专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明申请

US20080203753A1 SEATING APPARATUS FOR ARRANGEMENT IN A DRIVER'S CABIN 有权
标题翻译：在驾驶室内安装的装置
公开(公告)号：US20080203753A1
公开(公告)日：2008-08-28
申请号：US12037645
申请日：2008-02-26
申请人： Thomas Klein , Thomas Haubrich
发明人： Thomas Klein , Thomas Haubrich
IPC分类号： B60N2/07
CPC分类号： B62D33/0625 , B60N2/005 , B60N2/062 , E01C19/26 , E01C2301/30
摘要： A seating apparatus is described for arrangement in a driver's cabin of a construction vehicle, especially a soil compacting machine, comprising a treading surface and an operating desk. The seating apparatus comprises a driver's seat and an adjusting device, and the adjusting device comprises two guide rails and a seat carrier. The seat carrier is held on the guide rails and is adjustable transversally to the traveling direction of the construction vehicle. The guide rails are arranged next to the treading surface used by the driver in such a way that the seat carrier can be displaced relative to the treading surface in a freely floating manner over the same.
摘要翻译：描述了一种安装在建筑车辆的驾驶室中的座椅装置，特别是包括踩踏面和操作台的土压实机。座椅装置包括驾驶员座椅和调节装置，调节装置包括两个导轨和座椅支架。座椅支架被保持在导轨上，并且可以横向调整到施工车辆的行进方向。导轨被布置在驾驶员使用的行走面旁边，使座椅支架相对于踏面可以以自由浮动的方式在其上移动。

112. 发明授权

US07193641B2 Stitching prevention in multibeam imaging for exposing printing plates 有权
标题翻译：用于曝光印版的多光束成像中的缝合防止
公开(公告)号：US07193641B2
公开(公告)日：2007-03-20
申请号：US11022576
申请日：2004-12-22
申请人： Thomas Klein , Wolfgang Sievers
发明人： Thomas Klein , Wolfgang Sievers
IPC分类号： B41J2/447
CPC分类号： G03F7/24 , B41C1/05 , G03F7/2055 , G06K2215/111
摘要： A method of exposing imaging data onto a sensitized medium including exposing K sets of N of tracks on to the medium according to a corresponding part of imaging data, each successive set being a pixel distance apart in a fast scan direction. The method further includes exposing L sets of N tracks onto the medium with an offset of M pixels in a slow scan direction substantially perpendicular to the fast scan direction, according to a second corresponding part of imaging data. The method includes repeating alternately exposing K sets and L sets of N tracks until the complete medium is exposed along the fast scan direction. During or after the alternately exposing K sets and L sets, there is progression in the slow scan direction such that after exposing the complete length of N tracks of exposed pixels, the next N tracks match along the medium at the start of the next N tracks.
摘要翻译：一种将成像数据曝光到敏化介质上的方法，包括根据成像数据的相应部分将K组N个磁道曝光到介质上，每个连续的组是在快速扫描方向上分开的像素距离。该方法还包括根据成像数据的第二对应部分，将基于垂直于快速扫描方向的慢扫描方向的M个像素的偏移量的L组N个轨迹曝光到介质上。该方法包括重复交替地暴露K组和L组N个磁道，直到完整的介质沿着快速扫描方向曝光。在交替曝光K组和L组之间或之后，在慢扫描方向上有进展，使得在暴露出曝光的像素的N个磁迹的完整长度之后，下一个N个磁道在下一个N个磁迹的开始处沿着介质匹配。

113. 发明申请

US20060154954A1 Combinations and use of selected pharmaceutically active compounds 审中-公开
标题翻译：选择的药物活性化合物的组合和用途
公开(公告)号：US20060154954A1
公开(公告)日：2006-07-13
申请号：US10545031
申请日：2004-02-16
申请人： Wilm Buhr , Wolfgang Kromer , Peter Zimmermann , Andreas Palmer , Christof Brehm , Thomas Klein , Joerg Senn-Bilfinger , Wolfgang-Alexander Simon , Stefan Postius
发明人： Wilm Buhr , Wolfgang Kromer , Peter Zimmermann , Andreas Palmer , Christof Brehm , Thomas Klein , Joerg Senn-Bilfinger , Wolfgang-Alexander Simon , Stefan Postius
IPC分类号： A61K31/4745
CPC分类号： A61K45/06 , A61K31/4375 , A61K2300/00
摘要： The present invention relates to new combinations and new uses of certain selected tricyclic imidazo [1,2-a]pyridine compounds in the prevention or treatment of medicament caused gastrointestinal diseases.
摘要翻译：本发明涉及某些选择的三环咪唑并[1,2-a]吡啶化合物在预防或治疗药物引起的胃肠道疾病中的新组合和新用途。

114. 发明授权

US06534271B2 Cloning and copying on surfaces 有权
标题翻译：克隆和复制表面
公开(公告)号：US06534271B2
公开(公告)日：2003-03-18
申请号：US09866513
申请日：2001-05-25
申请人： Jens Peter Fürste , Sven Klussmann , Thomas Klein , Günter Von Kiedrowski
发明人： Jens Peter Fürste , Sven Klussmann , Thomas Klein , Günter Von Kiedrowski
IPC分类号： C12Q168
CPC分类号： C12N15/10 , C12Q1/686 , Y10S977/902 , C12Q2565/543 , C12Q2565/515 , C12Q2565/125
摘要： The present invention provides for amplification methods for cloning and copying genetic material on surfaces as well as copying biological material insofar as, in a broader sense, it can be classified as a ligand-receptor system. The invention therefore relates in particular to a method for propagating ligands and receptors on at least two surfaces, comprising (a) immobilizing a first ligand on a first surface of a substantially solid phase; (b) adding a solution of receptors and binding complementary receptors to the first ligand; (c) transferring the receptor to a second surface and immobilizing the receptor at that location; (d) attaching an additional ligand to the immobilized receptor; and (e) transferring the additional ligand to the first surface and immobilizing it at that location, wherein the steps set forth above may be repeated,multiple times.
摘要翻译：本发明提供了用于在表面上克隆和复制遗传物质以及复制生物材料的扩增方法，只要在更广泛的意义上它可以分类为配体 - 受体系统。因此，本发明具体涉及用于在至少两个表面上传播配体和受体的方法，其包括（a）将第一配体固定在基本固相的第一表面上; （b）加入受体的溶液并将互补受体结合到第一配体上; （c）将受体转移到第二表面并将受体固定在该位置处; （d）将另外的配体连接到固定的受体上; 和（e）将另外的配体转移到第一表面并将其固定在该位置，其中上述步骤可以重复多次。

115. 发明授权

US4205330A Method of manufacturing a low voltage n-channel MOSFET device 失效
标题翻译：制造低电压n沟道MOSFET器件的方法
公开(公告)号：US4205330A
公开(公告)日：1980-05-27
申请号：US896658
申请日：1978-04-17
申请人： Thomas Klein
发明人： Thomas Klein
IPC分类号： H01L21/8236 , H01L29/78 , H01L27/02
CPC分类号： H01L21/8236 , Y10S148/053 , Y10S148/141
摘要： A novel MOSFET circuit and method of manufacture utilizing a double ion implant process for manufacturing a low voltage high performance n-channel device that includes an enhancement transistor inverter combined with a depletion transistor load. The process starts with high resistivity material and uses a first ion implant process to dope the field region and to give the required threshold voltage for an enhancement device. A second ion implant is used to dope the channel region for the depletion device.
摘要翻译：一种新颖的MOSFET电路和利用双离子注入工艺制造低电压高性能n沟道器件的制造方法，该器件包括与耗尽晶体管负载相结合的增强晶体管反相器。该过程从高电阻率材料开始，并且使用第一离子注入工艺来掺杂场区域并为增强器件提供所需的阈值电压。使用第二离子注入来掺杂耗尽装置的通道区域。

116. 发明授权

US4151631A Method of manufacturing Si gate MOS integrated circuit 失效
标题翻译： Si栅极MOS集成电路的制造方法
公开(公告)号：US4151631A
公开(公告)日：1979-05-01
申请号：US798215
申请日：1977-05-18
申请人： Thomas Klein
发明人： Thomas Klein
IPC分类号： H01L21/033 , H01L21/336 , B01J17/00
CPC分类号： H01L29/66575 , H01L21/033 , H01L29/41783 , Y10S148/113 , Y10S148/114 , Y10S148/141 , Y10S438/981
摘要： An IC manufacturing method that eliminates the need for separate pad area and allows polysilicon MOS transistor gates to be contacted directly. Present silicon gate process techniques are utilized up to and including the formation of the gate oxide layer, with areas etched through to the substrate. Then polysilicon and silicon nitride are deposited preferably in the same deposition equipment. The polysilicon interconnect and gate pattern is selectively etched for both silicon nitride and polysilicon. Next, the gate oxide exposed by the previous step is removed and phosphorous is diffused into the exposed silicon substrate surfaces. The initial nitride thickness is chosen such that after phosphorous predeposition and subsequent removal of phosphorous glass, a thin layer of silicon nitride is left. A silicon oxide protective layer is then grown over the exposed silicon substrate surfaces. The remaining silicon nitride is removed and a phosphosilicate glass is deposited over the entire surface. Contact cuts are made through the phosphosilicate glass through which metal contacts are established.
摘要翻译：一种IC制造方法，其不需要单独的焊盘区域并允许多晶硅MOS晶体管栅极直接接触。现有的硅栅极工艺技术被利用直到并包括形成栅极氧化物层，区域被蚀刻到衬底上。然后多晶硅和氮化硅优选沉积在相同的沉积设备中。对于氮化硅和多晶硅都选择性地蚀刻多晶硅互连和栅极图案。接下来，去除通过前一步骤曝光的栅极氧化物，并且磷扩散到暴露的硅衬底表面中。选择初始氮化物厚度，使得在磷预沉积和随后除去磷的玻璃之后，留下薄层的氮化硅。然后在暴露的硅衬底表面上生长氧化硅保护层。去除剩余的氮化硅，并在整个表面上沉积磷硅玻璃。通过形成金属接触的磷硅玻璃制成接触切割。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式