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111. 发明申请

US20110252225A1 COMPUTER SYSTEM AND BOOTUP AND SHUTDOWN METHOD THEREOF 有权
标题翻译：计算机系统及其启动和关闭方法
公开(公告)号：US20110252225A1
公开(公告)日：2011-10-13
申请号：US13118492
申请日：2011-05-30
申请人： Chih-Chien Liu , Feng-Hsun Chen , Chien-Ting Yeh
发明人： Chih-Chien Liu , Feng-Hsun Chen , Chien-Ting Yeh
IPC分类号： G06F9/00 , G06F1/26
CPC分类号： G06F9/4418 , G06F9/4401
摘要： A computer system and a bootup and shutdown method thereof are provided. The computer system includes a memory, a chipset, a basic input/output system (BIOS), and an embedded controller, and an operating system (OS) is executed in the computer system. In the shutdown and bootup method, the embedded controller is notified to prepare to enter into a standby mode when the BIOS intercepts a shutdown instruction issued by the OS. The content of a register of the chipset is set according to the standby mode. A current operation mode data of the computer system is retained, and power is continuously supplied to the memory to make the computer system enter into the standby mode.
摘要翻译：提供了一种计算机系统及其启动和关闭方法。计算机系统包括存储器，芯片组，基本输入/输出系统（BIOS）和嵌入式控制器，并且在计算机系统中执行操作系统（OS）。在关机和启动方式中，当BIOS拦截OS发出的关机指令时，通知嵌入式控制器准备进入待机模式。根据待机模式设置芯片组寄存器的内容。保持计算机系统的当前操作模式数据，并且将电力连续地提供给存储器以使计算机系统进入待机模式。

112. 发明申请

US20110241212A1 STRESS LAYER STRUCTURE 审中-公开
标题翻译：应力层结构
公开(公告)号：US20110241212A1
公开(公告)日：2011-10-06
申请号：US13150341
申请日：2011-06-01
申请人： Chin-Sheng YANG , Chih-Chien Liu
发明人： Chin-Sheng YANG , Chih-Chien Liu
IPC分类号： H01L23/522
CPC分类号： H01L21/823807 , H01L27/0207 , H01L29/7843
摘要： A stress layer structure includes an active stress portion and a dummy stress portion, both formed of a stress material and disposed on the substrate. The active stress portion includes first and second active stress patterns in a region where active devices are formed. The first and second active stress patterns coverrespective active regions, and are separated from each other. The dummy stress portion includes a first dummy stress pattern formed directly on the substrate and disposed between and separated from the first and second active stress patterns.
摘要翻译：应力层结构包括由应力材料形成并设置在基板上的主应力部分和虚拟应力部分。主动应力部分包括形成有源器件的区域中的第一和第二有源应力图案。第一和第二主动应力模式涵盖相关的活动区域，并且彼此分离。虚拟应力部分包括直接形成在基板上并且设置在第一和第二主动应力图案之间并与之分离的第一虚拟应力图案。

113. 发明授权

US07576455B2 High performance focusing actuator of a voice coil motor 失效
标题翻译：音圈电机的高性能聚焦执行器
公开(公告)号：US07576455B2
公开(公告)日：2009-08-18
申请号：US11503057
申请日：2006-08-14
申请人： Chi-Hsin Ho , Chih-Chien Liu
发明人： Chi-Hsin Ho , Chih-Chien Liu
IPC分类号： H02K41/00
CPC分类号： H02K41/0356 , G02B7/08
摘要： A high performance focusing actuator of a voice coil motor comprises a retaining unit having a plastic retaining frame; a center portion of the plastic retaining frame being a receiving space; two opposite corners of the receiving space being chamfered; an inner side of each chamfered side being formed with a slide portion; and a metal rear cover plate having a shape corresponding to that of the plastic retaining frame; the metal rear cover plate having an open space coaxial with the receiving space of the plastic retaining frame; an outer side of the metal rear cover plate having four outer plates; each of two opposite corners of each outer plate being formed with an inclined guide surface corresponding to the slide portion of the plastic retaining frame; an iron receiving gap being formed between an inclined guide surface and outer plate; and each iron receiving gap receiving a magnet.
摘要翻译：音圈马达的高性能聚焦致动器包括具有塑料保持架的保持单元; 塑料保持框架的中心部分是容纳空间; 接收空间的两个相对角被倒角; 每个倒角侧的内侧形成有滑动部分; 和金属后盖板，其形状与塑料保持架的形状相对应; 金属后盖板具有与塑料保持框架的容纳空间同轴的开放空间; 金属后盖板的外侧有四个外板; 每个外板的两个相对的角部中的每一个形成有对应于塑料保持框架的滑动部分的倾斜导向表面; 在倾斜的引导表面和外部板之间形成铁接收间隙; 并且每个铁接收间隙接收磁体。

114. 发明申请

US20070022308A1 METHOD FOR INSTANT ON MULTIMEDIA PLAYING 有权
标题翻译：多媒体播放方法
公开(公告)号：US20070022308A1
公开(公告)日：2007-01-25
申请号：US11307393
申请日：2006-02-06
申请人： Yi-Chang Chen , Chih-Chien Liu
发明人： Yi-Chang Chen , Chih-Chien Liu
IPC分类号： G06F1/26
CPC分类号： G06F1/3203 , H04N21/4143 , H04N21/42646 , H04N21/4325 , H04N21/4432 , H04N21/4435 , H04N21/482 , H04N21/8193
摘要： A method for instant on multimedia playing is provided, which enables a computer to selectively enter an operation mode of an IOMP (Instant On Multimedia Player) program when it enters a power conservation mode. First, a computer system stays in the power conservation mode, until an IOMP activating signal has been received. Next, the computer system saves the hardware information of the computer into a memory. And then a processor of the computer reads an IOMP program from another memory and executes the IOMP program to produce and display a human-computer interface menu, which is provided for users to select files for playing. Next, the processor executes the IOMP program to play the files selected previously. Finally, upon the receipt of a recovery instruction, the computer system saves the hardware information back into the computer to recover the computer to the power conservation mode.
摘要翻译：提供一种用于即时多媒体播放的方法，其使得计算机能够在进入功率节省模式时选择性地进入IOMP（即时多媒体播放器）程序的操作模式。首先，计算机系统保持在省电模式，直到接收到IOMP激活信号。接下来，计算机系统将计算机的硬件信息保存到存储器中。然后计算机的处理器从另一个存储器读取IOMP程序，并执行IOMP程序以产生并显示人机界面菜单，该菜单为用户选择要播放的文件。接下来，处理器执行IOMP程序来播放以前选择的文件。最后，在收到恢复指令后，计算机系统将硬件信息保存回计算机，以将计算机恢复到省电模式。

115. 发明申请

US20060166011A1 Method of reducing number of particles on low-k material layer 有权
标题翻译：减少低k材料层上颗粒数的方法
公开(公告)号：US20060166011A1
公开(公告)日：2006-07-27
申请号：US11351650
申请日：2006-02-10
申请人： Mei-Ling Chen , Chih-Chien Liu
发明人： Mei-Ling Chen , Chih-Chien Liu
IPC分类号： H05H1/24 , B32B13/04
CPC分类号： H01L21/02274 , C23C16/401 , C23C16/4405 , H01L21/02115 , H01L21/02164 , H01L21/31633 , H01L21/76801 , H01L21/76826
摘要： A method of reducing the number of particles on a low-k material layer is described. The low-k material layer is formed by a plasma enhanced chemical vapor deposition process, wherein a reaction gas, a cleaning gas, a high-frequency power and a low-frequency power are used. The method includes turning off the reaction gas and the low-frequency power after the low-k material layer is formed, and continuing to provide the cleaning gas during a delay time.
摘要翻译：描述了一种减少低k材料层上的颗粒数量的方法。低k材料层通过等离子体增强化学气相沉积法形成，其中使用反应气体，清洁气体，高频功率和低频功率。该方法包括在形成低k材料层之后关闭反应气体和低频功率，并且在延迟时间内继续提供清洁气体。

116. 发明申请

US20060099824A1 High density plasma chemical vapor deposition process 有权
公开(公告)号：US20060099824A1
公开(公告)日：2006-05-11
申请号：US11315904
申请日：2005-12-22
申请人： Chih-Chien Liu , Ta-Shan Tseng , W.B. Shieh , J.Y. Wu , Water Lur , Shih-Wei Sun
发明人： Chih-Chien Liu , Ta-Shan Tseng , W.B. Shieh , J.Y. Wu , Water Lur , Shih-Wei Sun
IPC分类号： H01L21/31
CPC分类号： H01L21/02112 , H01L21/02164 , H01L21/02274 , H01L21/0276 , H01L21/31612 , H01L21/32136 , H01L21/32139 , H01L21/76834 , H01L21/76837 , H01L21/76838
摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

117. 发明授权

US06440861B1 Method of forming dual damascene structure 有权
标题翻译：形成双镶嵌结构的方法
公开(公告)号：US06440861B1
公开(公告)日：2002-08-27
申请号：US09652471
申请日：2000-08-31
申请人： Chih-Chien Liu , Jui-Tsen Huang , Yi-Fang Cheng , Ming-Sheng Yang
发明人： Chih-Chien Liu , Jui-Tsen Huang , Yi-Fang Cheng , Ming-Sheng Yang
IPC分类号： H01L21302
CPC分类号： H01L21/76835 , H01L21/76808 , H01L2221/1063
摘要： A method of forming a dual damascene structure. A first dielectric layer and a second dielectric layer are sequentially formed over a substrate. A first photoresist layer is formed over the second dielectric layer. Photolithographic and etching operations are conducted to remove a portion of the second dielectric layer and the first dielectric layer so that a via opening is formed. A conformal third dielectric layer is coated over the surface of the second dielectric layer and the interior surface of the via opening. The conformal third dielectric layer forms a liner dielectric layer. A second photoresist layer is formed over the second dielectric layer and then the second photoresist layer is patterned. Using the patterned second photoresist layer as a mask, a portion of the second dielectric layer is removed to form a trench. The patterned second photoresist layer is removed. Conductive material is deposited over the substrate to fill the via opening and the trench. Finally, chemical-mechanical polishing is conducted to remove excess conductive material above the second dielectric layer.
摘要翻译：形成双镶嵌结构的方法。第一电介质层和第二电介质层依次形成在衬底上。在第二介电层上形成第一光致抗蚀剂层。进行光刻和蚀刻操作以去除第二介电层和第一介电层的一部分，从而形成通孔。保形第三电介质层涂覆在第二电介质层的表面和通孔开口的内表面上。保形第三电介质层形成衬里电介质层。在第二电介质层上形成第二光致抗蚀剂层，然后对第二光致抗蚀剂层进行图案化。使用图案化的第二光致抗蚀剂层作为掩模，去除第二介电层的一部分以形成沟槽。去除图案化的第二光致抗蚀剂层。导电材料沉积在衬底上以填充通孔和沟槽。最后，进行化学机械抛光以除去第二介电层上方的多余的导电材料。

118. 发明授权

US06352918B1 Method of forming inter-metal interconnection 有权
标题翻译：形成金属间互连的方法
公开(公告)号：US06352918B1
公开(公告)日：2002-03-05
申请号：US09199877
申请日：1998-11-24
申请人： Yimin Huang , Chih-Chien Liu , Tri-Rung Yew
发明人： Yimin Huang , Chih-Chien Liu , Tri-Rung Yew
IPC分类号： H01L21311
CPC分类号： H01L21/76802
摘要： A method of forming an inter-metal interconnection is provided. A substrate is provided. A dielectric layer with a metal plug therein is formed on the substrate. An IMD layer is formed on the dielectric layer. An insulating layer and a PE-oxide layer are formed on the IMD layer. A photolithography and etching process is performed to form a trench in the IMD layer and to expose the metal plug in the dielectric layer. A metal is filled into the trench to electrically connect to the metal plug.
摘要翻译：提供了形成金属间互连的方法。提供基板。在基板上形成有金属塞的电介质层。在电介质层上形成IMD层。在IMD层上形成绝缘层和PE-氧化物层。进行光刻和蚀刻工艺以在IMD层中形成沟槽并露出介电层中的金属插塞。将金属填充到沟槽中以电连接到金属插头。

119. 发明授权

US06339025B1 Method of fabricating a copper capping layer 有权
标题翻译：铜覆盖层的制造方法
公开(公告)号：US06339025B1
公开(公告)日：2002-01-15
申请号：US09304436
申请日：1999-04-03
申请人： Chih-Chien Liu , Kun-Chih Wang , Wen-Yi Hsieh , Yimin Huang
发明人： Chih-Chien Liu , Kun-Chih Wang , Wen-Yi Hsieh , Yimin Huang
IPC分类号： H01L2144
CPC分类号： H01L21/76886 , H01L21/3185 , H01L21/76807 , H01L21/76834 , H01L21/76849 , H01L21/76867
摘要： A method of fabricating a copper capping layer. A silicon rich nitride layer is formed on an exposed copper layer. Since the silicon rich nitride layer has more dangling bonds inside, the silicon in the silicon rich nitride layer easily reacts with the copper and a copper silicide layer is formed between the copper and the silicon rich nitride layer. Therefore, adhesion of the copper and the silicon rich nitride layer can be improved.
摘要翻译：一种制造铜覆盖层的方法。在暴露的铜层上形成富氮的氮化物层。由于富含硅的氮化物层内部具有更多的悬空键，富硅氮化物层中的硅容易与铜反应，并且在铜和富硅氮化物层之间形成铜硅化物层。因此，可以提高铜和富硅氮化物层的粘合性。

120. 发明授权

US06200653B1 Method of forming an intermetal dielectric layer 失效
公开(公告)号：US06200653B1
公开(公告)日：2001-03-13
申请号：US09471055
申请日：1999-12-22
申请人： Cheng-Yuan Tsai , Chih-Chien Liu , Ming-Sheng Yang
发明人： Cheng-Yuan Tsai , Chih-Chien Liu , Ming-Sheng Yang
IPC分类号： H05H124
CPC分类号： H01L21/02131 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31053 , H01L21/31629 , H01L21/76801 , H01L21/76829
摘要： A method is used to form an intermetal dielectric layer. According to the invention, an unbiased-unclamped fluorinated silicate glass layer used as a protection layer is formed by high density plasma chemical vapor deposition on a biased-clamped fluorinated silicate glass layer formed by high density plasma chemical vapor deposition to prevent the biased-clamped fluorinated silicate glass layer from being exposed in a planarization process.

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