallel to the light propagating direction; and the light emitted inside the scintillator is propagated through the scintillator in the light propagating direction and is received by the photosensor array which is placed so as to face an end face of the scintillator.
摘要翻译：本发明提供一种放射线检测装置，其特征在于，包括：闪光体，其在对其照射时发光; 以及具有用于接收二维布置的发射光的光接收元件的光传感器阵列，其中：闪烁体具有用于在光传播方向上传播闪烁体内的光的相分离结构，形成相分离结构通过在第二材料中嵌入由第一材料形成的多个柱状部分; 辐射从不与光传播方向平行的方向照射到闪烁体; 并且在闪烁体内发射的光在光传播方向上传播通过闪烁体，并被放置成面对闪烁体的端面的光电传感器阵列接收。

117. 发明授权

US08742412B2 Thin film transistor using an oxide semiconductor and display 有权
标题翻译：使用氧化物半导体和显示器的薄膜晶体管
公开(公告)号：US08742412B2
公开(公告)日：2014-06-03
申请号：US12809096
申请日：2009-01-30
申请人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
发明人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086
摘要： A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.
摘要翻译：薄膜晶体管包括形成在基板上的栅电极，栅极绝缘层，沟道层，源电极和漏电极，其中：沟道层包含铟，锗和氧; 并且沟道层具有由In /（In + Ge）表示的组成比为0.5以上且0.97以下。

118. 发明授权

US08314425B2 Field-effect transistor using amorphouse oxide 有权
标题翻译：使用氧化铝氧化物的场效应晶体管
公开(公告)号：US08314425B2
公开(公告)日：2012-11-20
申请号：US12747601
申请日：2009-01-20
申请人： Tatsuya Iwasaki , Amita Goyal , Naho Itagaki
发明人： Tatsuya Iwasaki , Amita Goyal , Naho Itagaki
IPC分类号： H01L29/04
CPC分类号： H01L29/7869
摘要： A field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate. The channel layer is made of an amorphous oxide material that contains at least In and B, and the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower.
摘要翻译：场效应晶体管至少包括形成在基板上的沟道层，栅极绝缘层，源电极，漏电极和栅电极。沟道层由至少含有In和B的无定形氧化物材料制成，无定形氧化物材料的元素比B /（In + B）为0.05以上且0.29以下。

119. 发明申请

US20120153277A1 CHANNEL-ETCH TYPE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：通道蚀刻型薄膜晶体管及其制造方法
公开(公告)号：US20120153277A1
公开(公告)日：2012-06-21
申请号：US13326859
申请日：2011-12-15
申请人： Seiichiro Yaginuma , Tatsuya Iwasaki , Ryo Hayashi , Hideya Kumomi , Masaya Watanabe
发明人： Seiichiro Yaginuma , Tatsuya Iwasaki , Ryo Hayashi , Hideya Kumomi , Masaya Watanabe
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78618
摘要： A channel layer is formed on a substrate by using an oxide semiconductor and then a sacrificial layer of an oxide containing In, Zn and Ga and representing an etching rate greater than the etching rate of the oxide semiconductor is formed on the channel layer. Thereafter, a source electrode and a drain electrode are formed on the sacrificial layer and the sacrificial layer exposed between the source electrode and the drain electrode is removed by means of wet etching.
摘要翻译：通过使用氧化物半导体在衬底上形成沟道层，然后在沟道层上形成包含In，Zn和Ga的氧化物的牺牲层，并且表现出大于氧化物半导体的蚀刻速率的蚀刻速率。此后，在牺牲层上形成源电极和漏电极，通过湿蚀刻去除在源电极和漏电极之间露出的牺牲层。

120. 发明授权

US08188467B2 Amorphous oxide and field effect transistor 有权
标题翻译：无定形氧化物和场效应晶体管
公开(公告)号：US08188467B2
公开(公告)日：2012-05-29
申请号：US12597934
申请日：2008-05-22
申请人： Naho Itagaki , Tatsuya Iwasaki
发明人： Naho Itagaki , Tatsuya Iwasaki
IPC分类号： H01L29/22
CPC分类号： H01L29/7869 , H01L29/247
摘要： In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.
摘要翻译：在场效应晶体管中，场效应晶体管的沟道层由包括In，Zn，N和O的无定形氧化物，N与N的原子组成比和O（N /（N + O））的原子组成比组成无定形氧化物等于或大于0.01原子％且等于或小于3原子％，并且非晶氧化物不包括Ga，或者在非晶氧化物包括Ga的情况下，包含在无定形氧化物小于N原子数。

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