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111. 发明申请

US20070176264A1 Resistive random access memory device including an amorphous solid electrolyte layer 审中-公开
标题翻译：包括无定形固体电解质层的电阻式随机存取存储器件
公开(公告)号：US20070176264A1
公开(公告)日：2007-08-02
申请号：US11653316
申请日：2007-01-16
申请人： Jung-hyun Lee , Sang-jun Choi
发明人： Jung-hyun Lee , Sang-jun Choi
IPC分类号： H01L29/22
CPC分类号： H01L45/04 , H01L45/145
摘要： Provided is a resistive memory device including an amorphous solid electrolyte layer in a storage node. The resistive memory device includes a switching device and a storage node connected to the switching device. The storage node includes upper and lower electrodes formed of a bivalent or multivalent metal, and an amorphous solid electrolyte layer and an ion source layer formed of a monovalent metal between the upper and lower electrodes.
摘要翻译：提供了一种在存储节点中包括无定形固体电解质层的电阻式存储器件。电阻式存储器件包括连接到开关器件的开关器件和存储节点。存储节点包括由二价或多价金属形成的上电极和下电极，以及在上电极和下电极之间由非金属固体电解质层和由一价金属形成的离子源层。

112. 发明授权

US07132710B2 Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device 有权
标题翻译：具有相同的电容器，半导体器件以及半导体器件的制造方法
公开(公告)号：US07132710B2
公开(公告)日：2006-11-07
申请号：US10902824
申请日：2004-08-02
申请人： Hion-suck Baik , Jung-hyun Lee , Jong-bong Park , Yun-chang Park
发明人： Hion-suck Baik , Jung-hyun Lee , Jong-bong Park , Yun-chang Park
IPC分类号： H01L29/92
CPC分类号： H01L28/75 , H01L21/28556 , H01L27/10852 , H01L27/10855 , H01L28/55 , H01L28/65 , H01L28/90 , H01L28/91
摘要： A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower electrode formed of a metal containing aluminum on the interlayer dielectric film; a dielectric layer formed on the lower electrode; an upper electrode formed on the dielectric layer; and a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode. The method includes: forming a gate structure and an active region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the active region; forming a mold oxidation layer on the plug and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.
摘要翻译：提供具有由铝掺杂金属形成的下电极的堆叠型电容器的半导体器件及其制造方法。半导体器件包括：具有栅极结构和有源区的半导体衬底; 形成在有源区上的层间绝缘膜; 在层间电介质膜上由含有铝的金属形成的下电极; 形成在下电极上的电介质层; 形成在电介质层上的上电极; 以及形成在所述层间电介质膜中以将所述有源区电连接到所述下电极的插塞。该方法包括：在半导体衬底上形成栅极结构和有源区; 在所得半导体衬底上形成层间绝缘膜; 在所述层间电介质膜中形成插塞以与所述有源区电连接; 在插塞和层间电介质膜上形成模具氧化层; 以预定图案图案化模具氧化层，并在插头上形成含有铝的材料的下电极; 并且在下电极上依次形成电介质层和上电极。

113. 发明申请

US20060209495A1 Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof 有权
公开(公告)号：US20060209495A1
公开(公告)日：2006-09-21
申请号：US11364182
申请日：2006-03-01
申请人： Jung-hyun Lee , Kyu-sik Kim
发明人： Jung-hyun Lee , Kyu-sik Kim
IPC分类号： H01G9/00
CPC分类号： H01C7/006 , G11C11/56 , G11C13/0009 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/1616
摘要： The semiconductor memory device includes a variable resistance device having a solid electrolyte in a three-dimensional structure. The variable resistance device includes a first electrode; the solid electrolyte, which has at least two regions with different heights, formed on the first electrode; and a second electrode made of a conductive material formed on the solid electrolyte to cover the regions with different heights. In addition, a multibit semiconductor memory device is provided which includes a bias circuit that can control the intensity of a current and time the current is supplied to the variable resistance device inside a memory cell in multiple steps to configure multibits.

114. 发明申请

US20060170033A1 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20060170033A1
公开(公告)日：2006-08-03
申请号：US11252766
申请日：2005-10-19
申请人： Jung-hyun Lee , Kyu-sik Kim
发明人： Jung-hyun Lee , Kyu-sik Kim
IPC分类号： H01L29/792
CPC分类号： H01L29/513 , H01L21/28185 , H01L21/28194 , H01L21/28282 , H01L29/42332 , H01L29/517 , H01L29/792
摘要： A nonvolatile memory device and a method of manufacturing the same are provided. The nonvolatile memory device includes a semiconductor substrate on which a source region, a drain region, and a channel region are formed, a silicon oxide layer formed on the channel region, a transition metal oxide layer having trap particles that trap electrons, formed on the silicon oxide layer, and a gate electrode formed on the transition metal oxide layer.
摘要翻译：提供了一种非易失性存储器件及其制造方法。非易失性存储器件包括其上形成有源极区，漏极区和沟道区的半导体衬底，形成在沟道区上的氧化硅层，形成在阱区上的捕获电子的过渡金属氧化物层氧化硅层和形成在过渡金属氧化物层上的栅电极。

115. 发明申请

US20060157861A1 Ti precursor, method of preparing the same, method of preparing Ti-containing thin layer by employing the Ti precursor and Ti-containing thin layer 有权
标题翻译： Ti前体，其制备方法，采用Ti前体和含Ti薄层制备含Ti薄层的方法
公开(公告)号：US20060157861A1
公开(公告)日：2006-07-20
申请号：US11282486
申请日：2005-11-21
申请人： Sung-ho Park , Jung-hyun Lee
发明人： Sung-ho Park , Jung-hyun Lee
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： C07F17/00 , C23C16/18 , C23C16/405
摘要： A Ti-precursor for forming a Ti-containing thin layer represented by the formula I below, a method of preparing the same, a method of preparing a Ti-containing thin layer by employing the Ti-precursor and the Ti-containing thin layer are provided: wherein X1 and X2 are independently F, Cl, Br or I; n is 0, 1, 2, 3, 4 or 5; m is 0, 1, 2, 3, 4, 5, 6 or 7; and R1 and R2 are independently a linear or branched C1-10 alkyl group. The Ti precursor for forming the Ti-containing thin layer can be deposited at a deposition temperature of approximately 150° C.˜200° C., and a Ti-containing thin layer with a high performance character can be prepared.
摘要翻译：用于形成由下式I表示的含Ti薄层的Ti前体，其制备方法，通过使用Ti前体和含Ti薄层制备含Ti薄层的方法是其中X 1和X 2各自独立地为F，Cl，Br或I; n为0，1，2，3，4或5; m为0,1,2,3,4,5,6或7; R 1和R 2分别独立地为直链或支链C 1-10烷基。用于形成含Ti薄层的Ti前体可以在约150℃〜200℃的沉积温度下沉积，并且可以制备具有高性能特征的含钛薄层。

116. 发明申请

US20060118891A1 Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor 有权
标题翻译：氧化铪前体和使用前体形成氧化铪膜的方法
公开(公告)号：US20060118891A1
公开(公告)日：2006-06-08
申请号：US11340692
申请日：2006-01-27
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L21/16
CPC分类号： H01L21/02181 , C01G27/02 , C01G27/04 , C01P2006/80 , C07F7/003 , H01L21/02205 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/517
摘要： A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl4.
摘要翻译：提供氧化铪前体和使用前体形成氧化铪层的方法。氧化铪前体含有与HfCl 4结合的氮化合物。

117. 发明授权

US07043383B2 Frequency error detection apparatus and method based on histogram information on input signals 有权
标题翻译：基于输入信号直方图信息的频率误差检测装置和方法
公开(公告)号：US07043383B2
公开(公告)日：2006-05-09
申请号：US10799890
申请日：2004-03-15
申请人： Jae-wook Lee , Jung-hyun Lee
发明人： Jae-wook Lee , Jung-hyun Lee
IPC分类号： G01R23/00
CPC分类号： H03L7/091 , H03M13/00
摘要： A frequency error detection apparatus and method based on histogram information of an input signal. The apparatus includes an A/D converter for and converting an analog signal into digital values; a zero crossing point detector for detecting sign changes of the digital values, and detecting zero crossing points; a period information detector for detecting period information which is the number of the digital values corresponding to a periodic signal; a histogram information calculator for counting the number of detections for the respective period information based on the period information, and calculating error-detection-target histogram information; and a frequency error calculator for detecting a difference between the error-detection-target histogram information and a reference histogram information, and calculating a frequency error value based on the difference. This can shorten time for frequency error detections and improve accuracy of the detected frequency error value.
摘要翻译：一种基于输入信号的直方图信息的频率误差检测装置和方法。该装置包括用于将模拟信号转换成数字值的A / D转换器; 用于检测数字值的符号变化的零交叉点检测器，以及检测过零点; 周期信息检测器，用于检测作为周期信号对应的数字值的周期信息; 直方图信息计算器，用于根据周期信息对各周期信息的检测次数进行计数，并计算误差检测目标直方图信息; 以及频率误差计算器，用于检测误差检测目标直方图信息和参考直方图信息之间的差异，并且基于该差计算频率误差值。这可以缩短频率误差检测的时间并提高检测到的频率误差值的精度。

118. 发明授权

US07030450B2 Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursor 失效
标题翻译：氧化铪前体和使用前体形成氧化铪膜的方法
公开(公告)号：US07030450B2
公开(公告)日：2006-04-18
申请号：US10638329
申请日：2003-08-12
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L29/76
CPC分类号： H01L21/02181 , C01G27/02 , C01G27/04 , C01P2006/80 , C07F7/003 , H01L21/02205 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/517
摘要： A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl4.
摘要翻译：提供氧化铪前体和使用前体形成氧化铪层的方法。氧化铪前体含有与HfCl 4结合的氮化合物。

119. 发明申请

US20060040445A1 Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same 有权
标题翻译：具有减小漏电流的电介质层的电容器及其制造方法
公开(公告)号：US20060040445A1
公开(公告)日：2006-02-23
申请号：US11207740
申请日：2005-08-22
申请人： Jung-hyun Lee , Sung-ho Park , Bum-seok Seo
发明人： Jung-hyun Lee , Sung-ho Park , Bum-seok Seo
IPC分类号： H01L21/8242
CPC分类号： H01L28/65 , H01L28/40
摘要： A capacitor having a dielectric layer including a composite oxide, the composite oxide including a transition metal and including a lanthanide group element, a memory device including the same and a method of manufacturing the capacitor are provided. The transition metal may be titanium and the composite oxide may be nitrided. The method may include providing a precursor of a transition metal, providing a precursor of a lanthanide group element, and forming a composite oxide on the lower electrode by oxidizing both the precursor of the transition metal and the precursor of the lanthanide group element, the composite oxide containing the transition metal and the lanthanide group element.
摘要翻译：提供具有包括复合氧化物的电介质层的电容器，包含过渡金属并且包括镧系元素元素的复合氧化物，包括其的存储装置和制造电容器的方法。过渡金属可以是钛，并且复合氧化物可以被氮化。该方法可以包括提供过渡金属的前体，提供镧系元素元素的前体，以及通过氧化过渡金属的前体和镧系元素前体的复合氧化物，形成复合氧化物，复合材料含有过渡金属和镧系元素的氧化物。

120. 发明申请

US20050128918A1 Method for determining characteristics of signal and apparatus using the same 有权
标题翻译：用于确定信号和使用其的装置的特性的方法
公开(公告)号：US20050128918A1
公开(公告)日：2005-06-16
申请号：US10979815
申请日：2004-11-03
申请人： Hyun-soo Park , Jae-wook Lee , Jae-seong Shim , Jung-hyun Lee , Eing-seob Cho , Eun-jin Rhu
发明人： Hyun-soo Park , Jae-wook Lee , Jae-seong Shim , Jung-hyun Lee , Eing-seob Cho , Eun-jin Rhu
IPC分类号： G11B3/00 , G11B20/10
CPC分类号： G11B20/10009 , G11B2020/10555
摘要： A method of determining characteristics of a signal and an apparatus using the method. The apparatus for determining characteristics of a signal includes: a level detector receiving sample values of a radio frequency (RF) signal and binary data obtained by binarizing the RF signal, generating selection signals based on the binary data, classifying each of the sample values of the RF signal into one of a plurality of levels using the selection signals, and outputting average values of sample values of each level; and a signal characteristics determiner determining a characteristics value that indicates the characteristics of the RF signal using the average values of the sample values belonging to each level.
摘要翻译：一种确定信号特性的方法和使用该方法的装置。用于确定信号特性的装置包括：电平检测器，其接收射频（RF）信号的采样值和通过二值化RF信号获得的二进制数据，基于二进制数据产生选择信号，将每个样本值使用所述选择信号将所述RF信号变换成多个电平之一，并输出各电平的采样值的平均值; 以及信号特性确定器，其使用属于每个级别的样本值的平均值来确定指示RF信号的特性的特性值。

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