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    • 111. 发明授权
    • Methods of forming through-substrate interconnects
    • 形成贯穿衬底互连的方法
    • US07566657B2
    • 2009-07-28
    • US11654338
    • 2007-01-17
    • Theodore I. Kamins
    • Theodore I. Kamins
    • H01L21/44
    • H01L21/76898H01L24/82H01L2221/1094H01L2924/14Y10S977/89Y10S977/892H01L2924/00
    • In one embodiment of a method of forming at least one through-substrate interconnect, a semiconductor substrate having first surface and an opposing second surface is provided. At least one opening is formed in the semiconductor substrate to extend from the first surface to an intermediate depth within the semiconductor substrate. The at least one opening is partially defined by a base. At least one metal-catalyst nanoparticle is provided on the base. Conductive material is deposited within the at least one opening under conditions in which the metal-catalyst nanoparticle promotes deposition of the conductive material. Material of the semiconductor substrate may be removed from the second surface to expose a portion of the conductive material filling the at least one opening. In another embodiment, instead of using the nanoparticle, the conductive material may be selected to selectively deposit on the base partially defining the at least one opening.
    • 在形成至少一个贯穿衬底互连的方法的一个实施例中,提供了具有第一表面和相对的第二表面的半导体衬底。 在半导体衬底中形成至少一个开口,以从半导体衬底内的第一表面延伸到中间深度。 至少一个开口部分地由基座限定。 在基底上提供至少一种金属催化剂纳米颗粒。 在金属催化剂纳米颗粒促进导电材料的沉积的条件下,导电材料沉积在至少一个开口内。 可以从第二表面去除半导体衬底的材料以暴露填充至少一个开口的导电材料的一部分。 在另一个实施方案中,代替使用纳米颗粒,可以选择导电材料以选择性地沉积在部分限定至少一个开口的基部上。
    • 117. 发明申请
    • COMPOSITE NANOSTRUCTURE APPARATUS AND METHOD
    • 复合纳米结构装置及方法
    • US20080081388A1
    • 2008-04-03
    • US11537589
    • 2006-09-29
    • Amir A. YasseriTheodore I. KaminsShashank Sharma
    • Amir A. YasseriTheodore I. KaminsShashank Sharma
    • H01L21/00
    • B82Y40/00B82Y10/00B82Y20/00G01N21/658H01L29/0676Y10S977/857
    • A metal is deposited onto a surface electrochemically using a deposition solution including a metal salt. In making a composite nanostructure, the solution further includes an enhancer that promotes electrochemical deposition of the metal on the nanostructure. In a method of forming catalyzing nanoparticles, the metal preferentially deposits on a selected location of a surface that is exposed through a mask layer instead of on unexposed surfaces. A composite nanostructure apparatus includes an array of nanowires and the metal deposited on at least some nanowire surfaces. Some of the nanowires are heterogeneous, branched and include different adjacent axial segments with controlled axial lengths. In some deposition solutions, the enhancer one or both of controls oxide formation on the surface and causes metal nanocrystal formation. The deposition solution further includes a solvent that carries the metal salt and the enhancer.
    • 使用包含金属盐的沉积溶液电化学地将金属沉积在表面上。 在制备复合纳米结构时,溶液还包括促进金属在纳米结构上的电化学沉积的增强剂。 在形成催化纳米颗粒的方法中,金属优先沉积在通过掩模层而不是未暴露的表面暴露的表面的选定位置。 复合纳米结构设备包括纳米线阵列和沉积在至少一些纳米线表面上的金属。 一些纳米线是异质的,分支的并且包括具有受控轴向长度的不同的相邻轴向段。 在一些沉积溶液中,增强剂中的一个或两个控制表面上的氧化物形成并引起金属纳米晶体的形成。 沉积溶液还包括携带金属盐和增强剂的溶剂。