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    • 103. 发明申请
    • A GERMANIUM SEMICONDUCTOR STRUCTURE AND A METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE
    • 锗族半导体结构和形成半导体结构的方法
    • WO2011061230A1
    • 2011-05-26
    • PCT/EP2010/067691
    • 2010-11-17
    • WESTFÄLISCHE WILHELMS-UNIVERSITÄT MÜNSTERBRACHT, Hartmut
    • BRACHT, Hartmut
    • H01L21/263H01L21/265H01L21/336H01L29/16
    • H01L21/263H01L21/26513H01L29/16H01L29/66575
    • The present disclosure provides a method (1000) for forming a semiconductor structure (1, 1a, 1b, 1c) and an apparatus (500) for the manufacture of the semiconductor structure (1, 1a, 1b, 1c). The semiconductor structure (1, 1a, 1b, 1c) comprises at least one semiconductor layer (20, 20a, 20b) with a concentration of interstitials being substantially higher than an equilibrium concentration of the interstitial in the at least one semiconductor layer (20, 20a, 20b), The method (1000) comprises providing (100) and a processing (200) of the at least one semiconductor layer (20, 20a, 20b). The processing (200) comprises an irradiating (210) and an annealing (220) of the at least one semiconductor layer (20, 20a, 20b). The irradiating (210) and the annealing (220) of the at least one semiconductor layer (20, 20a, 20b) are substantially performed concurrently. The semiconductor structure (1, 1a, 1b, 1c) may comprise an n-type Ge MOSFET (50). The apparatus (500) comprises a production chamber (510), a heating unit (520) and a beam access (530) or a beam unit (550). The apparatus (500) may concurrently expose the at least one semiconductor layer (20, 20a, 20b) to a target temperature and a beam (540), The present disclosure provides the n-type Ge MOSFET (50).
    • 本公开提供了一种用于形成用于制造半导体结构(1,1a,1b,1c)的半导体结构(1,1a,1b,1c)和装置(500)的方法(1000)。 半导体结构(1,1a,1b,1c)包括至少一个半导体层(20,20a,20b),其间隙的浓度基本上高于至少一个半导体层(20,20a,20b)中的间隙的平衡浓度, 所述方法(1000)包括提供所述至少一个半导体层(20,20a,20b)的(100)和处理(200)。 处理(200)包括至少一个半导体层(20,20a,20b)的照射(210)和退火(220)。 基本上同时执行至少一个半导体层(20,20a,20b)的照射(210)和退火(220)。 半导体结构(1,1a,1b,1c)可以包括n型Ge MOSFET(50)。 设备(500)包括生产室(510),加热单元(520)和梁入口(530)或梁单元(550)。 该装置(500)可以将至少一个半导体层(20,20a,20b)同时暴露于目标温度和光束(540)。本公开提供了n型Ge MOSFET(50)。
    • 110. 发明申请
    • CLASSIFICATION OF NEUROLOGICAL OR PSYCHIATRIC DISEASE MANIFESTATIONS USING MULTI-DIMENSIONAL CEREBROSPINAL FLUID ANALYSIS
    • WO2022207748A1
    • 2022-10-06
    • PCT/EP2022/058485
    • 2022-03-30
    • WESTFÄLISCHE WILHELMS-UNIVERSITÄT MÜNSTERTHE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    • WIENDL, HeinzMEYER ZU HÖRSTE, GerdGROSS, Catharina C.SCHULTE-MECKLENBECK, AndreasBARANZINI, Sergio E.MADIREDDY, Lohith
    • G01N33/569G01N2800/28G01N2800/30G01N33/56972
    • The present invention relates to a method of stratifying a subject with neurological or psychiatric disease manifestation, preferably with neuro-inflammatory autoimmune diseases a) determining i) a level of B cells in a test cerebrospinal fluid (CSF) sample obtained from a subject; ii) a level of immune cells per μl in said test CSF sample obtained from said subject; iii) a level of NKT cells in said test CSF sample obtained from said subject; iv) a level of monocytes in said test CSF sample obtained from said subject, and v) a level of CD56dim CD16+ NK cells in a test peripheral blood (PB) sample obtained from said subject, and b) stratifying said subject as suffering from neuro-inflammatory autoimmune diseases, if the following are fulfilled: i) the level of B cells is increased relative to corresponding levels of B cells in control CSF samples obtained from subjects not suffering from neuro-inflammatory autoimmune diseases; ii) the level of immune cells per μl is increased relative to corresponding levels of immune cells per μl in said control CSF samples obtained from said subjects not suffering from neuro-inflammatory autoimmune diseases; iii) the level of NKT cells is decreased relative to corresponding levels of NKT cells in said control CSF samples obtained from said subjects not suffering from neuro- inflammatory autoimmune diseases; iv) the level of monocytes is decreased relative to corresponding levels of monocytes in said control CSF samples obtained from said subjects not suffering from neuro-inflammatory autoimmune diseases; v) the level of CD56dim CD16+ NK cells is decreased relative to corresponding levels of CD56dim CD16+ NK cells in control PB samples obtained from said subjects not suffering from neuro-inflammatory autoimmune diseases, wherein the combination of said levels i) - v) of step b) is indicative for whether said subject is suspected to suffer from neuro-inflammatory autoimmune diseases or from another neurological or psychiatric disease manifestation other than neuro-inflammatory autoimmune disease. Further, the present invention relates to a data processing system comprising a processor configured to perform the method of the invention, a flow cytometry device capable of detecting the abovementioned levels and a computer program comprising instructions to cause the data processing system or the flow cytometry device to execute the steps of the method of the invention. Finally, the present invention relates to a kit comprising a fluorescently labeled binding partner for certain surface markers used in the method of the invention.