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    • 114. 发明专利
    • THIN-FILM MAGNETIC HEAD
    • JPH02203410A
    • 1990-08-13
    • JP2071789
    • 1989-02-01
    • HITACHI LTD
    • ARAI REIKONARUSHIGE SHINJIMITSUOKA KATSUYAIMAGAWA TAKAOSANO MASAAKINISHIOKA KOICHISUDO SHUJIKOYANAGI HIROAKIKOBAYASHI TETSUO
    • G11B5/31
    • PURPOSE:To prevent the lowering of a magnetic permeability when a large anisotropic stress is applied on a magnetic core and the deterioration in the electromagnetic conversion characteristics of the magnetic head by forming an upper magnetic film and a lower magnetic film to a circular shape. CONSTITUTION:This magnetic head consists of the lower magnetic film 2 formed on an Al2O3 film 12 of a substrate 1 and the upper magnetic film 3 which is formed on the lower magnetic film 2 in such a manner as to bring one end 31 into contact with one end 21 of the lower magnetic film 2 and to dispose the other end 32 to face the other end of the lower magnetic film 22 via a magnetic gap G and constitutes a magnetic circuit having a magnetic gap S in a part together with the lower magnetic film 2. The stress acting on the films is determined by the shape of the magnetic core and since the region in the front end part of the core is sensitive to recording and reproducing characteristics, the lower and upper magnetic materials 2, 3 are formed to the circular shape so as to relieve the stress in the front end part of the core. The magnetic anisotropy of the upper magnetic film 3 and the lower magnetic film 2 of the thin-film magnetic head is diminished in this way and the stable electromagnetic conversion characteristics which obviates the generation of the reproducing waveform distortions are obtd.
    • 115. 发明专利
    • THIN-FILM MAGNETIC HEAD
    • JPH0283810A
    • 1990-03-23
    • JP23528988
    • 1988-09-20
    • HITACHI LTD
    • KOYANAGI HIROAKIFUKUI HIROSHITANABE MASANORIAIHARA MAKOTOYAMAGATA KOJISANO MASAAKIMITSUOKA KATSUYAARAI REIKOKOBAYASHI TETSUO
    • G11B5/31
    • PURPOSE:To stabilize magnetic domain structure and to obtain the reproduction signal which is decreased in waveform distortions and bit shifts by determining the magnetorestriction constant of magnetic films by the quality of the material which comes into contact with the magnetic films and maintaining stress induced type magnetically anisotropic energy at nearly the same level in the film thickness direction. CONSTITUTION:The stress induced type magnetically anisotropic energy of the magnetic films is expressed by the function of the magnetorestriction constant which is the property of the magnetic films and the main stress generated in the magnetic films. The main stress is generated by the difference between the coefft. of thermal expansion of the magnetic films and the coefft. of thermal expansion of the material with which the magnetic films are in contact. One side of the lower magnetic film 3 comes into contact with an underlying layer 2 and the opposite side comes into contact with an insulating layer 5. On the other hand, one side of the upper magnetic film 7 comes into contact with the insulating layer 5 and the opposite side comes into contact with the protective layer 8. The magnetically anisotropic energy is, thereupon, brought to the similar value of the insulating layer 5 side and the protective layer 8 and underlying layer 2 by changing the magnetorestriction constant of the surface of the magnetic films in accordance with the coefft. of thermal expansion of the material which comes into contact therewith, by which the magnetic domain structure is stabilized and the reproduction signal decreased in the waveform distortions and bit shifts is obtd.
    • 117. 发明专利
    • OPTICAL SWITCH
    • JPS64934A
    • 1989-01-05
    • JP15546287
    • 1987-06-24
    • HITACHI LTD
    • MINEMURA HIROYUKISATO YOSHIOTSUBOI NOBUYOSHIKOYANAGI HIROAKI
    • G02F1/31G02B6/12G02F1/01
    • PURPOSE:To enable an optical switch to operate even if a conductive path is not used by using a superconductor which makes a state change between superconduction and normal conduction. CONSTITUTION:This optical switch is constituted by utilizing the change in the interaction with light arising from the state change between the superconduction and the normal conduction of the superconductor 10 formed on a transparent substrate 20. Light is reflected by a Meissner effect when the light is projected on the material in the superconducting state. The Meissner effect disappears and the quantity of reflected light decreases when the material is transited to the normal conducting state by temp., electric current and magnetic field, etc. The change in the reflectivity or transmissivity of the superconducting state and the normal conducting state is settable as desired by adequately selecting the film thickness of the superconducting material at this time. The optical switch of the simple constitution is thereby obtd.