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    • 101. 发明授权
    • Optical receiver
    • 光接收机
    • US07366428B2
    • 2008-04-29
    • US10940529
    • 2004-09-14
    • Yoshiki KuharaMitsuaki NishieShigeo Hayashi
    • Yoshiki KuharaMitsuaki NishieShigeo Hayashi
    • H04B10/06
    • H04B10/691
    • An optical receiver includes a light-receiving part and a control part. The light-receiving part includes an APD, a PIN-PD, and a branching optical device. First signal light is incident on the light-receiving part and is divided into second signal light and third signal light which are incident on the APD and the PIN-PD, respectively, by the branching optical device. Due to this structure, the third signal light is incident on the PIN-PD without the quantity thereof being varied depending on the polarization state of the first signal light. The control part generates a supply voltage at which a desired avalanche multiplication factor is obtained in the APD on the basis of the output current from the PIN-PD. According to the above-described structure, the avalanche multiplication factor of the APD is accurately controlled on the basis of the output current of the PIN-PD.
    • 光接收器包括光接收部分和控制部分。 光接收部分包括APD,PIN-PD和分支光学装置。 第一信号光入射在光接收部分上,分别由分支光学装置分别入射到APD和PIN-PD上的第二信号光和第三信号光。 由于这种结构,第三信号光入射在PIN-PD上,其数量根据第一信号光的偏振状态而变化。 控制部分基于来自PIN-PD的输出电流产生在APD中获得期望的雪崩倍增因子的电源电压。 根据上述结构,基于PIN-PD的输出电流来精确地控制APD的雪崩倍增系数。
    • 102. 发明授权
    • Photodiode array and optical receiver device including the same
    • 光电二极管阵列和包括其的光接收装置
    • US07355259B2
    • 2008-04-08
    • US11207449
    • 2005-08-18
    • Akira YamaguchiYoshiki Kuhara
    • Akira YamaguchiYoshiki Kuhara
    • H01L31/06
    • H01L31/105H01L27/1446H01L31/12
    • Disclosed is a photodiode array which includes a plurality of p-i-n photodiodes arrayed on a semi-insulative semiconductor substrate, each photodiode including an n-type semiconductor layer grown on the substrate, an i-type semiconductor layer grown on the n-type semiconductor layer, a p-type semiconductor layer grown on the i-type semiconductor layer, an n-type electrode provided on the n-type semiconductor layer in a region exposed by partially removing the p-type semiconductor layer and the i-type semiconductor layer, and a p-type electrode provided on the p-type semiconductor layer. A trench is provided between the two adjacent photodiodes by partially removing the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer. Consequently, the size and pitch of the photodiodes can be decreased and crosstalk between the photodiodes can be reduced. Also disclosed is an optical receiver device including the photodiode array.
    • 公开了一种光电二极管阵列,其包括排列在半绝缘半导体衬底上的多个引脚光电二极管,每个光电二极管包括在衬底上生长的n型半导体层,在n型半导体层上生长的i型半导体层, 在i型半导体层上生长的p型半导体层,在通过部分去除p型半导体层和i型半导体层而露出的区域中的n型半导体层上设置的n型电极,以及 设置在p型半导体层上的p型电极。 通过部分去除p型半导体层,i型半导体层和n型半导体层,在两个相邻的光电二极管之间设置沟槽。 因此,可以减小光电二极管的尺寸和间距,并且可以减小光电二极管之间的串扰。 还公开了包括光电二极管阵列的光接收器件。
    • 103. 发明授权
    • Photodetector and optical receiver
    • 光电检测器和光接收器
    • US07326905B2
    • 2008-02-05
    • US11006192
    • 2004-12-07
    • Yoshiki KuharaMitsuaki NishieShigeo Hayashi
    • Yoshiki KuharaMitsuaki NishieShigeo Hayashi
    • H01J40/14
    • H04B10/691H03F3/087
    • An optical receiver is provided with an optical-signal-receiving section and a controlling section. The optical-signal-receiving section incorporates a photodetector. The photodetector has an APD. Through a passivation film, a photoconductor is placed on a portion of a surface of the APD which remains unoccupied by an optical-signal-receiving area of the APD. When this structure is employed, the signal for controlling the avalanche multiplication factor of the APD can be obtained from the photoconductor. Consequently, the signal can be obtained with a simple structure. Furthermore, the photoconductor has a good linearity of the output current even to a weak lightwave. As a result, the output current I for controlling the avalanche multiplication factor of the APD can be obtained with high accuracy.
    • 光接收器设置有光信号接收部分和控制部分。 光信号接收部分包括光电检测器。 光电检测器具有APD。 通过钝化膜,光电导体被放置在APD的表面的由APD的光信号接收区域保持未被占据的部分上。 当采用这种结构时,可以从光电导体获得用于控制APD的雪崩倍增因子的信号。 因此,可以以简单的结构获得信号。 此外,光电导体即使对于弱光也具有良好的输出电流线性。 结果,可以高精度地获得用于控制APD的雪崩倍增因子的输出电流I。
    • 104. 发明授权
    • Photodiode, optical receiver device including the same, and method of making the photodiode
    • 光电二极管,包括该光电二极管的光接收装置以及制造光电二极管的方法
    • US07057255B2
    • 2006-06-06
    • US10320194
    • 2002-12-16
    • Naoyuki YamabayashiYoshiki Kuhara
    • Naoyuki YamabayashiYoshiki Kuhara
    • H01L31/06
    • H01L31/02162G02B6/4202G02B6/4214
    • A photodiode (PD chip) includes a substrate, an absorption layer, a p-n junction in the absorption layer, a passivation film for protecting the end of the p-n junction, a p-electrode, and an n-electrode. The passivation film is covered with a protective layer composed of an insulative resin and having a thickness larger than that of the passivation film such that the passivation film of the PD chip fixed to the Si wafer and hence the p-n junction are not damaged or contaminated when an Si wafer including a number of horizontally and vertically arranged chip units, each having a V-groove for fixing an optical fiber, a marker, and a metallized pattern, is diced. Thus, a low-cost optical receiver module that does not generate dark current can be produced.
    • 光电二极管(PD芯片)包括衬底,吸收层,吸收层中的p-n结,用于保护p-n结的端部的钝化膜,p电极和n电极。 钝化膜被由绝缘树脂构成的保护层覆盖,其厚度大于钝化膜的厚度,使得固定在Si晶片上的PD芯片的钝化膜以及pn结不会被损坏或被污染 包括多个水平和垂直布置的芯片单元的Si晶片,每个芯片单元都具有用于固定光纤的V形槽,标记和金属化图案。 因此,可以产生不产生暗电流的低成本光接收器模块。
    • 106. 发明授权
    • Optical module and method of manufacturing the same
    • 光模块及其制造方法
    • US06948865B2
    • 2005-09-27
    • US10794386
    • 2004-03-05
    • Yoshiki Kuhara
    • Yoshiki Kuhara
    • G02B6/42G02B6/32G02B6/35
    • G02B6/4246G02B6/4204
    • An optical module for inputting and outputting light in a direction of a predetermined axis, and a method of manufacturing the optical module are provided. The optical module includes a stem having a mount and a principal surface crossing the predetermined axis. The mount has a first mounting surface, a second mounting surface, and an optical path. An optical filter is attached to the mount. A semiconductor light emitting device emitting light of a first wavelength is disposed on the first mounting surface and is optically coupled to the optical filter. A semiconductor light receiving device being responsive to light of a second wavelength is positioned on the second mounting surface in alignment with the optical path and is optically coupled to the optical filter through the optical path, thereby receiving the light of the second wavelength from the optical filter.
    • 提供了一种用于沿预定轴线的方向输入和输出光的光学模块,以及制造该光学模块的方法。 光学模块包括具有安装座和与预定轴线交叉的主表面的杆。 安装座具有第一安装表面,第二安装表面和光路。 滤光片安装在安装座上。 发射第一波长的光的半导体发光器件设置在第一安装表面上并且光耦合到滤光器。 响应于第二波长的光的半导体光接收装置被定位在与光路对准的第二安装表面上,并且通过光路光耦合到滤光器,从而从光学接收第二波长的光 过滤。