专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明专利

JP2000066046A LIGHT TRANSMISSION DEVICE 失效
公开(公告)号：JP2000066046A
公开(公告)日：2000-03-03
申请号：JP23524698
申请日：1998-08-21
申请人： HITACHI LTD
发明人： SATO HIROSHI , AOKI MASAHIRO , SUDO TSUTOMU , OYA AKIRA , TSUCHIYA TOMONOBU , KOMORI MASAAKI , UOMI KAZUHISA
IPC分类号： G02B6/122 , H01S5/00 , H01S5/022 , H01S5/10 , H01S5/12 , H04B10/2507 , H04B10/40 , H04B10/50 , H04B10/60 , H01S5/30 , H04B10/02 , H04B10/28
摘要： PROBLEM TO BE SOLVED: To provide a light transmission device with a large optical output, suitable for a high speed and a large capacity optical transmission system also excellent in an antireflection characteristic. SOLUTION: This light transmission device has a waveguide-type optical element emitting light, a light transmission path optically coupled to this waveguide-type optical device, and a waveguide-type optical element is composed of a light-emitting part having at least partly in it a gain coupling type diffraction grating 54, and a mode converting region integral therewith. In such a manner, it is possible to provide a light transmission system excellent in reflection returning light resistance while maintaining an optical coupling between the emitting part and the light transmission path with high efficiency. Moreover, the light transmission member realizes an optical transmission device suitable for a high speed and a large capacity optical transmission system with such a high efficiency optical coupling and excellent in a reflection resistant characteristic.

112. 发明专利

JP2000049417A SEMICONDUCTOR LIGHT EMITTING DEVICE SEMICONDUCTOR LIGHT EMITTING APPARATUS WITH SUCH DEVICE AND THEIR MANUFACTURE 失效
公开(公告)号：JP2000049417A
公开(公告)日：2000-02-18
申请号：JP21365298
申请日：1998-07-29
申请人： HITACHI LTD
发明人： NAKAMURA ATSUSHI , AOKI MASAHIRO
IPC分类号： G02B6/42 , H01S5/00 , H01S5/02 , H01S5/30
摘要： PROBLEM TO BE SOLVED: To make light emitting parts agree with or be closest to designed values by positioning the light emitting part agreeing or closest to designed values in the center or near the center of a semiconductor light emitting device when the construction of the light emitting parts is different from each other. SOLUTION: Four light emitting parts 11 are disposed in parallel to each other in a semiconductor light emitting device. The values of mesa stripe width (Wn) of the four light emitting parts 11 are set different from each other, for example, set to 1.9, 2.0, 2.1, and 2.2 μn. If the width of the mesa stripe comprising a light emitting part (optical waveguide) changes by 0.1 μm, the oscillation wavelength changes by about 0.8 μm. Accordingly, if design values (design wavelength) are set to approximately intermediate values in the wavelength range and semiconductor light emitting device are manufactured with such values, either wavelength of the four light emitting parts 11 agrees with the designed wavelength of is close to designed wavelength.

113. 发明专利

JP2000031598A WAVEGUIDE TYPE SEMICONDUCTOR OPTICAL ELEMENT AND OPTICAL MODULE AND OPTICAL COMMUNICATION SYSTEM 失效
公开(公告)号：JP2000031598A
公开(公告)日：2000-01-28
申请号：JP19835698
申请日：1998-07-14
申请人： HITACHI LTD
发明人： TAKAHASHI MAKOTO , OTOSHI SO , AOKI MASAHIRO , SATO HIROSHI , TSUJI SHINJI
IPC分类号： G02B6/42 , G02B6/122 , G02F1/025 , H01S5/00 , H01S5/30
摘要： PROBLEM TO BE SOLVED: To reduce effective refractive index at the light emitting end in order to attain further narrow beam radiating angle by forming a core which becomes thinner toward the beam emitting end, widening a stripe width and then narrowing a core width at the area near the light emitting end. SOLUTION: A waveguide type semiconductor optical element is composed of a laser part which assures constant film thickness and stripe width and a beam enlarging part in which the core layer 2 becomes thinner toward the light emitting end and the stripe width becomes wide. Moreover, at the beam enlarging part, width of the core layer 2 becomes narrow toward the light emitting end. In this case, when the stripe width is sufficiently wide, influence of polyimide 4 having lower refractive index can be eliminated. Therefore, beam can sufficiently be enlarged and the radiation angle can be narrowed more than that of the related art.

114. 发明专利

JPH11186666A SEMICONDUCTOR DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LASER DEVICE, OPTICAL MODULE AND OPTICAL SYSTEM 失效
公开(公告)号：JPH11186666A
公开(公告)日：1999-07-09
申请号：JP35783397
申请日：1997-12-25
申请人： HITACHI LTD
发明人： SHINODA KAZUNORI , OKUNO YAE , AOKI MASAHIRO
IPC分类号： H01L29/73 , H01L21/331 , H01L29/205 , H01L29/737 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To obtain a compound semiconductor device with a semiconductor region of further high resistivity, by making a semiinsulating semiconductor region in a compound semiconductor base contain chlorine atom and not contain transition metallic atom practically. SOLUTION: An SiO2 stripe 9 is formed after each crystalline layer is subjected to crystal growth on an n-type InP substrate 1. A step is formed by using the stripe 9 as a mask. Etching is performed deeper than a multiquantum well active layer 2. Thereafter, it is carried into an organometallic compound vapor phase growth furnace. An interior of the furnace is subjected to pressure reduction and a chlorine doped semiinsulating InP current constriction layer 10 is formed. Since atom which accelerates Zn diffusion such as Fe is not added in a buried layer, a diffusion length of Zn into a buried layer is small. After burying growth, the SiO2 stripe 9 is removed, an upper electrode 6 is formed and a back of the substrate is made thin. Then, a lower electrode 7 is formed. Lastly, a semiconductor laser is prepared by division and cleavage.

115. 发明专利

JPH11145558A SEMICONDUCTOR OPTICAL ELEMENT, TRANSMITTING-RECEIVING MODULE, AND OPTICAL COMMUNICATION SYSTEM 失效
公开(公告)号：JPH11145558A
公开(公告)日：1999-05-28
申请号：JP30285497
申请日：1997-11-05
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： NAOE KAZUHIKO , AOKI MASAHIRO , SATO HIROSHI , TOMORI YUICHI
IPC分类号： G02B6/12 , H01S5/00 , H01S5/026 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To improve the mounting yield of a semiconductor optical element. SOLUTION: After a multiple quantum well active layer 102 and a ridge waveguide 105 have been formed successively on a semiconductor substrate 101, clad layers 701 are formed on both sides of the waveguide 105 and planarized layers 702 are formed in both side sections of the waveguide 105. Then a silicon oxide film 106 is formed on both sidewalls of the waveguide 105, clad layers 710, and planarized layers 702 and an upper electrode 107 connected with the waveguide 105 is formed on the oxide film 106. Thereafter, a solder layer 110 is formed on the electrode 107, and projecting sections 703 are formed on both sides of a stripe-like projecting section 111, so that the distance between the projecting surface of the section 703 and the surface of the substrate 101 is nearly equal to that between the projecting surface of the stripe-like projecting section 111 and the surface of the substrate 101.

116. 发明专利

JPH11112105A FABRICATION OF SEMICONDUCTOR LASER, OPTICAL MODULE AND OPTICAL APPLICATION SYSTEM FABRICATED BY THAT METHOD 失效
公开(公告)号：JPH11112105A
公开(公告)日：1999-04-23
申请号：JP27079797
申请日：1997-10-03
申请人： HITACHI LTD
发明人： SHINODA KAZUNORI , UCHINO MASAICHI , AOKI MASAHIRO
IPC分类号： H01L21/027 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To enhance reproducibility and high volume productivity of phase shift type element excellent in single mode selectivity by employing a resist functioning positively in the development with first developer but functioning negatively in the development with second developer in a semiconductor region for forming diffraction grating. SOLUTION: An n-type InP substrate 1 is spin coated with a polyxycarbonyl- styrene(PBOCST) based resist 2 by 100 nm. It is then subjected to interference exposure by means of an He-Cd laser 3 to obtain an exposure pattern where an exposed part and an unexposed part 5 are arranged periodically at a period of 200 nm. A part of an exposed resist is then coated with the shadow mask 6 of a silicon substrate and subjected to spray development with alkaline aqueous solution 7. Subsequently, the exposed part 4 is dissolved to leave an unexposed part and the developed part is protected by the shadow mask 6 before spray development is performed with an anisole 8. According to the method, a resist pattern having inverted positive and negative phases can be transferred onto the surface of an InP substrate.

117. 发明专利

JPH10284799A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH10284799A
公开(公告)日：1998-10-23
申请号：JP8628297
申请日：1997-04-04
申请人： HITACHI LTD
发明人： AOKI MASAHIRO , NAKAHARA KOJI , UOMI KAZUHISA , TSUCHIYA TOMONOBU , SATO HIROSHI
IPC分类号： G02B6/42 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor laser which is operable with a low threshold current by bringing a quantum-well layer into undoped state of intrinsic carrier concentration of a specified level or less and forming a barrier layer of a semiconductor layer of negative or positive conductivity type having a carrier concentration of a specified level or above. SOLUTION: An n-type InP buffer layer 102, a strained multiple quantum-well active layer 105 where a multiple quantumwell layer is sandwiched by an n-type InGaAsP lower guide layer and an InGaAs upper optical guide layer, a p-type InP clad layer 106 and a high concentration p-type InGaAs cap layer 107 are formed sequentially on an n-type InP semiconductor substrate 101. It is machined into a broad area laser of a ridge waveguide laser structure and and active layer before depositing a silicon oxide 108 and a planarized polyimide and forming upper and lower electrodes 110, 111. The quantum-well layer is brought into undoped state of an intrinsic carrier concentration of 1×10 cm or less, and a barrier layer is composed of a semiconductor layer of negative or positive conductivity type having a carrier concentration of 1×10 cm or above. According to the structure, threshold level can be lowered.

118. 发明专利

JPH10242919A OPTICAL TRANSMISSION SYSTEM 失效
公开(公告)号：JPH10242919A
公开(公告)日：1998-09-11
申请号：JP4036197
申请日：1997-02-25
申请人： HITACHI LTD
发明人： TAKASHIMA SHIGEHIRO , MURATA ATSUSHI , YAMAKI KAZUYOSHI , AOKI MASAHIRO , KUBOKI KATSUHIKO
IPC分类号： H04B10/40 , H04B10/07 , H04B10/50 , H04B10/524 , H04B10/556 , H04B10/60 , H04L25/03 , H04B10/28 , H04B10/00 , H04B10/04 , H04B10/06 , H04B10/08 , H04B10/14 , H04B10/26
摘要： PROBLEM TO BE SOLVED: To provide the method for optimumly adjusting the optical transmission waveform cross point of an optical transmitter capable of simultaneously optimizing both of the minimum receiving sensitivity of a prescribed transmission line in non-transmission and its minimum receiving sensitivity after transmission. SOLUTION: An optimum discrimination level for minimizing minimum receiving sensitivity which is a function of the discrimination levels of a discriminator in a light receiver by using the cross point of a driving signal for a light modulator as a parameter. Since the optimum discrimination level in non-transmission does not generally coincide with that after transmission, a coincident point between the optimum discrimination level in non-transmission and that after transmission is set up by adjusting the cross point of a light modulator driving signal.

119. 发明专利

JPH10223989A WAVEGUIDE TYPE OPTICAL ELEMENT 失效
公开(公告)号：JPH10223989A
公开(公告)日：1998-08-21
申请号：JP2748097
申请日：1997-02-12
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： AOKI MASAHIRO , TSUCHIYA TOMONOBU , OYA AKIRA , SATO HIROSHI , KOMORI MASAAKI , TAKAHASHI MAKOTO , SAKAI YOSHIHISA
IPC分类号： G02B6/42 , G02B6/122 , H01L31/0232 , H01S5/00 , H01S5/026 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To reduce the reactive current of an optical element by forming a current/voltage impressing electrode structure in the partial area of an optical waveguide and an insulating part in a buffer layer, a clad layer, or both of the buffer and clad layers positioned in a light beam spot transforming area. SOLUTION: After a silicon oxide film 106 is formed on the whole surface of a substrate 102, proton implanted areas 107 are formed in a waveguide area having a uniform film thickness and a thick tapered area except parts of about 50μm in thickness by implanting protons into a clad layer 104 through ion implantation by using a photoresist as a masking material. After removing the photoresist mask, silicon oxide films 106 which are formed on the ridge waveguide and into which the protons are not implanted are removed. Then an upper electrode 108 is formed by using an oblique vapor deposition method so that electrodes may be formed on the side walls of the ridge. Electrode windows are formed only in the parts which do not contains implanted protons. The reactive current of a waveguide type optical element can be reduced by providing the proton-implanted areas in no-current injected areas.

120. 发明专利

JPH10173289A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10173289A
公开(公告)日：1998-06-26
申请号：JP32648596
申请日：1996-12-06
申请人： HITACHI LTD
发明人： OYA AKIRA , KOMORI MASAAKI , AOKI MASAHIRO , SATO HIROSHI
IPC分类号： H01L21/205 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To prevent the angular deviation of a shadow mask due to vibrations and the cracking of a substrate due to thermal expansion by holding the shadow mask on the substrate by putting a projecting section provided on either one of the upper surface of the substrate or lower surface of the shadow mask into the recessed section on the other one. SOLUTION: One each linear projecting section 2 which has a normal mesa- like cross section, a height of 20μm, and a width of 50μm at the root of the mesa is formed near the center of a shadow mask 1 in the [011] and [01-1] directions. On the other hand, one each V-shaped groove which has an upper width of 55μm is formed on the surface of an n-type InP substrate 3 in the [011] and [01-1] directions after a silicon oxide film of 1μm in thickness is formed in the substrate 3. The position of the two grooves are decided correspondingly to those of the projecting sections 2. Then a shadow mask 1 is set on the InP substrate 3 so that the direction of the stripes of the mask 1 can become parallel to the [01-1] direction of the substrate 3. When the shadow mask 1 is set on the substrate 3, the mask 1 is held by the substrate 3 by putting the projecting sections 2 in the recessed sections 4 of the substrate 3.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式