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101. 发明授权

US07345303B2 Organic thin-film transistors 失效
标题翻译：有机薄膜晶体管
公开(公告)号：US07345303B2
公开(公告)日：2008-03-18
申请号：US11315044
申请日：2005-12-22
申请人： Mihaela Maria Birau , Yiliang Wu , Beng S. Ong
发明人： Mihaela Maria Birau , Yiliang Wu , Beng S. Ong
IPC分类号： H01L51/00
CPC分类号： H01L51/10 , H01L51/0545 , H01L51/107
摘要： A novel barrier layer which protects electronic devices from adverse environmental effects such as exposure to light, especially white light, is described. The barrier layer comprises a copolymer having an acrylate unit and an acrylate unit with a pendant dye group. Also disclosed are processes for producing such electronic devices.
摘要翻译：描述了保护电子设备免受诸如曝光，特别是白光等不利环境影响的新颖的阻挡层。阻挡层包括具有丙烯酸酯单元和具有侧基染料基团的丙烯酸酯单元的共聚物。还公开了用于生产这种电子装置的方法。

102. 发明申请

US20080020572A1 Electrically conductive feature fabrication process 有权
标题翻译：导电特征制作工艺
公开(公告)号：US20080020572A1
公开(公告)日：2008-01-24
申请号：US11490391
申请日：2006-07-20
申请人： Yiliang Wu , Beng S. Ong
发明人： Yiliang Wu , Beng S. Ong
IPC分类号： H01L21/44
CPC分类号： H05K1/097 , C23C18/08 , H01L51/0021 , H01L51/0036 , H01L51/0541 , H01L51/0545 , H01L51/102
摘要： A process for fabricating an electrically conductive feature comprising: (a) liquid depositing a low viscosity composition comprising starting ingredients including an organic anine, a silver compound, and optionally an organic acid, to result in a deposited composition; and (b) heating the deposited composition, resulting in the electrically conductive feature comprising silver.
摘要翻译：一种用于制造导电特征的方法，包括：（a）液体沉积低粘度组合物，其包含起始成分，包括有机碱，银化合物和任选的有机酸，以产生沉积的组合物; 和（b）加热沉积的组合物，导致包含银的导电特征。

103. 发明授权

US07270694B2 Stabilized silver nanoparticles and their use 有权
标题翻译：稳定的银纳米颗粒及其用途
公开(公告)号：US07270694B2
公开(公告)日：2007-09-18
申请号：US10958937
申请日：2004-10-05
申请人： Yuning Li , Yiliang Wu , Beng S. Ong
发明人： Yuning Li , Yiliang Wu , Beng S. Ong
IPC分类号： B22F9/24
CPC分类号： B22F1/0018 , B22F1/0062 , B22F9/24 , B22F2998/00 , B82Y30/00 , H01B1/22 , H01L51/0021 , H01L51/105 , Y10S977/777 , Y10S977/786 , Y10S977/787 , Y10S977/81 , Y10S977/896 , Y10S977/932
摘要： A process comprising: reacting a silver compound with a reducing agent comprising a hydrazine compound in the presence of a thermally removable stabilizer in a reaction mixture comprising the silver compound, the reducing agent, the stabilizer, and an optional solvent, to form a plurality of silver-containing nanoparticles with molecules of the stabilizer on the surface of the silver-containing nanoparticles.
摘要翻译：一种方法，包括：在包含银化合物，还原剂，稳定剂和任选的溶剂的反应混合物中，在热可除去的稳定剂存在下，使银化合物与包含肼化合物的还原剂反应，形成多个含银纳米颗粒与含银纳米颗粒表面的稳定剂分子。

104. 发明授权

US07173140B2 Process to form compound with indolocarbazole moieties 有权
标题翻译：与吲哚并咔唑部分形成化合物的方法
公开(公告)号：US07173140B2
公开(公告)日：2007-02-06
申请号：US11011901
申请日：2004-12-14
申请人： Yuning Li , Yiliang Wu , Beng S. Ong
发明人： Yuning Li , Yiliang Wu , Beng S. Ong
IPC分类号： C07D209/48
CPC分类号： C08G61/124 , H01L51/0035 , H01L51/0072 , H01L51/0541 , H01L51/0545
摘要： A process composed of: reacting a reaction mixture comprised of one or more optionally substituted indolocarbazoles, a reaction medium, and a coupling agent at a reaction temperature to form a compound composed of a plurality of optionally substituted indolocarbazole moieties which are the same or different from each other.
摘要翻译：一种方法，其包括：在反应温度下使由一种或多种任选取代的吲哚并咔唑，反应介质和偶联剂组成的反应混合物反应，以形成由多个任选取代的吲哚咔唑部分组成的化合物，所述任选取代的吲哚咔唑部分相同或不同彼此。

105. 发明授权

US06803262B2 Process using self-organizable polymer 有权
标题翻译：使用自组织聚合物的方法
公开(公告)号：US06803262B2
公开(公告)日：2004-10-12
申请号：US10273901
申请日：2002-10-17
申请人： Yiliang Wu , Beng S. Ong
发明人： Yiliang Wu , Beng S. Ong
IPC分类号： H01L2100
CPC分类号： H01L51/0044 , H01L51/0012 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： A process including: creating a composition composed of a liquid and a self-organizable polymer at least partially dissolved in the liquid, resulting in dissolved polymer molecules; reducing the solubility of the dissolved polymer molecules to induce formation of structurally ordered polymer aggregates in the composition; depositing a layer of the composition including the structurally ordered polymer aggregates; and drying at least partially the layer to result in a structurally ordered layer, wherein the structurally ordered layer is part of an electronic device and the structurally ordered layer exhibits increased charge transport capability.
摘要翻译：一种方法包括：产生由液体和至少部分溶解在液体中的自组织聚合物组成的组合物，导致溶解的聚合物分子;降低溶解的聚合物分子的溶解度以诱导组合物中结构有序聚合物聚集体的形成 ;沉积包含结构有序聚合物聚集体的组合物层; 并且至少部分地干燥所述层以产生结构有序的层，其中所述结构有序层是电子器件的一部分，并且所述结构有序层表现出增加的电荷传输能力。

106. 发明授权

US06777529B2 Polythiophenes and devices thereof 有权
标题翻译：聚噻吩及其装置
公开(公告)号：US06777529B2
公开(公告)日：2004-08-17
申请号：US10042359
申请日：2002-01-11
申请人： Beng S. Ong , Lu Jiang , Yiliang Wu , Dasarao K. Murti
发明人： Beng S. Ong , Lu Jiang , Yiliang Wu , Dasarao K. Murti
IPC分类号： C08G7500
CPC分类号： C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： Polythiophenes of the formula wherein R and R′ are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z is 0 or 1, and wherein the sum of x and y is greater than zero; m represents the number of segments; and n represents the degree of polymerization.
摘要翻译：式中R和R'的聚噻吩是侧链; A是二价键; x和y表示未取代的噻吩基单元的数目; z是0或1，并且其中x和y之和大于零; m表示段数; n表示聚合度。

107. 发明授权

US06621099B2 Polythiophenes and devices thereof 有权
标题翻译：聚噻吩及其装置
公开(公告)号：US06621099B2
公开(公告)日：2003-09-16
申请号：US10042356
申请日：2002-01-11
申请人： Beng S. Ong , Lu Jiang , Yiliang Wu , Dasarao K. Murti
发明人： Beng S. Ong , Lu Jiang , Yiliang Wu , Dasarao K. Murti
IPC分类号： H01L5100
CPC分类号： C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a polythiophene of Formula (I) wherein R and R′ are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z is 0 or 1, and wherein the sum of x and y is greater than about zero; m represents the number of segments; and n represents the degree of polymerization.
摘要翻译：含有式（I）的聚噻吩的电子器件，其中R和R'是侧链; A是二价键; x和y表示未取代的噻吩基单元的数目; z为0或1，并且其中x和y的和大于约零; m表示段数; n表示聚合度。

108. 发明申请

US20120157689A1 SUBSTITUTED INDOLOCARBAZOLES 有权
标题翻译：取代的吲哚酚
公开(公告)号：US20120157689A1
公开(公告)日：2012-06-21
申请号：US13366857
申请日：2012-02-06
申请人： Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人： Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号： C07D487/04 , C07D487/14
CPC分类号： H01L51/0072 , H01L51/0067 , H01L51/0541
摘要： A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译：包含至少一个任选取代的噻吩基的取代的吲哚咔唑。

109. 发明授权

US07923718B2 Organic thin film transistor with dual layer electrodes 有权
标题翻译：具有双层电极的有机薄膜晶体管
公开(公告)号：US07923718B2
公开(公告)日：2011-04-12
申请号：US11564438
申请日：2006-11-29
申请人： Yiliang Wu , Beng S. Ong
发明人： Yiliang Wu , Beng S. Ong
IPC分类号： H01L29/08
CPC分类号： H01L51/105 , H01L51/0037 , H01L51/0525 , H01L51/0541 , H01L51/0545
摘要： A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.
摘要翻译：提供了具有双层源极和漏极的薄膜晶体管（TFT）。每个源极和漏极包括第一层和第二层。第一层具有与半导体的能级不同至少0.5eV的功函数，第二层具有与半导体的能级匹配的功函数。半导体具有短的沟道长度。

110. 发明授权

US07754510B2 Phase-separated dielectric structure fabrication process 有权
标题翻译：相分离电介质结构制造工艺
公开(公告)号：US07754510B2
公开(公告)日：2010-07-13
申请号：US11695131
申请日：2007-04-02
申请人： Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
发明人： Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
IPC分类号： H01L21/00
CPC分类号： H01L51/052 , H01L51/0003 , H01L51/0036 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.
摘要翻译：一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

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