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111. 发明授权

US09202881B2 Semiconductor component with dynamic behavior 有权
标题翻译：具有动态行为的半导体元件
公开(公告)号：US09202881B2
公开(公告)日：2015-12-01
申请号：US12186034
申请日：2008-08-05
申请人： Markus Zundel , Franz Hirler
发明人： Markus Zundel , Franz Hirler
IPC分类号： H01L29/40 , H01L29/08 , H01L29/423 , H01L29/739 , H01L29/78 , H01L29/861
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/1045 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/66734 , H01L29/7397 , H01L29/7809 , H01L29/7813 , H01L29/7827 , H01L29/861
摘要： One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches.
摘要翻译：一个实施例提供了包括具有第一侧和第二侧以及漂移区的半导体本体的半导体部件; 与所述漂移区域互补地并且在所述第一侧的方向上与所述漂移区域相邻地掺杂的第一半导体区域; 与所述漂移区相邻的所述漂移区与所述第二侧方向相同的导电类型的第二半导体区; 至少两个沟槽布置在半导体本体中并延伸到半导体本体中并且彼此间隔一定距离; 以及设置在与漂移区相邻的至少两个沟槽中的场电极。所述至少两个沟槽在垂直方向上与所述第二半导体区域一定距离地布置，所述沟槽和所述第二半导体区域之间的距离大于所述沟槽之间的相互距离的1.5倍，并且所述漂移区域的掺杂浓度在沟槽和第二半导体区域之间的区段中，在沟槽之间的截面中与最小掺杂浓度相差至多35％。

112. 发明授权

US08796761B2 Semiconductor device including charged structure and methods for manufacturing a semiconductor device 有权
标题翻译：包括带电结构的半导体器件和用于制造半导体器件的方法
公开(公告)号：US08796761B2
公开(公告)日：2014-08-05
申请号：US13420772
申请日：2012-03-15
申请人： Franz Hirler , Markus Zundel
发明人： Franz Hirler , Markus Zundel
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/401 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/512 , H01L29/66734
摘要： A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure extending along a lateral side of the trench region, wherein a part of the dielectric structure is a charged insulating structure. The semiconductor device further includes a gate electrode in the trench region and a body region of a conductivity type other than the conductivity type of the drift zone. The charged insulating structure adjoins each one of the drift zone, the body region and the dielectric structure and further adjoins or is arranged below a bottom side of a gate dielectric of the dielectric structure.
摘要翻译：半导体器件包括从表面延伸到半导体本体的漂移区的沟槽区域。半导体器件还包括沿着沟槽区域的横向侧延伸的电介质结构，其中介电结构的一部分是带电的绝缘结构。半导体器件还包括沟槽区域中的栅电极和除漂移区的导电类型以外的导电类型的体区。带电的绝缘结构邻接漂移区，体区和电介质结构中的每一个，并进一步邻接或布置在电介质结构的栅极电介质的底侧下方。

113. 发明申请

US20130320915A1 Gated Diode, Battery Charging Assembly and Generator Assembly 有权
标题翻译：门极二极管，电池充电组件和发电机组件
公开(公告)号：US20130320915A1
公开(公告)日：2013-12-05
申请号：US13484340
申请日：2012-05-31
申请人： Dirk Ahlers , Markus Zundel , Dietrich Bonart , Ludger Borucki
发明人： Dirk Ahlers , Markus Zundel , Dietrich Bonart , Ludger Borucki
IPC分类号： H01L29/78 , H02J7/00
CPC分类号： H01L29/7802 , H01L23/051 , H01L23/24 , H01L29/0634 , H01L29/0834 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/36 , H01L29/7391 , H01L29/861 , H01L2924/0002 , H02J7/14 , H02J7/242 , H01L2924/00
摘要： A gated diode may include source zones and a drain zone which are both of a first conductivity type. The source zones directly adjoin a first surface of a semiconductor die and the drain zone directly adjoins an opposite second surface of the semiconductor die. The drain zone includes a drift zone formed in an epitaxial layer of the semiconductor die. Base zones of a second conductivity type, which is the opposite of the first conductivity type, are provided between the drain zones and the source zones. The drift zone further includes adjustment zones directly adjoining a base zone and arranged between the respective base zone and the second surface, respectively. A net dopant concentration in the adjustment zone is at least twice a net dopant concentration in the second sub-zone. The adjustment zones precisely define the reverse breakdown voltage.
摘要翻译：门控二极管可以包括源极区和漏极区，它们都是第一导电类型。源极区域直接邻接半导体管芯的第一表面，并且漏极区域直接邻接半导体管芯的相对的第二表面。漏区包括形成在半导体管芯的外延层中的漂移区。第二导电类型的与第一导电类型相反的基区设置在排水区和源区之间。漂移区还包括直接邻接基部区域并且分别布置在相应的基部区域和第二表面之间的调节区域。调整区域中的净掺杂剂浓度至少为第二子区域中的净掺杂剂浓度的两倍。调整区域精确定义反向击穿电压。

114. 发明申请

US20130307127A1 Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device 有权
标题翻译：包括硅酸盐玻璃结构的半导体器件和制造半导体器件的方法
公开(公告)号：US20130307127A1
公开(公告)日：2013-11-21
申请号：US13473231
申请日：2012-05-16
申请人： Hans-Joachim Schulze , Alexander Susiti , Markus Zundel , Reinhard Ploss
发明人： Hans-Joachim Schulze , Alexander Susiti , Markus Zundel , Reinhard Ploss
IPC分类号： H01L29/06 , H01L21/311
CPC分类号： H01L29/7813 , H01L21/02123 , H01L21/02129 , H01L21/02321 , H01L21/26506 , H01L21/283 , H01L21/3115 , H01L21/31155 , H01L23/291 , H01L23/3171 , H01L29/06 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4916 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.
摘要翻译：半导体器件包括具有第一表面的半导体本体。半导体器件还包括在第一表面上的连续硅酸盐玻璃结构。在半导体主体的有源区域上的连续玻璃结构的第一部分包括掺杂剂的第一组合物，其不同于连续玻璃结构的第二部分中的掺杂剂的第二组成，在半导体主体的在活性物外部的区域上区。

115. 发明授权

US08482036B2 Lateral high electron mobility transistor 有权
标题翻译：侧向高电子迁移率晶体管
公开(公告)号：US08482036B2
公开(公告)日：2013-07-09
申请号：US13090350
申请日：2011-04-20
申请人： Markus Zundel , Franz Hirler
发明人： Markus Zundel , Franz Hirler
IPC分类号： H01L29/778
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/42316 , H01L29/7787 , H01L29/872
摘要： A lateral HEMT includes a substrate, a first semiconductor layer above the substrate and a second semiconductor layer on the first semiconductor layer. The lateral HEMT further includes a gate electrode, a source electrode, a drain electrode and a rectifying Schottky junction. A first terminal of the rectifying Schottky junction is electrically coupled to the source electrode and a second terminal of the rectifying Schottky junction is electrically coupled to the second semiconductor layer.
摘要翻译：横向HEMT包括衬底，在衬底上方的第一半导体层和第一半导体层上的第二半导体层。横向HEMT还包括栅电极，源电极，漏电极和整流肖特基结。整流肖特基结的第一端电耦合到源电极，并且整流肖特基结的第二端电耦合到第二半导体层。

116. 发明申请

US20130099308A1 Semiconductor Device Having a Through Contact and a Manufacturing Method Therefor 有权
标题翻译：具有直接接触的半导体器件及其制造方法
公开(公告)号：US20130099308A1
公开(公告)日：2013-04-25
申请号：US13279846
申请日：2011-10-24
申请人： Hermann Gruber , Thomas Gross , Andreas Peter Meiser , Markus Zundel
发明人： Hermann Gruber , Thomas Gross , Andreas Peter Meiser , Markus Zundel
IPC分类号： H01L29/78 , H01L21/50 , H01L21/78
CPC分类号： H01L23/481 , H01L21/6835 , H01L21/76224 , H01L21/76898 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/00
摘要： According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material.
摘要翻译：根据实施例，一种形成半导体器件的方法包括：提供具有半导体衬底的晶片，第一侧具有与第一侧相对的第二侧和布置在第一侧的电介质区域; 将具有第一侧的晶片安装在载体系统上; 蚀刻从第二侧通过半导体衬底到电介质区域的深垂直沟槽，从而将台面区域与剩余的半导体衬底绝缘; 并用介电材料填充深垂直沟槽。

117. 发明申请

US20130075814A1 SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR VIA 审中-公开
标题翻译：具有半导体的半导体器件
公开(公告)号：US20130075814A1
公开(公告)日：2013-03-28
申请号：US13241771
申请日：2011-09-23
申请人： Andreas Peter Meiser , Markus Zundel
发明人： Andreas Peter Meiser , Markus Zundel
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L29/4238 , H01L21/743 , H01L21/76898 , H01L23/481 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body having a first surface and a second surface, at least one electrode arranged in at least one trench extending from the first surface into the semiconductor body, and a semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor body to the second surface. The semiconductor via is electrically insulated from the semiconductor body by a via insulation layer. The at least one electrode extends in a first lateral direction of the semiconductor body through the via insulation layer and is electrically connected to the semiconductor via.
摘要翻译：半导体器件包括具有第一表面和第二表面的半导体本体，至少一个电极，设置在从第一表面延伸到半导体本体的至少一个沟槽中，以及半导体通孔，其在半导体本体的垂直方向上延伸半导体主体到第二表面。半导体通孔通过通孔绝缘层与半导体本体电绝缘。所述至少一个电极通过所述通孔绝缘层在所述半导体主体的第一横向方向上延伸并且电连接到所述半导体通孔。

118. 发明授权

US08120135B2 Transistor 有权
标题翻译：晶体管
公开(公告)号：US08120135B2
公开(公告)日：2012-02-21
申请号：US12704034
申请日：2010-02-11
申请人： Norbert Krischke , Nicola Vannucci , Sven Lanzerstorfer , Thomas Ostermann , Mathias Racki , Markus Zundel
发明人： Norbert Krischke , Nicola Vannucci , Sven Lanzerstorfer , Thomas Ostermann , Mathias Racki , Markus Zundel
IPC分类号： H01L29/76
CPC分类号： H01L29/7811 , H01L27/0207 , H01L29/0642 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/42368 , H01L29/7803 , H01L29/7813 , H01L29/7821
摘要： A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.
摘要翻译：晶体管具有具有两个或多个晶体管单元的单元阵列，集成在单元阵列中或与单元阵列相邻的温度传感器和隔离结构。隔离结构将温度传感器与电池阵列隔离，并且具有隔离沟槽，其布置在电池阵列和温度传感器之间。最靠近温度传感器的温度传感器和有源晶体管单元之间的距离大致对应于单元阵列内的有源晶体管单元之间的间距。

119. 发明申请

US20120032260A1 ELECTRONIC DEVICE WITH CONNECTING STRUCTURE 有权
标题翻译：具有连接结构的电子设备
公开(公告)号：US20120032260A1
公开(公告)日：2012-02-09
申请号：US13276854
申请日：2011-10-19
申请人： Franz Hirler , Markus Zundel
发明人： Franz Hirler , Markus Zundel
IPC分类号： H01L29/78 , H01L29/41
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41741 , H01L29/4238 , H01L29/7811 , H01L29/945
摘要： A semiconductor device including a connecting structure includes an edge region, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region.
摘要翻译：包括连接结构的半导体器件包括边缘区域，朝向边缘区域延伸的第一沟槽和第二沟槽，第一沟槽内的第一电极和第二沟槽内的第二电极，第一和第二电极被布置在相对于沟槽内的电子器件的基板的主表面的相同的电极平面，并且在第一沟槽的边缘区域侧端延伸的第一电极比第二电极延伸到边缘区域延伸，在第二沟槽的边缘区域侧端部朝向边缘区域。

120. 发明授权

US07800171B2 Integrated circuit including a semiconductor device 有权
标题翻译：包括半导体器件的集成电路
公开(公告)号：US07800171B2
公开(公告)日：2010-09-21
申请号：US11870750
申请日：2007-10-11
申请人： Mathias Von Borcke , Markus Zundel , Thorsten Meyer , Uwe Schmalzbauer
发明人： Mathias Von Borcke , Markus Zundel , Thorsten Meyer , Uwe Schmalzbauer
IPC分类号： H01L21/336
CPC分类号： H01L29/7815 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/42368 , H01L29/7811 , H01L29/7813 , H03K17/18 , H03K17/687
摘要： An integrated circuit including a semiconductor device is disclosed. One embodiment provides a load current component, having a multiplicity of trenches in a cell array. A sensor component is integrated into the cell array of the load current component and has a sensor cell array, the area of which is smaller than the area of the cell array of the load current component by a specific factor. The trenches forming the cell array of the sensor component correspond to the trenches of the cell array of the load current component, configured such that the trenches of the sensor component at the at least one side merge uniformly into the trenches of the cell array of the load current component without interruptions or disturbances of the trench geometry.
摘要翻译：公开了一种包括半导体器件的集成电路。一个实施例提供负载电流分量，其具有单元阵列中的多个沟槽。传感器组件被集成到负载电流分量的单元阵列中，并且具有传感器单元阵列，其区域小于负载电流分量的单元阵列的面积的特定因子。形成传感器组件的单元阵列的沟槽对应于负载电流分量的单元阵列的沟槽，其被配置为使得至少一侧的传感器组件的沟槽均匀地合并到单元阵列的沟槽中负载电流分量，不影响沟槽几何形状的干扰或干扰。

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