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111. 发明申请

US20060175597A1 Phase change memory cell with high read margin at low power operation 有权
标题翻译：在低功率运行时具有高读余量的相变存储单元
公开(公告)号：US20060175597A1
公开(公告)日：2006-08-10
申请号：US11102350
申请日：2005-04-08
申请人： Thomas Happ
发明人： Thomas Happ
IPC分类号： H01L29/02 , H01L21/76
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A memory cell device includes a first electrode, a heater adjacent the first electrode, phase-change material adjacent the heater, a second electrode adjacent the phase-change material, and isolation material adjacent the phase-change material for thermally isolating the phase-change material.
摘要翻译：存储单元装置包括第一电极，与第一电极相邻的加热器，与加热器相邻的相变材料，与相变材料相邻的第二电极以及与相变材料相邻的隔离材料，用于热隔离相变材料。

112. 发明授权

US07023008B1 Resistive memory element 失效
标题翻译：电阻记忆元件
公开(公告)号：US07023008B1
公开(公告)日：2006-04-04
申请号：US10953606
申请日：2004-09-30
申请人： Thomas Happ
发明人： Thomas Happ
IPC分类号： H01L47/00
CPC分类号： G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： An electrically operated, resistive memory element includes a volume of resistive memory material, adapted to be switched between different detectable resistive states in response to selected enery pulses; means for delivering electrical signals to at least a portion of the volume of resistive memory material; and a volume of heating material for Ohmic heating of the resistive memory material in response to the electrical signals. The volume of heating material is embedded in the volume of resistive memory material.
摘要翻译：电操作的电阻式存储元件包括一定体积的电阻性存储器材料，适于响应于所选择的功能脉冲在不同的可检测电阻状态之间切换; 用于将电信号传送到所述体积的电阻性存储器材料的至少一部分的装置; 以及用于响应于电信号对电阻式存储器材料进行欧姆加热的加热材料的体积。加热材料的体积被嵌入电阻记忆材料的体积中。

113. 发明申请

US20060049390A1 Resistively switching nonvolatile memory cell based on alkali metal ion drift 审中-公开
标题翻译：基于碱金属离子漂移电阻开关非易失性存储单元
公开(公告)号：US20060049390A1
公开(公告)日：2006-03-09
申请号：US11209026
申请日：2005-08-23
申请人： Klaus Ufert , Cay-Uwe Pinnow , Thomas Happ
发明人： Klaus Ufert , Cay-Uwe Pinnow , Thomas Happ
IPC分类号： H01L47/00
CPC分类号： G11C13/0002 , G11C13/0009 , G11C13/0069 , G11C2013/009 , G11C2213/11 , G11C2213/56 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile, resistively switching memory cell includes a layer arranged between a first electrode and a second electrode. The layer includes one or more chalcogenide compound(s) selected from the group consisting of CuInS, CuInSe, CdInS, CdInSe, ZnInS, MnInS, MnZnInS, ZnInSe, InS, InSSe and InSe, with alkali metal or alkaline-earth metal ions contained in the layer of the chalcogenide compound(s).
摘要翻译：非易失性电阻开关存储单元包括布置在第一电极和第二电极之间的层。该层包括选自CuInS，CuInSe，CdInS，CdInSe，ZnInS，MnInS，MnZnInS，ZnInSe，InS，InSSe和InSe中的一种或多种硫属化物化合物，其中包含碱金属或碱土金属离子硫族化合物的层。

114. 发明申请

US20060043354A1 Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers 失效
标题翻译：用于优化薄硫族化物层的热稳定性的反应溅射工艺
公开(公告)号：US20060043354A1
公开(公告)日：2006-03-02
申请号：US11214023
申请日：2005-08-30
申请人： Cay-Uwe Pinnow , Thomas Happ
发明人： Cay-Uwe Pinnow , Thomas Happ
IPC分类号： H01L29/02
CPC分类号： C23C14/0623 , C23C16/305 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： A chalcogenide layer includes a composition of compounds having the formula MmX1-m, where M denotes one or more elements selected from the group consisting of group IVb elements of the periodic system, group Vb elements of the periodic system and transition metals, X denotes one or more elements selected from the group consisting of S, Se and Te, and m has a value of between 0 and 1. The chalcogenide layer further includes an oxygen or nitrogen content in the range from 0.001 atomic % to 75 atomic %.
摘要翻译：硫族化物层包括具有式M 1 X 1-m的化合物的组合物，其中M表示一种或多种选自下组的IVb族元素：周期性系统，Vb族元素和过渡金属，X表示选自S，Se和Te中的一种或多种元素，m具有0和1之间的值。硫族化物层还包括氧或氮含量在0.001原子％至75原子％的范围内。

115. 发明申请

US20050219800A1 Switching device for configurable interconnect and method for preparing the same 失效
标题翻译：用于可配置互连的交换设备及其制备方法
公开(公告)号：US20050219800A1
公开(公告)日：2005-10-06
申请号：US10812991
申请日：2004-03-31
申请人： Thomas Happ , Thomas Roehr
发明人： Thomas Happ , Thomas Roehr
IPC分类号： H01G9/025 , H01G9/04 , H01G9/15 , H01G9/22 , H01L23/525 , H01L27/24
CPC分类号： H01G9/22 , H01G9/025 , H01G11/02 , H01G11/08 , H01G11/32 , H01G11/56 , H01L23/5252 , H01L2924/0002 , Y02E60/13 , H01L2924/00
摘要： The present invention relates to a switching device to be irreversibly switched from an electrically isolating off-state into an electrically conducting on-state for use in a configurable interconnect, comprising two separate electrodes, at least one of which being a reactive metal electrode, and a solid state electrolyte arranged between said electrodes and being capable of electrolyte isolating said electrodes to define said off-state, said electrodes and said solid state electrolyte forming a redox-system having a mini-mum voltage (“turn-on voltage”) to start a redox reaction, the redox reaction resulting in the generation of metal ions to be released into said solid state electrolyte, the metal ions being reduced to increase a metal concentration within said solid state electrolyte, wherein an increase of said metal concentration results in a conductive metallic connection bridging the electrodes to define the on-state.
摘要翻译：本发明涉及一种从电绝缘断开状态不可逆地切换到用于可配置互连中的导电导通状态的开关装置，包括两个单独的电极，其中至少一个电极是反应性金属电极，以及布置在所述电极之间并且能够电隔离所述电极以限定所述截止状态的固态电解质，所述电极和所述固态电解质形成具有最小电压（“导通电压”）的氧化还原系统以开始氧化还原反应，氧化还原反应导致产生将被释放到所述固态电解质中的金属离子，金属离子被还原以增加所述固态电解质中的金属浓度，其中所述金属浓度的增加导致导电金属连接桥接电极以限定导通状态。

116. 发明申请

US20130319518A1 SOLAR MODULE WITH A CONNECTING ELEMENT 审中-公开
标题翻译：具有连接元件的太阳能模块
公开(公告)号：US20130319518A1
公开(公告)日：2013-12-05
申请号：US13878174
申请日：2011-10-24
申请人： Matthias Doech , Christoph Degen , Robert Gass , Thomas Happ , Franz Karg , Lothar Lesmeister , Jan Boris Philipp , Mitja Rateiczak , Jaap Van Der Burgt , Andreas Schlarb , Bernhard Reul
发明人： Matthias Doech , Christoph Degen , Robert Gass , Thomas Happ , Franz Karg , Lothar Lesmeister , Jan Boris Philipp , Mitja Rateiczak , Jaap Van Der Burgt , Andreas Schlarb , Bernhard Reul
IPC分类号： H01L31/0224
CPC分类号： H01L31/022441 , H01L31/02008 , H02S40/34 , Y02E10/50
摘要： A solar module having a connecting element is described. The solar module has a substrate, a back electrode layer, a photovoltaically active absorber layer, and a cover pane disposed one over the other, at least one prefabricated conductive film at least one connection housing.
摘要翻译：描述具有连接元件的太阳能模块。太阳能组件具有基板，背面电极层，光伏活性吸收层和一个彼此重叠设置的至少一个预制导电膜，至少一个连接壳体。

117. 发明申请

US20130045558A1 DEVICE AND METHOD FOR PRECIPITATING A LAYER ON A SUBSTRATE 审中-公开
标题翻译：用于在基板上预处理层的装置和方法
公开(公告)号：US20130045558A1
公开(公告)日：2013-02-21
申请号：US13580241
申请日：2011-02-22
申请人： Joerg Palm , Stephan Pohlner , Stefan Jost , Thomas Happ
发明人： Joerg Palm , Stephan Pohlner , Stefan Jost , Thomas Happ
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C14/0617 , C23C14/0623 , C23C14/54 , C23C14/564 , C23C16/4412 , C30B23/005 , C30B29/48
摘要： A device for depositing a layer containing at least two components on an object, including: a deposition chamber; a source containing a material to be deposited; and a control device, which controls the deposition process, implemented such that a concentration of the component of the material can be modified in its gas phase prior to deposition on the object by selective binding a specified quantity of the component, wherein the selectively bound quantity of the component is controlled by modifying a control parameter that is actively coupled to a binding rate or the component, and wherein the control device contains a gettering element containing a reactive material containing copper and/or molybdenum. Also, a method for depositing a layer containing at least two components on an object, wherein a selectively bound quantity of a component is controlled by modifying a binding rate of the component of the control device.
摘要翻译：一种用于在物体上沉积包含至少两个组分的层的装置，包括：沉积室; 含有待沉积材料的来源; 以及控制装置，其控制沉积过程，其被实施为使得在通过选择性地结合指定量的组分之前，在沉积到物体上之前，可以在其气相中改变材料成分的浓度，其中选择性结合量通过修改主动耦合到结合速率或部件的控制参数来控制部件，并且其中控制装置包含含有含有铜和/或钼的反应性材料的吸杂元件。另外，一种用于在物体上沉积含有至少两种成分的层的方法，其中通过改变控制装置的部件的结合速率来控制选择性限制量的部件。

118. 发明授权

US08003971B2 Integrated circuit including memory element doped with dielectric material 有权
标题翻译：集成电路，包括用介电材料掺杂的存储元件
公开(公告)号：US08003971B2
公开(公告)日：2011-08-23
申请号：US12051437
申请日：2008-03-19
申请人： Thomas Happ , Jan Boris Philipp
发明人： Thomas Happ , Jan Boris Philipp
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1641 , H01L45/165 , H01L45/1683
摘要： An integrated circuit includes a first electrode, a second electrode, and a damascene structured memory element coupled to the first electrode and the second electrode. The memory element has a height and a width. The height is greater than or equal to the width. The memory element includes resistance changing material doped with dielectric material.
摘要翻译：集成电路包括耦合到第一电极和第二电极的第一电极，第二电极和镶嵌结构的存储元件。存储元件具有高度和宽度。高度大于或等于宽度。存储元件包括掺杂介电材料的电阻变化材料。

119. 发明授权

US07977661B2 Memory having shared storage material 有权
标题翻译：内存共享存储资料
公开(公告)号：US07977661B2
公开(公告)日：2011-07-12
申请号：US11759446
申请日：2007-06-07
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
IPC分类号： H01L21/00
CPC分类号： H01L45/144 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/148 , H01L45/1666
摘要： An integrated circuit includes a bit line, a plurality of access devices coupled to the bit line, and a plate of phase change material. The integrated circuit includes a plurality of phase change elements contacting the plate of phase change material and a plurality of first contacts. Each first contact is coupled between an access device and a phase change element.
摘要翻译：集成电路包括位线，耦合到位线的多个访问设备和相变材料板。集成电路包括与相变材料板接触的多个相变元件和多个第一触点。每个第一触点耦合在接入设备和相变元件之间。

120. 发明授权

US07939817B2 Integrated circuit including memory element with spatially stable material 有权
标题翻译：集成电路，包括具有空间稳定材料的存储元件
公开(公告)号：US07939817B2
公开(公告)日：2011-05-10
申请号：US12167886
申请日：2008-07-03
申请人： Dieter Andres , Thomas Happ , Petra Majewski , Bernhard Ruf
发明人： Dieter Andres , Thomas Happ , Petra Majewski , Bernhard Ruf
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148
摘要： An integrated circuit includes a heater element serving as a first electrode, a second electrode, a memory element comprising resistance changing material coupled to the heater element and to the second electrode, and a diffusion compensation region coupled to the heater element and to the resistance changing material. The diffusion compensation region includes a surplus of at least one diffusible species present in the memory element and provides at least one diffusible species to the memory element.
摘要翻译：集成电路包括用作第一电极的加热器元件，第二电极，包括耦合到加热器元件和第二电极的电阻改变材料的存储元件，以及耦合到加热元件的扩散补偿区域和电阻变化材料。扩散补偿区域包括存储在存储元件中的至少一种可扩散物质的剩余，并且向存储元件提供至少一个可扩散物质。

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