专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明授权

US07456488B2 Porogen material 有权
公开(公告)号：US07456488B2
公开(公告)日：2008-11-25
申请号：US10301109
申请日：2002-11-21
申请人： Chongying Xu , Alexander S. Borovik , Thomas H. Baum
发明人： Chongying Xu , Alexander S. Borovik , Thomas H. Baum
IPC分类号： H01L29/12 , H01L31/0256
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/31695 , Y10T428/2982 , Y10T428/2985 , Y10T428/2998
摘要： A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

112. 发明授权

US07437060B2 Delivery systems for efficient vaporization of precursor source material 有权
标题翻译：用于高效蒸发前体源材料的输送系统
公开(公告)号：US07437060B2
公开(公告)日：2008-10-14
申请号：US11157733
申请日：2005-06-21
申请人： Luping Wang , Thomas H. Baum , Chongying Xu
发明人： Luping Wang , Thomas H. Baum , Chongying Xu
IPC分类号： B01D7/00
CPC分类号： C23C16/4481 , B01D1/0082
摘要： A delivery system for vaporizing and delivering vaporized solid and liquid precursor materials at a controlled rate having particular utility for semiconductor manufacturing applications. The system includes a vaporization vessel, a processing tool and a connecting vapor line therebetween, where the system further includes an input flow controller and/or an output flow controller to provide a controlled delivery of a vaporizable source material to the vaporization vessel and a controlled flow rate of vaporized source material to the processing tool.
摘要翻译：一种用于以对于半导体制造应用具有特殊用途的受控速率蒸发并递送蒸发的固体和液体前体材料的输送系统。该系统包括蒸发容器，处理工具和它们之间的连接蒸汽管线，其中系统还包括输入流量控制器和/或输出流量控制器，以向蒸发容器提供可蒸发的源材料的受控输送，蒸发的原料流向加工工具的流量。

113. 发明授权

US07423166B2 Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films 有权
标题翻译：稳定的环硅氧烷用作低介电常数薄膜的CVD前体
公开(公告)号：US07423166B2
公开(公告)日：2008-09-09
申请号：US10650282
申请日：2003-08-28
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Ravi K. Laxman , Alexander S. Borovik
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Ravi K. Laxman , Alexander S. Borovik
IPC分类号： C07F7/08
CPC分类号： C07F7/089 , B01D3/36 , C07F7/20 , C07F7/21 , C08G77/045 , C08G77/12 , C08G77/14 , C08G77/18 , C08G77/20 , C08G77/34 , C08L83/04 , C09D4/00 , C23C16/401 , C23C16/4402 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/3122 , C08L2666/28 , C08G77/04
摘要： A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature deposition reactions occurring in the heated environment of the CVD delivery lines and process hardware.
摘要翻译：一种用于化学气相沉积（CVD）工艺的硅氧烷介电前体，其已经配备有选自自由基抑制剂，封端剂及其混合物的稳定剂。稳定的硅氧烷电介质前体减少了在CVD输送线和加工硬件的加热环境中发生的过早沉积反应的发生。

114. 发明授权

US07371880B2 Copper (I) compounds useful as deposition precursors of copper thin films 有权
标题翻译：可用作铜薄膜沉积前体的铜（I）化合物
公开(公告)号：US07371880B2
公开(公告)日：2008-05-13
申请号：US11626363
申请日：2007-01-23
申请人： Chongying Xu , Alexander Borovik , Thomas H. Baum
发明人： Chongying Xu , Alexander Borovik , Thomas H. Baum
IPC分类号： C07F1/08 , C23C16/00
CPC分类号： C07C257/14 , C07F1/005 , C23C16/18
摘要： Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.
摘要翻译：用于在制造半导体器件中形成铜薄膜的铜（I）脒前体，以及使用化学气相沉积或原子层沉积工艺在基片上沉积铜（I）脒前体的方法。

115. 发明授权

US07326673B2 Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates 失效
标题翻译：使用长链有机硫醇或长链乙酸酯处理半导体衬底
公开(公告)号：US07326673B2
公开(公告)日：2008-02-05
申请号：US10303450
申请日：2002-11-25
申请人： Chongying Xu , David W. Minsek , Thomas H. Baum , Matthew Healy
发明人： Chongying Xu , David W. Minsek , Thomas H. Baum , Matthew Healy
IPC分类号： C25F3/30 , C11D3/34 , C11D3/30
CPC分类号： G03F7/425 , B08B7/0021 , C11D3/02 , C11D3/044 , C11D3/43 , C11D7/02 , C11D11/0047 , G03F7/40 , G03F7/422 , G03F7/426
摘要： Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).
摘要翻译：用于从半导体晶片或其它基底去除不想要的材料（例如未曝光的光致抗蚀剂，金属氧化物，CMP残渣等）的化学配方和方法。该制剂采用超临界流体洗涤组合物，其可进一步包括（I）助溶剂，（II）表面活性剂，（III）螯合剂和/或（Ⅳ）化学反应物（s）。

116. 发明授权

US07198815B2 Tantalum amide complexes for depositing tantalum-containing films, and method of making same 有权
标题翻译：用于沉积含钽膜的钽酰胺配合物及其制备方法
公开(公告)号：US07198815B2
公开(公告)日：2007-04-03
申请号：US11224588
申请日：2005-09-12
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum
IPC分类号： B05D5/12
CPC分类号： C23C16/45553 , C07F9/005 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45525 , H01L21/28556 , Y10T29/49117
摘要： Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.
摘要翻译：钽前体可用于通过诸如化学气相沉积和原子层沉积的方法在衬底上沉积氮化钽或钽氧化物材料。这些前体可用于在具有铜金属化和/或铁电薄膜的微电子器件结构上形成钽基扩散阻挡层。

117. 发明授权

US06822107B1 Chemical vapor deposition precursors for deposition of copper 失效
标题翻译：用于沉积铜的化学气相沉积前体
公开(公告)号：US06822107B1
公开(公告)日：2004-11-23
申请号：US10643272
申请日：2003-08-19
申请人： Thomas H. Baum , Gautam Bhandari , Chongying Xu
发明人： Thomas H. Baum , Gautam Bhandari , Chongying Xu
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07C229/76 , C07C2601/18
摘要： Copper precursors of the formula (I): wherein: Cu is Cu(I) or Cu(II); x is an integer having a value of from 0 to 4; each of R, R′ and R″ may be the same as or different from one another and each is independently selected from the group consisting of H, C1-C6 alky), C1-C6 perfluoroalkyl and C6-C10 aryl; when Cu is Cu(I), A is a Lewis base; when Cu is Cu(II), A is: wherein x, R, R′ and R″ are as specified above.
摘要翻译：式（I）的铜前体：其中：Cu是Cu（I）或Cu（II）; x是0至4的整数; R，R'和R“可以相同各自独立地选自H，C 1 -C 6烷基），C 1 -C 6全氟烷基和C 6 -C 10芳基;当Cu是Cu（I）时，A是路易斯碱;当Cu 是Cu（II），A是：其中x，R，R'和R“如上所述。

118. 发明授权

US06767830B2 Br2SbCH3 a solid source ion implant and CVD precursor 有权
标题翻译： Br2SbCH3是固体源离子注入和CVD前体
公开(公告)号：US06767830B2
公开(公告)日：2004-07-27
申请号：US10213669
申请日：2002-08-07
申请人： Ziyun Wang , Chongying Xu , Thomas H. Baum , Michael A. Todd , Niamh McMahon
发明人： Ziyun Wang , Chongying Xu , Thomas H. Baum , Michael A. Todd , Niamh McMahon
IPC分类号： H01L2144
CPC分类号： C23C16/301 , C07F9/90 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02538 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/0262
摘要： A volatile solid-source novel antimony precursor, Br2SbCH3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br2SbCH3 crystalline product.
摘要翻译：可用于半导体处理室中的挥发性固体源新型锑前体Br2SbCH3，用于通过诸如化学气相沉积，离子注入，分子束外延，扩散和快速热处理的沉积方法在衬底上沉积锑。本发明的新型锑化合物是通过在形成Br2SbCH3结晶产物的加热条件下将三溴化锑与三甲基锑结合而合成的。

119. 发明授权

US06589329B1 Composition and process for production of copper circuitry in microelectronic device structures 失效
标题翻译：在微电子器件结构中生产铜电路的组成和工艺
公开(公告)号：US06589329B1
公开(公告)日：2003-07-08
申请号：US09522102
申请日：2000-03-09
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C23C1616
CPC分类号： C23C16/18 , C07F1/08 , C07F7/0803
摘要： Compositions useful for chemical vapor delivery (CVD) formation of copper layers in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head or for circuitization of packaging components. The copper precursor formulation may include one or more copper precursors, e.g., a precursor of the formula hfac(Cu)L where L is a low-cost ligand such as an alkene and/or alkyne such as [(hfac)Cu]2 (DMDVS). The formulation may include in addition to the copper precursor(s) one or more low-cost ligand species such as alkenes, alkynes, dienes and combinations thereof, to increase thermal stability of the formulation and provide enhanced vaporization properties for CVD.
摘要翻译：可用于半导体集成电路中铜层的化学气相传输（CVD）形成的组合物，例如半导体器件结构中的互连金属化，用于电镀的粘合种子层，用于沉积薄膜记录头或用于封装的电路化组件。铜前体制剂可以包括一种或多种铜前体，例如式hfac（Cu）L的前体，其中L是低成本配体如烯烃和/或炔烃，例如[（hfac）Cu] 2（ DMDVS）。除了铜前体之外，配方可以包括一种或多种低成本配体物质，例如烯烃，炔，二烯及其组合，以增加制剂的热稳定性并提供CVD的增强的气化性质。

120. 发明授权

US06458984B1 Chemical method for removal and analysis of boron impurities in tetraethylorthosilicate (TEOS) 失效
标题翻译：硼酸四乙酯（TEOS）中硼杂质的去除和分析的化学方法
公开(公告)号：US06458984B1
公开(公告)日：2002-10-01
申请号：US09540584
申请日：2000-03-31
申请人： Thomas H. Baum , Chongying Xu , Frank R. Hedges , David Daniel Bernhard , Brian L. Benac , Scott L. Battle , John M. Lansdown
发明人： Thomas H. Baum , Chongying Xu , Frank R. Hedges , David Daniel Bernhard , Brian L. Benac , Scott L. Battle , John M. Lansdown
IPC分类号： C07F704
CPC分类号： C07F7/045 , C07F7/20
摘要： A method of purifying tetraethylorthosilicate (TEOS) to remove boron impurities therefrom, and a related method of analyzing TEOS to determine concentration of boron impurities therein.
摘要翻译：纯化原硅酸四乙酯（TEOS）以除去硼杂质的方法，以及分析TEOS以确定其中硼杂质浓度的相关方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式