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    • 114. 发明授权
    • Semiconductor memory and system
    • 半导体存储器和系统
    • US08587987B2
    • 2013-11-19
    • US13240492
    • 2011-09-22
    • Masaki Aoki
    • Masaki Aoki
    • G11C11/00G11C11/14G11C11/15
    • G11C13/003G11C11/16G11C11/1659G11C11/1673G11C11/1675G11C13/0004G11C13/0007G11C13/004G11C29/021G11C29/028G11C2213/79
    • A semiconductor memory includes a real memory cell including a selection transistor and a resistance variable element which are connected in series between a first voltage line and a second voltage line through a connection node, a real amplification transistor having a gate connected to the connection node, a source connected to a reference voltage line, and a drain connected to a real read line, and a sense amplifier to determine a logic held in the real memory cell by receiving a voltage of the real read line varied with a voltage generated in the connection node by resistance dividing between a source/drain resistance of the selection transistor, and the resistance variable element, the selection transistor receiving a read control voltage at the gate thereof.
    • 半导体存储器包括:实际存储单元,包括通过连接节点串联连接在第一电压线和第二电压线之间的选择晶体管和电阻可变元件,具有连接到连接节点的栅极的实际放大晶体管, 连接到参考电压线的源极和连接到实际读取线的漏极,以及读出放大器,用于通过接收由连接中产生的电压而变化的真实读取线的电压来确定保持在实际存储单元中的逻辑 所述选择晶体管在所述栅极处接收读取控制电压,所述选择晶体管在所述栅极处接收读取控制电压。
    • 115. 发明授权
    • Semiconductor memory device and method of writing into semiconductor memory device
    • 半导体存储器件和写入半导体存储器件的方法
    • US07898839B2
    • 2011-03-01
    • US12398342
    • 2009-03-05
    • Masaki Aoki
    • Masaki Aoki
    • G11C11/00
    • G11C13/0007G11C13/0064G11C13/0069G11C2013/009G11C2213/31G11C2213/32G11C2213/79H01L27/115H01L27/24
    • In the semiconductor memory device having a resistance memory element, a first transistor having a drain terminal connected to one end of the resistance memory element and a source terminal connected to a ground voltage, and a second transistor having source terminal connected to the resistance memory element, when a write voltage is applied to the resistance memory element via the second transistor to switch the resistance memory element from a low resistance state to a high resistance state, a voltage is controlled to be a value which is not less than a reset voltage and less than a set voltage by applying to a gate terminal of the second transistor a voltage which is not less than a total of the reset voltage and a threshold voltage of the second transistor and is less than a total of the set voltage and the threshold voltage.
    • 在具有电阻存储元件的半导体存储器件中,具有连接到电阻存储元件的一端的漏极端子和与地电压相连的源极端子的第一晶体管,以及具有与电阻存储元件连接的源极端子的第二晶体管 当通过第二晶体管将电压存储元件施加写入电压以将电阻存储元件从低电阻状态切换到高电阻状态时,电压被控制为不小于复位电压的值, 通过向第二晶体管的栅极端子施加不小于复位电压和第二晶体管的阈值电压的总和并且小于设定电压和阈值电压的总和的电压小于设定电压 。
    • 116. 发明授权
    • Magnetic memory device, method for writing into magnetic memory device and method for reading magnetic memory device
    • 磁存储器件,用于写入磁存储器件的方法和用于读取磁存储器件的方法
    • US07583528B2
    • 2009-09-01
    • US11848571
    • 2007-08-31
    • Masaki Aoki
    • Masaki Aoki
    • G11C11/00
    • H01L27/228G11C11/15G11C2213/75
    • A magnetic memory device includes a first signal line (BL) and a second signal line (/BL) extended column-wise; a third signal line (WL) extended row-wise; a memory cell including a first parallelly connected set which is disposed at the intersection of the first signal line and the third signal line, including a first magnetoresistive effect element (MTJ1) and a first select transistor (Tr1) and having one end connected to the first signal line; a second parallelly connected set which is disposed at the intersection of the second signal line and the third signal line, including a second magnetoresistive effect element (MTJ2) and a second select transistor (Tr2) and having one end connected to the second signal line; and a read circuit connected to the first signal line and the second signal line, for reading information memorized in the memory cell, based on voltages of the first signal line and the second signal line.
    • 磁存储器件包括第一信号线(BL)和逐列延伸的第二信号线(/ BL); 逐行扩展的第三信号线(WL); 存储单元,包括设置在第一信号线和第三信号线的交点处的第一并联装置,包括第一磁阻效应元件(MTJ1)和第一选择晶体管(Tr1),并且一端连接到第一信号线 第一条信号线 第二并联连接组,其设置在第二信号线和第三信号线的交点处,包括第二磁阻效应元件(MTJ2)和第二选择晶体管(Tr2),并且一端连接到第二信号线; 以及连接到第一信号线和第二信号线的读取电路,用于基于第一信号线和第二信号线的电压来读取存储在存储单元中的信息。
    • 118. 发明授权
    • Plasma display panel with superior light-emitting characteristics, and method and apparatus for producing the plasma display panel
    • 具有优异发光特性的等离子体显示面板,以及用于制造等离子体显示面板的方法和装置
    • US07315120B2
    • 2008-01-01
    • US10943643
    • 2004-09-17
    • Hiroyuki KadoMitsuhiro OhtaniMasaki AokiKanako Miyashita
    • Hiroyuki KadoMitsuhiro OhtaniMasaki AokiKanako Miyashita
    • H01J17/49
    • H01J9/38H01J9/241H01J9/261H01J9/385H01J11/12H01J11/36H01J11/42H01J11/48H01J11/54H01J2211/48
    • A PDP with superior light-emitting characteristics and color reproduction is achieved by setting the chromaticity coordinate y (the CIE color specification) of light to 0.08 or less, more preferably to 0.07 or less, or 0.06 or less, enabling the color temperature of light to be set to 7,000K or more, and further to 8,000K or more, 9,000K or more, or 10,000K or more. The PDP is manufactured by a method in which the processes for heating the fluorescent substances such as the fluorescent substance baking, sealing material temporary baking, bonding, and exhausting processes are performed in the dry gas atmosphere, or in an atmosphere in which a dry gas is circulated at a pressure lower than the atmospheric pressure. This PDP is also manufactured by: a method in which after the front and back panels are bonded together, the exhausting process for exhausting gas from the inner space between panels is started while the panels are not cooled to room temperature; or a method in which after the front and back panels are temporarily baked, the process for bonding the panels is started while the panels are not cooled to room temperature. This reduces the time and energy required for heating, resulting in reduction of manufacturing cost.
    • 通过将光的色度坐标y(CIE颜色规格)设定为0.08以下,更优选为0.07以下或0.06以下,能够实现具有优异的发光特性和色彩再现的PDP,能够实现光的色温 设定为7000K以上,进一步为8,000K以上,9000K以上,10,000K以上。 PDP的制造方法是,在干燥气体气氛中,或在干燥气体的气氛中进行荧光物质烘烤,密封材料的暂时烘烤,粘合,排出等荧光物质的加热处理 在低于大气压的压力下循环。 该PDP也通过以下方法制造:其中在前面板和后面板结合在一起之后,在面板未冷却至室温的同时开始从面板之间的内部空间排出气体的排气过程; 或者在将前面板和后面板暂时烘烤之后,在面板未冷却至室温的同时开始接合面板的工序。 这减少了加热所需的时间和能量,从而降低制造成本。
    • 120. 发明授权
    • Plasma display panel with superior light-emitting characteristics, and method and apparatus for producing the plasma display panel
    • 具有优异发光特性的等离子体显示面板,以及用于制造等离子体显示面板的方法和装置
    • US06984159B1
    • 2006-01-10
    • US09719134
    • 1999-06-15
    • Hiroyuki KadoMitsuhiro OhtaniMasaki AokiKanako Miyashita
    • Hiroyuki KadoMitsuhiro OhtaniMasaki AokiKanako Miyashita
    • H01J9/44
    • H01J9/38H01J9/241H01J9/261H01J9/385H01J11/12H01J11/36H01J11/42H01J11/48H01J11/54H01J2211/48
    • A PDP with superior light-emitting characteristics and color reproduction is achieved by setting the chromaticity coordinate y (the CIE color specification) of light to 0.08 or less, more preferably to 0.07 or less, or 0.06 or less, enabling the color temperature of light to be set to 7,000 K or more, and further to 8,000 K or more, 9,000 K or more, or 10,000 K or more. The PDP is manufactured by a method in which the processes for heating the fluorescent substances such as the fluorescent substance baking, sealing material temporary baking, bonding, and exhausting processes are performed in the dry gas atmosphere, or in an atmosphere in which a dry gas is circulated at a pressure lower than the atmospheric pressure. This PDP is also manufactured by: a method in which after the front and back panels are bonded together, the exhausting process for exhausting gas from the inner space between panels is started while the panels are not cooled to room temperature; or a method in which after the front and back panels are temporarily baked, the process for bonding the panels is started while the panels are not cooled to room temperature. This reduces the time and energy required for heating, resulting in reduction of manufacturing cost.
    • 通过将光的色度坐标y(CIE颜色规格)设定为0.08以下,更优选为0.07以下或0.06以下,能够实现具有优异的发光特性和色彩再现的PDP,能够实现光的色温 设定为7000K以上,进一步为8000K以上,9000K以上,10,000K以上。 PDP的制造方法是,在干燥气体气氛中,或在干燥气体的气氛中进行荧光物质烘焙,密封材料的暂时烘烤,粘合,排出等荧光物质的加热处理 在低于大气压的压力下循环。 该PDP也通过以下方法制造:其中在前面板和后面板结合在一起之后,在面板未冷却至室温的同时开始从面板之间的内部空间排出气体的排气过程; 或者在将前面板和后面板暂时烘烤之后,在面板未冷却至室温的同时开始接合面板的工序。 这减少了加热所需的时间和能量,从而降低制造成本。