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111. 发明申请

US20100259164A1 MANUFACTURING METHOD OF DISPLAY DEVICE AND DISPLAY DEVICE 有权
标题翻译：显示设备和显示设备的制造方法
公开(公告)号：US20100259164A1
公开(公告)日：2010-10-14
申请号：US12731857
申请日：2010-03-25
申请人： Toyoharu Oohata , Katsuhiro Tomoda , Naoki Hirao , Masato Doi
发明人： Toyoharu Oohata , Katsuhiro Tomoda , Naoki Hirao , Masato Doi
IPC分类号： H01J1/62 , H01J9/20
CPC分类号： H01L25/0753 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/97 , H01L33/0079 , H01L33/62 , H01L2221/68354 , H01L2224/2919 , H01L2224/32225 , H01L2224/83005 , H01L2224/83192 , H01L2224/83855 , H01L2224/97 , H01L2924/12041 , H01L2224/83 , H01L2924/00
摘要： A manufacturing method of a display device, includes: a first step of collectively transferring light-emitting elements arranged at every specified number of light-emitting elements formed and arranged on a first substrate to a transfer area set on a second substrate; and a second step of transferring light-emitting elements remaining on the first substrate to between the plural light-emitting elements mounted on the second substrate in at least one of a state where the first substrate is moved with respect to the transfer area on the second substrate and a state where the first substrate is rotated in a plane.
摘要翻译：一种显示装置的制造方法，其特征在于，包括：将形成在第一基板上的每隔规定数量的发光元件配置的发光元件集中转移到设置在第二基板上的转印区域的第一工序; 以及第二步骤，将剩余在第一基板上的发光元件转移到安装在第二基板上的多个发光元件之间的至少一个状态，其中第一基板相对于第二基板上的转印区域移动衬底和第一衬底在平面中旋转的状态。

112. 发明授权

US07795049B2 Light-emitting device, light-emitting apparatus, image display apparatus, method of manufacturing light-emitting device, and method of manufacturing image display apparatus 有权
标题翻译：发光装置，发光装置，图像显示装置，发光装置的制造方法以及图像显示装置的制造方法
公开(公告)号：US07795049B2
公开(公告)日：2010-09-14
申请号：US11874808
申请日：2007-10-18
申请人： Toshihiko Watanabe , Masato Doi , Nobuaki Sato
发明人： Toshihiko Watanabe , Masato Doi , Nobuaki Sato
IPC分类号： H01L21/00
CPC分类号： H01L33/62 , H01L2221/68359 , H01L2924/0002 , H01L2924/00
摘要： Light-emitting devices, light-emitting apparatuses, image display apparatuses and methods of manufacturing same are provided. The devices and apparatuses include a transparent electrode that is connected directly to light output surfaces so as to cover the whole areas of the light output surfaces. The transparent electrode is formed to be larger in area than the light output surfaces, and are securely electrically connected to n-type semiconductor layers including the light output surfaces.
摘要翻译：提供了发光装置，发光装置，图像显示装置及其制造方法。装置和装置包括直接连接到光输出表面以覆盖光输出表面的整个区域的透明电极。透明电极形成为比光输出面大的面积，并且牢固地电连接到包括光输出表面的n型半导体层。

113. 发明授权

US07744770B2 Device transfer method 有权
标题翻译：设备传输方式
公开(公告)号：US07744770B2
公开(公告)日：2010-06-29
申请号：US11158980
申请日：2005-06-22
申请人： Masato Doi , Toyoharu Oohata
发明人： Masato Doi , Toyoharu Oohata
IPC分类号： B44C1/22 , G01L21/30
CPC分类号： H01L21/6835 , B23K26/066 , H01L33/20 , H01L33/24 , H01L2221/68359 , H01L2221/68363 , H01L2924/30105
摘要： A device transfer method is provided. The device transfer method is disclosed by which, when a laser ablation technique is used to selectively exfoliate devices arranged on a substrate, the energy is transmitted efficiently to transfer the devices with a high degree of accuracy and at a high speed. A laser irradiation apparatus is used which includes a laser light source for generating a laser beam, a reflection section for reflecting the laser beam toward a required direction, and a control section for controlling whether or not the laser beam is to be irradiated in an interlocking relationship with the reflection section. The laser beam is selectively irradiated on a plurality of devices arranged on a transfer source substrate to cause laser ablation such that the selected devices are transferred to a transfer destination substrate by the selective laser ablation.
摘要翻译：提供了一种设备传送方法。公开了一种器件转移方法，其中当使用激光烧蚀技术来选择性地剥离布置在衬底上的器件时，能量被有效地传输，以高精度和高速度传输器件。使用激光照射装置，其包括用于产生激光束的激光源，用于将激光束朝向所需方向反射的反射部分，以及用于控制激光束是否要以互锁方式照射的控制部分与反射部分的关系。激光束被选择性地照射在布置在转移源基板上的多个器件上以引起激光烧蚀，使得所选择的器件通过选择性激光烧蚀转移到转移目的基片。

114. 发明授权

US07573194B2 Display apparatus and method of manufacturing display apparatus 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07573194B2
公开(公告)日：2009-08-11
申请号：US11381456
申请日：2006-05-03
申请人： Masato Doi , Toyoharu Oohata , Katsuhiro Tomoda , Toshihiko Watanabe
发明人： Masato Doi , Toyoharu Oohata , Katsuhiro Tomoda , Toshihiko Watanabe
IPC分类号： H01J63/04
CPC分类号： G02F1/133603 , H01L2251/568
摘要： A display apparatus is provided. In the display apparatus, a plurality of light emitting devices are mounted in an orderly arranged state, mending light emitting devices capable of light emission are disposed directly above the failed ones of the plurality of light emitting devices, whereby the portions of the failed ones of the plurality of light emitting devices can be mended (repaired), and it is possible to eliminate dark spot defects in use of the display apparatus.
摘要翻译：提供一种显示装置。在显示装置中，多个发光装置以有序布置的状态安装，修补能够发光的发光装置直接设置在多个发光装置中的故障发光装置的正上方，由此，可以修复（修理）多个发光装置，并且可以消除显示装置的使用中的暗斑缺陷。

115. 发明授权

US07564064B2 Semiconductor light emitting device, an integrated semiconductor light emitting apparatus, an image display apparatus, and an illuminating apparatus having a semiconductor layer with conical crystal portion 有权
标题翻译：半导体发光器件，集成半导体发光器件，图像显示设备和具有带有锥形晶体部分的半导体层的照明设备
公开(公告)号：US07564064B2
公开(公告)日：2009-07-21
申请号：US11682770
申请日：2007-03-06
申请人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
发明人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
IPC分类号： H01L27/15
CPC分类号： H01L33/20 , H01L33/007 , H01L33/24
摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.
摘要翻译：在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。形成上表面为C面的六边形棱镜部。在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

116. 发明授权

US07553370B2 Crystal growth method for nitride semiconductor and formation method for semiconductor device 有权
公开(公告)号：US07553370B2
公开(公告)日：2009-06-30
申请号：US11311017
申请日：2005-12-19
申请人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： C30B25/16
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02554 , H01L21/02557 , H01L21/02565 , H01L21/02568 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265
摘要： Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

117. 发明授权

US07317211B2 Light-emitting device, light-emitting apparatus, image display apparatus, method of manufacturing light-emitting device, and method of manufacturing image display apparatus 有权
标题翻译：发光装置，发光装置，图像显示装置，发光装置的制造方法以及图像显示装置的制造方法
公开(公告)号：US07317211B2
公开(公告)日：2008-01-08
申请号：US10799309
申请日：2004-03-12
申请人： Toshihiko Watanabe , Masato Doi , Nobuaki Sato
发明人： Toshihiko Watanabe , Masato Doi , Nobuaki Sato
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L2221/68359 , H01L2924/0002 , H01L2924/00
摘要： Light-emitting devices, light-emitting apparatuses, image display apparatuses and methods of manufacturing same are provided. The devices and apparatuses include a transparent electrode that is connected directly to light output surfaces so as to cover the whole areas of the light output surfaces. The transparent electrode is formed to be larger in area than the light output surfaces, and are securely electrically connected to n-type semiconductor layers including the light output surfaces.
摘要翻译：提供了发光装置，发光装置，图像显示装置及其制造方法。装置和装置包括直接连接到光输出表面以覆盖光输出表面的整个区域的透明电极。透明电极形成为比光输出面大的面积，并且牢固地电连接到包括光输出表面的n型半导体层。

118. 发明授权

US07250314B2 Display system and method of producing the same 有权
标题翻译：显示系统及其制作方法
公开(公告)号：US07250314B2
公开(公告)日：2007-07-31
申请号：US11093444
申请日：2005-03-30
申请人： Hideharu Nakajima , Masato Doi
发明人： Hideharu Nakajima , Masato Doi
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L27/156 , H01L33/16 , H01L33/20
摘要： Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.
摘要翻译：公开了一种显示系统及其制造方法。在本发明中，通过将其嵌入由环氧树脂形成的绝缘层中，将选择性晶体生长的六角锥形GaN半导体发光器件固定在基板的上表面上。然后在氧等离子体气氛中选择性干蚀刻绝缘层，以暴露GaN半导体发光器件的上端部分。导体膜形成在整个表面上，导电膜的所需部分作为引出电极留下，而非需要部分通过光刻除去。

119. 发明申请

US20070077674A1 PROCESS FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：制造半导体发光装置的方法
公开(公告)号：US20070077674A1
公开(公告)日：2007-04-05
申请号：US11558115
申请日：2006-11-09
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： A process for producing a semiconductor light-emitting device is provided. The process includes providing a substrate including a substrate surface oriented along a substrate surface plane, forming a crystal seed layer on the substrate surface, forming a masking layer on the crystal seed layer, wherein the masking layer includes an opening, forming a crystal layer by selective growth of the crystal seed layer through the opening of the masking layer, wherein the crystal layer includes a crystal layer surface oriented along a crystal layer plane that diagonally intersects the substrate surface, and forming each of a first conductive layer, an active layer, and a second conductive layer along at least a portion of the crystal layer surface.
摘要翻译：提供一种制造半导体发光器件的方法。该方法包括提供基板，其包括沿着基板表面平面取向的基板表面，在基板表面上形成晶种层，在晶种层上形成掩模层，其中掩模层包括开口，通过通过所述掩模层的开口选择性地生长所述晶种层，其中所述晶体层包括沿着与所述衬底表面对角地相交的晶体层平面取向的晶体层表面，并且形成第一导电层，有源层，以及沿着所述晶体层表面的至少一部分的第二导电层。

120. 发明申请

US20060170001A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20060170001A1
公开(公告)日：2006-08-03
申请号：US11331290
申请日：2006-01-12
申请人： Jun Suzuki , Masato Doi , Goshi Biwa , Hiroyuki Okuyama
发明人： Jun Suzuki , Masato Doi , Goshi Biwa , Hiroyuki Okuyama
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L33/40
摘要： A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.
摘要翻译：提供了一种半导体发光器件。在包括Ag电极的InGaN系半导体发光器件中，至少Ag电极的接触侧的半导体层是位错密度选择为小于1×10 7（1 / cm 2），从而可以避免沿着该位错产生的Ag迁移引起的短路。因此，该半导体发光器件能够解决寿命缩短的问题，并且能够解决InGaN系半导体发光元件遇到的缺陷器件的分数的问题。

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