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111. 发明授权

US07679116B2 Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system 有权
标题翻译：光电转换装置，光电转换装置的制造方法以及摄像系统
公开(公告)号：US07679116B2
公开(公告)日：2010-03-16
申请号：US12326138
申请日：2008-12-02
申请人： Hiroshi Yuzurihara , Ryuichi Mishima , Takanori Watanabe , Takeshi Ichikawa , Seiichi Tamura
发明人： Hiroshi Yuzurihara , Ryuichi Mishima , Takanori Watanabe , Takeshi Ichikawa , Seiichi Tamura
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2
摘要翻译：一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域底物。对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：C2

112. 发明申请

US20090303365A1 SOLID-STATE IMAGING APPARATUS, DRIVING METHOD THEREOF AND IMAGING SYSTEM 有权
标题翻译：固态成像装置，其驱动方法和成像系统
公开(公告)号：US20090303365A1
公开(公告)日：2009-12-10
申请号：US12476487
申请日：2009-06-02
申请人： Takanori Watanabe
发明人： Takanori Watanabe
IPC分类号： H04N5/335 , H01L27/00
CPC分类号： H04N5/2357 , H01L27/14641 , H04N5/353 , H04N5/3532 , H04N5/37457
摘要： A solid-state imaging apparatus includes: a plurality of photoelectric conversion elements arranged in a matrix and converting light into electric carriers; a transfer gate for transferring the electric carriers generated by the conversion to a floating node; a first transistor for amplifying a signal based on a voltage of the floating node and for outputting the amplified signal to a column signal line; and a second transistor for resetting the voltage of the floating node, wherein the solid-state imaging apparatus includes a transfer unit for combining signals from the column signal lines, based on the voltage of the floating nodes after the reset of the floating nodes by the second transistor, wherein outputting a signal based on the combined signals from the column signal lines based on the voltage of the floating nodes, for detecting a flicker of an imaging light source.
摘要翻译：一种固态成像装置，包括：多个光电转换元件，其以矩阵形式排列并将光转换成电载体; 用于将通过转换生成的电载体传送到浮动节点的传输门; 第一晶体管，用于基于浮动节点的电压放大信号，并将放大的信号输出到列信号线; 以及用于复位浮动节点的电压的第二晶体管，其中所述固态成像装置包括用于组合来自所述列信号线的信号的转移单元，所述转移单元基于所述浮动节点复位之后的所述浮动节点的电压，第二晶体管，其基于来自所述列信号线的组合信号，基于所述浮动节点的电压输出用于检测成像光源的闪烁的信号。

113. 发明申请

US20090256230A1 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS 有权
标题翻译：使用光电转换装置的光电转换装置和成像系统
公开(公告)号：US20090256230A1
公开(公告)日：2009-10-15
申请号：US12412442
申请日：2009-03-27
申请人： Takanori Watanabe
发明人： Takanori Watanabe
IPC分类号： H01L31/0232 , H01L31/101 , G01J1/44
CPC分类号： H01L27/1463 , H01L27/146 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/14806 , H01L27/14812 , H01L29/76808 , H01L31/101
摘要： In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal to or deeper than the depth of the semiconductor region in comparison with the semiconductor region.
摘要翻译：在包括电荷保持部分的光电转换装置中，与构成电荷保持部分的半导体区域接触的元件隔离区域的一部分从包括光电转换元件的光接收表面的参考表面延伸到半导体衬底中与半导体区域相比等于或深于半导体区域的深度。

114. 发明授权

US07473948B2 Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system 失效
标题翻译：光电转换装置，光电转换装置的制造方法以及摄像系统
公开(公告)号：US07473948B2
公开(公告)日：2009-01-06
申请号：US11941675
申请日：2007-11-16
申请人： Hiroshi Yuzurihara , Ryuichi Mishima , Takanori Watanabe , Takeshi Ichikawa , Seiichi Tamura
发明人： Hiroshi Yuzurihara , Ryuichi Mishima , Takanori Watanabe , Takeshi Ichikawa , Seiichi Tamura
IPC分类号： H01L29/06
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2
摘要翻译：一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域底物。对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：<？in-line-formula description =“In-line Formulas”end =“lead”？> C2

115. 发明申请

US20080029793A1 PHOTOELECTRIC CONVERSION DEVICE METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM 有权
标题翻译：用于生产光电转换装置和图像拾取系统的光电转换装置方法
公开(公告)号：US20080029793A1
公开(公告)日：2008-02-07
申请号：US11774270
申请日：2007-07-06
申请人： Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
发明人： Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
IPC分类号： H01L31/0232
CPC分类号： H01L27/14616 , H01L27/14609 , H01L27/14612 , H01L27/14689
摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.
摘要翻译：光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

116. 发明申请

US20080029787A1 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS 有权
标题翻译：使用光电转换装置的光电转换装置和图像拾取系统
公开(公告)号：US20080029787A1
公开(公告)日：2008-02-07
申请号：US11776289
申请日：2007-07-11
申请人： Takanori Watanabe , Masaaki Iwane , Yukihiro Kuroda , Masahiro Kobayashi
发明人： Takanori Watanabe , Masaaki Iwane , Yukihiro Kuroda , Masahiro Kobayashi
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14641
摘要： A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor.
摘要翻译：一种光电转换装置，包括将入射光转换成电载体的多个光电转换元件，由多个光电转换元件共用的放大器MOS晶体管，与放大器MOS晶体管的栅电极连接的多个浮置扩散，以及对应于各个光电转换元件布置的多个传输MOS晶体管，每个传输MOS晶体管将电载体从相应的一个光电转换元件传输到相应的一个浮置扩散。在这种光电转换装置中，至少两个浮置扩散部通过与放大器MOS晶体管的栅电极相同的布线层所包含的布线彼此电连接。

117. 发明申请

US20060097396A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060097396A1
公开(公告)日：2006-05-11
申请号：US11240645
申请日：2005-10-03
申请人： Masamichi Kamiyama , Masashi Takase , Takanori Watanabe
发明人： Masamichi Kamiyama , Masashi Takase , Takanori Watanabe
IPC分类号： H01L23/52
CPC分类号： H01L24/05 , H01L23/4824 , H01L23/53214 , H01L23/53228 , H01L24/03 , H01L2224/02166 , H01L2224/05006 , H01L2224/05093 , H01L2224/05096 , H01L2224/05147 , H01L2224/05554 , H01L2224/05624 , H01L2224/45124 , H01L2224/48724 , H01L2224/48824 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/00 , H01L2224/48
摘要： In a semiconductor device including a multilayer pad, the multilayer pad comprises a first pad layer provided over a semiconductor substrate to have a first copper wiring region and a first intralayer insulating region provided within the first copper wiring region, and a second pad layer provided over the first pad layer via an interlayer insulating film to have a second copper wiring region and a second intralayer insulating region provided within the second copper wiring region. In the semiconductor device, the first copper wiring region, the first intralayer insulating region, the second copper wiring region, and the second intralayer insulating region are provided in the first and second pad layers such that the multilayer pad has a layout in which all the regions are covered with the copper wiring when the multilayer pad is perspectively viewed from a perpendicularly upper direction for the semiconductor substrate.
摘要翻译：在包括多层衬垫的半导体器件中，多层衬垫包括设置在半导体衬底上的第一衬底层，其具有设置在第一铜布线区域内的第一铜布线区域和第一层间绝缘区域，以及设置在第一铜布线区域上的第二衬垫层所述第一焊盘层经由层间绝缘膜，以具有设置在所述第二铜布线区域内的第二铜布线区域和第二层间绝缘区域。在半导体装置中，在第一和第二焊盘层中设置第一铜布线区域，第一层内绝缘区域，第二铜布线区域和第二层间绝缘区域，使得多层焊盘具有布局，其中，当从半导体衬底的垂直上方观察多层衬垫时，用铜布线覆盖区域。

118. 发明申请

US20060022691A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060022691A1
公开(公告)日：2006-02-02
申请号：US11242082
申请日：2005-10-04
申请人： Takanori Watanabe , Masashi Takase , Noboru Kosugi
发明人： Takanori Watanabe , Masashi Takase , Noboru Kosugi
IPC分类号： G01R31/02
CPC分类号： G01R31/2884 , H01L22/32 , H01L24/05 , H01L2224/02166 , H01L2224/05553 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01074
摘要： It is able to restrict increase of a chip area even if the pad pitch is reduced and the pad length is increased in a semiconductor device by arranging pads (4, 5), comprising electrically connected first and second regions having different number of wiring layers, above an I/O circuit (2).
摘要翻译：即使通过布置包括具有不同数量的布线层的电连接的第一和第二区域的焊盘（4,5），即使焊盘间距减小并且半导体器件中的焊盘长度增加，也能够限制芯片面积的增加，在I / O电路（2）之上。

119. 发明授权

US06731337B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US06731337B2
公开(公告)日：2004-05-04
申请号：US10191509
申请日：2002-07-10
申请人： Takanori Watanabe
发明人： Takanori Watanabe
IPC分类号： H04N314
CPC分类号： H01L27/14609 , H04N5/335
摘要： A solid-state imaging device includes a photodiode including a well region of a first conductivity type, a first impurity region of a second conductivity type, and a heavily doped impurity region of a first conductivity type formed on the first impurity region. The solid-state imaging device further includes a gate electrode that transfers charges accumulated in the photodiode and a readout region composed of an impurity region of a second conductivity type. A second impurity region of a second conductivity type extends from the first impurity region of a second conductivity type to the readout region. Furthermore, an impurity region of a first conductivity type is formed below the gate electrode. This configuration facilitates complete charge transfer from the photodiode in a readout process. This solid-state imaging device barely generates random noise and can pick up moving images with high definition.
摘要翻译：固态成像装置包括光电二极管，其包括第一导电类型的阱区，第二导电类型的第一杂质区和形成在第一杂质区上的第一导电类型的重掺杂杂质区。固态成像装置还包括传输在光电二极管中累积的电荷的栅电极和由第二导电类型的杂质区构成的读出区。第二导电类型的第二杂质区从第二导电类型的第一杂质区延伸到读出区。此外，在栅电极下方形成第一导电类型的杂质区。该配置便于在读出过程中从光电二极管完成电荷转移。这种固态成像装置几乎不产生随机噪声，可以拾取高分辨率的运动图像。

120. 发明授权

US06618203B2 Device for supporting combiner for use in vehicle display system 有权
公开(公告)号：US06618203B2
公开(公告)日：2003-09-09
申请号：US10103812
申请日：2002-03-25
申请人： Go Nakamura , Kunimitsu Aoki , Tetsuya Sugiyama , Kousuke Kinoshita , Takanori Watanabe , Yoshihide Takada
发明人： Go Nakamura , Kunimitsu Aoki , Tetsuya Sugiyama , Kousuke Kinoshita , Takanori Watanabe , Yoshihide Takada
IPC分类号： G02B2712
CPC分类号： G02B27/0149
摘要： In the developed state of the combiner 13, the first arm 19 extends along a vertical line passing the center of gravity G of the combiner 13, and the second arm 21 and the third arm 23 are aligned on and extended along a line which couples the rear end of the base member 17 and the other end 19b of the first arm 19 and tilts from the vertical direction toward the horizontal direction so that the combiner 13 is arranged in front of the eye point I at a tilting angle of reflecting the image light of the displayed image emitted from the display device of the projector unit 9 toward the eye point I of the driver 3. In such a configuration, the virtual image of the displayed image on the combiner which is to be visually recognized from the eye point can be visually recognized stable with no shaking in a vehicle which is susceptible to the vibration from the road face.

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